STMICROELECTRONICS XSD57120

SD57120

RF POWER TRANSISTORS
The LdmoST FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
ν
ν
ν
ν
ν
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION,
PUSH-PULL
POUT = 120 W with 13 dB gain @ 960 MHz
BeO FREE PACKAGE
INTERNAL INPUT MATCHING
DESCRIPTION
The SD57120 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57120 is designed for high gain
and broadband performance operating in
common source mode at 28V. Its internal
matching makes it ideal for base station
applications requiring high linearity.
M252
epoxy sealed
ORDER CODE
BRANDING
SD57120
XSD57120
PIN CONNECTION
1. Drain
2. Drain
3. Source
4. Gate
5. Gate
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)
Symbol
Parameter
Value
Uni t
V (BR)DSS
Drain Source Voltage
65
V
V GS
Gate-Source Voltage
± 20
V
ID
P DI SS
Tj
T STG
Drain Current
14
A
Power Dissipation (@ T c= 70 o C)
236
W
Max. O perating Junction Temperature
200
o
C
-65 to 150
o
C
Storage Temperature
THERMAL DATA
R th (j-c)
March 2000
Junction-Case Thermal Resistance
0.55
o
C/W
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SD57120
ELECTRICAL SPECIFICATION (Tcase = 25 oC)
STATIC (Per Section)
Symb ol
Parameter
Min.
65
Typ .
Max.
Un it
V (BR)DSS
V GS = 0V
I DS = 10 mA
I DSS
V GS = 0V
V DS = 28 V
1
µA
I GSS
V GS = 20V
V DS = 0 V
1
µA
V
V GS(Q)
V DS = 28V
I D = 100 mA
V DS( ON)
V GS = 10V
ID = 3 A
0.7
G FS
V DS = 10V
ID = 3 A
3
mho
3.0
5.0
V
0.8
V
C I SS *
V GS = 0V
V DS = 28 V
f = 1 MHz
175
pF
C OSS
V GS = 0V
V DS = 28 V
f = 1 MHz
44
pF
C RSS
V GS = 0V
V DS = 28 V
f = 1 MHz
1.7
pF
* Includes Internal Input Moscap.
DYNAMIC
Symb ol
Parameter
P OUT
V DD = 28V
f = 960 MHz
G PS
V DD = 28 V
ηD
V DD = 28 V
Min.
Max.
Un it
I DQ = 800 mA
120
P out = 120 W
IDQ = 800 mA
13
P out = 120W
I DQ = 800 mA
50
%
10:1
VSW R
Load
f = 960 MHz V DD = 28 V
Mismatch ALL PHASE ANGLES
Po ut = 120 W
IDQ = 800 mA
IMPEDANCE DATA
FREQ .
Z IN (Ω)
Z DL (Ω)
945 MHz
3.9 + j 4.9
3.6 - j 5.1
960 MHz
4.1 - j 4.6
3.24 - j 4.74
980 MHz
3.9 + j 5.2
3.27 - j 6.9
Measured gate to gate and drain to drain respectively.
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Typ .
W
14
dB
SD57120
TYPICAL PERFORMANCE
Output Power vs. Input Power
Power Gain and Efficiency vs. Output Power
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SD57120
960 MHz Test Circuit Schematic
+
+
C17
L4
+
R5
C12
C9
C6
960 MHz Test Circuit Component Part List
4/7
C8
C19
C22
SD57120
960 MHz Production Test Fixture
C29
C20
BF6
R6
C27
BF4
C11
C21
C10
TL1
C31
C33
R4
BF1
C7
C14
C35
L3
C5
L2
C15
C16
BALUN2
C18
R1
C2
C25
C23
C3
R2
C1
C24
C17
C4
L1
BALUN1
C13
C34
C6
L4
C8
TL2
BF2
C9
C19
C22
C12
R5
BF3
BF5
C26
R3
C32
C28
C30
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SD57120
M252 (.400 X .800 4L BAL N/HERM W/FLG) MECHANICAL DATA
mm
DIM.
MIN.
A
TYP.
8.13
B
inch
MAX.
MIN.
8.64
0.320
10.80
MAX.
0.340
0.425
C
3.00
3.30
0.118
0.130
D
9.65
9.91
0.380
0.390
E
2.16
2.92
0.085
0.115
F
21.97
22.23
0.865
0.875
G
27.94
1.100
H
33.91
34.16
1.335
1.345
I
0.10
0.15
0.004
0.006
J
1.52
1.78
0.060
0.070
K
2.36
2.74
0.093
0.108
L
4.57
5.33
0.180
0.210
M
9.96
10.34
0.392
0.407
N
21.64
22.05
0.852
0.868
Controlling dimension : Inches
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TYP.
1022783C
SD57120
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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