STMICROELECTRONICS VNB14NV0413TR

®
VNB14NV04 / VND14NV04
/ VND14NV04-1 / VNP14NV04 / VNS14NV04
“OMNIFET II”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
VNB14NV04
RDS(on)
Ilim
Vclamp
3
VND14NV04
VND14NV04-1
1
35 mΩ
12 A
TO-252 (DPAK)
40 V
SO-8
VNP14NV04
VNS14NV04
3
2
3
LINEAR CURRENT LIMITATION
■ THERMAL SHUT DOWN
■ SHORT CIRCUIT PROTECTION
■ INTEGRATED CLAMP
■ LOW CURRENT DRAWN FROM INPUT PIN
■ DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
■ ESD PROTECTION
■ DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
■ COMPATIBLE WITH STANDARD POWER
MOSFET
■
DESCRIPTION
The VNB14NV04, VND14NV04, VND14NV04-1,
VNP14NV04, VNS14NV04, are monolithic
devices designed in STMicroelectronics VIPower
M0-3 Technology, intended for replacement of
standard Power MOSFETS from DC up to 50KHz
BLOCK DIAGRAM
1
1
2
TO-220
TO-251 (IPAK)
D2PAK
3
1
ORDER CODES
PACKAGE
TUBE
T&R
VNB14NV04
VNB14NV0413TR
D2PAK
TO-252 (DPAK) VND14NV04
VND14NV0413TR
TO-251 (IPAK) VND14NV04-1
TO-220
VNP14NV04
SO-8
VNS14NV04
-
applications. Built in thermal shutdown, linear
current limitation |and overvoltage clamp protect
the chip in harsh environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
DRAIN
2
Overvoltage
Clamp
INPUT
1
Gate
Control
Over
Temperature
Linear
Current
Limiter
3
SOURCE
July 2003
1/29
1
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
VDS
VIN
IIN
RIN MIN
ID
IR
VESD1
Drain-source Voltage (VIN=0V)
Input Voltage
Input Current
Minimum Input Series Impedance
Drain Current
Reverse DC Output Current
Electrostatic Discharge (R=1.5KΩ, C=100pF)
Electrostatic Discharge on output pin only
(R=330Ω, C=150pF)
Total Dissipation at Tc=25°C
Maximum Switching Energy (L=0.4mH;
RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=18A)
Operating Junction Temperature
Case Operating Temperature
Storage Temperature
VESD2
Ptot
EMAX
Tj
Tc
Tstg
Value
DPAK
TO-220
IPAK
Internally Clamped
Internally Clamped
+/-20
10
Internally Limited
-15
4000
SO-8
D2PAK
V
V
mA
Ω
A
A
V
16500
4.6
74
74
93
V
74
74
W
93
mJ
Internally limited
Internally limited
-55 to 150
°C
°C
°C
CONNECTION DIAGRAM (TOP VIEW)
SO-8 Package (*)
SOURCE
1
8
DRAIN
SOURCE
4
INPUT
DRAIN
DRAIN
SOURCE
5
DRAIN
(*) For the pins configuration related to DPAK, D2 PAK, IPAK, TO-220 see outlines at page 1.
CURRENT AND VOLTAGE CONVENTIONS
ID
VDS
DRAIN
IIN
RIN
INPUT
SOURCE
VIN
2/29
1
Unit
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
THERMAL DATA
Symbol
Rthj-case
Rthj-lead
Rthj-amb
Parameter
SO-8
Thermal Resistance Junction-case
MAX
Thermal Resistance Junction-lead
MAX
Thermal Resistance Junction-ambient MAX
27
90 (*)
DPAK
1.7
Value
TO-220
1.7
IPAK
1.7
D2PAK
1.7
65 (*)
62
102
52 (*)
Unit
°C/W
°C/W
°C/W
mounted on a standard single-sided FR4 board with 0.5cm2 of Cu (at least 35 µm thick) connected to all DRAIN pins.
Horizontal mounting and no artificial air flow.
(*) When
ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified)
OFF
Symbol
VCLAMP
VCLTH
VINTH
IISS
VINCL
IDSS
Parameter
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input Threshold Voltage
Supply Current from Input
Pin
Input-Source Clamp
Voltage
Zero Input Voltage Drain
Current (VIN=0V)
Test Conditions
Min
Typ
Max
Unit
VIN=0V; ID=7A
40
45
55
V
VIN=0V; ID=2mA
36
VDS=VIN; ID=1mA
0.5
VDS=0V; VIN=5V
IIN=1mA
IIN=-1mA
VDS=13V; VIN=0V; Tj=25°C
6
V
2.5
V
100
150
µA
6.8
8
-1.0
-0.3
30
VDS=25V; VIN=0V
75
V
µA
ON
Symbol
RDS(on)
Parameter
Static Drain-source On
Resistance
Test Conditions
VIN=5V; ID=7A; Tj=25°C
VIN=5V; ID=7A
Min
Typ
Max
35
70
Unit
mΩ
3/29
1
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)
DYNAMIC
Symbol
gfs (*)
COSS
Parameter
Forward
Transconductance
Output Capacitance
Test Conditions
Min
Typ
Max
Unit
VDD=13V; ID=7A
18
S
VDS=13V; f=1MHz; VIN=0V
400
pF
SWITCHING
Symbol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Parameter
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
(di/dt)on
Turn-on Current Slope
Qi
Total Input Charge
Test Conditions
Min
VDD=15V; ID=7A
Vgen=5V; Rgen=RIN MIN=10Ω
(see figure 1)
VDD=15V; ID=7A
Vgen=5V; Rgen=2.2KΩ
(see figure 1)
VDD=15V; ID=7A
Vgen=5V; Rgen=RIN MIN=10Ω
VDD=12V; ID =7A; VIN=5V; Igen=2.13mA
(see figure 5)
Typ
80
350
450
150
1.5
9.7
9
10.2
Max
250
1000
1350
500
4.5
30.0
25.0
30.0
Unit
ns
ns
ns
ns
µs
µs
µs
µs
16
A/µs
36.8
nC
SOURCE DRAIN DIODE
Symbol
VSD (*)
trr
Qrr
IRRM
Parameter
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
ISD =7A; VIN=0V
ISD=7A; di/dt=40A/µs
Min
VDD=30V; L=200µH
Reverse Recovery Current (see test circuit, figure 2)
Typ
0.8
300
0.8
Max
5
Unit
V
ns
µC
A
PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)
Symbol
Ilim
tdlim
Tjsh
Tjrs
Igf
Eas
Parameter
Drain Current Limit
Step Response Current
Limit
Test Conditions
VIN=5V; VDS=13V
VIN=5V; VDS=13V
Overtemperature
Shutdown
Overtemperature Reset
Fault Sink Current
Single Pulse
Avalanche Energy
VIN=5V; VDS=13V; Tj=Tjsh
starting Tj=25°C; VDD =24V
VIN= 5V; Rgen=RIN MIN=10Ω; L=24mH
(see figures 3 & 4)
(*) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
4/29
2
Min
12
Typ
18
Max
24
Unit
A
µs
45
150
175
200
°C
135
10
15
20
°C
mA
400
mJ
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
PROTECTION FEATURES
During normal operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path.
The device then behaves like a standard power
MOSFET and can be used as a switch from DC up
to 50KHz. The only difference from the user’s
standpoint is that a small DC current IISS (typ.
100µA) flows into the INPUT pin in order to supply
the internal circuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:
internally set at 45V, along with the rugged
avalanche characteristics of the Power MOSFET
stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly
important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT:
limits the drain current ID to Ilim whatever the
INPUT pin voltages. When the current limiter is
active, the device operates in the linear region, so
power dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
junction
temperature
may
reach
the
overtemperature threshold Tjsh.
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION:
these are based on sensing the chip temperature
and are not dependent on the input voltage. The
location of the sensing element on the chip in the
power stage area ensures fast, accurate detection
of the junction temperature. Overtemperature
cutout occurs in the range 150 to 190 °C, a typical
value being 170 °C. The device is automatically
restarted when the chip temperature falls of about
15°C below shut-down temperature.
- STATUS FEEDBACK:
in the case of an overtemperature fault condition
(Tj > Tjsh), the device tries to sink a diagnostic
current Igf through the INPUT pin in order to
indicate fault condition. If driven from a low
impedance source, this current may be used in
order to warn the control circuit of a device
shutdown. If the drive impedance is high enough
so that the INPUT pin driver is not able to supply
the current Igf, the INPUT pin will fall to 0V. This
will not however affect the device operation:
no requirement is put on the current capability
of the INPUT pin driver except to be able to
supply the normal operation drive current IISS.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.
5/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
Figure 1: Switching Time Test Circuit for Resistive Load
VD
Rgen
Vgen
ID
90%
tr
tf
10%
t
td(on)
td(off)
Vgen
t
Figure 2: Test Circuit for Diode Recovery Times
A
A
D
I
FAST
DIODE
OMNIFET
S
L=100uH
B
B
25 Ω
D
Rgen
Vgen
VDD
I
OMNIFET
S
8.5 Ω
6/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
Figure 3: Unclamped Inductive Load Test Circuits
Figure 4: Unclamped Inductive Waveforms
RGEN
VIN
PW
Figure 5: Input Charge Test Circuit
VIN
GEN
ND8003
7/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
Source-Drain Diode Forward Characteristics
Static Drain Source On Resistance
Vsd (mV)
Rds(on) (mohms)
1000
180
160
950
Tj=-40ºC
Vin=2.5V
Vin=0V
140
900
120
850
Tj=25ºC
100
800
80
Tj=150ºC
750
60
700
40
650
20
0
2
4
6
8
10
12
14
16
18
0.1
0.2
0.3
0.4
0.5
Id (A)
0.6
0.7
0.8
0.9
1
Id(A)
Static Drain-Source On resistance Vs. Input
Voltage
Derating Curve
Rds(on) (mohms)
80
70
Tj=150ºC
60
50
Id=12A
Id=1A
Tj=25ºC
40
30
Id=12A
Id=1A
Tj=-40ºC
20
Id=12A
Id=1A
10
3
3.5
4
4.5
5
5.5
6
6.5
Vin(V)
Static Drain-Source On resistance Vs. Input
Voltage
Transconductance
Rds(on) (mohms)
Gfs (S)
80
24
22
70
Id=7A
Tj=25ºC
Tj=-40ºC
Vds=13V
20
18
60
Tj=150ºC
16
Tj=150ºC
50
14
12
40
10
8
30
6
Tj=25ºC
4
20
Tj= - 40ºC
2
0
10
3
3.5
4
4.5
Vin(V)
8/29
5
5.5
6
6.5
0
1
2
3
4
5
6
7
Id(A)
8
9
10
11
12
13
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
Static Drain-Source On Resistance Vs. Id
Transfer Characteristics
Rds(on) (mohms)
Idon (A)
70
18
Tj=25ºC
16
60
Vds=13.5V
Vin=5V
Tj=-40ºC
14
Tj=150ºC
50
12
40
10
8
30
Tj=25ºC
Tj=150ºC
6
20
4
Tj=-40ºC
2
10
0
0
2
0
1
2
3
4
5
6
7
8
9
10
11
12
13
2.5
2.25
3
2.75
3.5
3.25
Id(A)
4
3.75
4.5
4.25
5
4.75
5.5
5.25
Vin (V)
Turn On Current Slope
Turn On Current Slope
di/dt(A/us)
di/dt(A/us)
20
6
5.5
17.5
Vin=3.5V
Vdd=15V
Id=7A
5
Vin=5V
Vdd=15V
Id=7A
15
4.5
4
12.5
3.5
10
3
2.5
7.5
2
5
1.5
1
2.5
0.5
0
0
0
250
500
750
1000 1250 1500 1750 2000 2250
0
250
500
750
1000 1250
1500 1750
2000
2250
Rg(ohm)
Rg(ohm)
Turn off drain source voltage slope
Input Voltage Vs. Input Charge
Vin (V)
dv/dt(V/us)
8
300
275
7
6
Vin=5V
Vdd=15V
Id=7A
250
Vds=12V
Id=7A
225
200
5
175
150
4
125
100
3
75
2
50
25
1
0
0
0
0
5
10
15
20
25
Qg (nC)
30
35
40
250
500
750 1000 1250 1500 1750 2000 2250 2500
45
Rg(ohm)
9/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
Turn Off Drain-Source Voltage Slope
Capacitance Variations
C(pF)
dv/dt(v/us)
1000
300
275
900
Vin=3.5V
Vdd=15V
Id=7A
250
225
f=1MHz
Vin=0V
800
200
700
175
600
150
125
500
100
75
400
50
300
25
0
200
250
0
750
500
1000 1250 1500 1750 2000
2250
0
5
10
15
20
25
30
35
Vds(V)
Rg(ohm)
Switching Time Resistive Load
Switching Time Resistive Load
t(ns)
t(us)
1750
11
tf
10
Vdd=15V
Id=7A
Vin=5V
9
8
1500
tr
td(off)
Vdd=15V
Id=7A
Rg=10ohm
1250
7
1000
6
5
750
4
3
td(off)
500
2
td(on)
tr
250
1
0
250
0
500
tf
td(on)
0
750 1000 1250 1500 1750 2000 2250 2500
3
3.25
3.5
3.75
4.25
4.5
4.75
5
5.25
Vin(V)
Rg(ohm)
Normalized On Resistance Vs. Temperature
Output Characteristics
Rds(on) (mOhm)
Id (A)
4
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Vin=5V
3.5
Vin=4V
Vin=5V
Id=7A
3
Vin=3V
2.5
2
1.5
1
0.5
Vin=2V
0
0.5
1
1.5
2
2.5
3
Vds (V)
10/29
4
3.5
4
0
4.5
5
5.5
6
-50
-25
0
25
50
75
Tc (ºC)
100
125
150
175
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
Normalized Input
Temperature
Threshold
Voltage
Vs.
Current Limit Vs. Junction Temperature
Ilim (A)
Vinth (V)
2
40
1.75
35
Vds=Vin
Id=1mA
1.5
Vin=5V
Vds=13V
30
1.25
25
1
20
0.75
15
0.5
10
0.25
5
0
0
-50
-25
0
25
50
75
100
125
150
175
Tc (ºC)
-50
-25
0
25
50
75
100
125
150
175
Tc (ºC)
Step Response Current Limit
Tdlim(us)
55
52.5
Vin=5V
Rg=10ohm
50
47.5
45
42.5
40
37.5
35
32.5
30
7.5
10
12.5
15
17.5
20
22.5
25
27.5
30
32.5
Vdd(V)
11/29
1
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
DPAK Maximum turn off current versus load inductance
ILMAX (A)
100
A
10
B
C
1
0.01
0.1
1
10
L(mH )
A = Single Pulse at TJstart=150ºC
B= Repetitive pulse at TJstart=100ºC
C= Repetitive Pulse at TJstart=125ºC
Conditions:
VCC=13.5V
Values are generated with RL=0Ω
In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed
the temperature specified above for curves B and C.
VIN, IL
Demagnetization
Demagnetization
Demagnetization
t
12/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
D2PAK Maximum turn off current versus load inductance
ILMAX (A)
100
A
B
C
10
1
0.01
0.1
1
L(mH)
10
100
A = Single Pulse at TJstart=150ºC
B= Repetitive pulse at TJstart=100ºC
C= Repetitive Pulse at TJstart=125ºC
Conditions:
VCC=13.5V
Values are generated with RL=0Ω
In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed
the temperature specified above for curves B and C.
VIN, IL
Demagnetization
Demagnetization
Demagnetization
t
13/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
DPAK THERMAL DATA
DPAK PC Board
Layout condition of Rth and Zth measurements (PCB FR4 area= 60mm x 60mm, PCB thickness=2mm,
Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8cm2).
Rthj-amb Vs PCB copper area in open box free air condition
RTH j_amb (ºC/W)
90
80
70
60
50
40
30
0
2
4
6
PCB CU heatsink area (cm^2)
14/29
8
10
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
SO-8 THERMAL DATA
SO-8 PC Board
Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm,
Cu thickness=35µm, Copper areas: 0.14cm2, 0.6cm2, 1.6cm2).
Rthj-amb Vs PCB copper area in open box free air condition
SO-8 at 4 pins connected to TAB
RTHj_amb
(ºC/W)
110
105
100
95
90
85
80
75
70
0
0.5
1
1.5
2
2.5
PCB CU heatsink area (cm^2)
15/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
D2PAK THERMAL DATA
D2PAK PC Board
Layout condition of Rth and Zth measurements (PCB FR4 area= 60mm x 60mm, PCB thickness=2mm,
Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8cm2).
Rthj-amb Vs PCB copper area in open box free air condition
RTHj_amb (°C/W)
55
Tj-Tamb=50°C
50
45
40
35
30
0
2
4
6
PCB Cu heatsink area (cm^2)
16/29
8
10
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
DPAK Thermal Impedance Junction Ambient Single Pulse
ZT H (°C/W)
1000
100
Footprint
6 cm2
10
1
0.1
0.0001
0.001
0.01
0.1
1
T ime (s)
Thermal fitting model of an OMNIFET II in
DPAK
10
100
1000
Pulse calculation formula
Z THδ = R TH ⋅ δ + Z THtp ( 1 – δ )
where
δ = tp ⁄ T
Thermal Parameter
Tj
C1
C2
C3
C4
C5
C6
R1
R2
R3
R4
R5
R6
Pd
T_amb
Area/island (cm2)
R1 (°C/W)
R2 (°C/W)
R3 ( °C/W)
R4 (°C/W)
R5 (°C/W)
R6 (°C/W)
C1 (W.s/°C)
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
Footprint
0.1
0.35
1.20
2
15
61
0.0006
0.0021
0.05
0.3
0.45
0.8
6
24
5
17/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
D2PAK Thermal Impedance Junction Ambient Single Pulse
ZTH (°C/W)
1000
100
Footprint
6 cm2
10
1
0.1
0.0001
0.001
0.01
0.1
1
Time (s)
Thermal fitting model of an OMNIFET II in
D2PAK
10
100
1000
Pulse calculation formula
Z THδ = R TH ⋅ δ + Z THtp ( 1 – δ )
where
δ = tp ⁄ T
Thermal Parameter
Tj
C1
C2
C3
C4
C5
C6
R1
R2
R3
R4
R5
R6
Pd
T_amb
18/29
Area/island (cm2)
R1 (°C/W)
R2 (°C/W)
R3 ( °C/W)
R4 (°C/W)
R5 (°C/W)
R6 (°C/W)
C1 (W.s/°C)
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
Footprint
0.1
0.35
0.3
4
9
37
0.0006
2.10E-03
8.00E-02
0.45
2
3
6
22
5
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
TO-251 (IPAK) MECHANICAL DATA
mm.
DIM.
MIN.
inch
MAX.
MIN.
A
2.2
TYP
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
TYP.
MAX.
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031
0.039
A1
C2
A3
A
C
H
B
B6
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B3
L2
L1
19/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
D2PAK MECHANICAL DATA
DIM.
mm.
MIN.
TYP
MAX.
A
4.4
4.6
A1
2.49
2.69
A2
0.03
0.23
B
0.7
0.93
B2
1.14
1.7
C
0.45
0.6
C2
1.23
1.36
D
8.95
D1
E
10
E1
G
9.35
8
10.4
8.5
4.88
5.28
L
15
15.85
L2
1.27
1.4
L3
1.4
1.75
M
2.4
3.2
R
V2
0.4
0º
8º
P011P6
20/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
TO-252 (DPAK) MECHANICAL DATA
DIM.
mm.
MIN.
TYP
MAX.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
B
0.64
0.90
B2
5.20
5.40
C
0.45
0.60
C2
0.48
0.60
D
6.00
6.20
D1
E
5.1
6.40
6.60
E1
4.7
e
2.28
G
4.40
4.60
H
9.35
10.10
L2
L4
0.8
0.60
R
V2
Package Weight
1.00
0.2
0°
8°
Gr. 0.29
P032P
21/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
TO-220 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
M
DIA.
0.154
2.6
0.102
3.75
3.85
0.147
0.151
.
'
#
&
%
/
.
.
.
.
.
8
*
KC
&
)
(
8
(
(
.
22/29
MAX.
)
*
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
SO-8 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
A
a1
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.25
a2
MAX.
0.003
0.009
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
c1
45 (typ.)
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
F
0.6
0.023
8 (max.)
23/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)
A
16.90
C
12.20
5.08
1.60
B
3.50
9.75
All dimensions
are in millimeters
Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
50
500
532
6
21.3
0.6
All dimensions are in mm.
TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
1000
1000
330
1.5
13
20.2
24.4
60
30.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (± 0.1)
P
D (± 0.1/-0)
D1 (min)
F (± 0.05)
K (max)
P1 (± 0.1)
All dimensions are in mm.
24
4
16
1.5
1.5
11.5
6.5
2
End
Start
Top
No components
Components
No components
cover
tape
500mm min
Empty components pockets
saled with cover tape.
User direction of feed
24/29
500mm min
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)
A
6 .7
1 .8
3 .0
1 .6
C
2 .3
6 .7
2 .3
B
Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
75
3000
532
6
21.3
0.6
All dimensions are in mm.
TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
2500
2500
330
1.5
13
20.2
16.4
60
22.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (± 0.1)
P
D (± 0.1/-0)
D1 (min)
F (± 0.05)
K (max)
P1 (± 0.1)
All dimensions are in mm.
16
4
8
1.5
1.5
7.5
6.5
2
End
Start
Top
No components
Components
No components
cover
tape
500mm min
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
25/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
SO-8 TUBE SHIPMENT (no suffix)
B
Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
C
A
100
2000
532
3.2
6
0.6
All dimensions are in mm.
TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
2500
2500
330
1.5
13
20.2
12.4
60
18.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (± 0.1)
P
D (± 0.1/-0)
D1 (min)
F (± 0.05)
K (max)
P1 (± 0.1)
All dimensions are in mm.
12
4
8
1.5
1.5
5.5
4.5
2
End
Start
Top
No components
Components
No components
cover
tape
500mm min
Empty components pockets
saled with cover tape.
User direction of feed
26/29
500mm min
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
TO-220 TUBE SHIPMENT (no suffix)
A
Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
B
50
1000
532
5.5
31.4
0.75
All dimensions are in mm.
C
27/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
IPAK TUBE SHIPMENT (no suffix)
A
C
B
Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
All dimensions are in mm.
MECHANICAL POLARIZATION
28/29
75
3000
532
6
21.3
0.6
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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29/29