U4283BM AM / FM - PLL Description The U4283BM is an integrated circuit in BICMOS technology for frequency synthesizer. It performs all the functions of a PLL radio tuning system and is controlled by I2C bus. The device is designed for all frequency synthesizer applications of radio receivers, as well as RDS (Radio Data System) applications. Features D Reference oscillator up to 15 MHz D Two programmable 16 bit dividers D Three programmable switching outputs (open drain up to 20 V) D Few external component requirements due adjustable from 2 to 65535 D Fine tuning steps: AM FM y 1 kHz y 2 kHz to integrated loop-transistor for AM/FM D High signal/ noise ratio Block Diagram PRT SWO1 SWO2 SWO3 OSCIN OSCOUT SCL SDA AS FMOSC 5 18 Oscillator 6 7 8 AM/FM 9 Switching outputs R-Divider 19 Latch 2 3 4 Latch I2C–BUS Interface Status Shift register 14 Latch Phase detector 10 Preamplifier :2 12 Preamplifier AMOSC AM/FM switch N–Divider 11 1 GND 2 VDD Current sources 15 PDFM PDAM 13 Analogue outputs 16 PDFMO Lock detector LD 17 PDAMO 20 GND 1 94 8054 e Figure 1. Ordering and Package Information Extended Type Number U4283BM-BFL U4283BM-BFLG3 U4283BM-BFS TELEFUNKEN Semiconductors Rev. A1, 15-May-96 Package SO20 plastic SO20 plastic SSO20 plastic Remarks Taping according to IEC-286-3 1 (9) Preliminary Information U4283BM Pin Description VDD 1 20 GND1 SCL 2 19 OSCOUT SDA 3 18 OSCIN AS 4 17 LD PRT 5 16 PDAMO U4283BM SWO 1 6 15 PDAM SWO 2 7 14 PDFM SWO 3 8 13 PDFMO AM/FM 9 12 AMOSC FMOSC 10 11 GND2 Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Symbol VDD SCL SDA AS PRT SWO 1 SWO 2 SWO3 AM/FM FMOSC GND 2 AMOSC PDFMO PDFM PDAM PDAMO LD OSCIN OSCOUT GND 1 Function Supply voltage I2C bus clock I2C bus data Address selection Switching port Switching output 1 Switching output 2 Switching output 3 Switching output AM/FM FM oscillator input Ground 2 (analogue) AM oscillator input FM analogue output FM current output AM current output AM analogue output Lock detector Oscillator input Oscillator output Ground 1 (digital) 94 8055 e Functional Description The U4283BM is controlled via the 2-wire I2C bus. For programming there are one module address byte, two subaddress bytes and five data bytes. Each transmission on the I2C bus begins with the “START ”-condition and has to be ended by the “STOP”condition (see figure 3). The module address contains a programmable address bit A 1 which with address select input AS (Pin 4) makes it possible to operate two U4283BM-B in one system. If bit A 1 is identical with the status of the address select input AS, the chip is selected. The integrated circuit U 4283 BM has two separate inputs for AM and FM oscillator. Pre-amplified AM signal is directed to the 16 bit N-divider via AM/FM switch, whereas (pre-amplified) FM signal is first divided by a fixed prescaler ( :2 ). AM/FM switch is controlled by software. Tuning steps can be selected by 16 bit R-divider. Further there is a digital memory phase detector. There are two separate current sources for AM and FM amplifier (charge pump) as given in electrical characteristics. It allows independent adjustment of gain, whereby providing high current for high speed tuning and low current for stable tuning. The subaddress determines which one of the data bytes is transmitted first. If subaddress of R-divider is transmitted, the sequence of the next data bytes is DB 0 (Status), DB 1 and DB 2. If subaddress of N-divider is transmitted, the sequence of the next data bytes is DB 3 and DB 4. The bit organisation of the module address, subaddress and 5 data bytes are shown in figure 2 2 (9) Preliminary Information TELEFUNKEN Semiconductors Rev. A1, 15-May-96 U4283BM Bit Organization Module address MSB 1 A7 1 A6 0 A5 0 A4 1 A3 0 A2 0/1 A1 LSB 0 A0 Subaddress (R-divider) X X X X 0 1 X X Subaddress (N-divider) X X X X 1 1 X X Data byte 0 (Status) MSB PRT SWO1 SWO2 SWO3 D7 D6 D5 D4 AM/ FM D3 PD ANA D2 PD POL D1 LSB PD CUR D0 Data byte 1 215 R-divider 28 Data byte 2 27 R-divider 20 Data byte 3 215 N-divider 28 Data byte 4 27 N-divider 20 AM/FM PD - ANA PD - POL PD - CUR LOW FM-operation PD analog Negative polarity Output current 2 HIGH AM-operation TEST Positive polarity Output current 1 Figure 2. TELEFUNKEN Semiconductors Rev. A1, 15-May-96 3 (9) Preliminary Information U4283BM Transmission Protocol S MSB LSB Address A7 A0 A Subaddress R-divider A Data 0 A Data 1 A S MSB LSB Address A7 A0 A Subaddress N-divider A Data 3 A Data 4 A S = Start P = Stop Data 2 A P P A A = Acknowledge Figure 3. Absolute Maximum Ratings Parameters Supply voltage Pin 1 Input voltage Pins 2, 3, 4, 10, 12, 18 and 19 Output current Pins 3, 5, 6, 7, 8 and 9 Output drain voltage Pins 6, 7, 8 and 9 Output voltage Pins 13 and 16 Output current Pins 13 and 16 Ambient temperature range Storage temperature range Junction temperature Electrostatic handling (MIL Standard 883C) Symbol VDD VI IO VOD VAO IAO Tamb Tstg Tj VESD Value –0.3 to +6 –0.3 to VDD +0.3 –1 to +5 20 15 –1 to +20 –25 to +85 –40 to +125 125 2000 Unit V V mA V V mA _C _C _C V Symbol RthJA Value 160 Unit K/W " Thermal Resistance Parameters Junction ambient 4 (9) Preliminary Information TELEFUNKEN Semiconductors Rev. A1, 15-May-96 U4283BM Electrical Characteristics VDD = 5 V, Tamb = 25°C, unless otherwise specified. Parameters Test Conditions / Pins Symbol Min. Supply voltage Pin 1 VDD 4.5 Quiescent supply current Pin 1 IDD FM input sensitivity, RG = 50 W FMOSC fi = 70 to 120 MHz Pin 10 VSFM 25 fi = 120 to 130 MHz Pin 10 VSFM 50 AM input sensitivity, RG = 50 W AMOSC fi = 0.5 to 35 MHz Pin 12 VSAM 25 Oscillator input sensitivity, RG = 50 W OSCIN fi = 0.1 to 15 MHz Pin 14 VSOSC 100 Switching output SWO 1, SWO 2, SWO3, AM/FM (open drain) Output voltage Pins 6, 7, 8 and 9 VSWOL LOW IL = 1 mA VSWOL IL = 0.1 mA LOW Pins 6, 7, 8 and 9 Output leakage current IOHL V5, V6 = 20 V HIGH Lock detector output (open drain) Output voltage I = 3 mA LOW Switching output PRT Pin 5 Output voltage IL = 1 mA VOH VDD –0.4 HIGH VOL IL = 1 mA LOW VOL IL = 0.1 mA LOW Phase detector PDFM Output current 1 Pin 14 IPDFM 400 IPDFM Output current 2 Pin 14 100 Phase detector PDAM Output current 1 Pin 15 IPDAM 75 IPDAM Output current 2 Pin 15 20 Analogue output PDFMO, PDAMO Saturation voltage I = 15 mA Vsat Pins 13 and 16 Leakage current Pins 13 and 16 ILEAK I2C bus SCL, SDA, AS Input voltage Pins 2, 3 and 4 ViBUS 3.0 HIGH 0 LOW Output voltage ISDA = 3 mA Pin 3 VO Acknowledge LOW Clock frequency Pin 2 fSCL Rise time SDA, SCL Pins 2 and 3 tr " " " " TELEFUNKEN Semiconductors Rev. A1, 15-May-96 Typ. 5.0 6.0 Max. 5.5 11.6 Unit V mA mV mV mV mV 200 20 400 100 mV mV 100 nA 0.4 V 0.4 0.1 V V V 500 125 600 150 mA mA 100 25 125 30 mA mA 270 400 1 mV mA VDD 1.5 V V 0.4 100 1 V kHz ms 5 (9) Preliminary Information U4283BM Parameters Fall time SDA, SCL Period of SCL HIGH LOW Setup Time Start condition Data Stop condition Time the bus must be free before a new transmission can be started Hold time Start condition DATA Test Conditions / Pins Pins 2 asn 3 Pin 2 Symbol tf Min. Typ. Max. 300 Unit ns tH tL 4.0 4.7 ms ms tsSTA tsDAT tsSTOP 4.7 250 4.7 ms twSTA 4.7 ms thSTA thDAT 4.0 0 ms ms ns ms Bus Timing SDA twSTA tr tf thSTA SCL P S thSTA tL thDAT tH tsSTA thDAT P = Stop, S = Start tsSTOP P 93 7671 e Figure 4. The following hints are recommended: D C3 = 100 nF should be very close to Pin 1 (VDD) and Pin 20 (GND1) D GND2 (Pin 10 - analog ground) and GND 1 (Pin 20 - digital ground ) must be connected according to figure 6 D 4 MHz quartz must be very close to Pin 18 and Pin 19 D Components of the charge pump (C1/R1 for AM and C2/R2 for FM) should be very close to Pin 15 with respect to Pin 14. 6 (9) Preliminary Information TELEFUNKEN Semiconductors Rev. A1, 15-May-96 U4283BM Application Circuit 12 V 220 m 16 V 220 10 k 1k 1n 3k 10 k R1 27 p 27 p 33 k 2.2 n C2 220 n 18 19 FMOSC 150 p R2 C1 4 MHz 20 AMOSC 6.8 n 56 k 100 n 17 16 15 14 13 12 11 7 8 9 10 C3 U4283BM 100 n 1 C4 3 2 4 5 6 100 m 6.3 V 1n 27 12 k 12 k 22 k 22 k 22 k 22 k 20 V 5V 94 8056 e Figure 5. PCB-Layout GND C4 VDD C2 C1 20 19 18 17 16 15 14 13 12 11 1 2 3 4 5 6 7 8 9 10 C3 94 8057 e Figure 6. TELEFUNKEN Semiconductors Rev. A1, 15-May-96 7 (9) Preliminary Information U4283BM Package Information Package SO20 9.15 8.65 Dimensions in mm 12.95 12.70 7.5 7.3 2.35 0.25 0.25 0.10 0.4 10.50 10.20 1.27 11.43 20 11 technical drawings according to DIN specifications 13038 1 10 Package SSO20 5.7 5.3 4.5 4.3 Dimensions in mm 6.75 6.50 1.30 0.15 0.15 0.05 0.25 6.6 6.3 0.65 5.85 20 11 technical drawings according to DIN specifications 13007 1 10 8 (9) Preliminary Information TELEFUNKEN Semiconductors Rev. A1, 15-May-96 U4283BM Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 TELEFUNKEN Semiconductors Rev. A1, 15-May-96 9 (9) Preliminary Information