Z00607MA Z00607DA ® SENSITIVE GATE TRIACS A1 A2 FEATURES G IT(RMS) = 0.8A VDRM = 400V and 600V IGT = 5mA DESCRIPTION A1 The Z006607xA triacs are intended for general applications where high gate sensitivity is required. G A2 TO92 (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM I2t Tstg Tj Tl Parameter Value Unit Tl= 50 °C 0.8 A tp = 8.3 ms 10.5 A tp = 10 ms 10 Non repetitive surge peak on-state current (Tj initial = 110°C, full cycle) F = 60Hz 8 I2t Value for fusing tp = 10 ms 0.5 A2s - 40, + 150 - 40, + 110 °C 260 °C RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) Storage and operating junction temperature range Maximum lead temperature for soldering during 10s Symbol VDRM VRRM Parameter Repetitive peak off-state voltage Tj = 110°C May 1999 - Ed: 1 Z00607xA D M 400 600 Unit V 1/4 Z00607DA / Z00607MA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient 150 °C/W Rth(j-l) Junction to lead 60 °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 0.1 W PGM = 2 W (tp = 20 µs) IGM = 1 A (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol Test Conditions Sensitivity Quadrant 07 Unit IGT VD=12V (DC) RL=140Ω Tj= 25°C I-II-III IV MAX 7 VGT VD=12V (DC) RL=140Ω Tj= 25°C I-II-III-IV MAX 1.5 V VGD VD=VDRM RL=3.3kΩ Tj= 110°C I-II-III-IV MIN 0.2 V tgt VD=VDRM IG = 25mA IT = 1.0A dIG/dt = 0.25A/µs Tj= 25°C I-II-III-IV TYP 2 µs IH * IT= 200 mA Gate open Tj= 25°C MAX 5 mA IG= 1.2 IGT Tj= 25°C I-III-IV MAX 10 mA II MAX 20 MAX 1.5 V IL VTM * IDRM IRRM dV/dt * (dV/dt)c * ITM= 1.1A tp= 380µs Tj= 25°C MAX 5 mA Tj= 25°C MAX 10 µA Tj= 110°C MAX 0.1 mA VD=67%VDRM Gate open Tj= 110°C MIN 10 V/µs (dI/dt)c = 0.35 A/ms Tj= 110°C MIN 1.5 V/µs VD = VDRM VR = VRRM * For either polarity of electrode A2 voltage with reference to electrode A1 Fig 1: Maximum power dissipation versus RMS on-state current. P(W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 α=30° 0.1 0.0 0.0 0.1 2/4 Fig 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tlead). P(W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 α=180° α=120° α=90° α=60° 180° α α IT(RMS)(A) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Tlead (°C) 50 Rth(j-l) 70 Rth(j-a) 90 α=180° 0 Tamb(°C) 10 20 30 40 50 60 70 80 90 100 110 110 Z00607DA / Z00607MA Fig 3: RMS on-state current versus ambient temperature. Fig 4: Relative variation of thermal impedance junction to ambient versus pulse duration. IT(RMS)(A) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 K=[Zth(j-a)/Rth(j-a)] 1.00 α=180° Rth(j-a)=Rth(j-l) 0.10 Rth(j-a)=150°C/W tp(s) Tamb(°C) 0 10 20 30 40 50 60 70 80 90 100 110 Fig 5: Relative variation of gate trigger current and holding current versus junction temperature (typical values). 0.01 1E-3 1.5 IH 1.0 0.5 Tj(°C) -20 0 20 1E+0 1E+1 1E+2 5E+2 ITSM(A) IGT 0.0 -40 1E-1 Fig 6: Non repetitive surge peak on-state current versus number of cycles. IGT,IH[Tj] / IGT,IH[Tj=25°C] 2.5 2.0 1E-2 40 60 80 100 120 Fig 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. 9 8 7 6 5 4 3 2 1 0 Tj initial=25°C F=50Hz Number of cycles 1 10 100 1000 Fig 8: On-state characteristics (maximum values). ITM(A) ITSM(A),I²t(A²s) 10.0 50.0 Tj initial=25°C Tj max.: Vto= 0.95 V Rd= 420 mΩ ITSM 10.0 Tj=Tj max. 1.0 1.0 I²t Tj=25°C tp(ms) 0.1 1 2 VTM(V) 5 10 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3/4 Z00607DA / Z00607MA PACKAGE MECHANICAL DATA TO92 (Plastic) DIMENSIONS REF. A A 1.35 0.053 B C 4.70 C F Inches Typ. Min. Max. Typ. Min. Max. a B Millimeters D E 2.54 0.185 0.100 D 4.40 0.173 E 12.70 0.500 F 3.70 0.146 a 0.45 0.017 Ordering type Marking Package Weight Base qty Delivery mode Z00607DA 1BA2 Z0607DA TO92 0.2g. 2500 Bulk Z00607MA 1BA2 Z0607MA TO92 0.2g. 2500 Bulk Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 4/4