TXDV 412 ---> 812 ALTERNISTORS . . . FEATURES VERY HIGH COMMUTATION : > 42.5 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) dV/dt : 500 V/µs min A1 A2 DESCRIPTION The TXDV 412 ---> 812 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) G TO220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t dI/dt Tstg Tj Tl Symbol VDRM VRRM March 1995 Parameter Value Unit RMS on-state current (360° conduction angle) Tc = 90 °C 12 A Non repetitive surge peak on-state current ( Tj initial = 25°C ) tp = 2.5 ms 170 A tp = 8.3 ms 125 tp = 10 ms 120 I2t value tp = 10 ms 72 A2s Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Repetitive F = 50 Hz 20 A/µs Non Repetitive 100 Storage and operating junction temperature range - 40 to + 150 - 40 to + 125 °C °C 260 °C Maximum lead temperature for soldering during 10 s at 4.5 mm from case TXDV Parameter Repetitive peak off-state voltage Tj = 125 °C Unit 412 612 812 400 600 800 V 1/5 TXDV 412 ---> 812 THERMAL RESISTANCES Symbol Value Unit 60 °C/W Rth (j-c) DC Junction to case for DC 2.5 °C/W Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) 1.9 °C/W Rth (j-a) Parameter Junction to ambient GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant Unit IGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 100 mA VGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 1.5 V VGD VD=VDRM RL=3.3kΩ Tj=110°C I-II-III MIN 0.2 V tgt VD=VDRM IG = 500mA dIG/dt = 3A/µs Tj=25°C I-II-III TYP 2.5 µs IL IG=1.2 IGT Tj=25°C I-III TYP 100 mA II 200 IH * IT= 500mA gate open Tj=25°C MAX 100 mA VTM * ITM= 17A tp= 380µs Tj=25°C MAX 1.95 V VDRM Rated VRRM Rated Tj=25°C MAX 0.01 mA Tj=110°C MAX 2 Linear slope up to VD=67%VDRM gate open Tj=110°C MIN 500 V/µs (dV/dt)c = 200V/µs Tj=110°C MIN 10 A/ms IDRM IRRM dV/dt * (dI/dt)c * (dV/dt)c = 10V/µs * For either polarity of electrode A2 voltage with reference to electrode A1. 2/5 Value 42.5 TXDV 412 ---> 812 Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. P(W) 20 180 20 O 18 = 180 16 = 120 14 12 = 90 10 = 60 8 = 30 6 o Rth = 0 o C/W o 1 C/W o 2 C/W 4 o C/W 18 16 o 14 o -90 -95 -100 12 o -105 10 -110 8 o 6 4 -115 4 I T(RMS) (A) 2 0 0 Tcase (oC) P (W) 1 2 3 4 5 6 7 8 9 10 11 12 Fig.3 : RMS on-state current versus case temperature. I (A) T(RMS) 14 2 -120 o Tamb ( C) 0 0 20 40 60 80 100 120 -125 140 Fig.4 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 12 Zth(j-c) 10 8 6 0.1 Zth(j-a) o = 180 4 2 o Tcase( C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig.6 : Non Repetitive surge peak on-state current versus number of cycles. 3/5 375 TXDV 412 ---> 812 Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. Fig.9 : Safe operating area. 4/5 376 Fig.8 : On-state characteristics (maximum values). TXDV 412 ---> 812 PACKAGE MECHANICAL DATA TO220AB Plastic REF. H A J G I D B F O P L C M = N= A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.20 10.50 0.401 0.413 14.23 15.87 0.560 0.625 12.70 14.70 0.500 0.579 5.85 6.85 0.230 0.270 4.50 0.178 2.54 3.00 0.100 0.119 4.48 4.82 0.176 0.190 3.55 4.00 0.140 0.158 1.15 1.39 0.045 0.055 0.35 0.65 0.013 0.026 2.10 2.70 0.082 0.107 4.58 5.58 0.18 0.22 0.80 1.20 0.031 0.048 0.64 0.96 0.025 0.038 Cooling method : C Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 377