THBT200S1 TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION Application Specific Discretes A.S.D. FEATURES DUAL BIDIRECTIONAL CROWBAR PROTECTION. PEAK PULSE CURRENT : - IPP = 35 A, 10/1000 µs. HOLDING CURRENT = 150 mA min BREAKDOWN VOLTAGE = 200 V min. BREAKOVER VOLTAGE = 290 V max. MONOLITHIC DEVICE. DESCRIPTION This monolithic protection device has been especially designed to protect subscriber line cards.The THBT200S device is particularly suitable to protect ring generator relay against transient overvoltages. COMPLIESWITHTHE FOLLOWINGSTANDARDS: CCITT K20 : VDE 0433 : VDE 0878 : FCC part 68 : BELLCORE TR-NWT-001089 : 10/700 µs 5/310 µs 10/700 µs 5/310 µs 1.2/50 µs 1/20 µs 2/10 µs 2/20µs 1kV 25A 2kV 45A (*) 1.5kV 40A 2.5kV 80A (*) 2/10 µs 2/10µs 10/1000µs 10/1000µs 2.5kV 80A 1kV 35A (*) (*) with series resistors or PTC. SIP3 SCHEMATIC DIAGRAM N C 1 T ip 2 G N D 3 R in g 4 TM: ASD is trademarks of SGS-THOMSON Microelectronics. February 1998 Ed: 2 1/7 THBT200S1 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C) Symbol Parameter Value Unit 10/1000 µs 8/20 µs 2/10 µs 35 70 80 A tp = 20ms 20 A - 40 to + 150 + 150 °C 230 °C IPP Peak pulse current (see note 1) ITSM Non repetitive surge peak on-state current Tstg Tj Storage and operating junction temperature range Maximum junction temperature TL Maximum lead temperature for soldering during 10s Note 1 : Pulse waveform : 10/1000µs tr=10µs 5/310µs tr=5µs 2/10µs tr=2µs % I PP tp=1000µs tp=310µs tp=10µs 100 50 0 tr t tp THERMAL RESISTANCE Symbol Rth (j-a) Parameter Junction to ambient 2/7 Value Unit 80 °C/W THBT200S1 ELECTRICAL CHARACTERISTICS (Tamb=25°C) Symbol I Parameter Ipp VRM Stand-offvoltage IRM Leakage current at VRM VBR Continuous reverse voltage IBO IH VBO Breakover voltage IRM V VRM IH Holding current IBO Breakover current IPP Peak pulse current C Capacitance VBR VBO 1 - PARAMETERS RELATED TO ONE TRISIL. (Between TIP and GND or RING and GND) IRM @ VRM VBR @ IR max. VBO min. max. @ IBO min. max. note 1 IH C min. max. note 2 note 3 µA V V mA V mA mA mA pF 10 180 200 1 290 150 800 150 200 Note 1 : Note 2 : Note 3 : See reference test circuit 1 for IH, IBO and VBO parameters. See test circuit 2. VR = 1V, F = 1MHz. 2 - PARAMETERS RELATED TO TIP and RING TRISIL. IRM @ VRM C max. max. µA V pF 10 180 200 3/7 THBT200S1 REFERENCE TEST CIRCUIT 1 FOR IBO and VBO parameters : t TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - V OUT = 250 VRMS, R1 = 140 Ω. - Device with VBO ≥ 200 Volt - VOUT = 480 V RMS, R2 = 240 Ω. FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT 2. R D.U.T. - VP VBAT = - 48 V Surge generator This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs. 3) The D.U.T will come back off-state within 50 ms max. 4/7 THBT200S1 APPLICATION CIRCUIT Typical line card protection concept RING GENERATOR -V bat PTC LINE A TIP T E S T LINE B RING RELAY R E L A Y S SLIC RING THBT200S1 THDTxxx or LCPxxx PTC FUNCTIONAL DESCRIPTION Line A TIP LINE A AND LINE B PROTECTION. Each line (TIP and RING) is protected by a bidirectional Trisil, which triggers at a maximum voltage equal to the VBO. The differential mode is also assured at VBO. LineB Ring 5/7 THBT200S1 Fig. 1 : Relative variation of holding current versus junction temperature. Fig. 2 : Surge peak current versus overload duration. IH [ Tj ] 1.0 ITSM(A) 30 IH [ Tj = 25°C ] F=50Hz Tj initial=25°C 25 0.8 20 0.6 15 0.4 10 5 0.2 t(s) Tj (°C) 0.0 0 20 40 60 80 100 120 140 Fig. 3 : Peak on state voltage versus peak on state current (typical values). 0 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 Fig. 4 : Capacitance versus reverse applied voltage (typical values). 1000 100 10 1 6/7 10 100 200 THBT200S1 ORDER CODE THBT 200 S 1 35A VERSION BIDIRECTIONAL TRISIL Package : S = SIP3 BREAKDOWN VOLTAGE MARKING : Package Types Marking SIP3 THBT200S1 TBT200S1 PACKAGE MECHANICAL DATA SIP3 Plastic REF. DIMENSIONS Millimetres B Min. Typ. Max. Min. A A I b1 b2 Z c1 e e3 2.80 0.110 a2 1.50 1.90 0.059 0.075 10.15 0.400 0.50 0.020 b2 1.35 1.75 0.053 0.069 c1 0.38 0.50 0.015 0.020 e 2.54 0.100 e3 7.62 0.200 I L Packaging: Productssupplied in antistatic tubes. Weight : 0.55g 0.280 a1 b1 L Typ. Max. 7.10 B a1 a2 Inches Z 10.50 3.30 0.413 0.130 1.50 0.059 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7