TLC116 ---> TLC386 T/D/S/A SENSITIVE GATE TRIACS .. FEATURES VERY LOW IGT = 5mA max LOW IH = 15mA max DESCRIPTION The TLC116 ---> TLC386 T/D/S/A triac family uses a high performance glass passivated PNPN technology. These parts are suitable for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static A1 A2 G TL (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) Parameter RMS on-state current (360° conduction angle) I2 t dI/dt Tstg Tj Tl Non repetitive surge peak on-state current ( Tj initial = 25°C ) 3 A 1.3 (1) tp = 8.3 ms 31.5 tp = 10 ms 30 I2t value tp = 10 ms 4.5 A2 s Critical rate of rise of on-state current Gate supply : IG = 50mA diG/dt = 0.1A/µs Repetitive F = 50 Hz 10 A/µs Non Repetitive 50 Storage and operating junction temperature range Parameter Repetitive peak off-state voltage Tj = 110°C A - 40 to + 150 - 40 to + 110 °C °C 230 °C Maximum lead temperature for soldering during 4 s at 4.5 mm from case Symbol VDRM VRRM Unit Tl = 40°C Ta = 25°C ITSM Value TLC Unit 116 T/D/S/A 226 T/D/S/A 336 T/D/S/A 386 T/D/S/A 200 400 600 700 V 2 (1) With Cu surface 1cm . February 1999 Ed: 1A 1/5 TLC116 T/D/S/A ---> TLC386 T/D/S/A THERMAL RESISTANCES Symbol Value Unit 50 °C/W Rth (j-l) DC Junction leads for DC 20 °C/W Rth (j-l) AC 15 °C/W Rth (j-a) Parameter Junction to ambient on printed circuit with Cu surface 1cm2 Junction leads for 360° conduction angle ( F= 50 Hz) GATE CHARACTERISTICS (maximum values) PG (AV) = 0.1W PGM = 2W (tp = 20 µs) IGM = 1A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) RL=33Ω (DC) RL=33Ω Quadrant Tj=25°C Suffix T D S A I-II-III MAX 5 5 10 10 IV MAX 5 10 10 25 mA Tj=25°C I-II-III-IV MAX 1.5 V VGT VD=12V VGD VD=VDRM RL =3.3kΩ Tj=110°C I-II-III-IV MIN 0.2 V tgt VD=VDRM IG = 40mA dIG/dt = 0.5A/µs Tj=25°C I-II-III-IV TYP 2 µs IL IG= 1.2 IGT Tj=25°C I-III-IV MAX II IH * 15 15 25 25 15 15 25 25 15 15 25 25 mA IT= 100mA gate open Tj=25°C MAX VTM * ITM= 4A tp= 380µs Tj=25°C MAX 1.85 V IDRM IRRM VDRM VRRM Tj=25°C MAX 0.01 mA Tj=110°C MAX 0.75 Tj=110°C TYP 10 10 20 20 V/µs Tj=110°C TYP 1 1 5 5 V/µs dV/dt * (dV/dt)c * Rated Rated Linear slope VD=67%VDRM gate open (dI/dt)c = 1.3A/ms up to * For either polarity of electrode A 2 voltage with reference to electrode A1. 2/5 Unit mA TLC116 T/D/S/A ---> TLC386 T/D/S/A ORDERING INFORMATION Package TLC ..6 IT(RMS) VDRM / VRRM Sensitivity Specification A V T D S A 3 200 X X X X 400 X X X X 600 X X X X 700 X X X X Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tlead). Fig.3 : RMS on-state current versus case temperature. Fig.4 : Thermal transient impedance junction to case and junction to ambient versus pulse duration. 3/5 TLC116 T/D/S/A ---> TLC386 T/D/S/A Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Fig.6 : Non Repetitive surge peak on-state current versus number of cycles. Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2 t. Fig.8 : On-state characteristics (maximum values). 4/5 TLC116 T/D/S/A ---> TLC386 T/D/S/A PACKAGE MECHANICAL DATA TL Plastic REF. D B G C Max. Min. Max. A 9.55 10.05 0.375 0.396 B 7.55 8.05 0.297 0.317 C 12.70 D 4.25 4.75 0.167 0.187 E 1.25 1.75 0.049 0.069 F 6.75 7.25 0.266 G I H H Inches Min. E F DIMENSIONS Millimeters A 0.500 4.50 0.285 0.177 H 2.04 3.04 0.80 0.120 I 0.75 0.85 0.029 0.033 Marking : type number Weight : 0.75 g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 5/5