STMICROELECTRONICS TN1215-600B-TR

TN1215-600B
®
STANDARD SCR
FEATURES
ITRMS = 12 A
VDRM / VRRM = 600 V
IGT < 15 mA
ITSM = 110 A
A
DESCRIPTION
A
The TN1215-600B SCR uses a high performance
TOPGLASS PNPN technology.
This part is intended for general purpose
applications using surface mount technology and
requiring high surge capability (power tools,
crowbar protection, voltage regulation, etc...).
G
K
DPAK
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
600
V
IT(RMS)
RMS on-state current
(180° conduction angle)
Tc= 105°C
12
A
IT(AV)
Average on-state current
(180° conduction angle)
Tc= 105°C
8
A
ITSM
Non repetitive surge peak on-state current
(Tj initial = 25°C)
tp = 8.3 ms
115
A
tp = 10 ms
110
tp = 10ms
60
A2s
I2t
I2t Value for fusing
dI/dt
Critical rate of rise of on-state current
dIG /dt = 1 A/µs.
IG = 20 mA
50
A/µs
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
260
°C
T
Maximum temperature for soldering during 10s
september 1998 - Ed: 1A
1/5
TN1215-600B
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient (S=0.5cm2)
70
°C/W
Rth(j-c)
Junction to case for D.C
1.5
°C/W
Type
Value
Unit
MIN
2
mA
MAX
15
Tj= 25°C
MAX
1.5
V
GATE CHARACTERISTICS
PG (AV)= 1W PGM = 10 W (tp = 20 µs)
IGM = 4 A (tp = 20 µs)
VRGM = 5 V
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
VD = 12V (DC) RL= 33Ω
IGT
Tj= 25°C
VGT
VD = 12V (DC) RL= 33Ω
VGD
VD = VDRM RL = 3.3kΩ
Tj= 125°C
MIN
0.2
V
IT= 100mA
Tj= 25°C
MAX
40
mA
IH
Gate open
VTM
ITM= 24A tp= 380µs
Tj= 25°C
MAX
1.6
V
IDRM
VD = VDRM
Tj= 25°C
MAX
10
µA
IRRM
VR = VRRM
Tj = 125°C
MAX
2
mA
dV/dt
Linear slope up to
VD=67%VDRM Gate open
Tj= 125°C
MIN
200
V/µs
ORDERING INFORMATION
TN
12
15 - 600
B (-TR)
Tape & Reel
STANDARD SCR
SENSITIVITY
CURRENT
2/5
PACKAGES :
B: DPAK
VDRM / VRRM
TN1215-600B
Fig. 1: Maximum average power dissipation
versus average on-state current .
Fig. 2 : Correlation between maximum average
power dissipation and maximum allowable
temperatures (T amb and T case) for different
thermal resistances.
P(W)
P(W)
14
12
α
α
10
α
105
110
8
6
4
115
Rth=70°C/W
4
360°
Rth=37°C/W
120
2
2
IT(av)(A)
0
2
4
α
6
8
10
0
125
0
20
60
80
Tamb(°C)
100
120
140
Fig. 4: Average and D.C. on-state current versus
ambient temperature (Printed circuit board FR4,
SCu=0.5cm2).
IT(av)(A)
IT(av)(A)
14
D.C.
12
10
α
8
6
4
2
Tcase(°C)
0
40
12
Fig. 3: Average and D.C. on-state current versus
case temperature.
0
Rth=0°C/W
10
6
0
α
12
α
8
Tcase (°C)
14
α
25
50
75
100
125
Fig. 5: Relative variation of thermal impedance
junction to ambient versus pulse duration
(recommended pad layout).
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
D.C.
α
Tamb(°C)
0
25
50
75
100
125
Fig. 6: Relative variation of gate trigger current and
holding current versus junction temperature
Igt,IH[Tj]/Ig,IH[Tj=25°C]
K=[Zth(j-a)/Rth(j-a)]
2.5
1.00
2.0
Igt
1.5
0.10
1.0
IH
0.5
tp(s)
0.01
1E-2
1E-1
1E+0
Tj(°C)
1E+1
1E+2
5E+2
0.0
-40
-20
0
20
40
60
80
100
120
140
3/5
TN1215-600B
Fig 7: Non repetitive surge peak on-state current
versus number of cycles.
120
Fig 8: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
corresponding value of I2t.
ITSM(A),I²t(A²s)
ITSM(A)
500
Tj initial=25°C
F=50Hz
100
Tj initial=25°C
ITSM
80
100
I²t
60
40
20
tp(ms)
Number of cycles
0
1
10
100
1000
Fig 9: On-state characteristics (maximum values).
100.0
10
1
2
5
10
Fig 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35µm).
ITM(A)
Rth(j-a) (°C/W)
100
Tj max.:
Vto=0.85V
Rt=30mΩ
Tj=Tj max.
80
10.0
60
Tj=25°C
40
1.0
20
S(Cu) (cm²)
VTM(V)
0.1
0.0
4/5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
0
2
4
6
8
10
12
14
16
18
20
TN1215-600B
PACKAGE MECHANICAL DATA
DPAK
DIMENSIONS
REF.
Millimeters
Min. Typ.
Max
A
2.20
2.40 0.086
0.094
A1
0.90
1.10 0.035
0.043
A2
B
0.03
0.64
0.23 0.001
0.90 0.025
0.009
0.035
B2
5.20
5.40 0.204
0.212
C
0.45
0.60 0.017
0.023
C2
0.48
0.60 0.018
0.023
D
6.00
6.20 0.236
0.244
Min. Typ. Max.
E
6.40
6.60 0.251
0.259
G
4.40
4.60 0.173
0.181
H
9.35
10.10 0.368
0.397
L2
FOOT PRINT DIMENSIONS (in millimeters)
Inches
0.80
L4
0.60
V2
0°
0.031
1.00 0.023
8°
0°
0.039
8°
WEIGHT : 0.30g
MARKING
6.7
6.7
TYPE
MARKING
TN1215-600B
TN
1215
6
6.7
3
1.6
1.6
2.3
2.3
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1998 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
http://www.st.com
5/5