FAIRCHILD KSC5338F

KSC5338F
KSC5338F
High Voltage Power Switch Switching
Application
• High Speed Switching
• Wide SOA
TO-220F
1
1.Base
2.Collector
3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
1000
Units
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
450
V
9
IC
Collector Current (DC)
5
V
A
ICP
Collector Current (Pulse)
10
A
IB
Base Current (DC)
2
A
IBP
Base Current (Pulse)
4
A
PC
Collector Dissipation (TC=25°C)
40
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC = 1mA, IE = 0
Min.
1000
450
BVCEO
Collector-Emitter Breakdown Voltage
IC = 5mA, IB =0
BVEBO
Emitter-Base Breakdown Voltage
IC=1mA, IE=0
ICBO
Collector Cut-off Current
VCB = 800V, VBE = 0
IEBO
Emitter Cut-off Current
VEB = 9V, IC = 0
hFE1
hFE2
* DC Current Gain
VCE = 5V, IC = 0.5A
VCE = 1V, IC = 2A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 1A, IB = 0.1A
IC = 2A, IB = 0.4A
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1A, IB = 0.1A
IC = 2A, IB = 0.4A
Cob
Output Capacitance
VCB = 10V, f =1MHz
Cib
Input Capacitance
VEB=8V, IC=0, f =1MHz
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.1A
VCC = 125V, IC = 1A
IB1 = 0.2A, IB2 = -0.2A
RL=125Ω
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
Typ.
Max.
Units
V
V
9
V
15
6
10
µA
10
µA
30
0.55
0.8
0.5
V
V
1.1
1.25
V
V
70
pF
1000
pF
14
MHz
200
ns
2
µs
500
ns
* Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC5338F
Typical Characteristics
5
100
IB=900mA
V CE = 5V
3
IB = 800mA
IB = 700mA
IB = 600mA
IB = 500mA
IB = 400mA
IB = 300mA
2
IB = 100mA
4
IB = 200mA
1
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
IB = 1A
IB = 0
0
0
2
4
6
8
10
1
0.1
0.01
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
hFE, DC CURRENT GAIN
VCE = 1V
10
1
0.1
1
10
10
10
IC = 10IB
1
0.1
0.01
0.01
V BE(sat)
VCE(sat)
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collect-Emitter Saturation Voltage
10
10
1
tSTG, tF [µs], TIME
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Figure 1. Static Characteristic
0.1
0.01
0.1
IC[A], COLLECTOR CURRENT
V BE(sat)
VCE (sat)
0.1
tSTG
1
tF
0.01
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 5. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
©2000 Fairchild Semiconductor International
0.1
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 6. Switching Time
Rev. A, February 2000
KSC5338F
Typical Characteristics (Continued)
100
80
10
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
TJ=150℃
50υ s
DC
1ms
1
5ms
0.1
0.01
10
100
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Safe Operating Area
©2000 Fairchild Semiconductor International
1000
60
40
20
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 8. Power Derating
Rev. A, February 2000
KSC5338F
Package Demensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E