TDE3237 INTELLIGENT POWER SWITCH ADVANCE DATA HIGH OUTPUT CURRENT ADJUSTABLE SHORT-CIRCUIT PROTECTION INTERNAL THERMAL PROTECTION WITH HYSTERESIS TO AVOID THE INTERMEDIATE OUTPUT LEVELS LARGE SUPPLY VOLTAGE RANGE: 8 TO 30V Minidip DESCRIPTION The TDE3237 is a monolithic amplifier designed for high-current and high-voltage applications, specIally to drive lamps, relays and stepping motors. The device is essentially blow-out proof. Current limiting is available to limit the peak output current to a safe value, the adjustment only requires one external resistor. In addition, thermal shut down is provided to keep the IC from overheating. If external dissipation becomes too great, the driver will SO14 ORDERING NUMBERS: TDE3237DP TDE3237FP shut down to prevent excessive heating. The output is also protected from short-circuits with the positive power supply. The device operates over a wide range of supply voltages from standard ±15V operational amplifier supplies down to the single 12V or 24V used for industrial electronic systems. PIN CONNECTIONS Minidip SO14 November 1991 1/7 This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice. T is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without TDE3237 ABSOLUTE MAXIMUM RATINGS Symbol Value Unit VCC Supply Voltage Parameter 36 V VID Differantial Input Voltage 36 V VI Input Voltage 36 V IO Output Current 500 mA Ptot Power Dissipation Internally Limited W Tstg Storage Temperature Range – 65 to + 150 °C Toper Operating Free-air Temperature Range – 25 to + 85 °C THERMAL CHARACTERISTICS Symbol Parameter Unit R th(j-c) Maximum Junction-case Thermal Resistance (note 1) Minidip 50 °C/W R th(j-a) Maximum Junction-ambient Thermal Resistance (note 1) Minidip 120 °C/W Junction-ceramic Substrate (case glued to substrate) SO14 90 °C/W SO14 65 °C/W Junction-ceramic Substrate (case glued to substrate, substrate temperature maintened constant) Note : 2 1. Devices bonded on 40 cm glass-epoxy printed circuit 0.15cm thick with 4cm of copper SCHEMATIC DIAGRAM 2/7 Value TDE3237 ELECTRICAL CHARACTERISTICS Tamb = – 25 to +85 °C, VCC = 8 to ≤30 V, unless otherwise specified (note 1). Symbol Parameter Min. Typ. Max. Unit VIO Input Offset Voltage - (note 3) – 2 50 mV IIB Input Bias Current – 0.1 1.5 µA ICC Supply Current (VCC = + 24 V, IO = 0) – 3 5 mA VCM Common-mode Input Voltage Range 2 – VCC–2 V ISC Short-circuit Current Limit (Tcase = + 25 °C, RSC = 3.3 Ω ) – 230 – -mA Output Saturation Voltage (output high) (RSC = 0, VI+–VI– ≥ 50 mV, IO = 150 mA – 1 1.5 V Low Level Output Current (VO = VCC = + 24 V Tamb = + 25 °C) – – 100 µA VCC–V O IOL Notes : 2) For operating at high temperature, the TDE3237, must be derated based on a + 150 C maximum junction temperature and a junction-ambient thermal as showed in the thermal characteristics data base. 3) The offset voltage given is the maximum value of input voltage required to drive the output voltage within 2 V of the ground or the supply voltage. SIMPLIFIED SCHEMATIC 3/7 TDE3237 4/7 TDE3237 SO14 PACKAGE MECHANICAL DATA mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 1.75 0.1 0.069 0.25 a2 MAX. 0.004 0.009 1.6 0.063 b 0.35 0.46 0.014 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.020 c1 45 (typ.) D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 F 3.8 4.0 0.15 0.157 L 0.4 1.27 0.016 0.050 M S 0.68 0.027 8 (max.) 5/7 TDE3237 MINIDIP PACKAGE MECHANICAL DATA mm DIM. MIN. A TYP. MAX. MIN. 3.32 TYP. MAX. 0.131 a1 0.51 0.020 B 1.15 1.65 0.045 0.065 b 0.356 0.55 0.014 0.022 b1 0.204 0.304 0.008 0.012 D E 10.92 7.95 9.75 0.430 0.313 0.384 e 2.54 0.100 e3 7.62 0.300 e4 7.62 0.300 F 6.6 0.260 I 5.08 0.200 L Z 6/7 inch 3.18 3.81 1.52 0.125 0.150 0.060 TDE3237 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. 7/7