GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application · The 5th generation · Enhancement-mode · High speed : tf = 0.41 µs (typ.) (IC = 40A) · Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A) · FRD included between emitter and collector Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±25 V @ Tc = 100°C Continuous collector current @ Tc = 25°C Pulsed collector current Diode forward current IC 23 42 ICP 80 DC IF 10 Pulsed IFP 80 @ Tc = 100°C A A A 68 W 170 W Tj 150 °C Tstg −55 to 150 °C Characteristics Symbol Max Unit Thermal resistance (IGBT) Rth (j-c) 0.74 °C/W Thermal resistance (diode) Rth (j-c) 1.79 °C/W Collector power dissipation @ Tc = 25°C Junction temperature Storage temperature range PC JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g (typ.) Thermal Characteristics Equivalent Circuit Collector Gate Emitter 1 2003-02-05 GT40Q321 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±25 V, VCE = 0 ― ― ±500 nA Collector cut-off current ICES VCE = 1200 V, VGE = 0 ― ― 5.0 mA VGE (OFF) IC = 40 mA, VCE = 5 V 4.0 ― 7.0 V Gate-emitter cut-off voltage Collector-emitter saturation voltage VCE (sat) Input capacitance Cies tr Rise time Switching time Turn-on time ton Fall time tf Turn-off time IC = 40 A, VGE = 15 V ― 2.8 3.6 V VCE = 10 V, VGE = 0, f = 1 MHz ― 3200 ― pF Resistive Load ― 0.19 ― VCC = 600 V, IC = 40 A ― 0.25 ― VGG = ±15 V, RG = 39 W ― 0.41 0.72 ― 0.57 ― (Note 1) toff µs Diode forward voltage VF IF = 10 A, VGE = 0 ― ― 2.0 V Reverse recovery time trr IF = 10 A, di/dt = −20 A/µs ― 0.6 ― µs Note 1: Switching time measurement circuit and input/output waveforms VGE 90% 10% 0 RG RL IC 0 90% VCC 0 90% 10% VCE 10% td (off) tf toff tr ton General Safety Precautions and Usage Considerations · The GT40Q321 is only intended for single-transistor voltage resonant circuits in induction heating (IH) equipment. For other applications, please contact your nearest Toshiba sales office. · Do not use devices under conditions in which their maximum ratings will be exceeded. A device may break down or its performance may be degraded, causing it to catch fire or explode resulting in injury to the user. It is therefore necessary to incorporate device derating into circuit design. · In all IGBT devices, maximum collector-emitter voltage (VCES) decreases when the junction temperature becomes low. It is therefore necessary to incorporate device derating into circuit design. · Maximum collector current is calculated from Tj MAX.(150°C), the thermal resistance and DC forward power dissipation. However it’s limited in real application by another factors such as switching loss, limitation of the inner bonding wires and so on. 2 2003-02-05 GT40Q321 IC – VCE VCE – VGE 10 15 Common emitter 12 60 (V) 20 VCE Common emitter Tc = 25°C 10 Collector-emitter voltage Collector current IC (A) 80 40 VGE = 8 V 20 0 0 1 2 3 Collector-emitter voltage 4 VCE Tc = -40°C 8 6 80 4 2 0 0 5 (V) 40 IC = 10 A 5 20 10 15 Gate-emitter voltage VGE VCE – VGE (V) (V) VCE 8 Collector-emitter voltage VCE Collector-emitter voltage Common emitter Tc = 25°C 6 80 4 40 20 IC = 10 A 5 10 15 Gate-emitter voltage VGE 20 Tc = 125°C 8 6 40 4 20 2 0 0 25 80 (V) IC = 10 A 5 10 Collector-emitter saturation voltage VCE (sat) (V) (A) IC Collector current 40 20 25 Tc = 125°C 4 20 25 (V) VCE (sat) – Tc 6 Common emitter VCE = 5 V 60 0 0 15 Gate-emitter voltage VGE IC – VGE 80 (V) 10 Common emitter 0 0 25 VCE – VGE 10 2 20 Common emitter VGE = 15 V 5 80 4 40 3 20 2 IC = 10 A 1 -40 8 Gate-emitter voltage VGE 12 0 -60 16 (V) -20 20 60 Case temperature Tc 3 100 140 (°C) 2003-02-05 GT40Q321 VCE, VGE – QG C – VCE (V) Common emitter RL = 7.5 W Tc = 25°C VCE = 300 V 100 V 10 200 V 100 5 0 0 50 100 Gate charge 5000 3000 Cies 1000 500 300 Coes 100 Common emitter 50 V GE = 0 30 f = 1 MHz Tc = 25°C 10 0.1 1 0.3 0 200 150 QG 10000 (pF) 15 Capacitance C 300 200 50000 30000 20 Gate-emitter voltage VGE Collector-emitter volgate VCE (V) 400 (nC) Switching time 1 Common emitter VCC = 600 V RG = 39 W VGG = ±15 V Tc = 25°C 0.5 toff 0.3 tf 0.1 ton tr 0.05 0.01 0 10 20 30 Collector current IC 40 tf 0.3 ton tr 0.1 0.05 3 (A) 10 IC max (continuous) (A) 10 ms* 10 500 300 100 50 30 10 5 3 DC operation 3 1000 Tj £ 125°C VGG = 20 V RG = 10 W 1000 10 ms* 10 5 3 100 ms* 300 Reverse bias SOA 100 IC max (pulsed)* 1 ms* 100 5000 3000 IC 500 300 30 Gate resistance RG (W) Collector current (A) IC (V) toff 0.5 0.01 1 50 *Single non-repetitive pulse Tc = 25°C Curves must be derated linearly with increases in temperature. 1000 Collector current 1000 Common emitter 3 VCC = 600 V IC = 40 A VGG = ±15 V Tc = 25°C 1 Safe operating area 5000 3000 1 1 VCE 300 0.03 0.03 50 30 100 30 Switching time – RG (ms) (ms) 3 10 5 Switching time 5 3 Collector-emitter voltage Switching time – IC 10 Cres 30 100 300 Collector-emitter voltage 1000 VCE 1 1 3000 10000 (V) 3 10 30 100 300 Collector-emitter voltage 4 1000 3000 10000 VCE (V) 2003-02-05 GT40Q321 rth (t) – tw Common emitter Tc = 25°C 102 VGE = 15 V Transient thermal impedance rth (t) (°C/W) 40 30 20 101 Diode stage 10 0 IGBT stage 10-1 10-2 10 10-3 10-5 0 25 50 75 100 Case temperature Tc 125 10-4 10-3 150 tw 101 (s) trr, Irr – IF 0.8 -40 8 25 (ms) Tc = 125°C (A) Common collector VGE = 0 0.6 trr 60 40 20 10 0 1 2 Forward voltage 102 (°C) Reverse recovery time (A) Forward current IF 100 10-1 Pulse width IF – VF 80 10-2 3 VF 0.4 (V) Irr 4 0.2 2 Common collector di/dt = -20 A/ms 0 0 4 6 trr Tc = 25°C 10 20 Forward current 30 IF 40 Reverse recovery current Irr Maximum DC collector current ICmax (A) ICmax – Tc 50 0 50 (A) trr, Irr – di/dt 16 (A) 0.8 20 Common collector IF = 10 A Tc = 25°C 0.6 12 trr 0.4 0.2 0.0 0 8 Irr 4 50 100 di/dt 150 200 Reverse recovery current Reverse recovery time trr Irr (ms) 1.0 0 250 (A/ms) 5 2003-02-05 GT40Q321 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2003-02-05