STMICROELECTRONICS VN16B

VN16B
ISO HIGH SIDE SMART POWER SOLID STATE RELAY
PRELIMINARY DATA
TYPE
VN16B
■
■
■
■
■
■
■
V DSS
R DS( on)
I n (*)
VC C
40 V
0.06 Ω
5.6 A
26 V
MAXIMUM CONTINUOUS OUTPUT
CURRENT (#): 20 A @ Tc= 85oC
5V LOGIC LEVEL COMPATIBLE INPUT
THERMAL SHUT-DOWN
UNDER VOLTAGE PROTECTION
OPEN DRAIN DIAGNOSTIC OUTPUT
INDUCTIVE LOAD FAST DEMAGNETIZATION
VERY LOW STAND-BY POWER DISSIPATION
DESCRIPTION
The VN16B is a monolithic device made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The open drain diagnostic output indicates: open
load in off state and in on state, output shorted to
VCC and overtemperature. Fast demagnetization
of inductive loads is archieved by negative (-18V)
load voltage at turn-off.
PENTAWATT
(vertical)
PENTAWATT
(horizontal)
PENTAWATT
(in-line)
ORDER CODES:
PENTAWATT vertical
VN16B
PENTAWATT horizontal VN16B (011Y)
PENTAWATT in-line
VN16B (012Y)
BLOCK DIAGRAM
(*) In= Nominal current according to ISO definition for hi gh side automotive switch (see note 1)
(#) T he maximum continuous output current is the current at T c = 85 o C for a battery voltage of 13 V which does not activate
sel f protection
September 1994
1/11
VN16B
ABSOLUTE MAXIMUM RATING
Symbol
V( BR)DSS
Parameter
Drain-Source Breakdown Voltage
Value
Unit
40
V
o
20
A
I OU T(RMS) RMS Output Current at T c = 85 o C
20
A
IO UT
Output Current (cont.) at T c = 85 C
IR
Reverse Output Current at T c = 85 o C (f > 1Hz)
-20
A
II N
Input Current
±10
mA
-V CC
Reverse Supply Voltage
ISTA T
Status Current
VE SD
Electrostatic Discharge (1.5 kΩ, 100 pF)
P tot
Tj
T stg
o
Power Dissipation at T c = 25 C
V
mA
2000
V
82
W
Junction Operating Temperature
-40 to 150
o
Storage Temperature
-55 to 150
o
CONNECTION DIAGRAM
CURRENT AND VOLTAGE CONVENTIONS
2/11
-4
±10
C
C
VN16B
THERMAL DATA
R thj-cas e
Rthj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
1.5
60
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (8 < VCC < 16 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified)
POWER
Symbol
VC C
In(*)
R on
IS
Parameter
Test Conditions
Supply Voltage
Nominal Current
T c = 85 C V DS( on) ≤ 0.5 V CC = 13 V
o
o
On State Resistance
I OU T = In V CC = 13 V
Tj = 25 C
Supply Current
Off State
T j ≥ 25 oC
V CC = 13 V
Typ.
Max.
Unit
6
13
26
V
5.6
8.8
A
0.038
0.06
Ω
50
µA
25
o
1.8
V
5
10
20
KΩ
Min.
Typ.
Max.
Unit
Turn-on Delay Time Of R load = 1.6 Ω
Output Current
5
50
500
µs
R load = 1.6 Ω
40
100
680
µs
Turn-off Delay Time Of R load = 1.6 Ω
Output Current
10
100
500
µs
Fall Time Of Output
Current
R load = 1.6 Ω
40
100
680
µs
(di/dt) on
Turn-on Current Slope
R load = 1.6 Ω
0.1
A/µs
(di/dt) off
Turn-off Current Slope
R load = 1.6 Ω
V demag
Inductive Load Clamp
Voltage
R load = 1.6 Ω
V DS(MAX)
Ri
Maximum Voltage Drop I OU T = 20 A
Min.
V CC = 13 V T c = 85 C
Output to GND Internal T j = 25 o C
Impedance
1
SWITCHING
Symbol
td(on) (^)
t r (^)
td( off)(^)
tf (^)
Parameter
Rise Time Of Output
Current
Test Conditions
VC C = 13 V
0.008
VC C = 13 V
0.008
L = 1 mH
0.1
A/µs
-24
-18
-14
V
Min.
Typ.
Max.
Unit
1.5
V
(•)
V
1.5
V
100
µA
7
V
V
LOGIC INPUT
Symbol
Parameter
Test Conditions
V IL
Input Low Level
Voltage
V IH
Input High Level
Voltage
3.5
V I(hy st.)
Input Hysteresis
Voltage
0.2
II N
V ICL
Input Current
V IN = 5 V
Input Clamp Voltage
I IN = 10 mA
I IN = -10 mA
1
Tj = 25 o C
5
6
-0.7
3/11
VN16B
ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS (continued)
Symbol
Parameter
Test Conditions
Min.
V STAT
Status Voltage Output
Low
V US D
Under Voltage Shut
Down
V SCL
Status Clamp Voltage
TTS D
Thermal Shut-down
Temperature
T SD( hys t. )
Thermal Shut-down
Hysteresis
TR
Reset Temperature
V OL
Open Voltage Level
Off-State (note 2)
2.5
I OL
Open Load Current
Level
On-State
0.15
tpovl
Status Delay
(note 3)
tpol
Status Delay
(note 3)
Typ.
I STAT = 1.6 mA
I STAT = 10 mA
I STAT = -10 mA
Max.
Unit
0.4
V
3.5
5
6
V
5
6
-0.7
7
V
V
140
160
180
o
C
15
50
o
C
o
C
125
50
3.8
5
V
0.85
A
5
10
µs
400
2500
µs
(*) In= Nominal current according to ISO definition for hi gh side automotive switch (see note 1)
(^) See Switchig Time Waveforms
(•) The VI H is internally clamped at 6V about. It is possible to connect this pin to an higher voltage vi a an external resistor
cal culated to not exceed 10 mA at the i nput pin.
note 1: The Nominal Current is the current at T c = 85 o C for battery voltage of 13V which produces a voltage drop of 0.5 V
note 2: IOL( of f) = (VCC -VOL )/R OL (see fi gure)
note 3: tpo vl tpol : ISO definiti on (see figure)
Note 2 Relevant Figure
4/11
Note 3 Relevant Figure
VN16B
Switching Time Waveforms
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open load in on-state, open load in
off-state, over temperature conditions and
stuck-on to VCC.
From the falling edge of the input signal, the
status output, initially low to signal a fault
condition (overtemperature or open load
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (tpol) respectively.
This feature allows to discriminate the nature of
the detected fault. To protect the device against
short circuit and over current condition, the
thermal protection turns the integrated Power
MOS off at a minimum junction temperature of
140 oC. When this temperature returns to 125 oC
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor being located inside the Power
MOS area. An internal function of the devices
ensures the fast demagnetization of inductive
loads with a typical voltage (Vdemag) of -18V. This
function allows to greatly reduces the power
dissipation according to the formula:
Pdem = 0.5 • Lload • (Iload)2 • [(VCC+Vdemag)/Vdemag] • f
where f = switching frequency and
Vdemag = demagnetization voltage.
The maximum inductance which causes the chip
temperature to reach the shut-down temperature
in a specified thermal environment is a function of
the load current for a fixed VCC, Vdemag and f
according to the above formula. In this device if
the GND pin is disconnected, with VCC not
exceeding 16V, it will switch off.
PROTECTING
THE
DEVICE
AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig.3).
The consequences of the voltage drop across
this diode are as follows:
– If the input is pulled to power GND, a negative
voltage of -Vf is seen by the device. (Vil, Vih
thresholds and Vstat are increased by Vf with
respect to power GND).
– The undervoltage shutdown level is increased by Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 3), which becomes
the common signal GND for the whole control
board avoiding shift of Vih, Vil and Vstat. This
solution allows the use of a standard diode.
5/11
VN16B
TRUTH TABLE
INPUT
OUTPUT
DIAGNOSTIC
Normal Operation
L
H
L
H
H
H
Over-temperature
X
L
L
Under-voltage
X
L
H
Short load to V C C
H
L
H
H
L
L
Open Load
H
L
H
L
L
L (#)
(#) W ith an additional external resistor
Figure 1: Waveforms
6/11
VN16B
Figure 2: Over Current Test Circuit
Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection
Figure 4: Typical Application Circuit With Separate Signal Ground
7/11
VN16B
Pentawatt (vertical) MECHANICAL DATA
DIM.
mm
TYP.
MIN.
A
C
D
D1
E
F
F1
G
G1
H2
H3
L
L1
L2
L3
L5
L6
L7
M
M1
Dia
2.4
1.2
0.35
0.8
1
3.2
6.6
MAX.
4.8
1.37
2.8
1.35
0.55
1.05
1.4
3.6
7
10.4
10.4
3.4
6.8
10.05
MIN.
inch
TYP.
0.094
0.047
0.014
0.031
0.039
0.126
0.260
0.134
0.268
MAX.
0.189
0.054
0.110
0.053
0.022
0.041
0.055
0.142
0.276
0.409
0.409
0.396
17.85
15.75
21.4
22.5
0.703
0.620
0.843
0.886
2.6
15.1
6
3
15.8
6.6
0.102
0.594
0.236
0.118
0.622
0.260
4.5
4
0.177
0.157
3.65
3.85
0.144
0.152
E
L
D1
C
D
M
A
M1
L1
L2
G
G1
L3
H3
L5
F1
H2
L7
L6
8/11
F
Dia.
P010E
VN16B
Pentawatt (horizontal) MECHANICAL DATA
DIM.
mm
MIN.
TYP.
A
inch
MAX.
MIN.
TYP.
4.8
C
MAX.
0.189
1.37
0.054
D
2.4
2.8
0.094
0.110
D1
1.2
1.35
0.047
0.053
E
0.35
0.55
0.014
0.022
F
0.8
1.05
0.031
0.041
F1
1
1.4
0.039
G
3.2
3.4
3.6
0.126
0.134
0.142
G1
6.6
6.8
7
0.260
0.268
0.276
H2
10.4
0.055
0.409
H3
10.05
10.4
0.396
0.409
L
14.2
15
0.559
0.590
L1
5.7
6.2
0244
L2
14.6
15.2
0.598
L3
3.5
4.1
0.137
L5
2.6
3
0.102
0.118
L6
15.1
15.8
0.594
0.622
0.161
L7
6
6.6
0.236
0.260
Dia
3.65
3.85
0.144
0.152
P010F
9/11
VN16B
Pentawatt (In- Line) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.8
0.189
C
1.37
0.054
D
2.4
2.8
0.094
0.110
D1
1.2
1.35
0.047
0.053
E
0.35
0.55
0.014
0.022
F
0.8
1.05
0.031
0.041
F1
1
1.4
0.039
G
3.2
3.4
3.6
0.126
0.134
0.142
G1
6.6
6.8
7
0.260
0.268
0.276
H2
0.055
10.4
0.409
H3
10.05
10.4
0.396
L2
23.05
23.4
23.8
0.907
0.921
0.937
0.409
L3
25.3
25.65
26.1
0.996
1.010
1.028
L5
2.6
3
0.102
0.118
L6
15.1
15.8
0.594
0.622
L7
6
6.6
0.236
0.260
Dia
3.65
3.85
0.144
0.152
P010D
10/11
VN16B
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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