HGT1Y40N60B3D Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49052. The diode used in anti-parallel with the IGBT is the development type TA49063. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Symbol C G E Features • 70A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . . 100ns at TJ = 150oC • Short Circuit Rating Formerly Developmental Type TA49365. • Low Conduction Loss Ordering Information PART NUMBER HGT1Y40N60B3D PACKAGE TO-264 BRAND Packaging JEDEC STYLE TO-264 G40N60B3D E C NOTE: When ordering, use the entire part number. G COLLECTOR (FLANGE) FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2001 Fairchild Semiconductor Corporation HGTG40N60B3 Rev. B HGT1Y40N60B3D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGT1Y40N60B3D UNITS 600 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 70 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 40 A Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous Average Diode Forward Current at 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) 40 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 330 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A at 600V 290 W 2.33 W/oC Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 2 µs Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, R G = 3Ω. S Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current SYMBOL BVCES ICES TEST CONDITIONS IC = 250µA, VGE = 0V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA VCE(SAT) VGE(TH) TYP MAX UNITS 600 - - V TC = 25oC TC = 150oC TC = 25oC - - 100 µA - - 6.0 mA - 1.4 2.0 V TC = 150oC - 1.5 2.3 V 3.0 4.8 6.0 V - - ±100 nA VCE = 480V 200 - - A VCE = 600V 100 - - A IC = IC110, VCE = 0.5 BVCES - 7.5 - V IC = IC110, VCE = 0.5 BVCES VGE = 15V - 250 330 nC VGE = 20V - 335 435 nC - 47 - ns - 35 - ns - 170 200 ns - 50 100 ns - 1050 1200 µJ - 800 1400 µJ VCE = BVCES VCE = BVCES Collector to Emitter Saturation Voltage MIN IC = IC110, VGE = 15V IC = 250µA, VCE = VGE IGES VGE = ±20V SSOA TJ = 150oC RG = 3Ω VGE = 15V L = 100µH Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time VGEP QG(ON) td(ON)I trI td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 1) EOFF ©2001 Fairchild Semiconductor Corporation IGBT and Diode Both at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 3Ω L = 100µH Test Circuit (Figure 19) HGTG40N60B3 Rev. B HGT1Y40N60B3D Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 1) EOFF Diode Forward Voltage VEC Diode Reverse Recovery Time trr TEST CONDITIONS MIN TYP MAX UNITS - 47 - ns - 35 - ns - 285 375 ns - 100 175 ns - 1850 - µJ - 2000 - µJ IEC = 40A - 2.0 2.5 V IEC = 40A, dIEC/dt = 100A/µs - 50 65 ns IEC = 1.0A, dIEC/dt = 100A/µs - 38 40 ns IGBT and Diode Both at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 3Ω L = 100µH Test Circuit (Figure 19) Thermal Resistance Junction To Case RθJC IGBT - - 0.43 oC/W Thermal Resistance Junction To Case RθJC Diode - - 1.2 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. (Unless Otherwise Specified) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves ICE , DC COLLECTOR CURRENT (A) 100 VGE = 15V 80 60 PACKAGE LIMITED 40 20 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE ©2001 Fairchild Semiconductor Corporation 150 250 TJ = 150oC, RG = 3Ω, VGE = 15V 200 150 100 50 0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTG40N60B3 Rev. B HGT1Y40N60B3D TJ = 150oC, RG = 3Ω, L = 100µH, V CE = 480V 100 10 TC VGE 75 oC 75oC 110oC 110oC 15V 10V 15V 10V fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF ) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.43 oC/W, SEE NOTES 1 10 20 40 60 80 100 18 900 VCE = 360V, RG = 3Ω, TJ = 125oC 16 800 ISC 14 12 600 10 500 tSC 8 300 4 10 TC = 150 oC TC = 25oC 50 0 1 2 3 4 5 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE <0.5%, VGE = 10V PULSE DURATION = 250µs 0 DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250µs 150 TC = -55 oC TC = 150 oC 100 TC = 25 oC 50 0 0 1 3 4 8 RG = 3Ω, L = 100µH, VCE = 480V EOFF, TURN-OFF ENERGY LOSS (mJ) EON , TURN-ON ENERGY LOSS (mJ) 2 FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE 20 TJ = 25 oC, VGE = 10V TJ = 150oC, VGE = 10V TJ = 150 oC, VGE = 15V 8 200 15 14 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE 12 13 200 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 16 12 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 200 100 11 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT TC = -55oC 400 6 ICE , COLLECTOR TO EMITTER CURRENT (A) 150 700 ISC, PEAK SHORT CIRCUIT CURRENT (A) (Unless Otherwise Specified) (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX, OPERATING FREQUENCY (kHz) Typical Performance Curves 4 TJ = 25oC, VGE = 15V 0 RG = 3Ω, L = 100µH, VCE = 480V 6 TJ = 150oC; VGE = 10V AND 15V 4 2 TJ = 25oC; VGE = 10V AND 15V 0 20 40 60 80 100 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 20 40 60 80 100 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT HGTG40N60B3 Rev. B HGT1Y40N60B3D Typical Performance Curves (Unless Otherwise Specified) (Continued) 90 600 RG = 3Ω, L = 100µH, VCE = 480V 80 500 TJ = 25oC, VGE = 10V 70 trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) RG = 3Ω, L = 100µH, VCE = 480V TJ = 150oC, VGE = 10V 60 TJ = 25oC, VGE = 15V 50 TJ = 150 oC, VGE = 15V 40 40 60 400 TJ = 150 oC, VGE = 10V 300 200 TJ = 25 oC AND 150oC, VGE = 10V AND 15V 100 30 20 TJ = 25 oC, VGE = 10V 80 0 100 20 FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 80 100 180 RG = 3Ω, L = 100µH, VCE = 480V RG = 3Ω, L = 100µH, VCE = 480V TJ = 150oC, VGE = 15V 250 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 60 FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 300 TJ = 150 oC, VGE = 10V 200 TJ = 25oC, VGE = 15V 150 140 TJ = 150oC, VGE = 10V AND 15V 100 60 TJ = 25 oC, VGE = 10V AND 15V TJ = 25 oC, VGE = 15V 100 20 40 60 80 20 100 20 ICE , COLLECTOR TO EMITTER CURRENT (A) 15 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE = <0.5%, VCE = 10V PULSE DURATION = 25µs 160 120 TC = 25oC 40 TC = 150oC 60 80 100 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT 200 80 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) 40 I CE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) TC = -55oC Ig(REF) = 3.255mA, RL = 7.5Ω, TC = 25 oC 12 VCE = 400V VCE = 600V 9 6 VCE = 200V 3 0 0 4 5 6 7 8 9 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC ©2001 Fairchild Semiconductor Corporation 10 0 50 100 150 200 250 300 QG, GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORM HGTG40N60B3 Rev. B HGT1Y40N60B3D Typical Performance Curves (Unless Otherwise Specified) (Continued) 60 200 50 tr , RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) TC = 25oC, dIEC/dt = 100A/µs 100oC 10 150 oC 1 0 25oC trr 40 30 ta 20 tb 10 0 0.5 1.0 1.5 2.0 VEC , FORWARD VOLTAGE (V) 2.5 3.0 1 FIGURE 15. VfDIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP 5 10 IEC , FORWARD CURRENT (A) 30 FIGURE 16. RECOVERY TIMES vs FORWARD CURRENT 14 FREQUENCY = 400kHz C, CAPACITANCE (nF) 12 CIES 10 8 6 4 COES 2 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) ZθJC , NORMALIZED THERMAL IMPEDANCE FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 100 0.5 0.2 10 -1 0.1 0.05 t1 0.02 PD DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X R θJC) + TC 0.01 SINGLE PULSE 10 -2 10-5 10-4 10-3 10-2 10-1 t2 100 10 1 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 18. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE ©2001 Fairchild Semiconductor Corporation HGTG40N60B3 Rev. B HGT1Y40N60B3D Test Circuit and Waveform L = 100µµH 90% RHRP3060 10% VGE EON EOFF RG = 3Ω VCE + - 90% VDD = 480V ICE 10% td(OFF)I tfI trI td(ON)I FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation FIGURE 20. SWITCHING TEST WAVEFORM HGTG40N60B3 Rev. B HGT1Y40N60B3D Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 10. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of V GEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 20. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed P D . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (V CE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 20. EON is the integral of the instantaneous power loss (ICE x V CE) during turn-on and E OFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2001 Fairchild Semiconductor Corporation HGTG40N60B3 Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4