STMICROELECTRONICS TIP112

TIP110/112
TIP115/117

COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■
■
■
■
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
MONOLITHIC DARLINGTON
CONFIGURATION
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
1
2
3
TO-220
DESCRIPTION
The
TIP110
and
TIP112 are
silicon
Epitaxial-Base NPN transistors in monolithic
Darlington configuration mounted in Jedec
TO-220 plastic package. They are intented for
use in medium power linear and switching
applications.
The complementary PNP types are TIP115 and
TIP117.
INTERNAL SCHEMATIC DIAGRAM
R 1 T yp.= 7K Ω
R 2 T yp.= 230
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
NPN
TIP110
TIP112
PNP
TIP115
TIP117
V CBO
Collector-Base Voltage (IE = 0)
60
100
V
V CEO
Collector-Emitter Voltage (IB = 0)
60
100
V
V EBO
Emitter-Base Voltage (IC = 0)
IC
I CM
IB
P t ot
T stg
Tj
5
V
Collector Current
2
A
Collector Peak Current
4
A
50
mA
50
2
W
W
Base Current
Total Dissipation at Tcas e ≤ 25 C
o
T amb ≤ 25 C
Storage T emperature
o
Max. O perating Junction Temperature
-65 to 150
o
C
150
o
C
* For PNP types voltage and current values are negative
June 1999
1/6
TIP110/TIP112/TIP115/TIP117
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
2.5
62.5
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Max.
Un it
I CEO
Collector Cut-off
Current (I B = 0)
Parameter
V CE = Half Rated V CEO
2
mA
I CBO
Collector Cut-off
Current (I E = 0)
V CB = Rated V CBO
1
mA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
2
mA
V CEO(sus )∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
V CE(sat )∗
Test Cond ition s
I C = 30 mA
for TIP110/115
for TIP112/117
IC = 2 A
IB = 8 mA
V BE ∗
Base-Emitt er Voltage
IC = 2 A
V CE = 4 V
h F E∗
DC Current Gain
IC = 1 A
IC = 2 A
V CE = 4 V
V CE = 4 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
2/6
Typ .
60
100
Collector-Emitter
Saturation Voltage
Safe Operating Areas
Min.
Derating Curve
1000
500
V
V
2.5
V
2.8
V
TIP110/TIP112/TIP115/TIP117
DC Current Gain (NPN type)
DC Current Gain (PNP type)
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (NPN type)
Base-Emitter Saturation Voltage (PNP type)
3/6
TIP110/TIP112/TIP115/TIP117
Base-Emitter On Voltage (NPN type)
Base-Emitter On Voltage (PNP type)
Freewheel Diode Forward Voltage (NPN types)
Freewheel Diode Forward Voltage (PNP types)
4/6
TIP110/TIP112/TIP115/TIP117
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
MAX.
MIN.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
TYP.
inch
1.27
TYP.
MAX.
0.107
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
L2
16.4
0.409
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
5/6
TIP110/TIP112/TIP115/TIP117
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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