TS512,A HIGH SPEED PRECISION DUAL OPERATIONAL AMPLIFIERS .. .. .. . . LOW OFFSET VOLTAGE : 500µV max. LOW POWER CONSUMPTION SHORT CIRCUIT PROTECTION LOW DISTORTION, LOW NOISE HIGH GAIN-BANDWIDTH PRODUCT HIGH CHANNEL SEPARATION ESD INTERNAL PROTECTION MACROMODEL INCLUDED IN THIS SPECIFICATION DESCRIPTION The TS512 is a high performance dual operational amplifier with frequency and phase compensation built intothe chip. The internal phasecompensation allows stable operation as voltage follower in spite of its high gain-bandwidth products. The circuit presents very stable electrical characteristics over the entire supply voltage range, and is particularlyintended for professional and telecom applications (active filter, etc). N DIP8 (Plastic Package) D SO8 (Plastic Micropackage) ORDER CODES Part Number Temperature Range -40, +125oC TS512I o -40, +125 C TS512AI Package N D • • • • PIN CONNECTIONS (top view) 8 VCC + 7 Output - 6 Inve rting Input 2 + 5 Non-inve rting Input 2 Output 1 1 Inve rting Input 1 2 - Non-inve rting Input 1 3 + VCC - 4 March 1998 TS512,A SCHEMATIC DIAGRAM (1/2 TS512) Non-inverting input Inverting input 8 D7 D6 R1 R3 R2 R4 Q13 Q2 Q1 Q5 Q4 Q6 Q3 D1 R5 Q 14 Q12 Q7 Q9 Q10 Q8 R6 O utput D2 Q11 R7 Q 18 C1 Q19 Q17 Q15 Q 16 D3 Q23 Q 21 D5 Q22 Q20 C2 D4 R9 R8 R10 4 ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Supply Voltage ±18 V Vi Input Voltage ±VCC Vid Differential Input Voltage ± (VCC - 1) Operating Free Air Temperature Range -40 to +125 VCC Toper Ptot Tj Tstg 2/7 Parameter o o C Power Dissipation at Tamb = 70 C 500 Junction Temperature 150 o -65 to +150 o Storage Temperature Range mW C C TS512,A ELECTRICAL CHARACTERISTICS (VCC = ±15V, Tamb = 25oC, unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit mA ICC Supply Current 0.7 1.2 Iib Input Bias Current 50 150 nA 300 nA Tmin. < Top < Tmax. Ri Input Resistance Vio Input Offset Voltage f = 1kHz Tmin. < Top < Tmax. DV io Iio Input Offset Voltage Drift 1 TS512 TS512A 0.5 TS512 TS512A Tmin. < Top < Tmax. 5 Tmin. < Top < Tmax. Input Offset Current Drift Ios Output Short Circuit Current Avd Large Signal Voltage Gain RL = 2kΩ Gain-bandwidth Product f = 100kHz Equivalent Input Noise Voltage f = 1kHz Rs = 50Ω Rs = 1kΩ Rs = 10kΩ GBP en Tmin. < Top < Tmax. VCC = ±15V VCC = ±4V Total Harmonic Distortion AV = 20dB VO = 2VPP RL = 2kΩ f = 1kHz ±Vopp Output Voltage Swing RL = 2kΩ VCC = ±15V VCC = ±4V 100 95 dB 1.8 3 MHz f = 10kHz ±13 RL = 10kΩ 0.8 Common Mode Rejection Ratio Vic = 10V 90 Vic = 1V nA 90 Unity Gain, R L = 2kΩ f = 1kHz nA 40 mA Large Signal Voltage Swing Supply Voltage Rejection Ratio 20 23 Slew Rate Channel Separation o µV/ C nA SR SVR mV 0.08 Vopp VO1/VO2 3.5 1.5 °C nV THD CMR mV 2 Input Offset Current DIio MΩ 2.5 0.5 f = 100Hz 8 10 18 15 √ Hz 0.03 0.1 % ±3 28 VPP 1.5 V/µs dB 90 100 V dB 120 dB 3/7 TS512,A .. . LOW OFFSET VOLTAGE : 500µV max. LOW POWER CONSUMPTION SHORT CIRCUIT PROTECTION .. . LOW DISTORTION, LOW NOISE HIGH GAIN-BANDWIDTH PRODUCT HIGH CHANNEL SEPARATION Applies to : TS512I,AI ** Standard Linear Ics Macromodels, 1993. ** CONNECTIONS : * 1 INVERTING INPUT * 2 NON-INVERTING INPUT * 3 OUTPUT * 4 POSITIV E POWER SUPPLY * 5 NEGATIVE POWER SUPPLY .SUBCKT TS512 1 3 2 4 5 (analog) ********************************************************** .MODEL MDTH D IS=1E-8 KF=6.565195E-17 CJO=10F * INPUT STAGE CIP 2 5 1.000000E-12 CIN 1 5 1.000000E-12 EIP 10 5 2 5 1 EIN 16 5 1 5 1 RIP 10 11 2.600000E+01 RIN 15 16 2.600000E+01 RIS 11 15 1.061852E+02 DIP 11 12 MDTH 400E-12 DIN 15 14 MDTH 400E-12 VOFP 12 13 DC 0 VOFN 13 14 DC 0 IPOL 13 5 1.000000E-05 CPS 11 15 12.47E-10 DINN 17 13 MDTH 400E-12 VIN 17 5 1.500000e+00 DINR 15 18 MDTH 400E-12 VIP 4 18 1.500000E+00 FCP 4 5 VOFP 3.400000E+01 FCN 5 4 VOFN 3.400000E+01 FIBP 2 5 VOFN 1.000000E-02 4/7 FIBN 5 1 VOFP 1.000000E-02 * AMPLIFYING STAGE FIP 5 19 VOFP 9.000000E+02 FIN 5 19 VOFN 9.000000E+02 RG1 19 5 1.727221E+06 RG2 19 4 1.727221E+06 CC 19 5 6.000000E-09 DOPM 19 22 MDTH 400E-12 DONM 21 19 MDTH 400E-12 HOPM 22 28 VOUT 6.521739E+03 VIPM 28 4 1.500000E+02 HONM 21 27 VOUT 6.521739E+03 VINM 5 27 1.500000E+02 GCOMP 5 4 4 5 6.485084E-04 RPM1 5 80 1E+06 RPM2 4 80 1E+06 GAVPH 5 82 19 80 2.59E-03 RAVPHGH 82 4 771 RAVPHGB 82 5 771 RAVPHDH 82 83 1000 RAVPHDB 82 84 1000 CAVPHH 4 83 0.331E-09 CAVPHB 5 84 0.331E-09 EOUT 26 23 82 5 1 VOUT 23 5 0 ROUT 26 3 6.498455E+01 COUT 3 5 1.000000E-12 DOP 19 25 MDTH 400E-12 VOP 4 25 1.742230E+00 DON 24 19 MDTH 400E-12 VON 24 5 1.742230E+00 .ENDS TS512,A ELECTRICAL CHARACTERISTICS VCC = ±15V, Tamb = 25oC (unless otherwise specified) Symbol Conditions Vio Value Unit 0 mV Avd R L = 2kΩ 100 V/mV ICC No load, per operator 350 µA -13.5 to 13.5 V Vicm VOH R L = 2kΩ +13 V VOL R L = 2kΩ -13 V Isink VO = 0V 23 mA Isource VO = 0V 23 mA GBP R L = 2kΩ, C L = 100pF 3 MHz SR R L = 2kΩ 1.4 V/ms ∅m R L = 2kΩ, C L = 100pF 55 Degrees 5/7 TS512,A PACKAGE MECHANICAL DATA 8 PINS - PLASTIC DIP Dim. Millimeters Min. A a1 Typ. Max. Min. 3.32 Typ. Max. 0.131 0.51 0.020 B 1.15 1.65 0.045 0.065 b 0.356 0.55 0.014 0.022 b1 0.204 0.304 0.008 D E 0.012 10.92 7.95 9.75 0.430 0.313 0.384 e 2.54 0.100 e3 7.62 0.300 e4 7.62 0.300 F 6.6 0260 i 5.08 0.200 L Z 6/7 Inches 3.18 3.81 1.52 0.125 0.150 0.060 TS512,A PACKAGE MECHANICAL DATA 8 PINS - PLASTIC MICROPACKAGE (SO) Dim. A a1 a2 a3 b b1 C c1 D E e e3 F L M S Min. Millimeters Typ. 0.1 0.65 0.35 0.19 0.25 Max. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 Min. Inches Typ. 0.026 0.014 0.007 0.010 Max. 0.069 0.010 0.065 0.033 0.019 0.010 0.020 0.189 0.228 0.197 0.244 0.004 o 45 (typ.) 4.8 5.8 5.0 6.2 1.27 3.81 3.8 0.4 0.050 0.150 4.0 1.27 0.6 0.150 0.016 0.157 0.050 0.024 o 8 (max.) Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without noti ce. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1998 SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7