VN31 ISO HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE VN31 ■ ■ ■ ■ ■ ■ ■ V DSS R DS( on) I n (*) VC C 60 V 0.03 Ω 11.5 A 26 V MAXIMUM CONTINUOUS OUTPUT CURRENT (#): 31 A @ Tc= 85oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT INDUCTIVE LOAD FAST DEMAGNETIZATION VERY LOW STAND-BY POWER DISSIPATION DESCRIPTION The VN31 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The open drain diagnostic output indicates: open load in off state and in on state, output shorted to VCC and overtemperature. Fast demagnetization of inductive loads is archieved by negative (-18V) load voltage at turn-off. PENTAWATT (vertical) PENTAWATT (horizontal) PENTAWATT (in-line) ORDER CODES: PENTAWATT vertical VN31 PENTAWATT horizontal VN31 (011Y) PENTAWATT in-line VN31 (012Y) BLOCK DIAGRAM (*) In= Nominal current according to ISO definition for hi gh side automotive switch (see note 1) (#) T he maximum continuous output current is the current at T c = 85 o C for a battery voltage of 13 V which does not activate sel f protection September 1994 1/11 VN31 ABSOLUTE MAXIMUM RATING Symbol V( BR)DSS Parameter Drain-Source Breakdown Voltage o Unit 60 V Output Current (cont.) at T c = 85 C 31 A IR Reverse Output Current at T c = 85 o C -31 A II N Input Current ±10 mA -4 V ±10 mA 2000 V IO UT -V CC Reverse Supply Voltage ISTA T Status Current VE SD Electrostatic Discharge (1.5 kΩ, 100 pF) P tot Tj T stg o Power Dissipation at T c = 85 C Junction Operating Temperature Storage Temperature CONNECTION DIAGRAM CURRENT AND VOLTAGE CONVENTIONS 2/11 Value 54 W -40 to 150 o C -55 to 150 o C VN31 THERMAL DATA R thj-cas e Rthj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 1.2 60 o C/W C/W ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified) POWER Symbol VC C Parameter Test Conditions Supply Voltage V DS(on ) ≤ 0.5 (note 1) o In(*) Nominal Current T c = 85 C R on On State Resistance I OU T = 11.5 A I OU T = 11.5 A Supply Current Off State On State IS V DS(MAX) Min. Typ. Max. Unit 5.5 13 26 V 11.5 A Tj = 25 o C T j ≥ 25 oC Maximum Voltage Drop I OU T = 25 A T c = 85 o C 0.06 0.03 Ω Ω 50 15 µA mA 1.5 V Max. Unit SWITCHING Symbol td(on) (^) t r (^) td( off)(^) tf (^) Parameter Test Conditions Min. Turn-on Delay Time Of I OU T = 11.5 A Resistive Load Output Current Input Rise Time < 0.1 µs Rise Time Of Output Current I OU T = 11.5A Resistive Load Input Rise Time < 0.1 µs Turn-off Delay Time Of I OU T = 11.5 A Resistive Load Output Current Input Rise Time < 0.1 µs Typ. 90 µs 100 µs 140 µs 50 µs Fall Time Of Output Current I OU T = 11.5 A Resistive Load Input Rise Time < 0.1 µs (di/dt) on Turn-on Current Slope I OU T = 11.5 A I OU T = I OV 0.08 0.5 1 A/µs A/µs (di/dt) off Turn-off Current Slope I OU T = 11.5 A I OU T = I OV 0.2 3 3 A/µs A/µs V demag Inductive Load Clamp Voltage I OU T = 11.5 A L = 1 mH -24 -18 -14 V Min. Typ. Max. Unit 0.8 V (•) V LOGIC INPUT Symbol Parameter V IL Input Low Level Voltage V IH Input High Level Voltage V I(hy st.) Input Hysteresis Voltage II N V ICL Input Current Input Clamp Voltage Test Conditions 2 0.5 V IN = 5 V V IN = 2 V V IN = 0.8 V I IN = 10 mA I IN = -10 mA 250 V 500 250 25 5.5 6 -0.7 -0.3 µA µA µA V V 3/11 VN31 ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS (continued) Symbol Parameter Test Conditions V STAT Status Voltage Output Low V US D Under Voltage Shut Down V SCL Status Clamp Voltage I STAT = 10 mA I STAT = -10 mA Over Current R LOA D < 10 mΩ R LOA D < 10 mΩ I OV Min. Typ. I STAT = 1.6 mA Max. Unit 0.4 V 5 V 6 -0.7 V V -40 ≤ T c ≤ 125 o C 140 A o 2.5 A I AV Average Current in Short Circuit Tc = 85 C I OL Open Load Current Level 5 TTS D Thermal Shut-down Temperature 140 o C TR Reset Temperature 125 o C V OL Open Load Voltage Level Off-State (note 2) t 1(on) Open Load Filtering Time t 1(off ) 600 1250 mA 2.5 3.75 5 V (note 3) 1 5 10 ms Open Load Filtering Time (note 3) 1 5 10 ms t 2(off ) Open Load Filtering Time (note 3) 1 5 10 ms tpovl Status Delay (note 3) 5 10 µs tpol Status Delay (note 3) 50 700 µs (^) See Switchig Time Waveforms (•) The VI H is internally clamped at 6V about. It is possible to connect this pin to an higher voltage vi a an external resistor cal culated to not exceed 10 mA at the i nput pin. note 1: The Nominal Current is the current at T c = 85 o C for battery voltage of 13V which produces a voltage drop of 0.5 V note 2: IOL( of f) = (VCC -VOL )/R OL (see fi gure) note 3: t1( on ): minimum open load duration which accti vates the status output t 1( of f): mini mum l oad recovery time whi ch desactivates the status output t 2( of f): mini mum on ti me after thermal shut down which desacti vates status output t po vl tpol : ISO definiti on (see figure) Note 2 Relevant Figure 4/11 Note 3 Relevant Figure VN31 Switching Time Waveforms FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open load conditions in off state as well as in on state, output shorted to VCC and overtemperature. The truth table shows input, diagnostic and output voltage level in normal operation and in fault conditions. The output signals are processed by internal logic. The open load diagnostic output has a 5 ms filtering. The filter gives a continuous signal for the fault condition after an initial delay of about 5 ms. This means that a disconnection during normal operation, with a duration of less than 5 ms does not affect the status output. Equally, any re-connection of less than 5 ms during a disconnection duration does not affect the status output. No delay occur for the status to go low in case of overtemperature conditions. From the falling edge of the input signal the status output initially low in fault condition (over temperature or open load) will go back with a delay (tpovl)in case of overtemperature condition and a delay (tpol) in case of open load. These feature fully comply with International Standard Office (I.S.O.) requirement for automotive High Side Driver. To protect the device against short circuit and over current conditions, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to 125 oC the switch is automatically turned on again. In short circuit the protection reacts with virtually no delay, the sensor being located in the region of the die where the heat is generated. Driving inductive loads, an internal function of the device ensures the fast demagnetization with a typical voltage (Vdemag) of -18V. This function allows to greatly reduce the power dissipation according to the formula: Pdem = 0.5 • Lload • (Iload)2 • [(VCC+Vdemag)/Vdemag] • f where f = switching frequency and Vdemag = demagnetization voltage Based on this formula it is possible to know the value of inductance and/or current to avoid a thermal shut-down. The maximum inductance which causes the chip temperature to reach the shut down temperature in a specific thermal environment, is infact a function of the load current for a fixed VCC, Vdemag and f. PROTECTING THE DEVICE AGAIST LOAD DUMP - TEST PULSE 5 The device is able to withstand the test pulse No. 5 at level II (Vs = 46.5V) according to the ISO T/R 7637/1 without any external component. This means that all functions of the device are performed as designed after exposure to disturbance at level II. The VN31 is able to withstand the test pulse No.5 at level III adding an external resistor of 150 ohm between pin 1 and ground plus a filter capacitor of 1000 µF between pin 3 and ground (if RLOAD ≤ 20 Ω). PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1(GND) and ground, as shown in the typical application circuit (fig.3). The consequences of the voltage drop across this diode are as follows: – If the input is pulled to power GND, a negative voltage of -Vf is seen by the device. (Vil, Vih thresholds and Vstat are increased by Vf with respect to power GND). – The undervoltage shutdown level is increased by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in fig. 4), which becomes the common signal GND for the whole control board avoiding shift of Vih, Vil and Vstat. This solution allows the use of a standard diode. 5/11 VN31 TRUTH TABLE INPUT OUTPUT DIAGNOSTIC Normal Operation L H L H H H Open Circuit (No Load) H H L Over-temperature H L L Under-voltage X L H Short load to V C C L H L Figure 1: Waveforms Figure 2: Over Current Test Circuit 6/11 VN31 Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 4: Typical Application Circuit With Separate Signal Ground 7/11 VN31 Pentawatt (vertical) MECHANICAL DATA DIM. mm TYP. MIN. A C D D1 E F F1 G G1 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia 2.4 1.2 0.35 0.8 1 3.2 6.6 MAX. 4.8 1.37 2.8 1.35 0.55 1.05 1.4 3.6 7 10.4 10.4 3.4 6.8 10.05 MIN. inch TYP. 0.094 0.047 0.014 0.031 0.039 0.126 0.260 0.134 0.268 MAX. 0.189 0.054 0.110 0.053 0.022 0.041 0.055 0.142 0.276 0.409 0.409 0.396 17.85 15.75 21.4 22.5 0.703 0.620 0.843 0.886 2.6 15.1 6 3 15.8 6.6 0.102 0.594 0.236 0.118 0.622 0.260 4.5 4 0.177 0.157 3.65 3.85 0.144 0.152 E L D1 C D M A M1 L1 L2 G G1 L3 H3 L5 F1 H2 L7 L6 8/11 F Dia. P010E VN31 Pentawatt (horizontal) MECHANICAL DATA DIM. mm MIN. TYP. A inch MAX. MIN. TYP. 4.8 C MAX. 0.189 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 G 3.2 3.4 3.6 0.126 0.134 0.142 G1 6.6 6.8 7 0.260 0.268 0.276 H2 10.4 0.055 0.409 H3 10.05 10.4 0.396 0.409 L 14.2 15 0.559 0.590 L1 5.7 6.2 0244 L2 14.6 15.2 0.598 L3 3.5 4.1 0.137 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 0.161 L7 6 6.6 0.236 0.260 Dia 3.65 3.85 0.144 0.152 P010F 9/11 VN31 Pentawatt (In- Line) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 G 3.2 3.4 3.6 0.126 0.134 0.142 G1 6.6 6.8 7 0.260 0.268 0.276 H2 0.055 10.4 0.409 H3 10.05 10.4 0.396 L2 23.05 23.4 23.8 0.907 0.921 0.937 0.409 L3 25.3 25.65 26.1 0.996 1.010 1.028 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 Dia 3.65 3.85 0.144 0.152 P010D 10/11 VN31 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 11/11