U2797B TELEFUNKEN Semiconductors 1000-MHz Quadrature Modulator Description The IC U2797B is a 1000-MHz quadrature modulator that uses TELEFUNKEN’s advanced UHF process. It features a frequency range from 100 MHz up to 1000 MHz, low current consumption, and single-ended RF and LO ports. Features D Supply voltage: 5 V (typical) D Low power consumption: 30 mA / 5 V (typical at The I/Q input impedance is about 150 kW. Adjustment free application makes the direct converter suitable for all digital radio systems up to 1000 MHz, e.g., GSM, DAMPS, PDC. D 50-W single-ended LO and RF port D LO- frequency range of 100 MHz to 1 GHz D SSO 20 package –1 dBm output level) D 150 kW I/Q input impedance D Excellent sideband suppression by means of duty cycle regeneration of the LO input signal Benefits D Extended talk time due to increased battery life D Few external components result in cost and board D Phase control loop for precise 90° phase shifting D Power down mode D Low LO input level: –10 dBm (typical) space saving D Adjustment-free hence saves time Block Diagram SPD 8 10 9 14 Duty cycle regenerator 19 Phase adj. 20 LO i BBBi 11 BBBi 12 Frequency doubler 0° 90 ° 90° control loop 1 5,6 VS Power 7 down V 13 Ref M BBAi BBAi PD 4 RFo 2, 3, 15, 16, 17, 18 GND 94 8185 e Ordeing Information Extended Type Number U2797B-AFS U2797B-AFSG3 Rev. A1: 06.09.1995 Package SSO20 SSO20 Remarks Rail, MOQ 830 pcs. Tape & reel, MOQ 4000 pcs. 1 (13) U2797B TELEFUNKEN Semiconductors Pin Description SSO 20 U2790B–FS (SSO 20) PD 1 20 Phadj GND 2 19 Phadj GND 3 18 GND RFO 4 17 GND VS 5 16 GND VS 6 15 GND VS 7 14 LOi SPD 8 13 VREF BBAi 9 12 BBBi BBAi 10 11 BBBi Pin Symbol Function 1 PD Power down port 2 GND Ground 3 GND Ground 4 RFo RF output 5 VS Supply voltage 6 VS Supply voltage 7 VS Supply voltage 8 SPD Settling time power down 9 BBAi Baseband input A 10 BBAi Baseband input A inverse 11 BBBi Baseband input B 12 BBBi Baseband input B inverse 13 VREF Reference voltage (2.5 V) 14 LOi LO input 15 GND Ground 16 GND Ground 17 GND Ground 18 GND Ground 19/20 Phadj Phase adjustment (not necessary for regular applications) 94 8186 e Absolute Maximum Ratings Parameters Supply voltage Pins 5, 6 and 7 Input voltage Pins 9, 10, 11, 12, 14 and 15 Junction temperature Storage temperature range Symbol VS Vi Tj Tstg Value 6 0 to VS 125 – 40 to + 125 Unit V V °C °C Symbol VS Tamb Value 4.5 to 5.5 – 40 to + 85 Unit V °C Symbol Rthja Value 140 Unit K/W Operating Range Parameters Supply voltage range Pins 5, 6 and 7 Ambient temperature range Thermal Resistance Junction ambient 2 (13) Parameters SSO 20 Rev. A1: 06.09.1995 U2797B TELEFUNKEN Semiconductors Electrical characteristics Test conditions (unless otherwise specified): VS = 5 V, Tamb = 25°C, referred to test circuit. System impedance ZO = 50 W, fLO = 900 MHz, PLO = –10 dBm, VBBi = 1 Vpp diff Parameters Supply voltage range Supply current Baseband inputs Input voltage range (differential) Input impedance (single ended) Input frequency range LO input Frequency range Input level 1 Input impedance Voltage standing wave ratio Duty cycle range RF output Output level LO suppression 2 Sideband suppression 2,3 Phase error 4 Amplitude error Noise floor VSWR 3rd order baseband harmonic suppression RF harmonic suppression Power down mode Supply current Settling time Switching voltage Power on Power down Reference voltage Voltage range Output impedance Test conditions / Pin Pins 5, 6 and 7 Pins 5, 6 and 7 Pins 9-10, 11–12 Symbol VS IS Min. 4.5 Typ. Max. 5.5 Unit V mA 1500 mVpp 30 VBBi 1000 ZBBi 150 kW fBBi 0 200 MHz fLOi PLOi ZiLO VSWRLO DCRLO 100 – 12 1000 –5 MHz dBm 2 0.6 – – PRFo LORFo –5 30 32 35 30 Pin 14 – 10 50 1.4 0.4 W Pin 4 fLO = 900 MHz fLO = 150 MHz fLO = 900 MHz fLO = 150 MHz SBSRFo VBBi = 2 V, VBBi = 3 V VBBi = VBBi = 2.5 V Pe Ae NFL VSWRRF SBBH x Pins 4, 5 dBm dB dB deg. dB dBm/Hz " 35 SRFH VPD 0.5 V VPD = 1 V CSPD = 100 pF CLO = 100 pF CRFo = 1 nF Pin 1 –1 35 35 40 35 <1 < 0.25 – 132 – 144 1.6 45 2 dB 35 IPD dB 1 10 10 tsPD A s Pin 6 to 3 VPDon VPDdown 4 VRef Zo Ref 2.35 1 V V Pin 13 2.5 30 2.65 V v Note: 1 The required LO level is a function of the LO frequency Note: 2 In reference to a RF output level – 1 dBm and I/Q input level of 400 mVpp diff. Note: 3 Sideband suppression is tested without connection at pins 19 and 20. For higher requirements a potentiometer can be connected at these pins. Note: 4 For Tamb = –40 to + 85°C and VS = 4.5 to 5.5 V Rev. A1: 06.09.1995 3 (13) U2797B TELEFUNKEN Semiconductors Typical single sideband output spectrum fLO = 900 MHz, PLO = – 10 dBm, VBBi = 1 VPP (differential), Tamb = 25°C 94 7856 e Typical GMSK output spectrum 94 7855 e 4 (13) Rev. A1: 06.09.1995 U2797B TELEFUNKEN Semiconductors Typical RF-harmonic output spectrum 94 7854 e 12 16 8 10 VBBi = 0.2 VPP VBBi = 0.4 VPP IP3 ( dBm ) IP3 ( dBm ) 12 VBBi = 0.4 VPP 8 6 VBBi = 1.0 VPP 4 4 2 0 –40 –20 94 8884 0 20 40 60 80 Temperature ( °C ) OIP3 vs. Tamb, LO = 150 MHz, level – 20 dBm Rev. A1: 06.09.1995 0 –40 –20 100 94 8885 0 20 40 60 80 100 Temperature ( °C ) OIP3 vs. Tamb, LO = 900 MHz, level – 10 dBm 5 (13) U2797B TELEFUNKEN Semiconductors 0.5 40 Supply current ( mA ) Output power ( dBm ) 0 FLO = 150 MHz –0,5 –1 –1.5 FLO = 900 MHz –2 –2.5 –40 –20 94 8887 0 20 40 60 Temperature ( °C ) 80 30 20 10 0 –40 –20 100 94 8886 Output power vs. Tamb 0 20 40 60 80 100 Temperature ( °C ) Supply current vs. Tamb Typical S11 frequency response of the RF output 94 7850 e 6 (13) Rev. A1: 06.09.1995 TELEFUNKEN Semiconductors U2797B Typical VSWR frequency response of the RF output 94 7849 e Typical S11 frequency response of the LO input 94 7852 e Rev. A1: 06.09.1995 7 (13) U2797B TELEFUNKEN Semiconductors 11 VBBi ( differential ) ( VPP ) 2 VSWR 9 7 5 3 1 100 1 0 1000 LO frequency (MHz) 94 7851 0 200 Typical VSWR frequency Response of the LO Input 400 600 800 1000 1200 1400 LO frequency ( MHz ) 94 7858 Typical Required VBBi Input Signal (differential) vs. LO Frequency for PO = 0 dBm and PO = – 2 dBm 60 50 –10 LO power ( dBm ) Supply current ( mA ) 0 40 30 –20 –30 20 –40 10 –40 –20 0 20 40 60 80 100 –50 0 Temperature ( °C ) 94 7845 94 7857 200 400 600 800 1000 1200 1400 LO frequency ( MHz ) Typical supply current vs. temperature at VS = 5 V Typical useful LO power range vs. LO frequency at Tamb = 25°C Output power ( dBm ) 0 –5 0 94 7859 200 400 600 800 1000 1200 1400 LO frequency ( MHz ) Typical output power vs. LO-frequency at Tamb = 25°C, VBBi = 230 mVPP (differential) 8 (13) Rev. A1: 06.09.1995 U2797B TELEFUNKEN Semiconductors Application circuit x v Bias network for ac coupled baseband inputs (VBA, VBB). R1 = 2.5 kW, R2 10 kW for 35 dB LO suppression which is in reference to < 2 mV input offset. R1 VRef R2 13 10 BBAi PD 1 Power down 9 5,6 VS 7 S PD 8 LO i 14 Duty cycle regenerator Frequency doubler 0° 90° 90° control loop M BBAi 4 RFo 19 Phase adj. 20 BB Bi 11 BBBi 12 94 8184 e 2, 3, 15, 16, 17, 18 GND PCB layout U2797B-FS (SSO 20) 94 8230 e Rev. A1: 06.09.1995 9 (13) U2797B TELEFUNKEN Semiconductors Evaluation circuit (PCB equip) 94 8229 e Part list C1, C3, C6 C8 C5 P L1, L2 1 nF 100 pF 100 nF Poti 10 kW PCB Inductor 50 W Microstrip optional The above listed components result in a PD settling time of < 20 ms. Use of other component values will require consideration of time requirements in burst-mode applications. 10 (13) Rev. A1: 06.09.1995 U2797B TELEFUNKEN Semiconductors Application notes 1. Noise floor and settling time In order to reduce noise on the power down control input and improve the wide-off noise floor of the 900-MHz RF output signal, capacitor CPD should be connected from pin 8 to ground in the shortest possible way. The settling time has to be considered for the system under design. For GSM applications a value of CPD = 1 mF defines a settling time, tsPD, equal or less than 3 ms. This capacitance does not have any influence on the noise floor within the relevant GSM mask. For mobile application the mask requirements can be achieved very easily without CPD. A significant improvement of the wide-off noise floor is obtainable with CPD greater than 100 nF. Such values are recommended for applications where the settling time is not critical, such as in base stations. Coupling capacitors for LOi and RFO also have a certain impact on the settling time. The values used for the measurements are CLOi = 100 pF and CRFo = 1 nF. Mixer input stage A, B A, B 94 8187 e Figure 1 baseband input circuitry U2797B-FS ( SSO 20 ) has a 150 kW baseband input impedance. The reference voltage, VREF, is provided at pin 13. Rev. A1: 06.09.1995 11 (13) U2797B TELEFUNKEN Semiconductors Dimensions in mm Package: SSO 20 95 9943 12 (13) Rev. A1: 06.09.1995 TELEFUNKEN Semiconductors U2797B Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Rev. A1: 06.09.1995 13 (13)