CNY21N Optocoupler with Phototransistor Output Description The CNY21N consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4-lead plastic dual inline package. The single components are mounted on one leadframe in the opposite position, providing a fixed distance between input and output for highest safety requirements of > 3 mm. 95 10533 Application Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): D For application class I - IV at mains voltage ≤ 300 V D For application class I - IV at mains voltage ≤ 600 V D For application class I - III at mains voltage ≤ 1000 V according, to VDE 0884, table 2, suitable for: Switch-mode power supplies, computer peripheral interface, microprocessor system interface, line receiver. These couplers perform safety functions according to the following equipment standards: D D D D D D Optocoupler providing protective separation VDE 0804 Telecommunication apparatus and data processing VDE 0805/IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) VDE 0860/lEC 65 Safety for mains operated electronic and related household apparatus VDE 0700/IEC 335 Household equipment VDE 0160 Electronic equipment for electrical power installation VDE 0750/IEC 601 Medical equipment TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 Pin Connection A (+) C C (–) E 95 10850 D VDE 0884 1 (10) CNY21N Features According to VDE 0884 D Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 2.8 kV peak D Rated isolation voltage (RMS includes DC) VIOWM = 1000 VRMS (1450 V peak) D D D D D Thickness through insulation > 3 mm Isolation materials according to UL 94 Pollution degree 2 (DIN/VDE 0110) Climatic classification 55/085/21 (IEC 68 part 1) Further approvals: BS 415, BS 7002, SETI: IEC 950, UL 1577: File no: E 76222 D Special construction: therefore extra low coupling D Rated recurring peak voltage (repetitive) capacity of typical 0.3 pF, high Common Mode Rejection VIORM = 1000 VRMS D Creeping current resistance according to D Low temperature coefficient of CTR D Current Transfer Ratio (CTR) of typical 60% VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 Absolute Maximum Ratings Input (Emitter) Parameters Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions tp ≤ 10 ms Tamb ≤ 25°C Symbol VR IF IFSM Ptot Tj Value 5 50 1.5 120 100 Unit V mA A mW °C Symbol VCEO VECO IC ICM Ptot Tj Value 32 5 50 100 130 100 Unit V V mA mA mW °C Symbol VIO Ptot Tamb Tstg Tsd Value 8.2 250 –55 to +85 –55 to +100 260 Unit kV mW °C °C °C Output (Detector) Parameters Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameters AC isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature 2 (10) Test Conditions Tamb ≤ 25°C 2 mm from case t ≤ 10 s TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 CNY21N Maximum Safety Ratings 1) (according to VDE 0884) Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 120 Unit mA Test Conditions Tamb ≤ 25°C Symbol Psi Value 250 Unit mW Test Conditions Symbol VIOTM Tsi Value 8 180 Unit kV °C Output (Detector) Parameters Power dissipation Coupler Parameters Rated impulse voltage Safety temperature 1) This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Derating Diagram 250 225 Psi (mW) mA ( mA ) 200 175 150 125 100 75 Isi (mA) 50 25 0 0 95 10888 25 50 75 100 125 150 175 200 Tamb ( °C ) TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 3 (10) CNY21N Electrical Characteristics Tamb = 25°C Input (Emitter) Parameters Forward voltage Breakdown voltage Junction capacitance Test Conditions IF = 50 mA IR = 100 mA VR = 0, f = 1 MHz Symbol VF V(BR) Cj Min. Test Conditions IC = 1 mA Symbol V(BR)CEO Min. 32 IE = 100 mA V(BR)ECO 5 Typ. 1.25 Max. 1.6 Unit V V pF Max. Unit V 5 50 Output (Detector) Parameters Collector emitter breakdown voltage Emitter collector breakdown voltage Collector emitter cut-off current VCE = 20 V, If = 0 Typ. V ICEO 200 nA Max. Unit kV 0.3 V Coupler Parameters AC isolation test voltage (RMS) Collector emitter saturation voltage Cut-off frequency Coupling capacitance IC/IF 4 (10) Test Conditions f = 50 Hz, t = 1 s Symbol VIO Min. 8.2 IF = 10 mA, IC = 1 mA VCEsat VCE = 5 V, IF = 5 mA, RL = 100 W f = 1 MHz IF = 10 mA, VCE = 5 V fc 170 kHZ Ck CTR 0.3 0.6 pF 0.25 Typ. TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 CNY21N Switching Characteristics (Typical Values) VS = 5 V Type yp td[ms] 2.6 CNY21N IF tr[ms] 2.4 RL = 100 W (see figure 1) RL = 1 kW (see figure 2) ton[ms] ts[ms] tf[ms] toff[ms] IC[mA] ton[ms] toff[ms] IF[mA] 5.0 0.3 2.7 3.0 5 11 13.5 20 +5V IF 0 IC = 5 mA; Adjusted through input amplitude R G = 50 W tp T = 0.01 t p = 50 ms Channel I Oscilloscope Channel II 50 W 100 W RL CL w 1 MW v 20 pF 95 10900 Figure 1. Test circuit, non-saturated operation IF +5V IF = 20 mA 0 IC R G = 50 W tp T = 0.01 t p = 50 ms Channel I Oscilloscope Channel II 50 W 1 kW RL CL w 1 MW v 20 pF 95 10901 Figure 2. Test circuit, saturated operation TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 5 (10) CNY21N Insulation Rated Parameters (according to VDE 0884) Parameters Routine test Partial discharge Lot test (sample test) test voltage Test Conditions 100%, ttest = 1 s tTr = 10 s, ttest t t = 60 s (see figure 3) VIO = 500 V VIO = 500 V, Tamb = 100°C VIO = 500 V, Tamb = 180°C Insulation resistance Symbol Vpd VIOTM Min. 2.8 8 Typ. Max. Unit kV kV Vpd 2.2 kV RIO RIO 1012 1011 W W RIO 109 W (construction test only) VIOTM V t1, t2 = 1 to 10 s t3, t4 = 1 s Vpd VIOWM VIORM 0 t3 t1 94 9225 t2 ttest = 60 s t4 tstress = 62 s t tTr =10 s Figure 3. Test pulse diagram for sample test according to DIN VDE 0884 6 (10) TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 CNY21N Typical Characteristics (Tamb = 25°C, unless otherwise specified) 10000 ICEO– Collector Dark Current, with open Base ( nA ) P tot – Total Power Dissipation ( mW ) 200 160 120 Coupled Device 80 Phototransistor IR-Diode 40 1000 100 10 0 1 0 25 50 75 100 Tamb – Ambient Temperature ( °C ) 95 11003 Figure 4. Total Power Dissipation vs. Ambient Temperature 0 1.0 0.1 10 1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) 0.1 1 100 10 IF – Forward Current ( mA ) 95 11006 Figure 5. Forward Current vs. Forward Voltage Figure 8. Collector Current vs. Forward Current 100 1.5 VCE=5V IF=10mA 1.2 1.1 1.0 0.9 0.8 0.7 IF=50mA IC – Collector Current ( mA ) CTR rel – Relative Current Transfer Ratio VCE=5V 0.01 0 20mA 10mA 10 5mA 2mA 1 1mA 0.6 0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80 96 11909 100 75 Figure 7. Collector Dark Current vs. Ambient Temperature IC – Collector Current ( mA ) I F – Forward Current ( mA ) 10.0 1.3 50 100 100.0 1.4 25 Tamb – Ambient Temperature ( °C ) 95 11005 1000.0 96 11862 VCE=20V IF=0 Tamb – Ambient Temperature ( °C ) Figure 6. Rel. Current Transfer Ratio vs. Ambient Temperature TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 0.1 0.1 95 11007 1 10 100 VCE – Collector Emitter Voltage ( V ) Figure 9. Collector Current vs. Collector Emitter Voltage 7 (10) CNY21N VCEsat – Collector Emitter Saturation Voltage ( V ) Typical Characteristics (Tamb = 25°C, unless otherwise specified) 0.9 t on / t off – Turn on / Turn off Time ( m s ) 1.0 CTR=50% 0.8 0.7 0.6 0.5 0.4 0.3 20% 0.2 0.1 10% 0 1 8 Saturated Operation VS=5V RL=1kW 4 0 5 100 10 VCE=5V 10 20 15 IF – Forward Current ( mA ) Figure 12. Turn on / off Time vs. Forward Current t on / t off – Turn on / Turn off Time ( m s ) CTR – Current Transfer Ratio ( % ) toff 95 10994 1000 1 20 Non Saturated Operation VS=5V RL=100W 15 10 ton 5 toff 0 0.1 1 10 100 IF – Forward Current ( mA ) Figure 11. Current Transfer Ratio vs. Forward Current 8 (10) ton 12 100 Figure 10. Collector Emitter Sat. Voltage vs. Collector Current 95 11009 16 0 10 IC – Collector Current ( mA ) 96 11910 20 0 95 10993 2 4 6 8 10 IC – Collector Current ( mA ) Figure 13. Turn on / off Time vs. Collector Current TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 CNY21N Dimensions in mm 20.0 19.6 19.8 19.6 1.8 5.1 4.5 1.54 3.7 3.5 3.3 0.35 0.25 0.58 0.48 15.24 A 8.22 7.42 C 6.4 6.2 C TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 E 95 10948 technical drawings according to DIN specifications 9 (10) CNY21N Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 10 (10) TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96