TYN210 ---> TYN1010 ® SCR A FEATURES High surge capability High on-state current High stability and reliability ■ G ■ K ■ DESCRIPTION The TYN210 ---> TYN1010 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. K A G TO-220AB ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit RMS on-state current (180° conduction angle) Tc = 100°C 10 A IT(AV) Average on-state current (180° conduction angle, single phase circuit) Tc = 100°C 6.4 A ITSM Non repetitive surge peak on-state current (Tj initial = 25°C) tp = 8.3ms 105 A tp = 10ms 100 I2t value tp = 10ms 50 A2s 50 A/µs -40 to +150 -40 to +125 °C 260 °C IT(RMS) I2t dI/dt Critical rate of rise of on-state current Gate supply: IG = 100mA dIG/dt = 1A/µs Tstg Tj Storage and operating junction temperature range Tl Maximum lead soldering temperature during 10s at 4.5mm from case TYN Symbol VDRM VRRM Parameter Repetitive peak off-state voltage Tj = 125°C September 2001 - Ed: 1A Unit 210 410 610 810 1010 200 400 600 800 1000 V 1/4 TYN210 ---> TYN1010 THERMAL RESISTANCE Symbol Parameter Rth (j-a) Rth (j-c) DC Value Unit Junction to ambient 60 °C/W Junction to case for DC 2.5 °C/W GATE CHARACTERISTICS (maximum values) PG(AV) = 1W PGM = 10W (tp = 20µs) IFGM = 4A (tp = 20µs) VRGM = 5V ELECTRICAL CHARACTERISTICS Symbol Test conditions Value Unit IGT VD = 12V (DC) RL = 33Ω Tj = 25°C MAX. 15 mA VGT VD = 12V (DC) RL = 33Ω Tj = 25°C MAX. 1.5 V VGD VD = VDRM RL = 3.3kΩ Tj =110°C MIN. 0.2 V tgt VD = VDRM IG = 40mA dIG/dt = 0.5A/µs Tj = 25°C TYP. 2 µs IL IG = 1.2IGT Tj = 25°C TYP. 50 mA IH IT = 100mA Gate open Tj = 25°C MAX. 30 mA VTM ITM = 20A Tj = 25°C MAX. 1.6 V IDRM IRRM VDRM rated VRRM rated Tj = 25°C MAX. 0.01 mA Tj = 110°C MAX. 2 Linear slope up to VD = 67% VDRM gate open Tj = 110°C MIN. 200 V/µs VD=67%VDRM ITM= 20A VR= 25V dITM/dt=30 A/µs dVD/dt= 50V/µs Tj = 110°C TYP. 70 µs dV/dt tq tp = 380µs Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) Tcase (o C) P (W) 12 360 12 O 10 Rth = 0 o C/W 2 o C/W 4 o C/W 6 o C/W 10 DC 8 o 6 = 120 4 = 90 = 60 = 180 o 2/4 2 3 4 -115 4 6 7 8 -120 2 IT(AV)(A) 5 o o = 30 o 1 -110 6 o 2 0 0 -105 8 = 180 -100 o Tamb ( C) 9 0 0 20 40 60 80 100 120 -125 140 TYN210 ---> TYN1010 Fig. 3: Average on-state current versus case temperature. I T(AV) (A) Fig. 4: Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 12 DC 10 Zth(j-c) 8 6 0.1 o Zth(j-a) = 180 4 2 o tp(s) Tcase ( C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of gate trigger current versus junction temperature. Fig. 6: Non repetitive surge peak on-state current versus number of cycles. Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: t ≤ 10ms, and corresponding value of I2t. Fig. 8: On-state characteristics (maximum values). 3/4 TYN210 ---> TYN1010 PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS REF. B Millimeters Min. Typ. Max. Min. Typ. Max. C b2 A 15.20 a1 L F I A l4 c2 a1 Inches 15.90 0.598 3.75 0.625 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 I 3.75 3.85 0.147 0.151 I4 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 l3 l2 a2 b1 M c1 e M 1.70 0.044 2.60 0.066 0.102 OTHER INFORMATION ■ ■ ■ ■ Ordering type Marking Package Weight Base qty Delivery mode TYNxx10 TYNxx10 TO-220AB 2.3 g 250 Bulk Epoxy meets UL94,V0 Cooling method: C Recommended torque value: 0.8 m.N. Maximum torque value: 1 m.N. 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