IRLS610A Advanced Power MOSFET FEATURES BVDSS = 200 V ! Avalanche Rugged Technology RDS(on) = 0.046Ω ! Rugged Gate Oxide Technology ! Lower Input Capacitance ID = 2.5 A ! Improved Gate Charge ! Extended Safe Operating Area TO-220F ! Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ! Lower RDS(ON) : 1.185Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID Characteristic Value Units Drain-to-Source Voltage 200 V Continuous Drain Current (TC=25℃) 2.5 Continuous Drain Current (TC=100℃) 1.6 ① A IDM Drain Current-Pulsed VGS Gate-to-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy ② 20 mJ A 12 IAR Avalanche Current ① 2.9 A EAR Repetitive Avalanche Energy ① 1.9 mJ dv/dt Peak Diode Recovery dv/dt ③ 5.0 V/ns PD TJ , TSTG TL Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and 19 W 0.15 W/℃ - 55 to +150 Storage Temperature Range ℃ Maximum Lead Temp. for Soldering 300 Purposes, 1/8＂ from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. RθJC Junction-to-Case -- 6.6 RθJA Junction-to-Ambient -- 62.5 Units o C/W Rev. A N-CHANNEL POWER MOSFET IRLS610A Electrical Characteristics (TC=25oC unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) Min. Typ. Max. Units Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance 200 -- -- -- 0.19 -- 1.0 -- 2.0 -- -- 100 V nA See Fig 7 VDS=VGS, ID=250µA VGS=20V VGS=--20V -- -100 -- 10 -- -- 100 -- -- 1.5 Ω VGS=5V,ID=1.25A ④ S VDS=40V,ID=1.25A ④ Forward Transconductance -- 1.9 -- Input Capacitance -- 185 240 Coss Output Capacitance -- 35 45 Crss Reverse Transfer Capacitance -- 14 20 td(on) Turn-On Delay Time -- 9 30 Rise Time -- 9 30 Turn-Off Delay Time -- 20 50 Fall Time -- 6 20 tf V/ C ID=250µA -- gfs td(off) VGS=0V,ID=250µA o -- Ciss tr V Test Condition Qg Total Gate Charge -- 6.1 9 Qgs Gate-Source Charge -- 1.4 -- Qgd Gate-Drain(“Miller”) Charge -- 2.8 -- µA pF VDS=200V o VDS=160V,TC=125 C VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=100V,ID=3.3A, ns RG=22Ω See Fig 13 ④⑤ VDS=160V,VGS=5V, nC ID=3.3A See Fig 6 & Fig 12 ④ ⑤ Source-Drain Diode Ratings and Characteristics Symbol Characteristic IS Continuous Source Current Min. Typ. Max. Units -- -- 3.3 A Test Condition Integral reverse pn-diode ISM Pulsed-Source Current ① -- -- 12 VSD Diode Forward Voltage ④ -- -- 1.5 V TJ=25 C,IS=2.5A,VGS=0V trr Reverse Recovery Time -- 123 -- ns TJ=25 C,IF=3.3A Qrr Reverse Recovery Charge -- 0.38 -- µC diF/dt=100A/µs Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=5mH, IAS=2.5A, VDD=50V, RG=27Ω, Starting TJ =25oC ③ ISD≤3.3A, di/dt≤140A/µs, VDD≤BVDSS , Starting TJ =25oC ④ Pulse Test : Pulse Width = 250µs, Duty Cycle ≤ 2% ⑤ Essentially Independent of Operating Temperature in the MOSFET o o ④ N-CHANNEL POWER MOSFET IRL610A Fig 1. Output Characteristics Fig 2. Transfer Characteristics 101 101 V GS 100 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V ID , Drain Current [A] ID , Drain Current [A] Top : @ Notes : 1. 250 µs Pulse Test 2. T = 25 oC -1 10 100 25 oC GS 10-1 101 Fig 3. On-Resistance vs. Drain Current 0 101 IDR , Reverse Drain Current [A] RDS(on) , [ Ω ] Drain-Source On-Resistance 3 VGS = 5 V 2 1 2 4 @ Note : TJ = 25 oC 6 DS 2 8 4 6 8 10 VGS , Gate-Source Voltage [V] 4 VGS = 10 V 2. V = 40 V 3. 250 µs Pulse Test VDS , Drain-Source Voltage [V] 0 0 @ Notes : 1. V = 0 V - 55 oC C 10-1 150 oC 100 10 Fig 4. Source-Drain Diode Forward Voltage 100 @ Notes : 1. VGS = 0 V 150 oC o 25 C 10-1 0.4 ID , Drain Current [A] 0.6 2. 250 µs Pulse Test 0.8 1.0 1.2 1.4 VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 300 C iss 180 120 C oss 60 C rss 00 10 @ Notes : 1. VGS = 0 V 2. f = 1 MHz 101 VDS , Drain-Source Voltage [V] 6 VGS , Gate-Source Voltage [V] Capacitance [pF] 240 Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd VDS = 40 V VDS =100 V 4 VDS = 160 V 2 @ Notes : ID = 3.3 A 0 0 2 4 QG , Total Gate Charge [nC] 6 N-CHANNEL POWER MOSFET IRLS610A Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 2.5 RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 @ Notes : 1. V = 0 V 2.0 1.5 1.0 @ Notes : 1. VGS = 5 V 2. ID = 1.65 A 0.5 GS 2. I = 250 µA D 0.8 -75 -50 -25 0 25 50 75 100 125 150 0.0 -75 175 -50 -25 o 0 25 50 75 100 125 150 175 TJ , Junction Temperature [ C] TJ , Junction Temperature [oC] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Ambient Temperature ID , Drain Current [A] 101 100 µs 1 ms 10 ms 100 DC 10-1 @ Notes : 1. TC = 25 oC 0.8 0.6 0.4 0.2 100 101 0.0 25 102 50 102 100 75 100 Fig 11. Thermal Response D=0.5 0.2 101 0.1 @ Notes : 1. Z J A (t)=69.4 0.05 o θ C/W Max. 2. Duty Factor, D=t1 /t2 0.02 3. TJ M -TA =PD M *Z θJA 0.01 10- 1 - 5 10 (t) PDM t1 single pulse t2 10- 4 10- 3 125 TA , Ambient Temperature [oC] VDS , Drain-Source Voltage [V] Thermal Response 10-3 -1 10 2. TJ = 150 oC 3. Single Pulse θJA 10-2 Z (t) , ID , Drain Current [A] 1.0 Operation in This Area is Limited by R DS(on) 10- 2 10- 1 100 t1 , Square Wave Pulse Duration 101 102 [sec] 103 150 N-CHANNEL POWER MOSFET IRLS610A Fig 12. Gate Charge Test Circuit & Waveform ＂Current Regulator＂ VGS Same Type as DUT 50KΩ Qg 200nF 12V 5V 300nF VDS Qgs VGS Qgd DUT 3mA R1 R2 Current Sampling (IG) Resistor Current Sampling (ID) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10% 5V td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 5V tp tp Time N-CHANNEL POWER MOSFET IRLS610A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by ＂RG＂ • IS controlled by Duty Factor ＂D＂ Gate Pulse Width D = -------------------------Gate Pulse Period 5V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series FAST â FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC â OPTOPLANAR PACMAN POP Power247 PowerTrench â QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER â UHC SMART START UltraFET â SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H5