FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage load switch when switching outputs on or off for power management.The part may also be used in conjunction with DC-DC converters requiring P-Channel. • -16 A, -20 V. RDS(on) = 0.08 Ω @ VGS = -4.5 V RDS(on) = 0.11 Ω @ VGS = -2.5 V. • Critical DC electrical parameters specified at elevated temperature. • High density cell design for extremely low RDS(on). • TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. • 175°C maximum junction temperature rating. S G D Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted FDP4020P Parameter FDB4020P Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±8 V ID Drain Current - Continuous -16 A - Pulsed -48 PD Total Power Dissipation @ TC = 25°C TJ, TSTG Derate above 25 °C Operating and Storage Junction Temperature Range 37.5 W 0.25 -65 to +175 W/°C °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient 4 (Note 1) 62.5 40 °C/W °C/W Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDP4020P FDP4020P 13’’ 12mm 2500 units 1999 Fairchild Semiconductor Corporation FDP4020P Rev. A FDP4020P February 1999 PRELIMINARY Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown VGS = 0 V, ID = -250 µA Voltage Breakdown Voltage ID = -250 µA, Referenced to 25°C Temperature Coefficient Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse On Characteristics -20 V mV/°C -28 VGS = 8 V, VDS = 0 V 100 µA nA VGS = -8 V, VDS = 0 V -100 nA -1 (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = -250 µA, Referenced to 25°C ID(on) On-State Drain Current VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -8 A 14 VDS = -10 V, VGS = 0 V, f = 1.0 MHz 665 pF 270 pF 70 pF -0.4 -0.58 -1 0.068 0.098 0.096 VGS = -4.5 V,ID = -8 A, VGS = -4.5 V,ID = -8 A,TJ=125°C VGS = -2.5 V,ID = -7 A V mV/°C 2 0.08 0.13 0.110 -20 Ω A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) (Note 2) VDD = -5 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω 8 16 ns 24 38 ns Turn-Off Delay Time 50 80 ns tf Turn-Off Fall Time 29 45 ns Qg Total Gate Charge 9.5 13 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -5 V, ID = -16 A, VGS = -4.5 V 1.3 nC 2.2 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current (Note 2) -16 ISM Maximum Pulsed Drain-Source Diode Forward Current (Note 2) -48 VSD Drain-Source Diode Forward Voltage (Note 2) -1.2 VGS = 0 V, IS = -16 A A V Notes: 1. RθJA is the sum of the juntion-to-case and case-to-ambient thermal resistance.For T0-263 the device is mounted on circuit board with a 1in2 pad of 2 oz. copper. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDP4020P Rev. A FDP4020P Electrical Characteristics FDP4020P Typical Characteristics 40 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -4.5V -4.0V 32 -3.5V -3.0V 24 16 -2.5V 8 -2.0V 0 1.8 VGS = -2.0V 1.6 -2.5V 1.4 -3.0V 1.2 -3.5V -4.0V 0.8 0 2 4 6 8 10 0 5 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 20 25 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.2 1.8 ID = -16A VGS = -4.5V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 15 -ID, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 ID = -8A 0.16 0.12 o TA = 125 C 0.08 o TA = 25 C 0.04 0 0.6 -50 -25 0 25 50 75 100 125 150 1.5 175 2 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 100 TA = -55 C -IS, REVERSE DRAIN CURRENT (A) o VDS = -5V -ID, DRAIN CURRENT (A) -4.5V 1 o 25 C o 16 125 C 12 8 4 VGS = 0V 1 o TA = 125 C o 25 C o -55 C 0.01 0.0001 0 0 0.5 1 1.5 2 2.5 3 3.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.4 0.8 1.2 1.6 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP4020P Rev. A (continued) 5 -VGS, GATE-SOURCE VOLTAGE (V) 1400 VDS = -5V ID = -16A FDP4020P Typical Characteristics f = 1 MHz VGS = 0 V 1200 -10V 4 CAPACITANCE (pF) -15V 3 2 1000 800 CISS 600 400 1 COSS 200 0 CRSS 0 0 3 6 9 12 0 4 Qg, GATE CHARGE (nC) 12 16 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. 100 1000 RDS(ON) LIMIT SINGLE PULSE 100µs o RθJC = 4 C/W 800 o 1ms 10 TA = 25 C 10ms DC 100ms 1 POWER (W) -ID, DRAIN CURRENT (A) 8 VGS = -4.5V SINGLE PULSE o 600 400 200 RθJC = 4 C/W o TA = 25 C 0.1 0 1 10 100 0.0001 -VDS, DRAIN-SOURCE VOLTAGE (V) 0.001 0.01 0.1 1 10 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 R θJC (t) = r(t) * R θJC R θJC = 4°C/W 0.1 0.2 0.2 P(pk) 0.05 t1 Single Pulse 0.1 0.05 0.0001 t2 TJ - TA = P * R θJC (t) Duty Cycle, D = t 1 / t 2 0.001 0.01 0.1 1 10 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient themal response will change depending on the circuit board design. FDP4020P Rev. A TO-220 Tape and Reel Data and Package Dimensions TO-220 Tube Packing Configuration: Figur e 1.0 Packaging Description: TO-220 parts are ship ped normally in tube. The tube is made of PVC plastic treated with anti -stati c agent.These tubes in standard option are placed inside a dissipative plastic bag, barcode labeled, and placed inside a box made of recyclable corrugated pa per. One box contains two ba gs maximum (see fig. 1.0). And one or several o f these boxes are placed inside a labeled shipp ing bo x whic h c omes in different sizes dependi ng on the nu mber of parts ship ped. The other option comes in bulk as described in the Packagin g Information table. The unit s in this option are placed inside a small box laid w ith antistatic bubble sheet. These smaller boxes are individually labeled and placed ins ide a larger box (see fig. 3.0). These larger or intermediate boxes then will b e placed finally inside a labeled shipping box whic h still comes in different sizes depending on the number of units shipped. 45 unit s per Tube 12 Tubes per Bag 530mm x 130mm x 83mm Intermediate box 2 bag s per Box Conduct ive Plasti c B ag TO-220 Packaging Information: Figure 2.0 FSCINT Labe l samp le FAIRCHILD SEMICONDUCTOR CORPORATION TO-220 Packaging Information Packaging Option Packaging type Qty per Tube/Box NSID: Standard CBVK741B019 QTY: FDP7060 HTB:B 1080 SPEC: S62Z (no f l ow code ) Rail/Tube BULK 45 300 D/C1: D9842 SPEC REV: B2 QA REV: 530x130x83 114x102x51 Max qty per Box 1,080 1,500 Weight per unit (gm) 1.4378 1.4378 Box Dimension (mm) LOT: 1080 uni ts maxi mum quant it y per bo x FSCINT Label (FSCINT) Note/Comments TO-220 bulk Packing Configuration: Figure 3.0 An ti-stati c Bubbl e Sheet s FSCINT Label 530mm x 130mm x 83mm Intermediate box 1500 uni ts maxi mum quant it y per intermediate box 300 units per EO70 box 5 EO70 boxe s per per Interm ediate Bo x 114mm x 102mm x 51mm EO70 Immed iate Box FSCINT Label TO-220 Tube Configuration: Figure 4.0 0.123 +0.001 -0.003 0.165 0.080 Note: All dim ensions are in inches F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L F 9852 NDP4060L 0.275 0.450 ±.030 F 9852 NDP4060L 1.300 ±.015 0.032 ±.003 20.000 +0.031 -0.065 0.160 0.800 0.275 August 1999, Rev. B TO-220 Tape and Reel Data and Package Dimensions, continued TO-220 (FS PKG Code 37) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 1.4378 September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.