TN8, TS8 and TYNx08 Series ® 8A SCRs SENSITIVE & STANDARD MAIN FEATURES: A Symbol Value Unit IT(RMS) 8 A VDRM/VRRM 600 to 1000 V IGT 0.2 to 15 mA G K A A K A G DESCRIPTION K DPAK (TS8-B) (TN8-B) Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8A SCR series is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits... Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space area. A G IPAK (TS8-H) (TN8-H) A A K A K G A G TO-220AB (TYNx) TO-220AB (TS8-T) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) Parameter Value Unit RMS on-state current (180° conduction angle) Tc = 110°C 8 A Average on-state current (180° conduction angle) Tc = 110°C 5 A TS8/TN8 TYN 73 100 70 95 24.5 45 Non repetitive surge peak on-state current tp = 8.3 ms I²t Value for fusing tp = 10 ms Tj = 25°C dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C 5 V ITSM I ²t PG(AV) Tstg Tj VRGM tp = 10 ms Average gate power dissipation Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage (for TN8 & TYN only) April 2002 - Ed: 4A Tj = 25°C A A2S 1/9 TN8, TS8 and TYNx08 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ SENSITIVE Symbol IGT Test Conditions RL = 140 Ω VD = 12 V VGT Unit MAX. 200 µA MAX. 0.8 V MIN. 0.1 V MIN. 8 V VGD VD = VDRM VRG IRG = 10 µA IH IT = 50 mA RGK = 1 kΩ MAX. 5 mA IL IG = 1 mA RGK = 1 kΩ MAX. 6 mA Tj = 125°C MIN. 5 V/µs Tj = 25°C MAX. 1.6 V MAX. 0.85 V RL = 3.3 kΩ RGK = 220 Ω dV/dt VD = 65 % VDRM VTM ITM = 16 A Vt0 Threshold voltage Tj = 125°C Rd Dynamic resistance Tj = 125°C MAX. 46 mΩ Tj = 25°C MAX. 5 µA 1 mA IDRM IRRM ■ RGK = 220 Ω Tj = 125°C TS820 tp = 380 µs RGK = 220 Ω VDRM = VRRM Tj = 125°C STANDARD Symbol Test Conditions TN805 TN815 TYNx08 IGT RL = 33 Ω VD = 12 V VGT VGD VD = VDRM RL = 3.3 kΩ IH IT = 100 mA Gate open IL IG = 1.2 IGT Tj = 125°C MIN. 0.5 2 2 MAX. 5 15 15 Unit mA MAX. 1.3 V MIN. 0.2 V MAX. 25 40 30 mA MAX. 30 50 70 mA Tj = 125°C MIN. 50 150 150 V/µs Tj = 25°C MAX. 1.6 V dV/dt VD = 67 % VDRM VTM ITM = 16 A Vt0 Threshold voltage Tj = 125°C MAX. 0.85 V Rd Dynamic resistance Tj = 125°C MAX. 46 mΩ Tj = 25°C MAX. 5 µA 2 mA IDRM IRRM Gate open tp = 380 µs VDRM = VRRM Tj = 125°C THERMAL RESISTANCES Symbol Parameter Rth(j-c) Junction to case (DC) Rth(j-a) Junction to ambient (DC) S = 0.5 cm² S= copper surface under tab 2/9 /T Value Unit 20 °C/W TO-220AB 60 °C/W IPAK 100 DPAK 70 TN8, TS8 and TYNx08 Series PRODUCT SELECTOR Voltage (xxx) Part Number 600 V 700 V 800 V Sensitivity Package 1000 V TN805-xxxB X X 5 mA DPAK TN805-xxxH X X 5 mA IPAK TN815-xxxB X X 15 mA DPAK TN815-xxxH X X 15 mA IPAK TS820-xxxB X X 0.2 mA DPAK TS820-xxxH X X 0.2 mA IPAK TS820-xxxT X X 0.2 mA TO-220AB TYNx08 X 15 mA TO-220AB X X ORDERING INFORMATION TN 8 05 - 600 B (-TR) STANDARD SCR SERIES CURRENT: 8A SENSITIVITY: 05: 5mA 15: 15mA TS 8 20 - VOLTAGE: 600: 600V 800: 800V PACKAGE: B: DPAK H: IPAK 600 B (-TR) SENSITIVE SCR SERIES CURRENT: 8A SENSITIVITY: 20: 200µA TYN STANDARD SCR SERIES VOLTAGE: 6: 600V 8: 800V 10: 1000V 6 PACKING MODE: Blank: Tube -TR: DPAK Tape & Reel VOLTAGE: 600: 600V 700: 700V 08 PACKAGE: B: DPAK H: IPAK T: TO-220AB PACKING MODE: Blank: Tube -TR: DPAK Tape & Reel (RG) PACKING MODE Blank: Bulk RG: Tube CURRENT: 8A 3/9 TN8, TS8 and TYNx08 Series OTHER INFORMATION Part Number Marking Weight Base Quantity Packing mode TN805-x00B TN805x00 0.3 g 75 Tube TN805-x00B-TR TN805x00 0.3 g 2500 Tape & reel TN805-x00H TN805x00 0.4 g 75 Tube TN815-x00B TN815x00 0.3 g 75 Tube TN815-x00B-TR TN815x00 0.3 g 2500 Tape & reel TN815-x00H TN815x00 0.4 g 75 Tube TS820-x00B TS820x00 0.3 g 75 Tube TS820-x00B-TR TS820x00 0.3 g 2500 Tape & reel TS820-x00H TS820x00 0.4 g 75 Tube TS820-x00T TS820x00T 2.3 g 50 Tube TYNx08 TYNx08 2.3 g 250 Bulk TYNx08RG TYNx08 2.3 g 50 Tube Note: x = voltage Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2-1: Average and D.C. on-state current versus case temperature. IT(av)(A) P(W) 8 α = 180° 7 6 5 4 3 360° 2 1 0 IT(av)(A) 0 1 2 3 α 4 5 6 Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout) (DPAK). 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 4/9 α = 180° Tcase(°C) 0 25 50 75 100 125 Fig. 3-1: Relative variation of thermal impedance junction to case versus pulse duration. IT(av)(A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 DC K = [Zth(j-c)/Rth(j-c)] 1.0 DC 0.5 α =180° 0.2 Tamb(°C) 0 25 50 75 tp(s) 100 125 0.1 1E-3 1E-2 1E-1 1E+0 TN8, TS8 and TYNx08 Series Fig. 3-2: Relative variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, FR4 PC board for DPAK). IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C] K = [Zth(j-a)/Rth(j-a)] 1.00 DPAK 0.10 TO-220AB tp(s) 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 4-2: Relative variation of gate trigger current and holding current versus junction temperature for TN8 & TYN series. IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C] 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 Fig. 4-1: Relative variation of gate trigger current and holding current versus junction temperature for TS8 series. 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 IGT IH & IL Rgk = 1k Ω Tj(°C) -20 0 20 40 60 80 100 120 140 Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values) for TS8 series. IH[Rgk] / IH[Rgk = 1kΩ] IGT IH & IL Rgk(kΩ) Tj(°C) -20 0 20 40 60 80 100 120 140 Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values) for TS8 series. dV/dt[Rgk] / dV/dt [Rgk = 220Ω] Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values) for TS8 series. 15.0 dV/dt[Cgk] / dV/dt [Rgk = 220 Ω] VD = 0.67 x VDRM Tj = 125°C Rgk = 220 Ω 12.5 10.0 7.5 5.0 Rgk(kΩ) 2.5 Cgk(nF) 0.0 0 20 40 60 80 100 120 140 160 180 200 220 5/9 TN8, TS8 and TYNx08 Series Fig. 8: Surge peak on-state current versus number of cycles. TS8/TN8/TYN. Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of I²t. ITSM(A),I2t(A2s) ITSM(A) 100 90 80 TYN 70 Non repetitiv e Tj initial = 25 °C 60 50 TS8/TN8 40 30 Repetitive Tcase = 110 °C 20 10 Number of cycles 0 1 10 1000 Tj initial = 25°C tp = 10ms dI/dt limitattion One cycle TYN ITSM TS8/TN8 100 TYN I2t TS8/TN8 tp(ms) 100 1000 Fig. 10: On-state characteristics (maximum values). 10 0.01 0.10 1.00 10.00 Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm) (DPAK). Rth(j-a) ( °C/W) ITM(A) 100 50.0 Tj max.: Vto = 0.85V Rd = 46m Ω 80 10.0 Tj = Tj max. 60 40 Tj = 25°C 1.0 20 S(cm 2) VTM(V) 0.1 0.0 6/9 0.5 1.0 1.5 2.0 0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 12 14 16 18 20 TN8, TS8 and TYNx08 Series PACKAGE MECHANICAL DATA DPAK (Plastic) DIMENSIONS REF. Millimeters Min. R R A A1 A2 B B2 C C2 D E G H L2 L4 R V2 Max 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.80 typ. 0.60 1.00 0.2 typ. 0° 8° Inches Min. Max. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.018 0.023 0.236 0.244 0.251 0.259 0.173 0.181 0.368 0.397 0.031 typ. 0.023 0.039 0.007 typ. 0° 8° FOOTPRINT DIMENSIONS (in millimeters) DPAK (Plastic) 6.7 6.7 3 3 1.6 1.6 2.3 2.3 7/9 TN8, TS8 and TYNx08 Series PACKAGE MECHANICAL DATA IPAK (Plastic) DIMENSIONS REF. Millimeters Min. A E C2 B2 L2 D H L L1 B3 B6 A1 B V1 B5 C G A3 A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1 Typ. 2.2 0.9 0.7 0.64 5.2 Inches Max. Min. 2.4 1.1 1.3 0.9 5.4 0.85 0.086 0.035 0.027 0.025 0.204 0.3 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 10° Typ. Max. 0.094 0.043 0.051 0.035 0.212 0.033 0.035 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.031 0.039 10° TO-220AB (Plastic - with notches) DIMENSIONS REF. A H2 Dia Min. C L5 L7 L6 L2 F2 F1 D L9 L4 F M G1 E G 8/9 Millimeters A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 TN8, TS8 and TYNx08 Series PACKAGE MECHANICAL DATA TO-220AB (Without notches) DIMENSIONS B REF. C Millimeters Inches b2 Min. L F I A l4 c2 a1 l3 l2 a2 b1 M c1 e A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M Typ. 15.20 Max. Min. Typ. 15.90 0.598 3.75 Max. 0.625 0.147 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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