TDA8170 TV VERTICAL DEFLECTION OUTPUT CIRCUIT .. .. The functions incorporated are : POWER AMPLIFIER FLYBACK GENERATOR REFERENCE VOLTAGE THERMAL PROTECTION DESCRIPTION The TDA8170 is a monolithic integrated circuit in HEPTAWATTTM package. It is a high efficiency power booster for direct driving of vertical windings of TV yokes. It is intended for use in Colour and B & W television receivers as well as in monitors and displays. HEPTAWATT (Plastic Package) ORDER CODE : TDA8170 PIN CONNECTIONS 8170-01.EPS REFERENCE VOLTAGE AND NON-INVERTING INPUT OUTPUT STAGE SUPPLY OUTPUT GROUND FLYBACK GENERATOR SUPPLY VOLTAGE INVERTING INPUT 7 6 5 4 3 2 1 Tab connected to Pin 4 BLOCK DIAGRAM + VS 2 6 3 FLYBACK GENERATOR RE FERENCE VOLTAGE 1 PO WER AMPLIFIER THERMAL P ROTECTION YOKE 5 7 TDA8170 8170-02.EPS 4 December 1997 1/7 TDA8170 SCHEMATIC DIAGRAM 5 2 D4 6 Q11 C1 Q10 7 D3 Q7 D5 R4 R10 Q12 R5 D8 1 Q1 Q2 Q20 Q6 D6 Q4 Q8 D7 Q9 D9 Q21 Q13 D1 3 R6 Q14 Q5 R11 Q18 Q15 Q3 Q17 Q22 Q16 Q19 R1 D2 R2 R3 R7 R8 R9 C2 R12 Q23 Q26 Q24 Z1 Z2 Q25 R13 R14 Q27 Q28 Q29 R16 4 R19 2/7 R17 R18 8170-03.EPS R15 TDA8170 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VS Supply Voltage (pin 2) 35 V V5, V6 Flyback Peak Voltage 60 V V3 V1, V7 Voltage at Pin 3 + Vs Amplifier Input Voltage + Vs, – 0.5 V 2.5 A A Output Peak Current (non repetitive, t = 2 msec) Io Output Peak Current at f = 50 or 60 Hz, t ≤ 10 µsec 3 Io Output Peak Current at f = 50 or 60 Hz, t > 10 µsec 2 A I3 Pin 3 DC Current at V5 < V2 100 mA I3 Pin 3 Peak to Peak Flyback Current at f= 50 or 60 Hz, tfly ≤1.5msec 3 A Total Power Dissipation at Tcase = 90 °C 20 W – 40, +150 °C Value Unit 3 °C/W Ptot Tstg, Tj Storage and Junction Temperature 8170-01.TBL Io Symbol R th j–case Parameter Thermal Resistance Junction-case Max. 8170-02.TBL THERMAL DATA ELECTRICAL CHARACTERISTICS (refer to the test circuits, VS = 35V, Tamb = 25oC unless otherwise specified) Parameter Test Conditions Min. Typ. Max. Unit Fig. I2 Pin 2 Quiescent Current I3 = 0, I5 = 0 8 16 mA 1a I6 Pin 6 Quiescent Current I3 = 0, I5 = 0 16 36 mA 1a I1 Amplifier Input Bias Current V1 = 1 V – 0.1 –1 µA 1a V7 Reference Voltage V 1a mV/V 1a 2.2 ∆V7 ∆VS Reference Voltage Drift versus Supply Voltage Vs = 15 to 30 V V3L Pin 3 Saturation Voltage to GND I3 = 20 mA 1 V 1c V5 Quiescent Output Voltage Vs = 35 V , R a = 39 kΩ 18 V 1d Vs = 15 V , R a = 13 kΩ 7.5 V 1d V5L V5H Tj Output Saturation Voltage to GND Output Saturation Voltage to Supply Junction Temperature for Thermal Shut Down 1 2 I5 = 1.2 A 1 1.4 V 1c I5 = 0.7 A 0.7 1 V 1c – I5 = 1.2 A 1.6 2.2 V 1b – I5 = 0.7 A 1.3 1.8 V 1b 140 °C 3/7 8170-03.TBL Symbol TDA8170 Figure 1a : Measurement of I1, I2, I6, V7, ∆V7/∆VS Figure 1b : Measurement of V5H +VS I2 +VS I6 2 2 6 6 V5H 5 10kΩ TDA8170 S1 TDA8170 1 5 1V a 1 7 b 4 4 -I5 8170-04.EPS V7 8170-05.EPS I1 1V S1 : (a) I2 and I6 ; (b) I1 Figure 1c : Measurement of V3L, V5L Figure 1d : Measurement of V5 +VS +VS 2 I3 or I5 2 6 S1 6 12kΩ 3 TDA8170 1 a b 5 2V TDA8170 1 V5 4 3V Ra 5 4 S1 : (a) V3L ; (b) V5L Figure 2 : 5.6kΩ 8170-07.EPS V5L 8170-06.EPS V3L Application Schematic 1N4001 VS C1 0.1µF C2 470µF C3 220µF D1 2 6 tfly 3 C7 1µF V7 7 GND Iy TDA8170 Vi 5 R1 10kΩ to 4.7kΩ R3 12kΩ R2 5.6kΩ Ly 24.6mH R6 330Ω R7 1.5Ω 4 RT1 IN to C4 0.22µF 1 Ry 9.6Ω R4 C6 4.7µF 8.2kΩ C5 2200µF R5 1Ω 4/7 to 8170-08.EPS R5 Iy TDA8170 Figure 3 : PC Board and Component layout of the Circuit of fig. 2(1 : 1 scale) TDA8170 C1 C3 D1 C5 C2 R1 R7 R3 R4 R6 R2 GND C6 R11 VS YOKE YOKE GND ( VO ) V7 8170-09.EPS R5 IN Component 110 ° TVC 5.9 Ω/10 mH 1.95 App 110 ° TVC 9.6 Ω/24.6 mH 1.2 App 90 ° TVC 15 Ω/30 mH 0.82 App Unit RT1 10 4.7 10 kΩ R1 12 10 12 kΩ R2 10 5.6 5.6 kΩ R3 27 12 18 kΩ R4 12 8.2 5.6 kΩ R5 0.82 1 1 Ω R6 270 330 330 Ω R7 1.5 1.5 1.5 Ω D1 1N 4001 1N 4001 1N 4001 – C1 0.1 0.1 0.1 µF C2 eI. 1000/25 V 470/25 V 470/25 V µF C3 eI. 220/25 V 220/25 V 220/25 V µF C4 0.22 0.22 0.22 µF C5 eI. 200/25 V 2200/25 V 1000/16 V µF C6 eI. 4.7/16 V 4.7/16 V 10/16 V µF C7 1.0/16V 1.0/16V 1.0/16V µF 8170-04.TBL COMPONENTS LIST FOR TYPICAL APPLICATIONS 5/7 TDA8170 TYPICAL PERFORMANCES 110 ° TVC 5.9 Ω/10 mH 110 ° TVC 9.6 Ω/27 mH Vs - Supply Voltage 24 22.5 25 V Is - Current 280 175 125 mA tfly - Flyback Time 0.6 1 0.7 ms Ptot - Power Dissip. 4.2 2.5 2.05 W 7 13 16 °C/W R th o-a - Heatsink 90 ° TVC 15 Ω/30 mH Unit Tamb 60 60 60 °C Tj max 110 110 110 °C To 20 20 20 ms VI 2.5 2.5 2.5 Vpp V7 2.5 2.5 2.5 Vp 8170-05.TBL Parameter MOUNTING INSTRUCTIONS The power dissipated in the circuit must be removed by adding an external heatsink. Thanks to the HEPTAWATTTM package attaching the heatsink is very simple, a screw a compression spring (clip) being sufficient. Between the heatsink and the packageit isbetter to insert a layerof silicon grease, to optimize the thermal contact ; no electrical isolation is needed between the two surfaces. 8170-10.EPS Figure 4 : Mounting Examples 6/7 TDA8170 PM-HEPTV.EPS PACKAGE MECHANICAL DATA : 7 PINS - PLASTIC HEPTAWATT A C D D1 E F F1 G G1 G2 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia. Min. Millimeters Typ. 2.4 1.2 0.35 0.6 2.41 4.91 7.49 2.54 5.08 7.62 10.05 Max. 4.8 1.37 2.8 1.35 0.55 08 0.9 2.67 5.21 7.8 10.4 10.4 Min. 0.094 0.047 0.014 0.024 0.095 0.193 0.295 Max. 0.189 0.054 0.110 0.053 0.022 0.031 0.035 0.105 0.205 0.307 0.409 0.409 0.668 0.587 0.848 0.891 3 15.8 6.6 0.102 0.594 0.236 2.8 5.08 3.65 0.100 0.200 0.300 0.396 16.97 14.92 21.54 22.62 2.6 15.1 6 Inches Typ. 0.118 0.622 0.260 0.110 0.200 3.85 0.144 HEPTV.TBL Dimensions 0.152 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This pu blication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1997 SGS-THOMSON Microelectronics - All Rights Reserved Purchase of I2C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips 2 2 I C Patent. Rights to use these components in a I C system, is granted provided that the system conforms to the I2C Standard Specifications as defined by Philips. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7