Specification Comparison Vishay Siliconix Si4501ADY vs. Si4501DY Description: Complementary MOSFET Half-Bridge (N- and P-Channel) Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4501ADY Replaces Si4501DY Si4501ADY—E3 (Lead Free version) Replaces Si4501DY Si4501ADY-T1 Replaces Si4501DY-T1 Si4501ADY-T1—E3 (Lead Free version) Replaces Si4501DY-T1 Summary of Performance: The Si4501ADY is the replacement for the original Si4501DY; both parts perform identically including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Parameter Symbol Channel Si4501ADY Si4501DY Drain-Source Voltage VDS N-Ch P-Ch 30 −8 30 −8 Gate-Source Voltage VGS N-Ch P-Ch "20 "8 "20 "8 N-Ch P-Ch 8.8 −5.7 9.0 −6.2 N-Ch P-Ch 7.0 −4.5 7.4 −5.0 IDM N-Ch P-Ch 30 −30 30 −20 IS N-Ch P-Ch 1.8 −1.8 1.7 −1.7 2.5 2.5 1.6 1.6 Tj and Tstg −55 to 150 −55 to 150 _C RthJA 50 50 _C/W TA = 25_C Continuous Drain Current ID TA = 70_C Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25_C PD TA = 70_C Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Unit V A W SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Si4501ADY Parameter Symbol Channel Min Typ Si4501DY Max Min Typ Max Unit Static V(BR)DSS N-Ch P-Ch 30 −8 Gate-Threshold Voltage VG(th) N-Ch P-Ch 0.8 −0.45 Gate-Body Leakage IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current On State Drain Current On-State Drain Source On Drain-Source On-Resistance Resistance IDSS VGS = 10 V VGS = −4.5 V ID(on) D( ) Diode Forward Voltage Document Number: 72891 14-Jun-04 1.8 −1.0 N-Ch P-Ch V 0.8 −0.45 "100 "100 nA 1 −1 1 −1 mA N-Ch 30 30 P-Ch −20 −20 A VGS = 10 V N-Ch 0.015 0.018 0.015 0.018 VGS = −4.5 V P-Ch 0.030 0.042 0.034 0.042 N-Ch 0.022 0.027 0.022 0.027 0.060 0.048 0.060 VGS = 4.5 V rDs(on) D ( ) VGS = −2.5 V Forward Transconductance 30 −8 P-Ch 0.048 gfs N-Ch P-Ch 18 12 VSD N-Ch P-Ch 0.73 −0.75 20 14 −1.1 0.71 −0.70 W S 1.1 −1.1 V www.vishay.com 1 Specification Comparison Vishay Siliconix SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Si4501ADY Parameter Symbol Channel Min Si4501DY Typ Max 20 20 Min Typ Max 4.5 15 20 25 Unit Dynamic Total Gate Charge Qg N-Ch P-Ch 11.5 13.5 Gate-Source Charge Qgs N-Ch P-Ch 3 2.2 3.3 3.0 Gate-Drain Charge Qgd N-Ch P-Ch 4 3 6.6 2.0 td(on) N-Ch P-Ch 15 21 22 40 13 20 20 40 tr N-Ch P-Ch 8 45 15 70 9 50 18 100 td(off) N-Ch P-Ch 35 60 50 100 35 110 50 220 tf N-Ch P-Ch 10 55 20 85 17 60 30 120 trr N-Ch P-Ch 30 50 60 100 35 60 70 100 nC Switching Turn-On Time Turn Off Time Turn-Off Source-Drain Reverse Recovery Time www.vishay.com 2 ns Document Number: 72891 14-Jun-04