STMICROELECTRONICS TS472EIJT

TS472
Very Low Noise Microphone Preamplifier
with 2V Biased Output and Active Low Standby Mode
■
Low noise: 10nV/√Hz typ. equivalent input
noise @ F = 1kHz
■
Fully differential input/output
■
2.2V to 5.5V single supply operation
■
Low power consumption @20dB: 1.8mA
■
Fast start up time @ 0dB: 5ms typ.
■
Low distortion: 0.1% typ.
■
40kHz bandwidth @ -3dB and adjustable
■
Active low standby mode function (1µA max)
■
Low noise 2.0V microphone bias output
■
Available in flip-chip lead-free package
■
ESD protection (2kV)
Flip-chip - 12 bumps
Pin Connections (top view)
Description
C1
C2
STDBY
VCC
OUTPUT
BIAS
GS
OUT+
OUT-
IN+
IN-
GND
BYPASS
The TS472 is a differential-input microphone
preamplifier optimized for high-performance, PDA
and notebook audio systems.
This device features an adjustable gain from 0dB
to 40dB with excellent power-supply and
common-mode rejection ratios. In addition, the
TS472 has a very low-noise microphone bias
generator of 2V.
Applications
It also includes a complete shutdown function,
with active low standby mode.
■
Video and photo cameras with sound input
■
Sound acquisition & voice recognition
■
Video conference systems
■
Notebook computers and PDAs
Order Codes
Part Number
TS472EIJT
October 2005
Temperature Range
Package
Packing
Marking
-40, +85°C
Flip-Chip
Tape & Reel
472
Rev 2
1/20
www.st.com
20
Typical Application Schematic
1
TS472
Typical Application Schematic
Figure 1 shows a typical application schematic for the TS472 with gain = 20dB. To change the
gain see Chapter 4.5: Gain settings on page 14.
Figure 1.
Application schematic
Optional
C1
VCC
Cs
1uF
Cin+
A3
B3
TS472
Cout+
A1
IN+
OUT+
C2
B1
IN-
OUT-
D2
+
Electret Mic
Vcc
C2
U1
C2
C1
Rpos
D3
C3
1uF
Positive Output
Negative Output
Cout-
CinRneg
G
BIAS
2.0V
GND
STDBY
C3
Bias
C1
A2
GAIN
SELECT
B2
BYPASS
D1
Rout+
Rout-
Cb
1uF
Standby Control
Table 1.
External component descriptions
Components
Cin+, Cin-
Input coupling capacitors which blocks the DC voltage at the amplifier input terminal
and determine Lower cut-off frequency.
Cout+, Cout-
Output coupling capacitors which blocks the DC voltage coming from the amplifier
output terminal (pins C2 and D2) and determine Lower cut-off frequency.
Rout+, Rout-
Output load resistors which allow to charged the output coupling capacitors Cout.
These output resistors can be represented by an input impedance of a following
stage.
Rpos, Rneg
Microphone biasing resistors
Cs
Supply Bypass capacitor which provides power supply filtering.
Cb
Bypass pin capacitor which provides half supply filtering.
C1, C2
C3
2/20
Functional Description
Low pass filter capacitors which can determine Higher cut-off frequency.
Bias output capacitor which keeps voltage stabilized and provides 2.0V bias filtering.
TS472
2
Absolute Maximum Ratings
Absolute Maximum Ratings
Table 2.
Key parameters and their absolute maximum ratings
Symbol
VCC
Vi
Parameter
Supply voltage (1)
Input Voltage
Value
Unit
6
V
GND-0.3 to VCC+0.3
V
Toper
Operating Free Air Temperature Range
-40 to + 85
°C
Tstg
Storage Temperature
-65 to +150
°C
Maximum Junction Temperature
150
°C
Rthja
Flip-chip Thermal Resistance Junction to Ambient
180
°C/W
ESD
Human Body Model
2
kV
ESD
Machine Model
200
V
Lead Temperature (soldering, 10sec)
250
°C
Value
Unit
2.2 to 5.5
V
20
dB
1.5 ≤ VSTB ≤ V CC
GND ≤ VSTB ≤ 0.4
V
-40 to +85
°C
150
°C/W
Tj
1. All voltages values are measured with respect to the ground pin.
Table 3.
Operating conditions
Symbol
VCC
G
Parameter
Supply Voltage
Typical Differential Gain (GS connected to 4.7kΩ or
Bias)
VSTB
Standby Voltage Input:
Device ON
Device OFF
TOP
Operational Free Air Temperature Range
Rthja
Flip-chip Thermal Resistance Junction to Ambient
3/20
Electrical Characteristics
3
TS472
Electrical Characteristics
Table 4.
VCC = 3V, GND = 0V, Tamb = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Unit
Equivalent Input Noise Voltage Density
REQ=100Ω at 1KHz
10
nV
-----------Hz
Total Harmonic Distortion + Noise
20Hz ≤ F≤ 20kHz, Gain=20dB, Vin=50mVRMS
0.1
%
VIN
Input Voltage, Gain=20dB
10
BW
Bandwidth @ -3dB
Bandwidth @ -1dB
pin A3, B3 floating
40
20
en
THD+N
G
Overall Output Voltage Gain (Rgs variable)
Minimum Gain, Rgs infinite
Maximum Gain, Rgs=0
70
mVRMS
kHz
-3
39.5
-1.5
41
0
42.5
dB
Input impedance referred to GND
80
100
120
kΩ
RLOAD
Resistive load
10
CLOAD
Capacitive load
ZIN
ICC
Supply current, Gain=20dB
kΩ
1.8
ISTANDBY Standby current
PSRR
Table 5.
Power Supply Rejection Ratio, Gain=20dB, F=217Hz,
Vripple=200mVpp, Inputs grounded
Differential Output
Single-Ended Outputs,
100
pF
2.4
mA
1
µA
dB
-70
-46
Bias output: V CC = 3V, GND = 0V, Tamb = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VOUT
No load condition
1.9
2
2.1
V
ROUT
Output resistance
80
100
120
Ω
IOUT
Output Bias Current
PSRR
4/20
Max.
Power Supply Rejection Ratio, F=217Hz,
Vripple=200mVpp
70
2
mA
80
dB
TS472
Electrical Characteristics
Table 6.
Differential RMS noise voltage
Input Referred Noise Voltage
(µVRMS)
Gain
(dB)
Unweighted Filter
A-weighted Filter
Unweighted Filter
A-weighted Filter
0
15
10
15
10
20
3.4
2.3
34
23
40
1.4
0.9
141
91
Table 7.
Table 8.
Bias output RMS noise voltage
Cout
(µF)
Unweighted Filter
(µVRMS)
A-weighted Filter
(µVRMS)
1
5
4.4
10
2.2
1.2
SNR (signal to noise ratio), THD+N < 0.5%
Unweighted Filter
(dB)
Gain
(dB)
Note:
Output Noise Voltage
(µVRMS)
A-weighted Filter
(dB)
Vcc=2.2V
Vcc=3V
Vcc=5.5V
Vcc=2.2V
Vcc=3V
Vcc=5.5V
0
75
76
76
79
80
80
20
82
83
83
89
90
90
40
70
72
74
80
82
84
Unweighted filter = 20Hz ≤ F ≤ 20kHz
5/20
Electrical Characteristics
Table 9.
TS472
Index of graphics
Description
Figure
Page
Figure 2 to 3
page 7
Standby threshold voltage vs. power supply voltage
Figure 4
page 7
Frequency response
Figure 5
page 7
Bias output voltage vs. bias output current
Figure 6
page 7
Bias output voltage vs. power supply voltage
Figure 7
page 7
Figure 8 to 9
page 8
Differential output PSRR vs. frequency
Figure 10 to 11
page 8
Differential output PSRR vs. frequency
Figure 12 to 13
page 8
Single-ended output PSRR vs. frequency
Figure 14
page 9
Equivalent input noise voltage density
Figure 15
page 9
D gain vs. power supply voltage
Figure 16
page 9
Dgain vs. ambient temperature
Figure 17
page 9
Maximum input voltage vs. gain, THD+N<1%
Figure 18 to 19
page 9
THD+N vs. input voltage
Figure 20 to 25
page 10
THD+N vs. frequency
Figure 26 to 27
page 11
Transient response
Figure 28 to 29
page 11
Current consumption vs. power supply voltage
Bias PSRR vs. frequency
6/20
TS472
Electrical Characteristics
Figure 2.
Current consumption vs. power
supply voltage
Figure 3.
3.0
3.0
No Loads, Maximum Gain
No Loads, Minimum Gain
2.5
Current Consumption (mA)
Current Consumption (mA)
2.5
2.0
1.5
1.0
T AMB =-40°C
0.5
TAMB=25°C
T AMB =85°C
0.0
2.0
1.5
1.0
T AMB=-40°C
Figure 4.
3
4
Power Supply Voltage (V)
5
5.5
Standby threshold voltage vs.
power supply voltage
2.2
Figure 5.
30
0.8
20
PSRR (dB)
1.0
0.6
0.4
TAMB =85°C
3
4
Power Supply Voltage (V)
5
5.5
Frequency response
Cb=1 µF, T AMB =25 °C, Gain=20dB, Rout=100k Ω
10
no C1,C2
C1,C2=100pF
0
Cin,Cout=100nF
0.2
0.0
C1,C2=220pF
-10
Cin,Cout=10nF
No Loads
Tamb = 25°C
2.2
Figure 6.
3
4
Power Supply Voltage (V)
5
5.5
Bias output voltage vs. bias output
current
-20
10
100
Figure 7.
2.2
1000
Frequency (Hz)
10000
100000
Bias output voltage vs. power
supply voltage
2.2
Bias Output Voltage (V)
Tamb=25°C
Bias Output Voltage (V)
TAMB =25°C
0.5
0.0
2.2
Standby Treshold Voltage (V)
Current consumption vs. power
supply voltage
2.0
Tamb=85°C
1.8
Tamb=-40°C
1.6
Ibias=0mA
2.0
Ibias=2mA
1.8
Ibias=4mA
1.6
Tamb=25°C
1.4
1.4
0
1
2
3
Bias Output Current (mA)
4
2.2
3
4
Power Supply Voltage (V)
5
5.5
7/20
Electrical Characteristics
Figure 8.
TS472
Bias PSRR vs. frequency
Figure 9.
0
0
-40
Vripple=200mVpp
Vcc=3V
Cb=1 µ F
Tamb =25°C
-20
PSRR (dB)
PSRR (dB)
-20
Bias PSRR vs. frequency
Bias floating or 1kΩ to GND
-60
Vripple=200mVpp
Vcc=5V
Cb=1 µ F
Tamb=25 °C
Bias=1kΩ to GND
-40
-60
-80
-80
-100
-100
Bias floating
50
100
1k
10k
50
20k
100
1k
Frequency (Hz)
Figure 10. Differential output PSRR vs.
frequency
0
V RIPPLE =200mV PP, Inputs grounded
V RIPPLE =200mV PP , Inputs grounded
V CC=3V, Cb=Cin=1 µF, T AMB =25 °C
-20
V CC =5V, Cb=Cin=1 µ F, TAMB =25 °C
Maximum Gain
PSRR (dB)
PSRR (dB)
Maximum Gain
-40
Gain=20dB
-60
Minimum Gain
-80
-100
50
-40
-60
100
1k
Frequency (Hz)
10k
-100
50
20k
Minimum Gain
100
1k
Frequency (Hz)
10k
20k
10k
20k
Figure 13. Differential output PSRR vs.
frequency
0
0
V RIPPLE=200mV PP , Inputs grounded
V RIPPLE =200mV PP , Inputs grounded
V CC =3V, Minimum Gain, Cin=1µ F, T AMB =25°C
-40
-20
PSRR (dB)
PSRR (dB)
Gain=20dB
-80
Figure 12. Differential output PSRR vs.
frequency
-20
20k
Figure 11. Differential output PSRR vs.
frequency
0
-20
10k
Frequency (Hz)
Cb=1µ F
No Cb
Cb=100nF
-60
V CC =3V, Gain=20dB, Cin=1 µ F, T AMB =25°C
-40
Cb=1 µ F
No Cb
-60
-80
-80
-100
50
-100
50
Cb=100nF
8/20
100
1k
Frequency (Hz)
10k
20k
100
1k
Frequency (Hz)
TS472
Electrical Characteristics
Figure 14. Single-ended output PSRR vs.
frequency
Figure 15. Equivalent input noise voltage
density
0
1000
PSRR (dB)
-20
-30
Cin=100nF
R EQ =100 Ω
Vcc=3V
TAMB=25 °C
en (nV/√Hz )
Vripple=200mVpp
Inputs grounded
Cb=1 µ F
Cin=100nF
Tamb=25°C
-10
-40
-50
100
10
-60
-70
Vcc=2.2V
Vcc=5V
1
10
-80
100
50
1000
Frequency (Hz)
10000 20k
Figure 16. ∆ gain vs. power supply voltage
10k
100k
0.50
F=1kHz
Vin=5mV
Tamb=25°C
0.8
0.25
Maximum Gain
0.6
F=1kHz
V IN =5mV
0.00
∆Gain (dB)
∆Gain (dB)
1k
Frequency (Hz)
Figure 17. ∆gain vs. ambient temperature
1.0
0.4
0.2
-0.25
Maximum Gain
-0.50
0.0
Gain=20dB
Minimum Gain
-0.2
-0.75
Gain=20dB
-0.4
2.2
3
4
Power Supply Voltage (V)
5
140
Maximum Input Voltage (mV RMS)
TAMB =25°C
F=1kHz
THD+N<1%
100
50
V CC =3V
V CC =2.2V
0
-20
T AMB =25°C, F=1kHz, THD+N<1%
10
20
Gain (dB)
30
60
80
40
Gain=0dB
120
100
80
60
Gain=40dB
40
Gain=30dB
Gain=20dB
20
0
0
0
20
40
Ambient Temperature (°C)
Figure 19. Maximum input voltage vs. power
supply voltage, THD+N<1%
150
V CC =5.5V
Minimum Gain
-1.00
-40
5.5
Figure 18. Maximum input voltage vs. gain,
THD+N<1%
Maximum Input Voltage (mVRMS)
100
2.2
3
4
Power Supply Voltage (V)
5
5.5
9/20
Electrical Characteristics
TS472
Figure 20. THD+N vs. input voltage
Figure 21. THD+N vs. input voltage
10
10
Minimum Gain
Minimum Gain
Gain=20dB
1
THD+N (%)
THD+N (%)
1
0.1
Gain=20dB
0.1
Maximum Gain
Maximum Gain
Tamb=25°C, Vcc=3V, F=100Hz,
Cb=1 µ F, RL=10k Ω , BW=100Hz-120kHz
0.01
1E-3
0.01
0.01
0.1
0.3
1E-3
Input Voltage (V RMS )
0.01
10
Minimum Gain
Minimum Gain
Gain=20dB
Gain=20dB
1
THD+N (%)
1
0.1
0.1
Maximum Gain
Maximum Gain
Tamb=25°C, Vcc=3V, F=1kHz,
Cb=1µ F, RL=10k Ω , BW=100Hz-120kHz
1E-3
0.01
0.01
0.1
1E-3
0.3
Figure 24. THD+N vs. input voltage
0.1
0.3
0.1
0.3
10
Minimum Gain
Minimum Gain
Maximum Gain
1
Maximum Gain
1
Gain=20dB
THD+N (%)
THD+N (%)
0.01
Figure 25. THD+N vs. input voltage
10
0.1
T AMB =25°C, V CC =3V, F=20kHz,
0.01
Input Voltage (V RMS )
Gain=20dB
0.1
0.01
Cb=1 µ F, RL=10kΩ , BW=100Hz-120kHz
1E-3
10/20
Tamb=25°C, Vcc=5V, F=1kHz,
Cb=1µ F, RL=10k Ω , BW=100Hz-120kHz
Input Voltage (V RMS )
Input Voltage (V RMS )
0.01
0.3
Figure 23. THD+N vs. input voltage
10
0.01
0.1
Input Voltage (V RMS )
Figure 22. THD+N vs. input voltage
THD+N (%)
Tamb=25°C, Vcc=5V, F=100Hz,
Cb=1µ F, RL=10kΩ , BW=100Hz-120kHz
0.1
0.3
1E-3
Tamb=25°C, Vcc=5V, F=20kHz,
Cb=1µ F, RL=10k Ω , BW=100Hz-120kHz
0.01
Input Voltage (V RMS )
TS472
Electrical Characteristics
Figure 26. THD+N vs. frequency
Figure 27. THD+N vs. frequency
10
10
Tamb=25°C, Vcc=3V, RL=10kΩ
Cb=1µ F, BW=100Hz-120kHz
Tamb=25°C, Vcc=5V, RL=10kΩ
Cb=1µ F, BW=100Hz-120kHz
Maximum Gain, Vin=15mVRMS
Maximum Gain, Vin=15mVRMS
1
Minimum Gain, Vin=100mVRMS
THD + N (%)
THD + N (%)
1
Gain=20dB, Vin=50mVRMS
0.1
0.01
Minimum Gain, Vin=100mV RMS
Gain=20dB, Vin=50mVRMS
0.1
0.01
50
100
1000
Frequency (Hz)
Figure 28. Transient response
10000
20k
50
100
1000
Frequency (Hz)
10000
20k
Figure 29. Transient response
11/20
Application Information
TS472
4
Application Information
4.1
Differential configuration principle
The TS472 is a full-differential input/output microphone preamplifier. The TS472 also includes a
common mode feedback loop that controls the output bias value to average it at Vcc/2. This
allows the device to always have a maximum output voltage swing, and by consequence,
maximize the input dynamic voltage range.
The advantages of a full-differential amplifier are:
4.2
●
Very high PSRR (Power Supply Rejection Ratio).
●
High common mode noise rejection.
●
In theory, the filtering of the internal bias by an external bypass capacitor is not necessary.
But, to reach maximum performances in all tolerance situations, it’s better to keep this
option.
Higher cut-off frequency
The higher cut-off frequency FCH of the microphone preamplifier depends on an external
capacitors C1, C2.
TS472 has an internal first order low pass filter (R=40kΩ, C=100pF) to limit the highest cut-off
frequency on 40kHz (with a 3dB attenuation). By connecting C1, C2 you can decrease FCH with
regard to following formula:
1
F CH = ---------------------------------------------------------------------------------3
–12
2π ⋅ 40 ×10 ⋅ ( C 1, 2 + 100 ×10 )
Figure 24, which follows, directly shows the higher cut-off frequency in Hz versus the value of
the output capacitors C1, C2 in nF:
Figure 30. Higher cut-off frequency vs. output capacitors
Higher Cut-off Frequency (kHz)
40
10
1
200
400
600
C1, C2 (pF)
800
For example, FCH is almost 20kHz with C1,2=100pF.
12/20
1000
TS472
4.3
Application Information
Lower cut-off frequency
The lower cut-off frequency FCL of the microphone preamplifier depends on the input
capacitors Cin and output capacitors C out. These input and output capacitors are mandatory in
a application because of DC voltage blocking.
The input capacitors Cin in serial with the input impedance of the TS472 (100kΩ) are equivalent
to a first order high pass filter. Assuming that FCL is the lowest frequency to be amplified (with a
3dB attenuation), the minimum value of Cin is:
1
C in = ---------------------------------------------3
2π ⋅ F CL ⋅ 100 ×10
The capacitors Cout in serial with the output resistors R out (or an input impedance of the next
stage) are also equivalent to a first order high pass filter. Assuming that FCL is the lowest
frequency to be amplified (with a 3dB attenuation), the minimum value of Cout is:
1
C out = ------------------------------------2π ⋅ F CL ⋅ R out
Figure 31. Lower cut-off frequency vs.
input capacitors
Figure 32. Lower cut-off frequency vs.
output capacitors
1000
1000
Rout=10kΩ
Typical Zin
100
ZinMIN
10
Lower Cut-off frequency (Hz)
Lower Cut-off frequency (Hz)
ZinMAX
100
Rout=100kΩ
10
1
10
Cin (nF)
100
1
10
100
1000
Cout (nF)
Figure 30 and Figure 32 give directly the lower cut-off frequency (with 3dB attenuation) versus
the value of the input or output capacitors
Note:
In case FCL is kept the same for calculation, It must be taken in account that the 1st order highpass filter on the input and the 1st order high-pass filter on the output create a 2nd order highpass filter in the audio signal path with an attenuation of 6dB on FCL and a rolloff of
40db⁄ decade.
4.4
Low-noise microphone bias source
The TS472 provides a very low noise voltage and power supply rejection BIAS source designed
for biasing an electret condenser microphone cartridges. The BIAS output is typically set at
2.0 VDC (no load conditions), and can typically source 2mA with respect to drop-out,
determined by the internal resistance 100Ω (for detailed load regulation curves see Figure 6).
13/20
Application Information
4.5
TS472
Gain settings
The gain in the application depends mainly on:
●
the sensitivity of the microphone,
●
the distance to the microphone,
●
the audio level of the sound,
●
the desired output level.
The sensitivity of the microphone is generally expressed in dB/Pa, referenced to 1V/Pa. For
example, the microphone used in testing had an output voltage of 6.3 mV for a sound pressure
of 1 Pa (where Pa is the pressure unit, Pascal). Expressed in dB, the sensitivity is:
20Log(0.0063) = -44 dB/Pa
To facilitate the first approach, the following table gives voltages and gains used with a low cost
omnidirectional Electret Condenser Microphone of -44dB/Pa.
Table 10.
Typical TS472 gain vs. distance to the microphone (sensitivity -44dB/Pa)
Distance to microphone
Microphone output voltage
TS472 Gain
1 cm
30 mVRMS
20
20 cm
3 mV RMS
100
The gain of the TS472 microphone preamplifier can be set:
From -1.5 dB to 41 dB by connecting an external grounded resistor RGS to the GS pin. It
1.
allows to adapt more precisely the gain to each application.
Table 11.
Selected gain vs. gain select resistor
Gain (dB)
0
10
20
30
40
RGS (Ω)
470k
27k
4k7
1k
68
Figure 33. Gain in dB vs. gain select
resistor
50
Figure 34. Gain in V/V vs. gain select
resistor
Tamb=25 °C
Tamb=25°C
100
40
Gain (V/V)
Gain (dB)
30
20
10
10
0
-10
10
14/20
1
100
1k
10k
R GS (Ω )
100k
1M
10
100
1k
10k
R GS (Ω )
100k
1M
TS472
Application Information
2.
To 20dB by applying VGS > 1VDC on Gain Select (GS) pin. This setting can help to reduce
a number of external components in an application, because 2.0 VDC is provided by
TS472 itself on BIAS pin.
Following Figure 26 gives other values of the gain vs. voltage applied on GS pin
Figure 35. Gain vs. gain select voltage
Tamb=25 °C
40
Gain (dB)
20
0
-20
-40
-60
-80
0.2
0.4
0.6
V GS (V )
0.8
4
5
Wake-up time
When the standby is released to put the device ON, a signal appears on the output a few
microseconds later, and the bypass capacitor Cb is charged in a few milliseconds. As Cb is
directly linked to the bias of the amplifier, the bias will not work properly until the Cb voltage is
correct.
In the typical application, when a biased microphone is connected to the differential input via
the input capacitors (Cin), (and the output signal is in line with the specification), the wake-up
time will depend upon the values of the input capacitors Cin and the gain. When gain is lower
than 0dB, the wake-up time is determined only by the bypass capacitor Cb, as described
above. For a gain>0dB, see Figure 36
Figure 36. Wake-up time in the typical application vs. input capacitors
60
50
Wake-up Time (ms)
4.6
0
Tamb = 25°C
Vcc=3V
Cb=1µ F
40
Maximum Gain
Gain=20dB
30
20
10
0
20
40
60
Input capacitors C IN (nF)
80
100
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Application Information
4.7
TS472
Standby mode
When the standby command is set, the time required to set the output stages (differential
outputs and 2.0V bias output) in high impedance and the internal circuitry in shutdown mode is
a few microseconds.
4.8
Layout considerations
The TS472 has sensitive pins to connect C1, C2 and Rgs. To obtain high power supply
rejection and low noise performance, it is mandatory that the layout track to these component is
as short as possible.
Decoupling capacitors on Vcc and bypass pin are needed to eliminate power supply drops. In
addition, the capacitor location for the dedicated pin should be as close to the device as
possible.
4.9
Demoboard
A demoboard for the TS472 is available.
For more information about this demoboard, please refer to Application Note AN2240, which
can be found on www.st.com.
Figure 37. Top layer
Figure 39. Component location
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Figure 38. Bottom layer
TS472
Application Information
Figure 40. Demoboard schematic
Jumper J4
1
100pF
2
2
100nF
C2
1
2
1
C8
2
R6
100nF
100nF
POS. INPUT
NEG. INPUT
1
IN+
OUT+ 13
8
IN-
OUT-
OUTPUT
2
3
C2
TS472_FC_Adapter
6
Jumper J2
12
C5
1
INPUT
2
100nF
GAIN
SELECT
P8
5
20dB
Min
Max
Rgs
1
Gain
Bias 4
BIAS
Bias
BYPASS
10
1
3
5
7
2
4
6
8
1 R1
P6
VCC
1
2
3
2
470k
1 R2
P9
Jumper J1
Bias
Gain Select
2
STDBY
C3
1uF
2
2
R11
15
C11
GND
1
1
2
1
R7
9
4
3
2
1
Vcc
2
C1
14
C4
P1
4
3
2
1
POS. OUTPUT
NEG. OUTPUT
R8
100k
1
2
100pF
1
P2
R9
100k
2
C7
1uF
2
C10
1uF
1
2
1
Bias
C6
100nF
C9
2
1
C1
1
Vcc
R10
1
VCC
1
2
2
1
2
Vx
P5
1
P11 Vbias
1
2
1
P10
0dB
10dB
20dB
30dB
40dB
1
3
5
7
9
2
4
6
8
10
Rgs
2
27k
1 R3
2
4.7k
1 R4
2
1k
StandBy
1 R5
Jumper J3
2
68
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Package Mechanical Data
5
TS472
Package Mechanical Data
Figure 41. TS472 footprint recommendation
75µmmin.
100µmmax.
500µm
500µm
Track
Φ=400µmtyp.
150µmmin.
Φ=340µmmin.
500µm
500µm
Φ=250µm
Non Solder mask opening
Pad in Cu 18µmwith Flash NiAu(2-6µm, 0.2µmmax.)
Figure 42. Pin-out (top view)
3
C1
2
OUTPUT
BIAS
1
C2
STDBY
VCC
GS
OUT+
OUT-
IN+
IN-
GND
BYPASS
A
B
C
D
n Balls are underneath
Figure 43. Marking (top view)
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■
ST Logo
■
Part number: 472
■
E Lead free Bumps
■
Three digits Datecode: YWW
■
The dot is for marking pin A1
E
472
YW W
TS472
Package Mechanical Data
Figure 44. Flip-chip - 12 bumps
2.1 mm
1.6 mm
0.5mm
0.5mm
∅0.315mm
6
0
0
µ
m
■
Die size: 2.1mm x 1.6mm ± 30µm
■
Die height (including bumps): 600µm
■
Bumps diameter: 315µm ±50µm
■
Bump Diameter Before Reflow: 300µm ±10µm
■
Bumps Height: 250µm ±40µm
■
Die Height: 350µm ±20µm
■
Pitch: 500µm ±50µm
■
Coplanarity: 50µm max
Figure 45. Tape & reel specification (top view)
1.5
4
1
1
A
Die size Y + 70µm
A
8
Die size X + 70µm
4
All dimensions are in mm
User direction of feed
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Revision History
6
TS472
Revision History
Date
Revision
Changes
July 2005
1
First Release corresponding to the product preview version.
Oct. 2005
2
First release of fully mature product datasheet.
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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