PD54003 - PD54003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD5400 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. PD54003 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD54003’s superior linearity performance makes it an ideal solution for portable radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PowerSO-10RF (Formed Lead) ORDER CODE BRANDING XPD54003 PD54003 PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD54003S XPD54003S ABSOLUTE MAXIMUM RATINGS(TCASE = 25 OC) Symbol Parameter Value Unit V(BR)DSS Drain Source Voltage 25 V V GS Gate-Source Voltage ±20 V 4 A Power Dissipation (@ Tc = 70 C) 52.8 W Max. Operating Junction Temperature 165 0C -65 to 165 0C ID PDISS Tj TSTG Drain Current 0 Storage Temperature THERMAL DATA R th(j-c) May 2000 Junction-Case Thermal Resistance 1.8 0 C/W 1/10 PD54003 - PD54003S ELECTRICAL SPECIFICATION(TCASE = 25 0C) STATIC Symbol Parameter Min. Typ. Max. Unit IDSS VGS = 0 V V DS = 25 V 1 µA IGSS VGS = 20 V VDS = 0 V 1 µA V GS(Q) VDS = 10 V ID = 50 mA 5.0 V VDS(ON) VGS = 10 V ID = 1 A 1.3 V gFS VDS = 10 V ID = 1 A C ISS VGS = 0 V VDS = 7.5 V COSS VGS = 0 V C RSS VGS = 0 V 2.0 1.5 mho f = 1 MHz 59 pF VDS = 7.5 V f = 1 MHz 43 pF VDS = 7.5 V f = 1 MHz 4.0 pF DYNAMIC Symbol Parameter Min. Typ. Max. Unit POUT f = 500 MHz VDD = 7.5 V IDQ = 50 mA GPS f = 500 MHz VDD = 7.5 V POUT = 3 W IDQ = 50 mA 12 dB ηD f = 500 MHz VDD = 7.5 V POUT = 3 W IDQ = 50 mA 55 % f = 500 MHz VDD = 9.5 V ALL PHASE ANGLES POUT = 3 W IDQ = 50 mA LOAD Mismatch 3 W 20:1 VSWR PIN CONNECTION D SOURCE ZDL GATE DRAIN Typical Input Impedance Typical Drain Load Impedance G Zin SC15200 IMPEDANCE DATA PD54003S PD54003 2/10 S SC13140 Frequency MHz Zin Zdl Ω Frequency MHz Zin Zdl 520 1.993 - j1.098 2.564 + j0.656 520 1.534 - j2.104 2.524 + j2.369 500 1.553 - j1.251 2.661 + j0.139 500 1.209 - j2.451 3.192 + j3.147 480 2.245 - j0.077 3.436 + j1.013 480 1.400 - j3.986 2.805 + j2.724 Ω Ω Ω PD54003 - PD54003S TYPICAL PERFORMANCE Capacitance vs. Drain Voltage Drain Current vs. Gate Voltage 1000 8 7 100 Id, DRAIN CURRENT(A) C, CAPACITANCE (pF) f = 1MHz Ciss Coss 10 Crss Vds=10V 6 5 4 3 2 1 1 0 0 5 10 15 1 2 3 4 5 6 7 8 9 VGS, GATE-SOURCE VOLTAGE (V) VDD, DRAIN VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (NORMALIZED) Gate-Source Voltage vs. Case Temperature 1.06 1.04 1.02 1 ID =1.5A 0.98 ID= 2A ID =1 A 0.96 Vds=10V ID =0.5A 0.94 0.92 -25 ID = 0.25A 0 25 50 75 100 Tc, CASE TEMPERATURE (°C) 3/10 PD54003 - PD54003S TYPICAL PERFORMANCE PD54003 Output Power vs. Input Power Power Gain vs. Output Power 16 5 14 480MHz Pg, POWER GAIN (dB) Pout, OUTPUT POWER (W) 480MHz 4 520MHz 3 500MHz 2 Vdd=7.5V Idq=50 mA 1 500MHz 12 520MHz 10 Vdd=7.5V Idq=50mA 8 0 6 0 0.1 0.2 0.3 0.4 0 1 Pin, INPUT POWER (W) Drain Efficiency vs. Output Power 4 0 480MHz 70 520MHz 60 50 Rtl, RETURN LOSS(dB) Nd, DRAIN EFFICIENCY (%) 3 Return Loss vs. Output Power 80 500MHz 40 30 Vdd=7.5V Idq=50mA 20 10 -10 480MHz -20 -30 Vdd=7.5 V Idq=50mA 520MHz 500MHz -40 0 1 2 3 4 0 1 Pout, OUTPUT POWER (W) 2 3 Drain Efficiency vs. Bias Current 70 3.8 3.7 480MHz 500MHz Nd, DRAIN EFFICIENCY (%) 60 3.6 520MHz 3.5 480MHz 3.4 3.3 3.2 3.1 Pin=23.3dBm Vdd=7.5V 500MHz 50 520MHz 40 30 Pin=23.3 dBm Vdd=7.5V 20 3 2.9 10 0 100 200 300 400 500 600 IDQ, BIAS CURRENT (mA) 4/10 4 Pout, OUTPUT POWER (W) Output Power vs. Bias Current Pout, OUTPUT POWER (W) 2 Pout, OUTPUT POWER (W) 700 800 0 100 200 300 400 500 600 IDQ, BIAS CURRENT (mA) 700 800 PD54003 - PD54003S TYPICAL PERFORMANCE Output Power vs. Supply Voltage Drain Efficiency vs. Supply Voltage 5.5 70 480MHz 480MHz Nd, DRAIN EFFICIENCY (%) Pout, OUTPUT POWER (W) 5 4.5 500MHz 4 3.5 520MHz 3 2.5 Pin=23.3dBm Idq=50mA 2 60 500MHz 50 520MHz 40 Pin=23.3dBm Idq=50mA 30 20 1.5 5 6 7 8 9 5 10 6 7 Output Power vs. Gate-Source Voltage 9 10 PD54003S Output Power vs. Input Power 5 5 480MHz 4 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 8 VDD, SUPPLY VOLTAGE (V) VDD, SUPPLY VOLTAGE (V) 3 520MHz 500MHz 2 1 Pin=23.3dBm Vdd=7.5V 0 480MHz 4 500MHz 520MHz 3 2 1 Vdd=7.5V Idq=50mA 0 0 1 2 3 4 0 0.1 0.2 VGS, GATE-SOURCE VOLTAGE (V) 0.3 0.4 0.5 Pin, INPUT POWER (W) Power Gain vs. Output Power Drain Efficiency vs. Output Power 70 16 520MHz 480MHz 60 12 Nd, EFFICIENCY (%) Pg, POWER GAIN (dB) 14 500MHz 520MHz 10 8 500MHz 50 480MHz 40 30 20 Vdd=7.5V Idq=50mA 6 Vdd=7.5 V Idq=50mA 10 0 1 2 3 Pout, OUTPUT POWER (W) 4 0 1 2 3 4 Pout, OUTPUT POWER (W) 5/10 PD54003 - PD54003S TYPICAL PERFORMANCE Return Loss vs. Output Power Output Power vs. Bias Current 0 3.5 520MHz Pout, OUTPUT POWER (W) Rtl, RETURN LOSS (dB) 3.4 -10 500MHz 520MHz -20 480MHz -30 Vdd=7.5V Idq=50 mA 3.3 500MHz 3.2 3.1 3 480MHz 2.9 2.8 Pin=22dBm Vdd=7.5V 2.7 -40 2.6 0 1 2 3 4 0 100 200 Pout, OUTPUT POWER (W) 300 400 500 600 700 800 IDQ, BIAS CURRENT(mA) Drain Efficency vs. Bias Current Output Power vs. Supply Voltage 60 6 50 520MHz Pout, OUTPUT POWER (W) Nd, DRAIN EFFICIENCY(%) 500MHz 480MHz 40 30 20 Pin=22dBm Vdd=7.5V 10 5 480MHz 520MHz 500MHz 4 3 2 Pin=22dBm Idq=50mA 1 0 100 200 300 400 500 600 700 800 5 6 7 IDQ, BIAS CURRENT (mA) Drain Efficency vs. Supply Voltage 10 4 Pout, OUTPUT POWER (W) 480MHz 60 500MHz 50 520MHz 40 480MHz 3 500MHz 520 MHz 2 1 Pin= 22dBm Vdd= 7.5V Pin=22dBm Idq=50mA 0 30 5 6 7 8 VDD, SUPPLY VOLTAGE (V) 6/10 9 Output Power vs. Gate-Source Voltage 70 Nd, DRAIN EFFICIENCY (%) 8 VDD, SUPPLY VOLTAGE (V) 9 10 0 1 2 3 VGS, GATE-SOURCE VOLTAGE (V) 4 PD54003 - PD54003S TEST CIRCUIT SCHEMATIC TEST CIRCUIT COMPONENT PART LIST B1,B2 SHORT FERRITE BEAD, FAIR RITE PRODUCTS (2743021446) R3 15 Ω, 0805 CHIP RESISTOR C1,C13 240pF, 100 mil CHIP CAPACITOR R4 33 KΩ, 1/8 W RESISTOR C2,C3,C4,C10, C11,C12 0 TO 20pF TRIMMER CAPACITOR Z1 0.175” X 0.080” MICROSTRIP C5 130pF, 100 mil CHIP CAP Z2 1.049” X 0.080” MICROSTRIP C6,C17 120pF, 100 mil CHIP CAP Z3 0.289” X 0.080” MICROSTRIP C7,C14 10µF, 50V ELECTROLYTIC CAPACITOR Z4 0.026” X 0.080” MICROSTRIP C8,C15 1,200pF, 100 mil CHIP CAPACITOR Z5 0.192” X 0.223” MICROSTRIP C9,C16 0.1 F, 100 mil CHIP CAPACITOR Z6,Z7 0.260” X 0.223” MICROSTRIP L1 55.5 Nh, 5 TURN, COILCRAFT Z8 0.064” X 0.080” MICROSTRIP N1,N2 TYPE N FLANGE MOUNT Z9 0.334” X 0.080” MICROSTRIP R1 15 Ω, 0805 CHIP RESISTOR Z10 0.985” X 0.080” MICROSTRIP R2 1,0 KΩ, 1/8 W RESISTOR Z11 0.472” X 0.080” MICROSTRIP ROGER, ULTRA LAM 2000 BOARD ε THK 0.030”, r = 2.55 2oz. ED Cu 2 SIDES. 7/10 PD54003 - PD54003S TEST CIRCUIT 4 inches TEST CIRCUIT PHOTOMASTER 6.4 inches 8/10 PD54003 - PD54003S PowerSO-10RF (Straight Lead) MECHANICAL DATA PowerSO-10RF (Formed Lead) MECHANICAL DATA 9/10 PD54003 - PD54003S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. N o license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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