TDA8178S TV VERTICAL DEFLECTION BOOSTER .. .. POWER AMPLIFIER FLYBACK GENERATOR THERMAL PROTECTION REFERENCE VOLTAGE DESCRIPTION Designed for monitors and high performance TVs, the TDA8178S vertical deflection booster delivers flyback voltages up to 90V. The TDA8178S operates with supplies up to 42V and provides up to 2App output current to drive to yoke. The TDA8178Sis offered in HEPTAWATT package HEPTAWATT (Plastic Package) ORDER CODE : TDA8178S PIN CONNECTIONS 7 6 5 4 3 2 1 Reference Voltage Output Stage Supply Output GND Flyback Generator Supply Voltage Inverting Input 8178S-01.EPS Tab connected to pin 4 May 1993 1/6 TDA8178S BLOCK DIAGRAM + VS 2 6 3 FLYBACK GENERATOR 1 POWER AMPLIFIER 5 7 YOKE REFERENCE VOLTAGE THERMAL PROTECTION 8178S-02.EPS 4 APPLICATION CIRCUIT (VS = 42V) + VS 2 1 6 TDA8178S 3 5 7 YOKE 8178S-03.EPS 4 Note : For values see ”Easy Design of Vertical Deflection Stages” (software available from our sales offices) 2/6 TDA8178S ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VS Supply Voltage (pin 2) 50 V V5 , V6 Flyback Peak Voltage 100 V V1 , V7 Amplifier Input Voltage + VS Output Peak Current A Non-repetitive, t = 2ms f = 50 or 60Hz, t ≤ 10µs f = 50 or 60Hz, t > 10µs I3 100 1.8 Pin 3 DC at V5 < V2 Pin 3 Peak Flyback Current at f = 50 or 60Hz, tfly ≤ 1.5ms o Ptot Total Power Dissipation at TC = 70 C Tstg Storage Temperature Tj 2 2 1.8 mA A 20 Junction Temperature W - 40, + 150 o C 0, +150 o C 8178S-01.TBL IO Symbol Rth (j-c) Parameter Value Junction-case Thermal Resistance Max. Unit o 3 C/W 8178S-02.TBL THERMAL DATA ELECTRICAL CHARACTERISTICS (VS = 42V, TA = 25oC, unless otherwise specified) (refer to the test circuits - see Figure 1 next page) Parameter Test Conditions Max. Unit 42 V 10 20 mA 20 40 mA V1 = 1V - 0.2 -1 µA I3 = 20mA 1.3 1.8 V 24.2 17.8 25 18.5 VS Operating Supply Voltage Range I2 Pin 2 Quiescent Current I3 = 0 I5 = 0 I6 Pin 6 Quiescent Current I3 = 0 I5 = 0 I1 Amplifier Bias Current V3L Pin 3 Saturation to GND V5 Quiescent Output Voltage Min. Typ. 10 V VS = 42V VS = 35V Ra = 3.9kΩ Ra = 5.6kΩ 23.4 17 V5L Output Saturation Voltage to GND I5 = 1A 1.2 1.5 V V5H Output Saturation Voltage to Supply - I5 = 1A 2.2 2.6 V VD5 - 6 Diode Forward Voltage between Pins 5-6 ID = 1A 1.5 3 V VD3 - 2 Diode Forward Voltage between Pins 3-2 ID = 1A 1.5 3 V 2.2 2.3 V V7 Internal Reference 2.1 ∆V7/∆VS Reference Voltage Drift versus VS VS = 24 to 42V KT Reference Voltage Drift versus Tj Tj = 0 to 125 C 6 ∆V7 ⋅ 10 KT = ∆Tj ⋅ V7 R1 Input Resistance 200 kΩ Tj Junction Temperature for Thermal Shutdown 140 o o 2 4 mV/V 100 150 ppm/ C o 8178S-03.TBL Symbol C 3/6 TDA8178S FIGURE 1 : DC Test Circuits Figure 1a : Measurement of I1, I2, I6, V7, ∆V7/∆VS Figure 1b : Measurement of V5H + VS I2 + VS I6 2 V5H 6 2 6 5 10k Ω TDA8178S TDA8178S 1 S1 5 a 1 b 7 4 - I5 4 I1 V7 1V 8178S-04.EPS 8178S-05.EPS 1V S1 : (a) I2 and I6, (b) I1 Figure 1c : Measurement of V3L, V5L Figure 1d : Measurement of V5 + VS + VS I 3 or I 2 2 6 6 S1 a 3 1 5 b 1 TDA8178S TDA8178S 5 5 4 V5 4 39k Ω V 3L V 5L 3V 4/6 8178S-07.EPS S1 : (a)V3L, (b) V5L 8178S-06.EPS Re TDA8178S Figure 2 : SOA of Each Output Power Transistor at TA = 25oC 10 I C (A) Pulse Operation* I C max. pulsed 2 1.2 1 I C max. continued 1ms 10ms DC Operation -1 10 VCE (V) 8178S-08.EPS * For single non repetitive pulse -2 10 1 10 2 10 5/6 TDA8178S PACKAGE MECHANICAL DATA : HEPTAWATT E L D1 C D M A M1 L1 L2 G2 H3 G1 L3 G L5 F PM-HEPTV.EPS L7 H2 F1 Dia. L6 Min. A C D D1 E F F1 G G1 G2 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia. Millimeters Typ. 2.4 1.2 0.35 0.6 2.41 4.91 7.49 2.54 5.08 7.62 10.05 Max. 4.8 1.37 2.8 1.35 0.55 08 0.9 2.67 5.21 7.8 10.4 10.4 Min. 0.094 0.047 0.014 0.024 0.095 0.193 0.295 Max. 0.189 0.054 0.110 0.053 0.022 0.031 0.035 0.105 0.205 0.307 0.409 0.409 0.668 0.587 0.848 0.891 3 15.8 6.6 0.102 0.594 0.236 2.8 5.08 3.65 0.100 0.200 0.300 0.396 16.97 14.92 21.54 22.62 2.6 15.1 6 Inches Typ. 0.118 0.622 0.260 0.110 0.200 3.85 0.144 0.152 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved 2 Purchase of I C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips I2C Patent. Rights to use these components in a I2C system, is granted provided that the system conforms to the I2C Standard Specifications as defined by Philips. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 6/6 HEPTV.TBL Dimensions