TYN 682 ---> TYN 692 SCR .. . FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY DESCRIPTION The TYN 682 ---> TYN 692 Family Silicon Controlled Rectifiers are high performance glass passivated chips technology. This general purpose Family Silicon Controlled Rectifiers is designed for power supply up to 400Hz on resistive or inductive load. K A G TO220AB (Plastic) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit RMS on-state current (180° conduction angle) Tc = 105 °C 20 A IT(AV) Average on-state current (180° conduction angle, single phase circuit) Tc = 105 °C 13 A ITSM Non repetitive surge peak on-state current ( Tj initial = 25°C ) tp = 8.3 ms 260 A tp = 10 ms 250 tp = 10 ms 310 A2s 100 A/µs - 40 to + 150 - 40 to + 125 °C °C 260 °C IT(RMS) I2t I2t value dI/dt Critical rate of rise of on-state current Gate supply : IG = 100 mA diG/dt = 1 A/µs Tstg Tj Storage and operating junction temperature range Tl Symbol VDRM VRRM March 1995 Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter Repetitive peak off-state voltage Tj = 125 °C TYN Unit 682 683 685 688 690 692 50 100 200 400 600 800 V 1/4 TYN 682 ---> TYN 692 THERMAL RESISTANCES Symbol Rth (j-a) Parameter Junction to ambient Rth (j-c) DC Junction to case for DC Value Unit 60 °C/W 1.3 °C/W Value Unit GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IFGM = 4A (tp = 20 µs) VRGM = 5 V. ELECTRICAL CHARACTERISTICS Symbol IGT VD=12V (DC) RL =33Ω Tj=25°C MAX 25 mA VGT VD=12V (DC) RL =33Ω Tj=25°C MAX 1.5 V VGD VD=VDRM R L=3.3kΩ Tj= 125°C MIN 0.2 V tgt VD=VDRM IG = 200mA dIG/dt = 1.5A/µs Tj=25°C TYP 2 µs IL IG= 1.2 IGT Tj=25°C TYP 70 mA IH IT= 100mA Tj=25°C MAX 40 mA gate open VTM ITM= 50A tp= 380µs Tj=25°C MAX 1.4 V IDRM IRRM VDRM VRRM Tj=25°C MAX 0.01 mA dV/dt Linear slope up to VD =67%VDRM gate open Tj= 125°C MIN 500 V/µs VD=67%VDRM ITM= 50A VR= 25V dITM/dt=30 A/µs dVD /dt= 50V/µs Tj= 125°C TYP 70 µs tq 2/4 Test Conditions Rated Rated Tj= 125°C 2 TYN 682 ---> TYN 692 Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact. Fig.3 : Average temperature. Fig.4 : Relative variation of thermal impedance versus pulse duration. on-state current versus case Zth/Rth 1 Zt h( j-c) 0.1 Zt h( j-a) tp (s) 0.01 1E-3 Fig.5 : Relative variation of gate trigger current versus junction temperature. 1E-2 1E-1 1E +0 1 E +1 1E +2 5 E+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. 3/4 TYN 682 ---> TYN 692 Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10 ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). PACKAGE MECHANICAL DATA TO220AB Plastic REF. A H G I J D B F O P L C M = N= Cooling method : C Marking : type number Weight : 2.3 g A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.00 10.40 0.393 0.409 15.20 15.90 0.598 0.625 13.00 14.00 0.511 0.551 6.20 6.60 0.244 0.259 3.50 4.20 0.137 0.165 2.65 2.95 0.104 0.116 4.40 4.60 0.173 0.181 3.75 3.85 0.147 0.151 1.23 1.32 0.048 0.051 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 4.80 5.40 0.188 0.212 1.14 1.70 0.044 0.066 0.61 0.88 0.024 0.034 Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4