U4065B FM Receiver Description The IC U4065B is a bipolar integrated FM-frontend circuit. It contains a mixer, an oscillator, two IF preamplifiers and an unique interference sensor. The device is designed for high performance car radio and home receiver applications. Features D All frontend functions of a high performance FM- D Easy cascading of three IF filters (ceramic) by use of receiver, except the RF preamplifier, are integrated two on-chip IF preamplifiers D Improved dynamic range by high current double balanced mixer design and a new AGC conception with 3 loops on chip D Improved blocking and intermod behavior by use of an unique “interference” sensor controlling the AGC D On-chip control functions are available for system gain adjust (dB linear vs. dc current) D Low noise LO design D ESD protected Block Diagram VS ANT VS IF gain adjust IF tank IF BPF IF BPF IF outp IF BPF 19 RF tank 16 14 15 PIN ATT 18 20 21 4 7 3 5 2 Mixer IF 1 IF 2 AGC Interference mixer RF RF tank D.N.C. 13 wide band & IF AGC adjust (wide band) 12 Vref = 4 V LO tank IF& 23 24 detector 22 1 LO output 11 9 17 Voltage reg. Local oscill. 8 10 6 + Interference IF BPF VS Vtune VS AGC level Rev. A3, 15-Oct-98 94 8768 1 (23) U4065B Pin Description Pin Symbol 1 LOBUFF Buffered local oscillator output 2 GND1 Ground of the second IF amplifier Output of the second IF amplifier Gain control of the first IF amplifier Input of the second IF amplifier 3 IF2OUT 4 GAINIF1 5 IF2IN 6 VS 7 IF1OUT 8 GND2 9 IMIFIN 10 11 12 Function Pin Symbol 13 AGCWB 14 GND3 15 MIXIN1 16 MIXIN2 17 VREF Supply voltage 18 MIXOUT1 Mixer output 1 Output of the first IF amplifier 19 MIXOUT2 Mixer output 2 Ground 20 GND4 21 IF1IN Ground of the first IF amplifier Input of the first amplifier 22 GND5 Oscillator ground Input of the amplifier for the IM-sensor AGCOUT Output of the automatic gain control IMMIXOUT Output of the intermodulation mixer D.N.C. Do not connect LOBUFF Function Threshold adjustment of the wideband AGC Mixer ground Input 1 of the double balanced mixer Input 2 of the double balanced mixer Reference voltage output 23 LOE Local oscillator (emitter) 24 LOB Local oscillator (base) GND1 + 94 8769 94 8770 23 50 1 ESD 1V Buffered local oscillator output: It drives the FM-input of the PLL circuit (for example U428xBM-family). The typical parallel output resistance at 100 MHz is 70 W, the parallel output capacitance is about 10 pF. When using an external load of 500 W / 10 pF, the oscillator swing is about 100 mV. The second harmonic of the oscillator frequency is less than – 15 dBc. 2 (23) 2 8 ESD Ground of the second IF amplifier: There is no internal connection to the other ground pins. Rev. A3, 15-Oct-98 U4065B The parallel input resistance is 330 W. The parallel input capacitance is about 12 pF. No dc current is allowed. To avoid overload of this stage an internal detector watches the input level and causes current at the AGCOUT pin. IF2OUT 3 ESD VS IF1OUT VS Vref 330 94 8771 ESD Output of the second IF amplifier: 7 The parallel output capacitance to ground is about 7 pF. The external load resistance is to connect to VS. The dc current into the pin is typically 3 mA. Note: Supply voltage VS has to be protected against IF-distortion 94 8774 GAINIF1 17 Vref Output of the first IF amplifier: The parallel output resistance is 330 W which allows the use of a standard ceramic BPF. The parallel output capacitance is about 7 pF. The dc voltage at the pin is 0.5 V less than VS. 2 kW ESD 4 94 8772 IMIFIN Gain control of the first IF amplifier: The gain of the first IF amplifier can be adjusted by a resistor to ground. This is useful for example to compensate the insertion loss tolerances of the ceramic BPF’s. Please ensure that the output current of the pin does not exceed 150 mA in any case. Linear increasing in the current out of GAINIF1 effects dB linear increasing of the gain (0.15 dB/mA). I4 = 0 G= Gmin = 2 dB I4 = 140 mA G = Gmax = 22 dB å å 94 8775 9 ESD IF2IN Vref 94 8773 Input of the IF amplifier for the IM-sensor: 5 ESD Input of the second IF amplifier: Rev. A3, 15-Oct-98 The parallel input resistance is 330 W. The amplifier is extremely sensitive to ac signals. A few hundred mV of IF-signal at this pin will cause current at the AGC output. Therefore pay attention when connecting the standard ceramic filter used between IMOUT and this pin. The reference point of the filter has to be free of any ac signal. Please avoid dc current at this pin. 3 (23) U4065B AGCOUT MIXIN1 Vref 94 8776 10 2.5 k 15 1k ESD ESD 1V 94 8779 Output of the automatic gain control: Input 1 of the double balanced mixer: The AGC output is an open collector output. The current of the pin diode is this current multiplied by the current gain of the external PNP transistor. The dc voltage at the pin may vary from 2 V to VS, therefore you can easily use this pin as an indicator of the AGC regulation state. MIXIN2 The parallel input resistance is 1.2 kW. The parallel input capacitance is about 9 pF. When using the mixer unbalanced this pin is to be grounded for RF-signals by an external capacitance of a few nF. DC current is not allowed. IMMIXOUT Vref VS 2.5 k ESD 16 300 11 ESD 94 8780 1V 94 8777 Output of the intermodulation mixer: The parallel output resistance is 330 W which allows the use of a standard ceramic BPF without any further matching network. Please ensure that the ground-pin of the filter is free of ac signals. Input 2 of the double balanced mixer: The parallel input resistance is 1.6 kW. The parallel input capacitance is about 7 pF. The double sideband noise figure of the unbalanced mixer is about 7 dB. In the balanced case the noise figure will be reduced by about 0.8 dB. VREF AGCWB 94 8781 VS 200 Vref 25 k 4.6 V 17 32 k 13 ESD ESD 94 8778 Threshold adjustment of the wideband AGC: The threshold of the wideband AGC can be adjusted by an external resistor to ground. The setting range is 10 dB. For minimum blocking this pin is connected to ground. In order to set the threshold to smaller levels the resistance value should be up to a few hundred kW. 4 (23) Reference voltage: The internal temperature compensated reference voltage is 3.9 V. It is used as bias voltage for most blocks, so the electrical characteristics of the U4065B are widely independent of the supply voltage. The internal output resistance of the reference voltage is less than 10 W. To avoid internal coupling across this pin external capacitors are required. The maximum output current is Iref = 5 mA. Rev. A3, 15-Oct-98 U4065B MIXOUT1, MIXOUT2 ESD 18 LOE 19 23 ESD 94 8785 94 8782 Mixer output 1, 2: Emitter of the local oscillator: The mixer output is an open collector of a bipolar transistor. The minimum voltage at this pins is 5 V (VS-voltage swing). The dc current into this pins is typically 9 mA. Good LO- and RF suppression at the mixer output can be achieved by symmetrical load conditions at the pins MIXOUT1 and MIXOUT2. An external capacitor is connected between LOE and ground. The ground pin of this capacitor is to connect to the pin GND5. GND5 is the chip internal ground of the local oscillator. LOB IF1IN 24 21 Vref ESD 330 94 8786 ESD Input of the first IF amplifier: 94 8784 The typical input resistance is 330 W. The dc voltage is nearly the same one as the reference voltage. Please avoid dc current at this pin. Rev. A3, 15-Oct-98 Base of the local oscillator: The tank of the local oscillator is connected at pin LOB. The ground pin of this tank is to connect to the pin GND5. GND5 is the chip internal ground into pin 24 of the local oscillator. The resonant resistance of the tank should be about 250 W. Minimum Q of the unloaded tank is 50. 5 (23) U4065B Functional Description The U4065B FM-frontend IC is the dedicated solution for high end car radios. A new design philosophy enables to build up tuners with superior behavior. This philosophy is based on the fact that the sensitivity of state of the art designs is at the physical border and cannot be enhanced any more. On the other hand, the spectral power density in the FM-band increases. An improvement of reception can only be achieved by increasing the dynamic range of the receiver. This description is to give the designer an introduction to get familiar with this new product and its philosophy. 1. The Signal Path The U4065B offers the complete signal path of an FMfrontend including a highly linear mixer and two IF preamplifiers. The mixer is a double balanced high current Gilbert Cell. A high transit frequency of the internal transistors enables the use of the emitter grounded circuit with its favorable noise behavior. The full balanced output offers LO carrier reduction. The following IF preamplifier has a dB-linear gain adjustment by dc means. Thus different ceramic filter losses can be compensated and the overall tuner gain can be adapted to the individual requirements. The low noise design suppresses post stage noise in the signal path. Input- and output resistance is 330 W to support standard ceramic filters. This was achieved without feedback, which would cause different input impedances when varying the output impedance. The second IF preamplifier enables the use of three ceramic filters with real 330 W input- and output termination. Feedthrough of signals is kept low. The high level of output compression is necessary to keep up a high dynamic range. Beneath the signal path the local oscillator part and the AGC signal generation can be found on chip. The local oscillator uses the collector grounded colpitts type. A low phase noise is achieved with this access. A mutual coupling in the oscillator coil is not necessary. 2. The AGC Concept Special care was taken to design a unique AGC concept. It offers 3 AGC loops for different kinds of reception conditions. The most important loop is the interference sensor part. In today’s high end car radios, the FM AGC is state of the art. It is necessary to reduce the influence of 3rd and higher order intermodulation to sustain reception in the presence of strong signals in the band. On one hand, it makes a sense to reduce the desired signal level by AGC as few as possible to keep up stereo reception, on the other 6 (23) hand two or more strong out of channel signals may interfere and generate an intermodulation signal on the desired frequency. By introducing input attenuation, the level of the intermod signal decreases by a higher order, whereas the level of the desired signal shows only a linear dependency on the input attenuation. Therefore input attenuation by pin diodes may keep up reception in the presence of strong signals. The standard solution to generate the pin diode current is to pick up the RF-signal in front of the mixer. Because the bandwidth at that point is about 1.5 MHz, this is called wideband AGC. The threshold of AGC start is a critical parameter. A low threshold does not allow any intermodulation but has the disadvantage of blocking if there is only one strong station on the band or if the intermod signals do not cover the desired channel. A higher AGC threshold may tolerate a certain ground floor of intermodulation. This avoids blocking, but it has the disadvantage, that no reception is possible, if the interfering signals do generate an intermod signal inside the desired channel. This contradiction could not be overcome in the past. With the new U4065B IC, a unique access to this problem appears. This product has an interference sensor on chip. Thus an input signal attenuation is only performed, if the interfering signals do generate an intermod signal inside the desired channel. If they do not, the still existing wideband AGC is yet active but at up to 20 dB higher levels. The optimum AGC state is always generated. The figures 1 to 4 illustrate the situation. In figure 1 the AGC threshold of a standard tuner is high to avoid blocking. But then the intermod signal suppresses the desired signal. The interference sensor of the U4065B takes care that in this case the AGC threshold is kept low as illustrated in figure 2. In figure 3 the situation is vice versa. The AGC threshold of a standard tuner is kept low to avoid intermod problems. But then blocking makes the desired signal level drop below the necessary stereo level. In this case, the higher wideband AGC level of the U4065B enables perfect stereo reception. By principle, this interference sensor is an element with a third order characteristic. For input levels of zero, the output level is zero, too. With increasing input level, the output level is increased with the power of three, thus preferring intermod signals compared to linear signals. At the same time, a down conversion to the IF level of 10.7 MHz is performed. If a corresponding 10.7 MHz IF filter selects the intermod signals, an output is only generated, if an intermod signal inside the 10.7 MHz channel is present. Rev. A3, 15-Oct-98 U4065B The circuit blocks interference sensor and IF & detector build up a second IF chain. In an FM system, the max deviation of a 3rd order intermod signal is the triple max deviation of the desired signal. Therefore the ceramic IF BPF between Pin 11 and Pin 9 may be a large bandwidth type. This external part is the only additional amount for Level 94 8820 this unique feature. A further narrow band AGC avoids overriding the second IF amplifier. The amplitude information of the channel is not compressed in order to maintain multipath detection in the IF part of the receiver. Level 94 8821 Interfering signals Interfering signals Intermod signal Intermod signal Desired signal Desired signal ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ Desired frequency Stereo-level Noise floor Frequency Figure 1 A high AGC threshold causes the intermod signal to suppress the desired signal 94 8822 Level Noise floor Desired frequency Level Desired signal Stereo-level Noise floor Frequency Figure 3 A low AGC threshold causes the blocking signal to suppress the desired signal Rev. A3, 15-Oct-98 94 8823 Strong signal ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ Desired frequency Frequency Figure 2 The correct AGC threshold of the U4065B provides optimum reception Strong signal Desired signal Stereo-level ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ Intermod signal Intermod signal Stereo-level ÇÇÇÇÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇÇÇÇÇ Noise floor Desired frequency Frequency Figure 4 The correct AGC threshold of the U4065B provides optimum reception 7 (23) U4065B Absolute Maximum Ratings Reference point is ground (Pins 2, 8, 14, 20 and 22) Parameters Symbol Value Unit Supply voltage VS 10 V Power dissipation at Tamb = 85°C Ptot 470 mW Junction temperature Tj 125 °C Ambient temperature range Tamb – 30 to + 85 °C Storage temperature range Tstg – 50 to + 125 °C 2000 V Symbol Maximum Unit RthJA 90 K/W Electrostatic handling: Human body model (HBM), all I/O pins tested against the supply pins. "V ESD Thermal Resistance Parameters Thermal resistance Electrical Characteristics ^ VS = 8.0 V, fRF = 98 MHz, fOSC 108.7 MHz, fIF = fOSC – fRF = 10.7 MHz Reference point ground (Pins 2, 8, 14, 20 and 22),Tamb = 25_C, unless otherwise specified Parameters Test Conditions / Pins Symbol Min. Supply voltage Pins 3, 6, 10, 18 and 19 VS 7 Supply current Pins 3+6+10+18+19 Itot Oscillator (GND5 has to be connected to external oscillator components) Rg24 = 220 W, unloaded Q of LOSC = 70, RL1 = 520 W Pin 24 VLOB Pin 23 Oscillator voltage VLOE VLOBUFF 70 Pin 1 Harmonics Pin 1 Output resistance Pin 1 RLO Voltage gain Between pins 1 and 23 Mixer (GND3 has to be separated from GND1, GND2 and GND4) Conversion power gain Source impedance: GC 5 R = 200 W G15,16 3rd order input intercept IP3 4 Load impedance: Conversion transconductance g C RL18,19 L18 19 = 200 W Noise figure NFDSB Input resistance to ground Pin 15 Rignd15 f = 100 MHz Input capacitance to ground Cignd15 Input resistance to ground Pin 16 Rignd16 Input capacitance to ground f = 100 MHz Cignd16 Input-input resistance Between Pin 15 and Pin 16 Rii15,16 Input-input capacitance Between Pin 15 and Pin 16 Cii15,16 Output capacitance to GND Pin 18 and Pin 19 Cignd18,19 First IF preamplifier (IF 1) Gain control deviation by I4 Pin 4 17 Gain control slope dGIF1/dI4 8 (23) Typ. 8 37 160 100 90 Max. 10 47 Unit V mA mV 220 –15 70 0.9 dBc W 7 6 8 7 1.2 9 1.6 7 1.6 5 9 10 14 dB dBm mA/V dB kW pF kW pF kW pF pF 20 0.15 24 dB dB/mA Rev. A3, 15-Oct-98 U4065B Electrical Characteristics (continued) ^ VS = 8.0 V, fRF = 98 MHz, fOSC 108.7 MHz, fIF = fOSC – fRF = 10.7 MHz Reference point ground (Pins 2, 8, 14, 20 and 22),Tamb = 25_C, unless otherwise specified Parameters Test Conditions / Pins Symbol Min. External control current to ground at Gmin I4min at Gnom I4nom at Gmax I4max Power gain at I4min Between pins 21 and 7 Gmin –2.5 11 at I4nom Gnom p Source impedance: 19 at I4max Gmax RG21 = 200 W, Noise figure at Gmax NFmin Load impedance: at Gnom NFnom RL7 = 200 W at Gmin NFmax Temperature coefficient of TKnom the gain at Gnom 1 dB compression at Gnom Pin 7 Vcnom –3 dB cutoff freq. at Gnom Pin 7 fcnom Input resistance Pin 21 RiIF1 270 f = 10 MHz Input capacitance CiIF1 Output resistance Pin 7 RoIF1 270 f = 10 MHz Output capacitance CoIF1 Second IF preamplifier (IF 2) Power gain Between pins 5 and 3 GIF2 15 Source impedance: RG5 = 200 W Load impedance: RL3 =200 W Noise figure NFIF2 1 dB compression Pin 3 Vcomp –3 dB cutoff frequency Pin 3 fc Parallel input resistance Pin 5 RiIF2 270 f = 10 MHz Parallel input capacitance CiIF2 Parallel output resistance Pin 3 RoIF2 Parallel output capacitance f = 10 MHz CoIF2 Voltage regulator Regulated voltage Pin 17 Vref 3.7 Maximum output current Pin 17 Iref 5 Internal differential Pin 17 rd17 resistance, dc17/di17 when I17 = 0 Power supply suppression f = 50 Hz, Pin 17 psrr 36 AGC input voltage thresholds (AGC threshold current is 10 mA at Pin 10) IF2 input Pin 5 VthIF2 85 IF & detector Pin 9 VthIFD 42 Between Pins 15 and 16 Mixer input level of fiRF = 100 MHz wideband sensor V at pin 13 = 0 V VthWB1 95 I through pin 13 = 0 A 85 VthWB2 Rev. A3, 15-Oct-98 Typ. 0 70 140 2 12 22 7 9 15 +0.045 70 50 330 5 330 7 18 Max. Unit mA 2.5 16 28 dB dB dB/K mV MHz 400 W pF 400 W pF 19 7 500 50 330 12 50 7 400 3.9 4.9 7 50 dB dB mV MHz W pF kW pF 50 V mA W dB 86 43 92 48 dBmV dBmV 98 87 100 90 dBmV dBmV 9 (23) U4065B Test Circuit 4.7n vo IF Gain IF 1 0 to 140mA 4.7n vi IF 1 6 6 5 2 2 5 50 50 I4 1 RL7 RG5 vi IF 50 50 1 5 6 2 7 20 4 5 2 21 4.7n 1 2 6 I3 RG21 IF 1 RL3 IF 2 18 2 5 4.7n 2 RG15,16 1 6 Mixer 15 Cosc I6 4.7n Interference Rg24 47p 23 Vref = 4 V Local Interference oscillator amplifier 9 RG9 Losc 33p 4.7n 2 6 5 1 50 11 1 RLOBUFF 470p vLOBUFF fLOBUFF RL1 8 12 vi IF RG11 2 1 6 5 4.7n 10 (23) 1m 17 24 22 94 8829 Vs regulator 16 mixer fosc R13 6 Voltage vi RF 8p I13 AGC adjust (wide band) 14 5 50 13 19 6 1 V AGC block RL18,19 Vs I10 10 50 vo IF 3 I18,19 Vs vo IF 5 vo IF 50 Z/Ohm 1 50 200 RF Transformers MCL Type TMO 4 – 1 IL = 0.7 dB 5 2 4 0 0 6 Rev. A3, 15-Oct-98 U4065B Local Oscillator Rg24 vOSC24 24 23 47p Local oscillator 33p fOSC Oscillator output buffer 1 vOSC1 , fOSC 520 Tamb Free running oscillator frequency fOSC [ 110 MHz, v 94 9410 OSC24 = 160 mV, Rg24 =220 W, QL = 70 180 160 vOSC1 ( mV ) 140 120 100 80 60 40 20 0 –30 –10 10 30 50 70 90 Tamb ( °C ) 94 9411 Oscillator swing versus temperature Rev. A3, 15-Oct-98 11 (23) U4065B Mixer fOSC = 110.7 MHz, vOSC24 50 ^ 160 mV, f IF 1 2 Mixer 5 6 19 15 Rg24 voIF IL2 18 14 IL1 2viRF1 fRF1 2viRF2 fRF2 = 10.7 MHz 2 1 6 5 50 24 23 47p VS Local oscillator 22p Tamb 94 9412 fOSC Conversion power gain GC = 20 log (voIF/viRF) + IL1 (dB) + IL2 (dB) IL1, IL2 insertion loss of the RF transformers 120 Conversion characteristic vo IF ( dB mV ) 100 3rd order IM-characteristic 80 60 40 20 0 0 94 9413 20 40 60 80 100 120 viRF1, viRF2 ( dBmV ) Characteristic of the mixer 12 (23) Rev. A3, 15-Oct-98 U4065B 8 11.0 7 10.7 10.4 I18 , I19 ( mA ) 6 GC ( dB ) 5 4 3 10.1 9.5 9.2 8.9 2 8.6 1 0 –30 9.8 8.3 –10 10 30 50 70 8.0 –30 90 Tamb ( °C ) 94 9414 –10 10 30 Conversion power gain of the mixer stage versus temperature 50 70 90 Tamb ( °C ) 94 9415 Current of the mixer stage versus temperature 1st IF Preamplifier viIF21 1:2 IL1 1 50 fIF 2viIF 5 21 RL7 = 200 Rg21 = 200 2 6 2:1 7 voIF7 IF IL2 2 1 6 5 Tamb 4 voIF 50 V(PIN4) I4 Power gain GIF = 20 log (voIF/viIF) + IL1 (dB) + IL2 (dB) IL1, IL2 = insertion loss of the RF transformers Rev. A3, 15-Oct-98 94 9416 13 (23) U4065B 25 25 20 15 T = -30°C 10 Gnom GIF1( dB ) 15 GIF1 ( dB ) Gmax 20 T = 90°C 10 5 5 Gmin 0 0 –5 T = 30°C –5 –10 0 20 40 60 80 100 120 140 I4 (mA ) 94 9417 10 94 9418 Power gain of the first IF amplifier versus I4 20 30 40 50 60 70 80 90 100 f ( MHz ) Power gain of the first IF amplifier versus frequency 3.8 3.6 3.4 T = 90°C V4 ( V ) 3.2 3.0 T = –30°C 2.8 T = 30°C 2.6 2.4 2.2 2 0 94 9419 20 40 60 80 100 120 140 I4 ( m A ) V (Pin 4) versus I4 14 (23) Rev. A3, 15-Oct-98 U4065B 2nd IF Preamplifier VS 330 1:2 IL1 50 fIF 2viIF 1 5 viIF5 5 3 IF Rg5 = 200 2 2:1 voIF3 RL3 = 200 voIF IL2 ÎÎÎ 2 1 6 5 50 Tamb 6 Power gain GIF = 20 log (voIF/viIF) + IL1 (dB) + IL2 (dB) IL1; IL2 = insertion loss of the RF transformers 94 9420 20 18.5 18 18.0 16 14 GIF2 ( dB ) GIF2 ( dB ) 17.5 17.0 16.5 12 10 8 6 16.0 4 15.5 2 15 –30–20–10 0 10 20 30 40 50 60 70 80 90 94 9421 Tamb ( °C ) Power gain of the second IF amplifier versus temperature Rev. A3, 15-Oct-98 0 10 94 9422 20 30 40 50 60 70 80 90 100 f ( MHz ) Power gain of the second IF amplifier versus frequency 15 (23) 87.0 10000.00 86.8 1000.00 100.00 86.6 I10 ( m A ) Threshold ( dBmV ) U4065B 86.4 I10 (–30°C ) / mA I10 (30°C ) / mA 1.00 I10 (90°C ) / mA 86.2 86.0 –30 10.00 0.10 0.01 –10 10 30 50 70 80 90 Tamb ( °C ) 94 9423 85 90 AGC threshold (I10 = 1 mA) of the second IF amplifier versus temperature 95 100 105 viIF ( dBmA ) 94 9424 AGC characteristic of the second IF amplifier input Interference Sensor (Mixer) 50 15 IL1 2viRF1 fiRF1 1 2viRF2 fiRF2 5 2 Rg15/16 =200 6 Interference 11 RL11 = 200 IL2 16 mixer 2 1 6 5 voIF fIF 50 fLO Local oscillator VS IL1=IL2=0.7dB 94 9425 Test conditions for characteristic voIF versus viRF1: fLO = 100 MHz, fRF1 = 89.3 MHz, viRF2 = 0, fIF = fLO – fRF1 = 10.7 MHz Test conditions for 3rd order IM-characteristic voIF versus viRF1, viRF2: fLO = 100 MHz. fRF1 =89.4 MHz, fRF2 = 89.5 MHz, fIF = fLO – (2 fRF1 –1 fRF2) = 10.7 MHz IL1, IL2 = insertion loss of the RF transformer 16 (23) Rev. A3, 15-Oct-98 U4065B 90 100 80 90 70 80 vo IF ( dB mV ) vo IF ( dB mV ) 60 50 40 Conversion characteristic 30 20 3rd order IM-characteristic 10 0 70 60 50 –30°C 40 30°C 30 90°C 20 60 65 70 75 80 85 90 95 viRF ( dBmV ) 94 9426 70 100 94 9428 Characteristic of the interference sensor (mixer) 75 80 85 90 95 100 105 110 115 viRF ( dBmV ) Conversion characteristic of the interference sensor (mixer) 80 70 vo IF ( dB mV ) 60 50 –30°C 40 30°C 90°C 30 20 70 75 80 85 90 95 100 105 110 115 viRF1, viRF2 ( dBmV ) 94 9427 Third order interference characteristic of the interference sensor (mixer) Interference Sensor (Amplifier) 1:2 IL1 50 fIF 2viIF viIF9 9 I10 Rg9 = 200 1 2 5 6 VS Tamb IL1=0.7dB Rev. A3, 15-Oct-98 10 IF 94 9429 17 (23) U4065B AGC Thresholds 105 45.0 44.5 100 43.5 viRF ( dB mV ) Threshold ( dBmV ) 44.0 43.0 42.5 95 88 MHz 90 42.0 98 MHz 41.5 108 MHz 41.0 –30–20–10 0 10 20 30 40 50 60 70 80 90 Tamb ( °C ) 94 9430 85 0 94 9433 AGC threshold of the interference IF amplifier versus temperature 5 10 15 20 25 30 35 40 45 50 55 I13 ( mA ) Wideband AGC threshold (I10 = 1 mA) versus I13 100 98 U13 = 0 V 96 viRF 15/16 94 92 I13 = 30 mA 90 88 86 I13 = 0 A 84 82 80 –30–20–10 0 10 20 30 40 50 60 70 80 90 94 9432 Tamb ( °C ) Wideband AGC threshold (I10 = 1 mA) versus temperature 18 (23) Rev. A3, 15-Oct-98 U4065B AGC Characteristics 1000.00 1000.00 100.00 100.00 I 10 ( m A ) 10000.00 I10 (m A ) 10000.00 10.00 –30°C 1.00 10.00 –30°C 1.00 30°C 0.10 30°C 0.10 90°C 0.01 90°C 0.01 35 45 55 65 75 85 95 viIF ( dBmV ) 94 9431 80 94 9435 AGC characteristic of the interference IF & detector block 85 90 95 100 105 110 115 120 viRF ( dBmV ) Characteristic of the wideband AGC (I13 = 0 V) 10000.00 1000.00 I10 ( m A ) 100.00 10.00 –30°C 1.00 30°C 0.10 90°C 0.01 90 95 94 9434 100 105 110 115 120 viRF ( dBmV ) Characteristic of the wideband AGC (V13 = 0 V) Rev. A3, 15-Oct-98 19 (23) U4065B DC Characteristics 3.88 18 16 3.87 I6 14 3.86 10 Vref ( V ) I ( mA ) 12 I18, I19 8 6 3.85 3.84 3.83 4 2 3.82 I3 0 6 6.5 7.0 7.5 8.0 8.5 9.0 VS ( V ) 94 9436 3.81 –30–20–10 0 10 20 30 40 50 60 70 80 90 9.5 10.0 Supply currents versus supply voltage Reference voltage versus temperature 40 4.00 35 I3 + I6 + I18 + I19 3.95 30 3.90 20 Vref ( V ) I ( mA ) 25 I6 15 3.80 I3 5 0 –30 –10 10 30 50 70 Tamb ( °C ) Supply currents versus temperature 20 (23) 3.85 I18, I19 10 94 9437 Tamb ( °C ) 94 9438 90 3.75 –10 94 9439 –8 –6 –4 –2 0 2 I17 ( mA ) Reference voltage versus I17 Rev. A3, 15-Oct-98 Rev. A3, 15-Oct-98 R10 (Tracking adj.) 94 9440 1.5k C21 1n appr. 8mA R7 56k R4 470 1n C7 R6 47k L2 2.2uH C8 R5 Application diagram 22 R13 C12 18p 10p 120k R11 56k 1n C13 D4 L4 1p5 C10 1n 6.8p Q1 C1 2p7 C2 3 S391D R1 1n 22 R2 100 D1 S392D R3 C5 10n 56k 4 L3 D3 1 6 6 L5 4 100p 820 C20 C23 C26 150n C11 1 12 10n CF2 Q2 BC858 C25 27p R9 220 VAGC 21 (23) 1n VTUN 1.7–6.5V C9 Vs=8.5V R18 22 330 C19 22n R12 330k R15 R20 22k C24 CF4 100k R21 1n Gain adj. C15 100n IF OUT LO OUT U4065B C4 1n 220nH ANT 75 OHM 22p 47p 4.7p 24 CF1 470n C22 6.8p U4065B 10n C6 OSC D5 CF3 C17 C3 L1 L6 R17 470 13 BFR93A D2 1 IF 2 C18 3 R14 160k C14 C16 R19 10k R16 15 U4065B Part List Item Description Item Description Q1 BFR93AR (BFR93A) L4 Q2 BC858 D1 S392D D2 S391D D3, 4, 5 BB804 L1 11 turns, 0.35 mm wire, 3 mm diameter (approx. 220 nH) 2.2 mH (high Q type) TOKO 7KL–type # 291ENS 2341IB TOKO 7KL–type # M600BCS-1397N TOKO 7KL–type # 291ENS 2054IB TOKO type SKM 2 (230 KHZ) TOKO type SKM 3 (180 KHZ) L2 L3 L5 L6 CF1 CF2, 3, 4 TOKO 7KL–type # 600ENF-7251x Ordering and Package Information Extended type number Package U4065B-AFL SO 24 plastic U4065B-AFLG3 SO 24 plastic Remarks Taping according ICE-286-3 Dimensions in mm Package SO24 Dimensions in mm 9.15 8.65 15.55 15.30 7.5 7.3 2.35 0.25 0.10 0.4 0.25 10.50 10.20 1.27 13.97 24 13 technical drawings according to DIN specifications 13037 1 22 (23) 12 Rev. A3, 15-Oct-98 U4065B Ozone Depleting Substances Policy Statement It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2594, Fax number: 49 ( 0 ) 7131 67 2423 Rev. A3, 15-Oct-98 23 (23)