BPW41N Silicon PIN Photodiode Description BPW41N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters (l p = 950 nm). The large active area combined with a flat case gives a high sensitivity at a wide viewing angle. Features D D D D D D D Large radiant sensitive area (A=7.5 mm2) Wide angle of half sensitivity ϕ = ± 65° High radiant sensitivity Fast response times 94 8480 Small junction capacitance Plastic case with IR filter (l=950 nm) Suitable for near infrared radiation Applications High speed photo detector Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 Test Conditions Tamb t x 25 °C x5s Symbol VR PV Tj Tstg Tsd RthJA Value 60 215 100 –55...+100 260 350 Unit V mW °C °C °C K/W 1 (5) BPW41N Basic Characteristics Tamb = 25_C Parameter Breakdown Voltage Reverse Dark Current Diode Capacitance p Test Conditions IR = 100 mA, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, l = 950 nm Ee = 1 mW/cm2, l = 950 nm Ee = 1 mW/cm2, l = 950 nm Ee = 1 mW/cm2, l = 950 nm Ee = 1 mW/cm2, l = 950 nm, VR = 5 V Open Circuit Voltage Temp. Coefficient of Vo Short Circuit Current Temp. Coefficient of Ik Reverse Light Current Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Noise Equivalent Power Rise Time Fall Time Symbol V(BR) Iro CD CD Vo TKVo Ik TKIk Ira Min 60 43 ϕ Max 2 70 25 350 –2.6 38 0.1 45 30 NEP tr tf Unit V nA pF pF mV mV/K mA %/K mA 40 ±65 950 870...1050 4x10–14 100 100 lp l0.5 VR=10V, l=950nm VR=10V, RL=1kW, l=820nm VR=10V, RL=1kW, l=820nm Typ deg nm nm W/√ Hz ns ns Typical Characteristics (Tamb = 25_C unless otherwise specified) I ra rel – Relative Reverse Light Current I ro – Reverse Dark Current ( nA ) 1000 100 10 VR=10V 1 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 1. Reverse Dark Current vs. Ambient Temperature 2 (5) VR=5V 1.2 l=950nm 1.0 0.8 0.6 20 94 8403 1.4 0 94 8409 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 2. Relative Reverse Light Current vs. Ambient Temperature TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 BPW41N S ( l ) rel – Relative Spectral Sensitivity Ira – Reverse Light Current ( m A ) 1000 100 10 VR=5V l=950nm 1 0.1 0.01 0.1 Ee – Irradiance ( 94 8414 mW / cm2 ) 1.0 0.8 0.6 0.4 0.2 0 750 10 1 1.2 850 Figure 6. Relative Spectral Sensitivity vs. Wavelength 0° 100 S rel – Relative Sensitivity Ira – Reverse Light Current ( m A ) 1 mW/cm2 0.5 mW/cm2 l=950nm 0.2 mW/cm2 10 0.1 mW/cm2 0.05 mW/cm2 1150 1050 l – Wavelength ( nm ) 94 8408 Figure 3. Reverse Light Current vs. Irradiance 950 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.02 mW/cm2 1 0.1 1 10 100 VR – Reverse Voltage ( V ) 94 8415 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8406 Figure 4. Reverse Light Current vs. Reverse Voltage Figure 7. Relative Radiant Sensitivity vs. Angular Displacement 80 CD – Diode Capacitance ( pF ) E=0 f=1MHz 60 40 20 0 0.1 94 8407 1 10 100 VR – Reverse Voltage ( V ) Figure 5. Diode Capacitance vs. Reverse Voltage TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 3 (5) BPW41N Dimensions in mm 96 12195 4 (5) TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 BPW41N Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 TELEFUNKEN Semiconductors Rev. A2, 15-Jul-96 5 (5)