DG201HS High-Speed Quad SPST CMOS Analog Switch Features Benefits Applications Fast Switching—tON: 38 ns Low On-Resistance: 25 Low Leakage: 100 pA Low Charge Injection TTL/CMOS Logic Compatible Single Supply Compatibility High Current Rating: –30 mA Faster Throughput Higher Accuracy Reduced Pedestal Error Upgrades Existing Designs Simple Interfacing Replaces HI201HS, ADG201HS Space Savings (TSSOP) Data Acquisition Hi-Rel Systems Sample-and-Hold Circuits Communication Systems Automatic Test Equipment Integrator Reset Circuits Choppers Gain Switching Avionics Description The DG201HS is an improved monolithic device containing four independent analog switches. It is designed to provide high speed, low error switching of analog signals. Combining low on-resistance (25 ) with high speed (tON: 38 ns), the DG201HS is ideally suited for high speed data acquisition requirements. high-voltage silicon-gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages to the supply values, when off. To achieve high voltage ratings and superior switching performance, the DG201HS is built on a proprietary Functional Block Diagram and Pin Configuration LCC Dual-In-Line, SOIC and TSSOP D1 IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V– GND Key S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Top View 1 20 19 4 18 S2 V– 5 17 V+ NC 6 16 NC 0 ON 7 15 NC 1 OFF 8 14 S3 12 NC 5 2 D2 S1 13 V+ 4 3 IN1 NC IN2 GND S4 9 D4 10 11 12 IN4 NC IN3 Top View Truth Table Logic Switch Logic g “0” 0.8 V L i “1” 2.4 Logic 24V 13 D3 Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70038. Siliconix E-77071—Rev. E, 01-Sep-97 1 DG201HS Ordering Information Temp Range –40 to 85_C –55 to 125_C Package Part Number 16-Pin Plastic DIP DG201HSDJ 16-Pin Narrow SOIC DG201HSDY 16-Pin TSSOP DG201HSDQ 16-Pin CerDIP DG201HSAK/883 LCC-20 DG201HSAZ/883 Absolute Maximum Ratings V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . (V–) –4 V to (V+) +4 V 16-Pin CerDIPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW 16-Pin Narrow Body SOIC and TSSOPe . . . . . . . . . . . . . . . . 600 mW LCC-20d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30 mA Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . 100 mA Storage Temperature (A Suffix) . . . . . . . . . . . . . –65 to 150_C (D Suffix) . . . . . . . . . . . . . –65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6 mW/_C above 75_C. d. Derate 12 mW/_C above 75_C. e. Derate 7.6 mW/_C above 75_C. Schematic Diagram (Typical Channel) V+ SX 5V Reg Level Shift/ Drive V– V+ DX INX GND V– Figure 1. 2 Siliconix E-77071—Rev. E, 01-Sep-97 DG201HS Conditions Unless Otherwise Specified Parameter Symbol V = 15 V, V V– V = –15 15 V V+ VIN = 3 V, 0.8 Vf A Suffix –55 to 125_C Tempb Typc Mind D Suffix –40 to 85_C Maxd Mind Maxd Unit V+ V 50 75 W Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) Full IS = –10 mA, VD = "8.5 V V+ = 13.5 V, V– = –13.5 V rDS(on) Match IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) V+ = 16.5 V, V– = –16.5 V VD = "15.5 V VS = #15.5 V V+ = 16.5 V, V– = –16.5 V VS = VD = #15.5 V V– V+ V– Room Full 25 50 75 Room 3 Room Full 0.1 –1 –60 1 60 –1 –20 1 20 Room Full 0.1 –1 –60 1 60 –1 –20 1 20 Room Full 0.1 –1 –60 1 60 –1 –20 1 20 % nA Digital Control Input, High Voltage VINH Full Input, Low Voltage VINL Full Cin Full Input Capacitance Input Current IINL or IINH VIN under test = 0.8 V, 3 V 2.4 2.4 0.8 0.8 5 Full V pF –1 1 –1 1 mA Dynamic Characteristics Turn-On Time Turn-Off Time tON tOFF1 RL = 1 kW , CL = 35 pF VS = "10 V, VINH = 3 V See Figure 3 tOFF2 Output Settling Time to 0.1% ts Room Full 48 60 75 60 75 Room Full 30 50 70 50 70 Room 150 Room 180 Q CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W Room –5 OFF Isloation OIRR RL = 1 kW , CL = 10 pF f = 100 kHz Room 85 Crosstalk (Channel-to-Channel) XTALK Any Other Channel Switches RL = 1 kW , CL = 10 pF f = 100 kHz Room 100 Source Off Capacitance CS(off) Room 8 Drain Off Capacitance CD(off) Room 8 Room 30 Charge Injection V S , VD = 0 V V, f = 1 MHz ns pC dB Channel On Capacitance CD(on) Drain-to-Source Capacitance CDS(off) Room 0.5 I+ Room Full 4.5 Room Full 3.5 pF Power Supplies Positive Supply Current Negative Supply Current Power Consumptionc Siliconix E-77071—Rev. E, 01-Sep-97 I– PC V V– V = –15 15 V V+ = 15 V, VIN = 0 or 5 V Full 10 10 mA –6 –6 240 240 mW 3 DG201HS Specificationsa for Single Supply Conditions Unless Otherwise Specified Parameter Symbol V+ = 10.8 V to 16.5 V V– = GND = 0 V VIN = 3 V, 0.8 Vf A Suffix –55 to 125_C Tempb Typc D Suffix –40 to 85_C Mind Maxd Mind Maxd Unit Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) + IS(on) Full IS = –10 mA, VD = 8.5 V V+ = 10.8 V V+ = 16.5 V,, VS = 0.5 V,, 10 V VD = 10 V, V 00.5 5V V+ = 16.5 V, VD = 0.5 V, 10 V 0 V+ 0 90 120 V+ V 90 120 W Room Full 65 Room Full 0.1 –1 –60 1 60 –1 –20 1 20 Room Full 0.1 –1 –60 1 60 –1 –20 1 20 Room Full 0.1 –1 –60 1 60 –1 –20 1 20 nA Digital Control Input, High Voltage VINH Full Input, Low Voltage VINL Full Input Capacitance Input Current Cin IINL or IINH Full V+ = 16.5 V VIN under test = 0.8 V, 3 V 2.4 2.4 0.8 0.8 5 Full V pF –1 1 –1 1 mA Dynamic Characteristics Turn-On Time Turn-Off Time tON tOFF1 F VS = 2 V RL = 1 kW , CL = 35 pF, V= 10.8 V, See Figure 2 tOFF2 Output Settling Time to 0.1% 50 70 50 70 Room Full 50 70 50 70 Room 150 Room 180 Q CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W Room 10 Off Isloation OIRR RL = 1 kW , CL = 10 pF f = 100 kHz Room 85 Crosstalk (Channel-to-Channel) XTALK Any Other Channel Switches RL = 1 kW , CL = 10 pF f = 100 kHz Room 100 Room 10 Room 10 Room 30 Charge Injection ts Room Full Source Off Capacitance CS(off) Drain Off Capacitance CD(off) Channel On Capacitance CD(on) f = 1 MHz VANALOG = 0 V ns pC dB pF Power Supplies Positive Supply Current Power Consumptionc I+ PC V+ = 15 V, V VIN = 0 or 5 V Full 10 10 mA Full 150 150 mW Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. 4 Siliconix E-77071—Rev. E, 01-Sep-97 DG201HS Typical Characteristics rDS(on) vs. VD and Power Supply Voltages 60 50 5 V 40 10 V 30 15 V 20 20 V 10 0 –20 –16 –12 –8 –4 0 4 8 12 16 rDS(on) vs. VD and Temperature 50 rDS(on) – Drain-Source On-Resistance ( W ) rDS(on) – Drain-Source On-Resistance ( W ) 70 20 V+ = 15 V V– = –15 V 40 125_C 85_C 30 25_C 20 0_C –55_C 10 0 –15 –10 –5 VD – Drain Voltage (V) rDS(on) vs. VD and Single Power Supply Voltages 10 nA 10 15 Leakage Currents vs. Temperature V+ = 5 V 160 140 1 nA 120 Leakage rDS(on) – Drain-Source On-Resistance ( W ) 5 VD – Drain Voltage (V) 180 7V 100 80 10 V 60 ID(on) 100 pA 12 V IS(off), ID(off) 15 V 40 20 0 0 2 4 6 8 10 12 14 10 pA –60 –40 –20 16 0 VD – Drain Voltage (V) 2 50 Switching Time (ns) 55 1 0 4 60 80 100 120 140 45 tON 40 35 0.5 40 Switching Time vs. Power Supply Voltage 2.5 1.5 20 Temperature (_C) Input Switching Threshold vs. Supply Voltage VIN ( V ) 0 tOFF 30 6 8 10 12 14 16 18 20 Positive/Negative Supplies (V) Siliconix E-77071—Rev. E, 01-Sep-97 4 6 8 10 12 14 16 18 20 Supply Voltage (V) 5 DG201HS Typical Characteristics (Cont’d) Switching Times vs. Temperature V+ = 15 V V– = –15 V Switching Times vs. Single Supply Voltage 65 45 60 tON 55 t ON , t OFF (ns) Switching Time (ns) 40 35 tOFF 30 50 45 tON 40 25 35 tOFF 20 –55 30 –25 0 25 50 75 100 4 125 6 Temperature (_C) Switching Times vs. Temperature 14 16 18 20 Charge Injection vs. Source Voltage V+ = 15 V, V– = 0 V V+ = 10.8 V V– = 0 V 10 Chargie Injection (pC) Switching Time (ns) 12 20 40 tON 35 tOFF 30 0 –10 V+ = 15 V V– = –15 V –20 –30 25 20 –55 10 V+ – Positive Supply (V) 50 45 8 –25 0 25 50 75 100 –40 –15 125 –10 Temperature (_C) –5 0 5 10 15 VS – Source Voltage (V) Off Isolation vs. Frequency 120 V+ = 15 V V– = –15 V 110 100 RL = 100 OIRR 90 80 70 RL = 1 k 60 50 40 10 k 100 k 1M 10 M f – Frequency (Hz) 6 Siliconix E-77071—Rev. E, 01-Sep-97 DG201HS Test Circuits +15 V V+ D S 10 V VO IN RL 1 kW 3V GND V– CL 35 pF 3V Logic Input tr <20 ns tf <20 ns 50% 0V tOFF1 Switch Input VS Switch Output VO 90% 10% tON –15 V tOFF2 CL (includes fixture and stray capacitance) RL VO = VS RL + rDS(on) Figure 2. Switching Time +15 V V+ Rg S D VO IN CL 1 nF 3V GND DVO VO INX V– SWON OFF Q = DVO x CL –15 V Figure 3. Charge Injection +15 V C +15 V V+ C V+ S VS S1 VS VO D Rg = 50 W D1 50 W IN1 0V, 2.4 V Rg = 50 W 0V, 2.4 V RL IN GND V– C NC 0V, 2.4 V D2 S2 VO RL IN2 GND V– C –15 V –15 V Off Isolation = 20 log Figure 4. Off Isolation Siliconix E-77071—Rev. E, 01-Sep-97 VS VO XTALK Isolation = 20 log C = RF bypass VS VO Figure 5. Crosstalk 7 DG201HS Applications A high-speed, low-glitch analog switch such as Siliconix’s DG201HS improves the accuracy and shortens the acquisition and settling times of a sample-and-hold circuit. Input Buffer DG201HS JFET Buffer OUTPUT to A/D Converter VANALOG CH (Polystyrene) Si581 SAMPLE/HOLD 8 Siliconix E-77071—Rev. E, 01-Sep-97