TIP142T TIP147T ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAIN 3 APPLICATIONS ■ GENERAL PURPOSE SWITCHING 1 2 TO-220 DESCRIPTION The TIP142T is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is TIP147T. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN TIP142T PNP TIP147T Unit V CBO Collector-Base Voltage (I E = 0) 100 V V CEO Collector-Emitter Voltage (I B = 0) 100 V V EBO Emitter-Base Voltage (I C = 0) IC I CM IB P tot T stg Tj 5 V Collector Current 15 A Collector Peak Current (t p < 5ms) 20 A Base Current 0.5 A Total Dissipation at T case ≤ 25 o C Storage Temperature 90 W Max. Operating Junction Temperature - 65 to 150 o C 150 o C For PNP types voltage and current values are negative. March 2000 1/4 TIP142T / TIP147T THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.38 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO Collector Cut-off Current (I E = 0) V CB = 100 V 1 mA I CEO Collector Cut-off Current (I B = 0) V CE = 50 V 2 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 2 mA VCEO(sus) * Collector-Emitter Sustaining Voltage (I B = 0) I C = 30 mA 100 V V CE(sat) * Collector-Emitter Saturation Voltage IC = 5 A I C = 10 A I B = 10 mA I B = 40 mA 2 3 V V V BE(on) * Base-Emitter Voltage I C =10 A V CE = 4 V 3 V DC Current Gain IC = 5 A I C = 10 A V CE = 4 V V CE = 4 V I C = 10 A I B2 = -40 mA I B1 = 10 mA RL = 3 Ω h FE * t on t off RESISTIVE LOAD Turn-on Time Turn-off Time For PNP types voltage and current values are negative. ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2/4 1000 500 0.9 4 µs µs TIP142T / TIP147T TO-220 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 1.27 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 L2 L4 16.4 13.0 0.645 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 3/4 TIP142T / TIP147T Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4