FAIRCHILD FGA70N30T

FGA70N30T
300V, 70A PDP IGBT
tm
Features
General Description
• High current capability
Using Novel Trench IGBT Technology, Fairchild’s new sesries
of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
• Low saturation voltage: VCE(sat) =1.5V @ IC = 40A
• High input impedance
• Fast switching
• RoHS complaint
Application
. PDP System
C
G
TO-3P
G C E
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Units
300
V
VCES
Collector-Emitter Voltage
VGES
Gate-Emitter Voltage
±30
V
IC pulse(1)*
Pulsed Collector Current
@ TC = 25oC
160
A
Maximum Power Dissipation
@ TC = 25oC
201
W
PD
Maximum Power Dissipation
o
@ TC = 100 C
90.6
W
TJ
Operating Junction Temperature
-55 to +150
oC
Tstg
Storage Temperature Range
-55 to +150
o
C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
o
C
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
Max.
--
0.62
o
C/W
40
o
C/W
--
Units
Notes:
(1)Repetitive test , pluse width = 100usec , Duty = 0.2
* Ic_pluse limited by max Tj
©2006 Fairchild Semiconductor Corporation
FGA70N30T Rev. A
1
www.fairchildsemi.com
FGA70N30T 300V, 70A PDP Trench IGBT
December 2007
Device Marking
Device
Package
Packaging
Type
Qty per Tube
Max Qty
per Box
FGA70N30T
FGA70N30TTU
TO-3P
Tube
30ea
-
Electrical Characteristics T
C
Symbol
= 25oC unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250uA
300
--
--
V
∆BVCES/
∆TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250uA
--
0.2
--
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
--
250
uA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
--
± 400
nA
IC = 250uA, VCE = VGE
3.0
4.5
5.5
V
IC =20A, VGE = 15V
--
1.2
1.5
V
IC =40A, VGE = 15V
--
1.5
--
V
IC =70A, VGE = 15V
TC = 25oC
--
1.8
--
V
IC = 70A, VGE = 15V
TC = 125oC
--
1.9
--
V
--
3000
--
pF
VCE = 30V, VGE = 0V
f = 1MHz
--
160
--
pF
--
110
--
pF
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
VCC = 200V, IC = 40A
RG = 15Ω, VGE = 15V
Resistive Load, TC = 25oC
VCC = 200V, IC = 40A
RG = 15Ω, VGE = 15V
Resistive Load, TC = 125oC
VCE = 200V, IC = 40A
VGE = 15V
2
FGA70N30T Rev. A
--
32
--
ns
--
90
--
ns
--
175
--
ns
--
170
300
ns
--
30
--
ns
--
90
--
ns
--
185
--
ns
--
235
--
ns
--
125
--
nC
--
25
--
nC
--
55
--
nC
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FGA70N30T 300V, 70A PDP Trench IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
160
160
o
TC = 25 C
20V
15V
12V
120
80
VGE = 8V
40
2
4
6
Collector-Emitter Voltage, VCE [V]
80
VGE = 8V
40
0
8
Figure 3. Typical Saturation Voltage
Characteristics
2
4
6
Collector-Emitter Voltage, VCE [V]
8
Figure 4. Transfer Characteristics
160
160
Common Emitter
Common Emitter
VGE = 15V
100 VCE = 20V
o
o
TC = 25 C
120
Collector Current, IC [A]
Collector Current, IC [A]
20V
15V
12V
0
0
o
TC = 125 C
80
40
0
0
1
2
3
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
40A
IC = 20A
12
3
Common Emitter
o
T = 25 C
C
16
12
8
40A
4
70A
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
FGA70N30T Rev. A
4
6
8
10
Gate-Emitter Voltage,VGE [V]
20
1.6
0.8
25
10
Figure 6. Saturation Voltage vs. VGE
70A
1.2
o
TC = 125 C
2
Common Emitter
VGE = 15V
2.0
TC = 25 C
1
4
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
2.4
10V
120
0
Collector-Emitter Voltage, VCE [V]
o
TC = 125 C
10V
Collector Current, IC [A]
Collector Current, IC [A]
Figure 2. Typical Output Characteristics
IC = 20A
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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FGA70N30T 300V, 70A PDP Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
6000
20
Collector-Emitter Voltage, VCE [V]
Figure 8. Capacitance Characteristics
Common Emitter
VGE = 0V, f = 1MHz
Common Emitter
o
T = 125 C
5000
C
o
TC = 25 C
Capacitance [pF]
16
12
8
Ciss
3000
2000
Coss
40A
4
1000
70A
0
4000
IC = 20A
4
Crss
0
8
12
16
Gate-Emitter Voltage, VGE [V]
1
20
Figure 9. Gate Charge Characteristics
30
10
Collector-Emitter Voltage, VCE [V]
Figure 10. SOA Characteristics
15
Common Emitter
IC MAX (Pulsed)
12
Collector Current, IC [A]
Gate-Emitter Voltage, VGE [V]
o
TC = 25 C
Vcc = 200V
100V
9
6
100µs
1ms
10
IC MAX (Continuous)
Single Nonrepetitive
o
0
30
60
90
120
Gate Charge, Qg [nC]
150
DC Operation
Pulse TC = 25 C
Curves must be derated
linearly with increase
in temperature
0.01
0.1
0
10ms
1
0.1
3
50µs
100
1
10
100
Collector - Emitter Voltage, VCE [V]
500
Figure 12. Turn-off Characteristics vs.
Gate Resistance
Figure 11. Turn-on Characteristics vs.
Gate Resistance
3000
300
Switching Time [ns]
Switching Time [ns]
1000
100
tr
Common Emitter
VCC = 200V, VGE = 15V
IC = 40A
td(on)
tf
100
Common Emitter
VCC = 200V, VGE = 15V
IC = 40A
td(off)
o
o
TC = 25 C
TC = 25 C
o
o
TC = 125 C
TC = 125 C
10
10
0
20
40
60
80
0
100
Gate Resistance, RG [Ω]
40
60
80
100
Gate Resistance, RG [Ω ]
4
FGA70N30T Rev. A
20
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FGA70N30T 300V, 70A PDP Trench IGBT
Typical Performance Characteristics (Continued)
Figure 13. Turn-on Characteristics vs.
Collector Current
500
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
Common Emitter
VGE = 15V, RG = 15Ω
Common Emitter
VGE = 15V, RG = 15Ω
o
o
TC = 25 C
TC = 25 C
tr
TC = 125 C
o
100
td(on)
10
0
20
40
60
80
TC = 125 C
Switching Time [ns]
Switching Time [ns]
o
tf
td(off)
tf
100
100
0
20
Collector Current, IC [A]
40
60
80
100
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
Figure 16. Switching Loss vs. Collector Current
10000
2000
Common Emitter
VGE = 15V, RG = 15Ω
1000
o
Eoff
TC = 25 C
100
Switching Loss [uJ]
Switching Loss [uJ]
o
Eon
Common Emitter
VCC = 200V, VGE = 15V
IC = 40A
TC = 125 C
1000
100
Eon
o
TC = 25 C
Eoff
o
TC = 125 C
10
0
20
40
60
80
Gate Resistance, RG [Ω]
10
100
0
20
40
60
80
100
Collector Current, IC [A]
Figure 17. Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
0.5
0.1
0.2
0.1
0.05
0.01
0.02
0.01
PDM
t1
single pulse
1E-3
1E-5
1E-4
t2
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
5
FGA70N30T Rev. A
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FGA70N30T 300V, 70A PDP Trench IGBT
Typical Performance Characteristics (Continued)
FGA70N30T 300V, 70A PDP Trench IGBT
TO-3PN
6
FGA70N30T Rev. A
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to
improve design.
Obsolete
Not In Production
Rev. I20disThis datasheet contains specifications on a product that has been
continued by Fairchild Semiconductor.The datasheet is printed for reference information only.
Rev. I25
7
FGA70N30T Rev. A
www.fairchildsemi.com
FGA70N30T 300V, 70A PDP Trench IGBT
tm