MJE13009F MJE13009F High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 700 Units V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 12 A ICP Collector Current (Pulse) 24 A IB Base Current 6 A PC Collector Dissipation (TC=25°C) 50 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage Test Condition IC = 10mA, IB = 0 Min. 400 Typ. Max. Units V 1 mA IEBO Emitter Cut-off Current VEB = 7V, IC = 0 hFE DC Current Gain VCE = 5V, IC = 5A VCE = 5V, IC = 8A VCE(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 1A IC = 8A, IB = 1.6A IC = 12A, IB = 3A 1 1.5 3 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 5A, IB = 1A IC = 8A, IB = 1.6A 1.2 1.6 V V Cob Output Capacitance VCB = 10V , f = 0.1MHz fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A VCC =125V, IC = 8A IB1 = - IB2 = 1.6A RL = 15,6Ω tON Turn ON Time tSTG Storage Time tF Fall Time 8 6 40 30 180 pF 4 MHz 1.1 µs 3 µs 0.7 µs * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 MJE13009F VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 100 hFE, DC CURRENT GAIN VCE = 5V 10 1 0.1 1 10 100 10 IC = 3 IB V BE(sat) 1 0.1 VCE (sat) 0.01 0.1 IC[A], COLLECTOR CURRENT 1 10 100 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10000 1000 tR, tD [µ s], TURN ON TIME Cob[pF], CAPACITANCE VCC =125V IC =5IB 100 10 1 0.1 1 10 100 1000 tR tD, V BE(off)=5V 100 10 0.1 1000 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector Output Capacitance 10 100 Figure 4. Turn On Time 100 10000 s 1m s 1000 10 0µ tSTG 10 IC[A], COLLECTOR CURRENT VCC =125V IC=5IB DC tSTG, tF [µs], TURN OFF TIME 1 IC[A], COLLECTOR CURRENT 1 0.1 tF 0.01 100 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 5. Turn Off Time ©2001 Fairchild Semiconductor Corporation 100 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A1, February 2001 MJE13009F Typical Characteristics (Continued) 70 PC[W], POWER DISSIPATION 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 o Tc[ C], CASE TEMPERATURE Figure 1. DC current Gain ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 MJE13009F Package Demensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ LILENT SWITCHER® SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ VCX™ UHC™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. G