VN02N HIGH SIDE SMART POWER SOLID STATE RELAY TYPE VN02N ■ ■ ■ ■ ■ ■ V DSS R DS( on) I OUT VC C 60 V 0.4 Ω 6A 26 V OUTPUT CURRENT (CONTINUOUS): 6A @ Tc=25 oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN OPEN DRAIN DIAGNOSTIC OUTPUT VERY LOW STAND-BY POWER DISSIPATION DESCRIPTION The VN02N is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level compatible. The open drain diagnostic output indicates open circuit (no load) and over temperature status. PENTAWATT (vertical) PENTAWATT (horizontal) PENTAWATT (in-line) ORDER CODES: PENTAWATT vertical VN02N PENTAWATT horizontal VN02N (011Y) PENTAWATT in-line VN02N (012Y) BLOCK DIAGRAM September 1994 1/11 VN02N ABSOLUTE MAXIMUM RATING Symbol V( BR)DSS Parameter Drain-Source Breakdown Voltage Unit 60 V Output Current (cont.) 6 A IR Reverse Output Current -6 A II N Input Current ±10 mA -4 V ±10 mA 2000 V IO UT -V CC Reverse Supply Voltage ISTA T Status Current VE SD Electrostatic Discharge (1.5 kΩ, 100 pF) P tot Tj T stg o Power Dissipation at T c ≤ 25 C Junction Operating Temperature Storage Temperature CONNECTION DIAGRAM CURRENT AND VOLTAGE CONVENTIONS 2/11 Value 29 W -40 to 150 o C -55 to 150 o C VN02N THERMAL DATA R thj-cas e Rthj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 4.35 60 o C/W C/W ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified) POWER Symbol Parameter VC C Supply Voltage R on On State Resistance IS Supply Current Test Conditions Min. Typ. 7 I OU T = 3 A I OU T = 3 A T j = 25 o C T j ≥ 25 oC Off State On State Max. Unit 26 V 0.8 0.4 Ω Ω 50 15 µA mA Max. Unit SWITCHING Symbol Parameter Test Conditions Min. Typ. Turn-on Delay Time Of I OU T = 3 A Resistive Load Output Current Input Rise Time < 0.1 µs T j = 25 o C 10 µs Rise Time Of Output Current I OU T = 3 A Resistive Load Input Rise Time < 0.1 µs T j = 25 o C 15 µs Turn-off Delay Time Of I OU T = 3 A Resistive Load Output Current Input Rise Time < 0.1 µs T j = 25 o C 15 µs Fall Time Of Output Current I OU T = 3 A Resistive Load Input Rise Time < 0.1 µs T j = 25 o C 6 µs (di/dt) on Turn-on Current Slope I OU T = 3 A I OU T = I OV 0.5 2 A/µs A/µs (di/dt) off Turn-off Current Slope I OU T = 3 A I OU T = I OV 2 4 A/µs A/µs Max. Unit 0.8 V (*) V t d(on) tr t d(off ) tf LOGIC INPUT Symbol Parameter V IL Input Low Level Voltage V IH Input High Level Voltage V I(hy st.) Input Hysteresis Voltage II N V ICL Test Conditions Min. Typ. 2 0.5 Input Current V IN = 5 V 250 Input Clamp Voltage I IN = 10 mA I IN = -10 mA 6 -0.7 V 500 µA V V PROTECTIONS AND DIAGNOSTICS Symbol Parameter V STAT (•) Status Voltage Output Low V US D Under Voltage Shut Down Test Conditions Min. Typ. I STAT = 1.6 mA 6.5 Max. Unit 0.4 V V 3/11 VN02N ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS (continued) Symbol Parameter Test Conditions Min. Typ. Max. 6 -0.7 Unit V V V S CL (•) Status Clamp Voltage I STAT = 10 mA I STAT = -10 mA tS C Switch-off Time in Short Circuit Condition at Start-Up R LOA D < 10 mΩ Tc = 25 o C I OV Over Current R LOA D < 10 mΩ -40 ≤ T c ≤ 125 o C I AV Average Current in Short Circuit R LOA D < 10 mΩ Tc = 85 o C I OL Open Load Current Level 5 TTS D Thermal Shut-down Temperature 140 o C TR Reset Temperature 125 o C 1.5 5 ms 28 A 0.9 A 70 mA (*) The V IH is internally cl amped at 6V about. It is possibl e to connect this pin to an higher voltage via an external resi stor cal culated to not exceed 10 mA at the i nput pin. (•) Status determination > 100 µs after the switching edge. FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic. To protect the device against short circuit and over-current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to about 125 oC the switch is automatically turned on again. In short circuit conditions the protection reacts with virtually no delay, the sensor being located in the region of the die where the heat is generated. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3). 4/11 The consequences of the voltage drop across this diode are as follows: – If the input is pulled to power GND, a negative voltage of -VF is seen by the device. (VIL, VIH thresholds and VSTAT are increased by VF with respect to power GND). – The undervoltage shutdown level is increased by VF . If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in fig. 4), which becomes the common signal GND for the whole control board. In this way no shift of VIH, V IL and VSTAT takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment. VN02N TRUTH TABLE INPUT OUTPUT DIAGNOSTIC Normal Operation L H L H H H Open Circuit (No Load) H H L Over-temperature H L L Under-voltage X L H Figure 1: Waveforms Figure 2: Over Current Test Circuit 5/11 VN02N Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 4: Typical Application Circuit With Separate Signal Ground 6/11 VN02N RDS(on) vs Junction Temperature RDS(on) vs Supply Voltage RDS(on) vs Output Current Input voltages vs Junction Temperature Output Current Derating Open Load vs Junction Temperature 7/11 VN02N Pentawatt (vertical) MECHANICAL DATA DIM. mm TYP. MIN. A C D D1 E F F1 G G1 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia 2.4 1.2 0.35 0.8 1 3.2 6.6 MAX. 4.8 1.37 2.8 1.35 0.55 1.05 1.4 3.6 7 10.4 10.4 3.4 6.8 10.05 MIN. inch TYP. 0.094 0.047 0.014 0.031 0.039 0.126 0.260 0.134 0.268 MAX. 0.189 0.054 0.110 0.053 0.022 0.041 0.055 0.142 0.276 0.409 0.409 0.396 17.85 15.75 21.4 22.5 0.703 0.620 0.843 0.886 2.6 15.1 6 3 15.8 6.6 0.102 0.594 0.236 0.118 0.622 0.260 4.5 4 0.177 0.157 3.65 3.85 0.144 0.152 E L D1 C D M A M1 L1 L2 G G1 L3 H3 L5 F1 H2 L7 L6 8/11 F Dia. P010E VN02N Pentawatt (horizontal) MECHANICAL DATA DIM. mm MIN. TYP. A inch MAX. MIN. TYP. 4.8 C MAX. 0.189 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 G 3.2 3.4 3.6 0.126 0.134 0.142 G1 6.6 6.8 7 0.260 0.268 0.276 H2 10.4 0.055 0.409 H3 10.05 10.4 0.396 0.409 L 14.2 15 0.559 0.590 L1 5.7 6.2 0244 L2 14.6 15.2 0.598 L3 3.5 4.1 0.137 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 0.161 L7 6 6.6 0.236 0.260 Dia 3.65 3.85 0.144 0.152 P010F 9/11 VN02N Pentawatt (In- Line) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 G 3.2 3.4 3.6 0.126 0.134 0.142 G1 6.6 6.8 7 0.260 0.268 0.276 H2 0.055 10.4 0.409 H3 10.05 10.4 0.396 L2 23.05 23.4 23.8 0.907 0.921 0.937 0.409 L3 25.3 25.65 26.1 0.996 1.010 1.028 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 Dia 3.65 3.85 0.144 0.152 P010D 10/11 VN02N Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 11/11