TS1220-600B ® SENSITIVE SCR FEATURES IT(RMS) = 12A VDRM/VRRM = 600V IGT < 200µA HIGH ITSM = 110A (tp = 10ms) A A G K DESCRIPTION The TS1220-600B is using a high performance TOPGLASS PNPN technology and is intended for applications requiring high surge capability (like power tools, crowbar protection, capacitive discharge ignition...). DPAK (Plastic) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit 600 V VDRM VRRM Repetitive peak off-state voltage RGK = 220 Ω Tj = 125°C IT(RMS) RMS on-state current (180° conduction angle) Tc= 105°C 12 A IT(AV) Average on-state current (180° conduction angle) Tc= 105°C 8 A ITSM Non repetitive surge peak on-state current (Tj initial = 25°C ) tp = 10 ms 110 A tp = 8.3 ms 115 tp = 10 ms 40 A2s I2t I2t Value for fusing dI/dt Critical rate of rise of on-state current dIG /dt = 0.1 A/µs. IG = 10 mA 50 A/µs Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C 260 °C T Maximum temperature for soldering during 10s May 1998 - Ed: A3 1/5 TS1220-600B THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) Junction to case for D.C 1.5 °C/W Rth(j-a) Junction to ambient (S = 0.5 cm2) 70 °C/W GATE CHARACTERISTICS (maximum values) PGM = 3 W (tp = 20 µs) PG (AV)= 0.2W IGM = 1.2 A (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol Test Conditions Type Value Unit IGT VD=12V RL=140Ω Tj= 25°C MAX 200 µA VGT VD=12V Tj= 25°C MAX 0.8 V VGD VD=12V(DC) Tj= 25°C MAX 0.1 V VRG IRG = 10µA Tj= 25°C MIN 8 V Tj= 25°C MAX 5 mA IH IT=50mA RL=140Ω RL=33Ω IG=5mA RGK = 1kΩ VTM ITM= 24A tp= 380µs Tj= 25°C MAX 1.6 V IDRM VD= VDRM RGK = 220Ω Tj= 25°C MAX 10 µA IRRM VR= VRRM RGK = 220Ω Tj= 125°C MAX 2 mA dV/dt VD=67%VDRM RGK = 220Ω Tj= 125°C MIN 5 V/µs ORDERING INFORMATION Add "-TR" suffix for Tape and Reel shipment TS 12 20 - 600 THYRISTOR SENSITIVE VOLTAGE CURRENT SENSITIVITY 2/5 B PACKAGE B = DPAK TS1220-600B Fig 1: Maximum average power dissipation versus average on-state current. P(W) 14 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 α α α α 10 α 8 6 4 180° 2 α IT(AV)(A) 0 1 2 3 4 5 6 7 8 α IT(AV)(A) D.C. α Tcase(°C) 0 25 50 75 100 125 Fig 4: Relative variation of thermal impedance junction to case versus pulse duration. 1.0 α Rth=0°C/W 105 110 115 Rth(j-a)=37°C/W 120 Rth(j-a)=80°C/W 125 0 25 9 10 11 12 Fig 3-1: Average and D.C. on-state current versus case temperature. 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Tcase (°C) P(W) 12 0 Fig 2: Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tcase). Note: Rth=0°C/W is infinite heatsink. 50 75 Tamb(°C) 100 125 Fig 3-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout). 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IT(AV)(A) α Tamb(°C) 0 25 50 75 100 125 Fig 4-2: Relative variation of thermal impedance junction to ambient versus pulse duration (recomended pad layout). K=[Zth(j-a)/Rth(j-a)] K=[Zth(j-c)/Rth(j-c)] 1.00 0.5 0.10 0.2 tp(s) tp(s) 0.1 1E-3 1E-2 1E-1 1E+0 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 3/5 TS1220-600B Fig 5: Relative variation of gate trigger current and holding current versus junction temperature. IGT,IH[Tj]/IGT,IH[Tj=25°C] 2.0 1.8 IGT 1.6 1.4 1.2 IH 1.0 0.8 0.6 0.4 0.2 Tj(°C) 0.0 -40 -20 0 20 40 60 5.0 IH[RGK] / IH [RGK=1kΩ] Tj=25°C 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 80 100 120 140 Fig 7: Non repetitive surge peak on-state current versus number of cycles. 120 110 100 90 80 70 60 50 40 30 20 10 0 Fig 6: Relative variation of holding current versus gate-cathode resistance (typical values). RGK( Ω) 0.0 1E+1 1E+2 1E+3 1E+4 Fig 8: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. ITSM(A),I²t(A²s) ITSM(A) 500 Tj initial=25°C F=50Hz Tj initial=25°C ITSM 100 I²t Number of cycles 1 10 tp(ms) 100 1000 Fig 9: On-state characteristics (maximum values). 10 2 5 10 Fig 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm). ITM(A) Rth(j-a) (°C/W) 100.0 100 Tj max.: Vto=0.85V Rt=31m Ω 10.0 1 80 Tj=Tj max. 60 40 Tj=25°C 1.0 20 S(Cu) (cm²) VTM(V) 0.1 0.0 4/5 0.5 1.0 1.5 2.0 2.5 0 3.0 3.5 4.0 0 2 4 6 8 10 12 14 16 18 20 TS1220-600B PACKAGE MECHANICAL DATA DPAK (Plastic) DIMENSIONS REF. Millimeters Inches Min. Typ. Max Min. Typ. Max. A 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 A2 B 0.03 0.64 0.23 0.001 0.90 0.025 0.009 0.035 B2 5.20 5.40 0.204 0.212 C 0.45 0.60 0.017 0.023 C2 0.48 0.60 0.018 0.023 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.251 0.259 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.397 L2 0.80 L4 0.60 V2 0° 0.031 1.00 0.023 8° 0.039 0° 8° MARKING FOOT PRINT DIMENSIONS (in millimeters) 6.7 TYPE MARKING TS1220-600B TS 1220 6 6.7 6.7 3 1.6 1.6 2.3 2.3 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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