VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 ® “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNN3NV04 VNS3NV04 VND3NV04 RDS(on) Ilim Vclamp 120 mΩ 3.5 A 40 V 2 1 2 3 SO-8 SOT-223 VND3NV04-1 n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP n LOW CURRENT DRAWN FROM INPUT PIN n DIAGNOSTIC FEEDBACK THROUGH INPUT PIN n ESD PROTECTION 3 3 2 1 1 TO251 (IPAK) TO252 (DPAK) ORDER CODES: SOT-223 VNN3NV04 SO-8 VNS3NV04 TO-252 (DPAK) VND3NV04 TO-251 (IPAK) VND3NV04-1 n DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) n COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. BLOCK DIAGRAM DRAIN 2 Overvoltage Clamp INPUT 1 Gate Control Over Temperature Linear Current Limiter 3 SOURCE February 2003 FC01000 1/21 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 ABSOLUTE MAXIMUM RATING Symbol Parameter VDS VIN IIN RIN MIN ID IR VESD1 Drain-source Voltage (VIN=0V) Input Voltage Input Current Minimum Input Series Impedance Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5KΩ, C=100pF) Electrostatic Discharge on output pin only (R=330Ω, C=150pF) Total Dissipation at Tc=25°C Operating Junction Temperature Case Operating Temperature Storage Temperature VESD2 Ptot Tj Tc Tstg Value SO-8 DPAK/IPAK Internally Clamped Internally Clamped +/-20 220 Internally Limited -5.5 4000 SOT-223 16500 7 8.3 Internally limited Internally limited -55 to 150 35 SO-8 Package (*) 1 8 DRAIN DRAIN SOURCE DRAIN SOURCE 4 INPUT 5 DRAIN (*) For the pins configuration related to SOT-223, DPAK, IPAK see outlines at page 1. CURRENT AND VOLTAGE CONVENTIONS ID DRAIN IIN RIN INPUT SOURCE VIN 2/21 V V mA Ω A A V V CONNECTION DIAGRAM (TOP VIEW) SOURCE Unit VDS W °C °C °C VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 THERMAL DATA Symbol Parameter Rthj-case Rthj-lead Rthj-amb Thermal Resistance Junction-case}}} Thermal Resistance Junction-lead Thermal Resistance Junction-ambient (*) When MAX MAX MAX SOT-223 18 70(*) Value SO-8 DPAK 3.5 15 65(*) 54(*) IPAK 3.5 100 Unit °C/W °C/W °C/W mounted on a standard single-sided FR4 board with 50mm2 of Cu (at least 35 µm thick) connected to all DRAIN pins. ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified) OFF Symbol VCLAMP VCLTH VINTH IISS VINCL Parameter Drain-source Clamp Voltage Drain-source Clamp Threshold Voltage Input Threshold Voltage Supply Current from Input Pin Input-Source Clamp Voltage IDSS Zero Input Voltage Drain Current (VIN=0V) Symbol Parameter Test Conditions Min Typ Max Unit VIN=0V; ID=1.5A 40 45 55 V VIN=0V; ID=2mA 36 VDS=VIN; ID=1mA 0.5 VDS=0V; VIN=5V IIN=1mA IIN=-1mA VDS=13V; VIN=0V; Tj=25°C V 100 6 6.8 -1.0 2.5 V 150 µA 8 -0.3 30 VDS=25V; VIN=0V 75 V µA ON RDS(on) Static Drain-source On Resistance Test Conditions VIN=5V; ID=1.5A; Tj=25°C VIN=5V; ID=1.5A Min Typ Max 120 240 Unit mΩ 3/21 1 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified) DYNAMIC Symbol gfs (*) COSS Parameter Forward Transconductance Output Capacitance Test Conditions Min Typ Max Unit VDD=13V; ID=1.5A 5.0 S VDS=13V; f=1MHz; VIN=0V 150 pF SWITCHING Symbol td(on) tr td(off) tf td(on) tr td(off) tf Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time (dI/dt)on Turn-on Current Slope Qi Total Input Charge Test Conditions Min VDD=15V; ID=1.5A Vgen=5V; Rgen=RIN MIN=220Ω (see figure 1) VDD=15V; ID=1.5A Vgen=5V; Rgen=2.2 KΩ (see figure 1) VDD=15V; ID=1.5A Vgen=5V; Rgen=RIN MIN=220Ω VDD=12V; ID=1.5A; VIN=5V Igen=2.13mA (see figure 5) Typ 90 250 450 250 0.45 2.5 3.3 2.0 Max 300 750 1350 750 1.35 7.5 10.0 6.0 Unit ns ns ns ns µs µs µs µs 4.7 A/µs 8.5 nC SOURCE DRAIN DIODE Symbol VSD (*) trr Qrr IRRM Parameter Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions ISD=1.5A; VIN=0V ISD=1.5A; dI/dt=12A/µs Min VDD=30V; L=200µH Reverse Recovery Current (see test circuit, figure 2) Typ 0.8 107 37 Max 0.7 Unit V ns µC A PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified) Symbol Ilim tdlim Tjsh Tjrs Igf Eas Parameter Drain Current Limit Step Response Current Limit Test Conditions VIN=5V; VDS=13V VIN=5V; VDS=13V Overtemperature Shutdown Overtemperature Reset Fault Sink Current Single Pulse Avalanche Energy VIN=5V; VDS=13V; Tj=Tjsh starting Tj=25°C; VDD=24V VIN=5V Rgen=RIN MIN=220Ω; L=24mH (see figures 3 & 4) (*) Pulsed: Pulse duration = 300µs, duty cycle 1.5% 4/21 2 Min 3.5 Typ 5 Max 7 Unit A µs 10 150 175 200 °C 135 10 15 20 °C mA 100 mJ VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 PROTECTION FEATURES During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50KHz. The only difference from the user’s standpoint is that a small DC current IISS (typ. 100µA) flows into the INPUT pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current ID to Ilim whatever the INPUT pin voltages. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh. - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted when the chip temperature falls of about 15°C below shut-down temperature. - STATUS FEEDBACK: in the case of an overtemperature fault condition (Tj > Tjsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current Igf, the INPUT pin will fall to 0V. This will not however affect the device operation: no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current IISS. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit. 5/21 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 Fig.1: Switching Time Test Circuit for Resistive Load VD Rgen Vgen ID 90% tr tf 10% t Vgen td(on) td(off) t Fig.2: Test Circuit for Diode Recovery Times A A D I FAST DIODE OMNIFET S L=100uH B B 220Ω D Rgen Vgen VDD I OMNIFET S 8.5 Ω 6/21 1 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 Thermal Impedance for DPAK/IPAK Thermal Impedance for SOT-223 7/21 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 Fig. 3: Unclamped Inductive Load Test Circuits RGEN VIN PW Fig. 5: Input Charge Test Circuit VIN GEN ND8003 8/21 Fig. 4: Unclamped Inductive Waveforms VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 Source-Drain Diode Forward Characteristics Static Drain Source On Resistance Vsd (mV) Rds(on) (mohms) 1100 1000 1050 Tj=-40ºC 900 Vin=0V Vin=2.5V 1000 800 950 700 900 600 850 500 800 400 750 300 700 200 650 100 Tj=25ºC Tj=150ºC 600 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0.05 0.1 0.15 0.2 0.25 Id (A) 0.3 0.35 0.4 0.45 0.5 0.55 Id(A) Static Drain-Source On resistance Vs. Input Voltage Derating Curve Rds(on) (mohms) 300 275 250 Tj=150ºC 225 200 175 Id=3.5A Id=1A 150 Tj=25ºC 125 100 Tj=-40ºC 75 Id=3.5A Id=1A 50 Id=3.5A Id=1A 25 0 3 3.5 4 4.5 5 5.5 6 6.5 Vin(V) Static Drain-Source On resistance Vs. Input Voltage Transconductance Gfs (S) Rds(on) (mohms) 11 250 10 225 Vds=13V 9 Id=1.5A 200 Tj=-40ºC Tj=25ºC 8 175 Tj=150ºC 7 Tj=150ºC 150 6 125 5 100 4 3 75 Tj=25ºC 2 50 Tj=-40ºC 1 25 0 0 0 3 3.5 4 4.5 Vin(V) 5 5.5 6 6.5 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 Id (A) 9/21 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 Static Drain-Source On Resistance Vs. Id Transfer Characteristics Rds(on) (mohms) Idon (A) 250 6 225 5.5 Vin=5V Vds=13.5V 5 200 Tj=150ºC 4.5 175 4 Tj=150ºC 150 3.5 125 3 Tj=25ºC 100 Tj=-40ºC 2.5 2 75 1.5 50 Tj= - 40ºC Tj=25ºC 1 25 0.5 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 1.5 2 2.5 3 3.5 Id (A) 4 4.5 5 5.5 6 Vin (V) Turn On Current Slope Turn On Current Slope di/dt(A/usec) di/dt(A/us) 1.75 5 4.5 1.5 Vin=5V Vdd=15V Id=1.5A 4 3.5 Vin=3.5V Vdd=15V Id=1.5A 1.25 3 1 2.5 0.75 2 1.5 0.5 1 0.25 0.5 0 0 0 250 500 0 750 1000 1250 1500 1750 2000 2250 2500 250 500 750 1000 1250 1500 1750 2000 2250 2500 Rg(ohm) Rg(ohm) Turn off drain source voltage slope Input Voltage Vs. Input Charge Vin (V) dv/dt(V/usec) 9 300 275 8 Vds=1V Id=1.5A 7 Vin=5V Vdd=15V Id=1.5A 250 225 200 6 175 5 150 125 4 100 3 75 2 50 1 25 0 0 0 0 1 2 3 4 5 6 Qg (nC) 10/21 7 8 9 10 11 500 250 1000 750 1500 1250 Rg(ohm) 2000 1750 2500 2250 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 Turn Off Drain-Source Voltage Slope Capacitance Variations dv/dt(V/usec) C(pF) 300 350 275 Vin=3.5V Vdd=15V Id=1.5A 250 225 300 f=1MHz Vin=0V 200 250 175 150 200 125 100 150 75 50 100 25 0 0 500 1000 250 750 1500 1250 2000 1750 2500 50 2250 0 5 10 15 Rg(ohm) 20 25 30 35 Vds(V) Switching Time Resistive Load Switching Time Resistive Load t(usec) t(nsec) 4 900 800 3.5 td(off) Vdd=15V Id=1.5A Vin=5V 3 tr Vdd=15V Id=1.5A Rg=220ohm 700 tr 600 2.5 500 2 tf 400 1.5 td(off) 300 1 tf 200 td(on) 0.5 td(on) 100 0 0 500 250 1000 750 1500 1250 2000 1750 2500 0 2250 3.25 3.5 3.75 4 Rg(ohm) 4.25 4.5 4.75 5 5.25 Vin(V) Normalized On Resistance Vs. Temperature Output Characteristics Id (A) Rds(on) (mOhm) 5 4 Vin=5V 4.5 3.5 Vin=4V Vin=5V Id=1.5A 4 3 3.5 Vin=3V 3 2.5 2.5 2 2 1.5 1.5 1 1 0.5 0 0.5 0 1 2 3 4 5 Vds (V) 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 175 Tc )ºC) 11/21 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 Normalized Input Temperature Threshold Voltage Vinth (V) Vs. Normalized Current Temperature Vs. Junction Ilim (A) 10 2 1.8 9 Vds=Vin Id=1mA 1.6 7 1.2 6 1 5 0.8 4 0.6 3 0.4 2 0.2 1 0 0 -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) Tdlim(usec) 13 12.5 Vin=5V Rg=220ohm 12 11.5 11 10.5 10 9.5 9 8.5 8 7.5 7.5 10 12.5 15 17.5 20 Vdd(V) -50 -25 0 25 50 75 Tc (ºC) Step Response Current Limit 5 Vin=5V Vds=13V 8 1.4 12/21 Limit 22.5 25 27.5 30 32.5 100 125 150 175 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 TO-251 (IPAK) MECHANICAL DATA mm. DIM. MIN. inch TYP MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 B3 0.212 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 13/21 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 TO-252 (DPAK) MECHANICAL DATA DIM. mm. MIN. TYP MAX. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 B 0.64 0.90 B2 5.20 5.40 C 0.45 0.60 C2 0.48 0.60 D 6.00 6.20 D1 E 5.1 6.40 6.60 E1 4.7 e 2.28 G 4.40 4.60 H 9.35 10.10 L2 L4 0.8 0.60 R V2 Package Weight 1.00 0.2 0° 8° Gr. 0.29 P032P 14/21 1 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 SOT-223 MECHANICAL DATA mm. inch DIM. MIN. TYP A MAX. MIN. TYP. MAX. 1.8 0.071 B 0.6 0.7 0.85 0.024 0.027 0.033 B1 2.9 3 3.15 0.114 0.118 0.124 c 0.24 0.26 0.35 0.009 0.01 0.014 D 6.3 6.5 6.7 0.248 0.256 0.264 e 2.3 0.09 e1 4.6 0.181 E 3.3 3.5 3.7 0.13 0.138 0.146 H 6.7 7 7.3 0.264 0.276 0.287 V A1 10 (max) 0.02 0.1 0.0008 0.004 0046067 15/21 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 SO-8 MECHANICAL DATA mm. inch DIM. MIN. TYP A a1 MAX. TYP. 1.75 0.1 MAX. 0.068 0.25 a2 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M F 16/21 MIN. 0.6 0.023 8 (max.) VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 SOT-223 TAPE AND REEL SHIPMENT (suffix “13TR”) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 1000 1000 330 1.5 13 20.2 12.4 60 18.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 (± 0.1) P D (± 0.1/-0) D1 (min) F (± 0.05) K (max) P1 (± 0.1) 12 4 8 1.5 1.5 5.5 4.5 2 All dimensions are in mm. End Start Top No components Components No components cover tape 500mm min Empty components pockets saled with cover tape. 500mm min User direction of feed 17/21 1 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 SO-8 TUBE SHIPMENT (no suffix) B Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) C A 100 2000 532 3.2 6 0.6 All dimensions are in mm. TAPE AND REEL SHIPMENT (suffix “13TR”) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 12.4 60 18.4 All dimensions are in mm. TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 (± 0.1) P D (± 0.1/-0) D1 (min) F (± 0.05) K (max) P1 (± 0.1) All dimensions are in mm. 12 4 8 1.5 1.5 5.5 4.5 2 End Start Top No components Components No components cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 18/21 500mm min VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix) A 6 .7 1 .8 3 .0 1 .6 C 2 .3 6 .7 2 .3 B Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) 75 3000 532 6 21.3 0.6 All dimensions are in mm. TAPE AND REEL SHIPMENT (suffix “13TR”) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 16.4 60 22.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 (± 0.1) P D (± 0.1/-0) D1 (min) F (± 0.05) K (max) P1 (± 0.1) All dimensions are in mm. 16 4 8 1.5 1.5 7.5 6.5 2 End Start Top No components Components No components cover tape 500mm min Empty components pockets saled with cover tape. 500mm min User direction of feed 19/21 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 IPAK TUBE SHIPMENT (no suffix) A C B Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) All dimensions are in mm. 20/21 1 75 3000 532 6 21.3 0.6 VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2003 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 21/21