VNQ500PEP ® QUAD CHANNEL HIGH SIDE DRIVER TARGET SPECIFICATION TYPE VNQ500PEP RDS(on) 500 mΩ IOUT 0.35 A VCC 36V CMOS COMPATIBLE I/O’s CHIP ENABLE ■ JUNCTION OVERTEMPERATURE PROTECTION ■ CURRENT LIMITATION ■ SHORTED LOAD PROTECTION ■ UNDERVOLTAGE SHUTDOWN ■ PROTECTION AGAINST LOSS OF GROUND ■ VERY LOW STAND-BY CURRENT ■ ■ DESCRIPTION The VNQ500PEP is a monolithic device designed in STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active current limitation combined with latched thermal shutdown, protect the device against overload. Device automatically turns off in case of ground pin disconnection. PowerSSO-12 ORDER CODES PACKAGE TUBE T&R PowerSSO-12 VNQ500PEP VNQ500PEP13TR APPLICATION ■ Relay Driver ■ LED Driver ABSOLUTE MAXIMUM RATING Symbol VCC -VCC - IGND IOUT - IOUT IIN VESD Tj Tstg Parameter DC Supply voltage Reverse supply voltage DC Ground pin reverse current DC Output current Reverse DC output current DC Input current Electrostatic discharge (R=1.5KΩ; C=100pF) - I/On - OUTn & Vcc Junction operating temperature Storage temperature October 2003 - Revision 1.3 (Working document) Value 41 -0.3 - 250 Internally Limited -1 +/- 10 Unit V V mA A A mA 4000 V 5000 V Internally Limited - 55 to 150 °C °C 1/11 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. VNQ500PEP BLOCK DIAGRAM VCC UNDERVOLTAGE DETECTION VCC CLAMP CE GND I/O 1 CLAMP POWER OUTPUT 1 I/O 2 LOGIC OUTPUT 2 I/O 3 CURRENT LIMITER OUTPUT 3 I/O 4 JUNCTION TEMP. DETECTION OUTPUT 4 Same structure for all channels PIN DEFINITIONS AND FUNCTIONS Pin No TAB 7,12 1 2 3 4 5 6 8 9 10 11 2/11 1 Symbol VCC VCC GND CE I/O 1 I/O 2 I/O 3 I/O 4 OUTPUT 4 OUTPUT 3 OUTPUT 2 OUTPUT 1 Function Positive power supply voltage Positive power supply voltage Logic ground Chip Enable Input/Output of channel 1 Input/Output of channel 2 Input/Output of channel 3 Input/Output of channel 4 High-Side output of channel 4 High-Side output of channel 3 High-Side output of channel 2 High-Side output of channel 1 VNQ500PEP CONNECTION DIAGRAM (TOP VIEW) GND CE I/O1 I/O2 I/O3 I/O4 1 2 3 4 5 6 12 11 10 9 8 7 Vcc OUTPUT1 OUTPUT2 OUTPUT3 OUTPUT4 Vcc TAB = Vcc CURRENT AND VOLTAGE CONVENTIONS ICC VCC IINn I/On IOUTn OUTPUTn VOUTn ICE VCC CE GND VINn VCE IGND 3/11 VNQ500PEP THERMAL DATA Symbol Rthj-case Parameter Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient (*) Max Max Value 4.6 Unit °C/W 60 °C/W (*) When mounted on FR4 printed circuit board with 0.5 cm2 of copper area (at least 35µ thick) connected to all TAB pins. ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C, unless otherwise specified) POWER Symbol VCC(**) VUSD(**) VOV (**) RON IS Parameter Operating supply voltage Undervoltage shut-down Overvoltage shutdown On state resistance Supply current ILGND(**) Output current at turn-off IL(off)(**) Off state output current ILoff2(**) Off state output current Test Conditions Min 5.5 3 36 Typ 13 4 Max 36 5.5 IOUTn=0.25A; Tj=25°C 500 Unit V V V mΩ IOUTn=0.25A 1000 mΩ VCE=VI/On=0V; VCC=13V; Tcase=25°C 20 µA On state (all channels ON); VCC=13V 8 mA 1 mA 5 µA 1 µA Max Unit µs µs VCC=VCE=VI/On=VGND=13V VOUTn=0V VI/On=VOUTn=0V VI/On=0V, VOUTn=0V, VCC=13V; Tcase=25°C 0 (**) Per channel SWITCHING (VCC=13V) Symbol ton toff dVOUT/ dt(on) dVOUT/ dt(off) Parameter Turn-on time Turn-off time Turn-on voltage slope Turn-off voltage slope Test Conditions RL=52Ω from 80% VOUT (*) RL=52Ω to 10% VOUT (*) RL=52Ω from VOUT=1.3V to VOUT=10.4V (*) RL=52Ω from VOUT=11.7V to VOUT=1.3V (*) Min Typ 50 75 0.3 V/µs 0.3 V/µs (*) see fig.1a :switching time waveforms INPUT & CE PINS Symbol VINL IINL VINH IINH VI(hyst) Parameter I/O low level Low level I/O current I/O high level High level I/O current I/O hysteresis voltage Test Conditions VIN=1.25V Min Typ 1 3.25 VIN=3.25V IIN=1mA VICL I/O clamp voltage VOL I/O low level default detecIIN=1mA, latched thermal shutdown tion IIN=-1mA Max 1.25 10 0.5 6 6.8 8 -0.7 Unit V µA V µA V V V 0.5 V 4/11 1 VNQ500PEP ELECTRICAL CHARACTERISTICS (continued) PROTECTIONS Symbol TTSD Ilim Vdemag treset Parameter Junction shut-down temperature DC Short circuit current Turn-off output clamp voltage Thermal latch reset time Test Conditions VCC=13V; RLOAD=10mΩ IOUT=0.25 A; L=20mH Tj < TTSD (see figure 3 in waveforms) Min Typ Max Unit 150 175 200 °C 0.7 A 0.35 VCC-41 VCC-48 VCC-55 10 V µs 5/11 2 VNQ500PEP Switching Time Waveforms Fig. 1a : Turn-on & Turn-off ton toff VIN t VOUT 90% 80% dVOUT/dt(on) dVOUT/dt(off) tr 10% tf t Driving circuit MCOUTn MCU 6/11 R I/On OUTPUTn VNQ500PEP VNQ500PEP TRUTH TABLE CONDITIONS MCOUTn L H L H L H L H X Normal operation Current limitation Overtemperature Undervoltage Stand-by CE H H H H H H H H L I/On L H L H L L (latched) L H X OUTPUTn L H L H L L L L L ELECTRICAL TRANSIENT REQUIREMENTS ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 CLASS C E I II TEST LEVELS III IV -25 V +25 V -25 V +25 V -4 V +26.5 V -50 V +50 V -50 V +50 V -5 V +46.5 V -75 V +75 V -100 V +75 V -6 V +66.5 V -100 V +100 V -150 V +100 V -7 V +86.5 V I C C C C C C TEST LEVELS RESULTS II III C C C C C C C C C C E E Delays and Impedance 2 ms 10 Ω 0.2 ms 10 Ω 0.1 µs 50 Ω 0.1 µs 50 Ω 100 ms, 0.01 Ω 400 ms, 2 Ω IV C C C C C E CONTENTS All functions of the device are performed as designed after exposure to disturbance. One or more functions of the device is not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device. 7/11 VNQ500PEP APPLICATION SCHEMATIC +5V VCC Rprot CE Dld µC Rprot I/0n OUTPUT GND VGND GND PROTECTION REVERSE BATTERY NETWORK AGAINST Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1) RGND ≤ 600mV / (IS(on)max). 2) RGND ≥ (−VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the of the device’s datasheet. Power Dissipation in RGND (when VCC<0: during reverse battery situations) is: PD= (-VCC)2/RGND This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not common with the device ground then the RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output values. This shift will vary depending on many devices are ON in the case of several high side drivers sharing the same RGND. If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then the ST suggest to utilize Solution 2 (see below). Solution 2: A diode (DGND) in the ground line. A resistor (RGND=1kΩ) should be inserted in parallel to DGND if the device will be driving an inductive load. 8/11 1 RGND DGND This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network will produce a shift (j600mV) in the input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network. LOAD DUMP PROTECTION Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds VCC max DC rating. The same applies if the device will be subject to transients on the VCC line that are greater than the ones shown in the ISO T/R 7637/1 table. µC I/Os PROTECTION: If a ground protection network is used and negative transient are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent the µC I/Os pins to latch-up. The value of these resistors is a compromise between the leakage current of µC and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC I/Os. -VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax Calculation example: For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V 5kΩ ≤ Rprot ≤ 65kΩ. Recommended Rprot value is 10kΩ. VNQ500PEP Waveforms 1) NORMAL OPERATION CE MCOUTn I/On VOUTn 2) UNDERVOLTAGE CE VUSDhyst VCC VUSD MCOUTn I/On VOUTn 3) SHORTED LOAD OPERATION treset CE TTSD Tjn MCOUTn VOL I/On IOUTn 9/11 VNQ500PEP PowerSSO-12TM MECHANICAL DATA A 1.250 A1 0.000 A2 1.100 B 0.230 C 0.190 D 4.800 E 3.800 TYP 1.620 1.650 0.410 0.250 0.400 k 0º X 1.900 IN 0.250 L IM h 3.600 PR EL 10/11 5.000 4.000 0.800 5.800 ddd MAX. 0.100 e H Y RY mm. MIN. A DIM. 6.200 0.500 1.270 8º 2.500 4.200 0.100 VNQ500PEP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2003 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 11/11