TYNx40 Series ® 40A SCRs STANDARD MAIN FEATURES: A Symbol Value Unit IT(RMS) 40 A VDRM/VRRM 600 to 1000 V IGT 35 mA G K A DESCRIPTION K The TYNx40 series is suitable for applications where in-rush current conditions are critical, such as overvoltage crowbar protection circuits in power supplies, in-rush current limiting circuits, solid state relays (in back to back configuration), welding equipment, high power motor control circuits. Using clip assembly technology, they provide a superior performance in high surge current capabilites. A G TO-220AB (TYNx40) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit RMS on-state current (180° conduction angle) Tc = 95°C 40 A IT(AV) Average on-state current (180° conduction angle) Tc = 95°C 25 A ITSM Non repetitive surge peak on-state current Tj = 25°C IT(RMS) I ²t tp = 8.3 ms tp = 10 ms I²t Value for fusing 480 A 460 Tj = 25°C 1060 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W PG(AV) Average gate power dissipation Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C VRGM Maximum peak reverse gate voltage 5 V April 2002 - Ed: 4A 1/4 TYNx40 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Test Conditions Value IGT MIN. 3.5 MAX. 35 MAX. 1.3 V MIN. 0.2 V MAX. 75 mA MAX. 150 mA Tj = 125°C MIN. 1000 V/µs Tj = 25°C MAX. 1.6 V MAX. 0.85 V RL = 33 Ω VD = 12 V VGT VGD VD = VDRM RL = 3.3 kΩ IH IT = 500 mA Gate open IL IG = 1.2 IGT Tj = 125°C mA dV/dt VD = 67 % VDRM VTM ITM = 80 A Vt0 Threshold voltage Tj = 125°C Rd Dynamic resistance Tj = 125°C MAX. 10 mΩ Tj = 25°C MAX. 5 µA 4 mA IDRM IRRM Gate open Unit tp = 380 µs VDRM = VRRM Tj = 125°C THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) Junction to case (DC) 0.8 °C/W Rth(j-a) Junction to ambient (DC) 60 °C/W PRODUCT SELECTOR Voltage Part Number TYNx40 600 V 800 V 1000 V X X X Sensitivity Package 35 mA TO-220AB ORDERING INFORMATION TYN STANDARD SCR SERIES 6 40 (RG) PACKING MODE Blank: Bulk RG: Tube VOLTAGE: 6: 600V 8: 800V 10: 1000V CURRENT: 40A OTHER INFORMATION Part Number Marking Weight Base Quantity Packing mode TYNx40 TYNx40 2.3 g 250 Bulk TYNx40RG TYNx40 2.3 g 50 Tube Note: x = voltage 2/4 TYNx40 Series Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2: Average and DC on-state current versus case temperature. IT(av)(A) P(W) 50 40 α = 180° 35 D.C. 40 30 25 30 α = 180° 20 20 15 360° 10 10 5 0 α IT(av)(A) 0 5 10 15 20 Tcase(°C) 25 30 Fig. 3: Relative variation of thermal impedance versus pulse duration. 0 0 25 50 75 100 125 Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature. IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25°C] K = [Zth/Rth] 2.5 1.00 2.0 Zth(j-c) IGT 1.5 0.10 Zth(j-a) IH & IL 1.0 0.5 tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 Tj(°C) 1E+1 1E+2 5E+2 Fig. 5: Surge peak on-state current versus number of cycles. 0.0 -40 0 20 40 60 80 100 120 140 Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t. ITSM(A),I 2t(A2s) ITSM(A) 500 450 400 350 300 250 200 150 100 50 0 -20 5000 Tj initial = 25 °C tp = 10ms ITSM One cycle Non repetitive Tj initial = 25 °C I2t 1000 dI/dt limitattion Repetitive Tcase = 95 °C Number of cycles 1 10 100 tp(ms) 1000 100 0.01 0.10 1.00 10.00 3/4 TYNx40 Series Fig. 7: values). On-state characteristics (maximum ITM(A) 500 Tj max.: Vto = 0.85V Rd = 10m Ω 100 Tj = Tj max. 10 Tj = 25°C 1 0.0 VTM(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS B REF. C b2 Millimeters Min. L F I A l4 c2 a1 l3 l2 a2 b1 M c1 e A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M Typ. 15.20 Max. Inches Min. Typ. 15.90 0.598 3.75 Max. 0.625 0.147 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4