GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm · Supplied in Compact and Thin Package Requires Only a Small Mounting Area · 4th generation (trench gate structure) IGBT · Enhancement-mode · 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) · Peak collector current: IC = 150 A (max) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VCES 400 V DC VGES ±6 Pulse VGES ±8 Collector-emitter voltage Gate-emitter voltage V DC IC 8 1 ms ICP 150 Collector power dissipation (Note 1) PC 1.1 W Junction temperature Tj 150 Tstg -55~150 Collector current Storage temperature range A 2 JEDEC ― °C JEITA ― °C TOSHIBA Note 1: Drive operation: Mount on glass epoxy board [1 inch ´ 1.5 t] 2-6J1C Weight: 0.080 g (typ.) Equivalent Circuit 8 7 6 5 1 2 3 4 These devices are MOS type. Users should follow proper ESD handling procedures. Operating condition of turn-off dv/dt should be lower than 400 V/ms. 1 2003-03-18 GT8G131 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±6 V, VCE = 0 ¾ ¾ ±10 mA Collector cut-off current ICES VCE = 400 V, VGE = 0 ¾ ¾ 10 mA VGE (OFF) IC = 1 mA, VCE = 5 V 0.6 ¾ 1.5 V IC = 150 A, VGE = 4 V ¾ 3.0 7.0 V VCE = 10 V, VGE = 0, f = 1 MHz ¾ 3800 ¾ pF ¾ 1.5 ¾ ¾ 1.7 ¾ ¾ 1.9 ¾ ¾ 2.4 ¾ ¾ ¾ 114 Collector-emitter saturation voltage VCE (sat) Input capacitance Cies Rise time tr 4V 0 Turn-on time Switching time Fall time tf Turn-off time Thermal resistance 51 W ton toff (Note 2) VIN: tr < = 100 ns tf < = 100 ns Duty cycle < = 1% 2.0 9 Gate-emitter cut-off voltage 300 V ¾ Rth (j-a) ms °C/W 2 Note 2: Drive operation: Mount on glass epoxy board [1 inch ´ 1.5 t] Marking GT8G131 Type ※ Lot No. ● on lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2003-03-18 GT8G131 IC – VCE IC – VCE 200 Common emitter Tc = -40°C 200 4.5 V 4.0 V 160 (A) 120 2.5 V 40 0 1 2 3 Collector-emitter voltage 4 VCE 80 2.5 V 40 0 5 3.0 V 0 1 (V) 2 4.0 V Common emitter Tc = 125°C (V) 4.5 V 160 4.0 V VGE = 5 V 3.5 V IC VGE = 5 V (A) 3.5 V 120 120 3.0 V 80 2.5 V 40 0 0 1 2 3 Collector-emitter voltage 4 VCE 3.0 V 80 2.5 V 40 0 5 0 1 2 IC – VGE 4 VCE 5 (V) VCE (sat) – Tc 5 25°C 70°C Collector-emitter saturation voltage VCE (sat) (V) Common emitter VCE = 5 V IC 160 -40°C 120 Tc = 125°C 80 40 0 3 Collector-emitter voltage (V) 200 (A) VCE 5 IC – VCE Collector current (A) IC Collector current 160 4 200 4.5 V Common emitter Tc = 70°C 3 Collector-emitter voltage IC – VCE 200 Collector current 3.5 V VGE = 5 V 120 80 0 160 IC 3.0 V Collector current Collector current IC (A) 3.5 V 4.0 V 4.5 V Common emitter Tc = 25°C VGE = 5 V 0 1 2 3 Gate-emitter voltage VGE 4 Common emitter VGE = 4 V 4 IC = 150 A 3 120 A 60 A 1 0 -80 5 (V) 90 A 2 -40 0 40 80 Case temperature Tc 3 120 160 (°C) 2003-03-18 GT8G131 VCE – VGE VCE – VGE 5 (V) Common emitter Tc = -40°C IC = 150 A 3 Collector-emitter voltage Collector-emitter voltage Common emitter Tc = 25°C 4 VCE 4 VCE (V) 5 120 A 90 A 2 60 A 1 0 0 1 2 3 4 Gate-emitter voltage VGE IC = 150 A 3 60 A 2 1 0 5 120 A 90 A 0 1 (V) 2 (V) 3 120 A 90 A 60 A 2 1 0 1 2 3 4 Common emitter Tc = 125°C 4 VCE IC = 150 A Collector-emitter voltage (V) Collector-emitter voltage VCE 4 Gate-emitter voltage VGE IC = 150 A 90 A 60 A 2 1 0 5 120 A 3 0 1 2 (pF) 3000 Capacitance C (V) 5 C – VCE 1.2 0.8 0.4 Cies 1000 300 Coes 100 Cres Common emitter VGE = 0 V f = 1 MHz Tc = 25°C 30 -40 4 (V) 5000 Common emitter VGE = 5 V IC = 1 mA 0 -80 3 Gate-emitter voltage VGE (V) VGE (OFF) – Tc Gate-emitter cut-off voltage VGE (OFF) (V) 5 Common emitter Tc = 70°C 1.6 5 VCE – VGE VCE – VGE 2.0 4 Gate-emitter voltage VGE 5 0 3 0 40 80 Case temperature Tc 120 10 160 (°C) 1 3 10 30 Collector-emitter voltage 4 100 VCE 300 1000 (V) 2003-03-18 GT8G131 VCE, VGE – QG Switching Time – RG 20 500 5 toff 3 tf tr ton 8 300 6 VGE 200 2 100 VCE 1 10 30 50 100 0 0 300 Gate charge Switching Time – IC QG (nC) (mF) 800 tf ton 1 tr Common emitter VCE = 300 V VGE = 4 V RG = 51 W Tc = 25°C 0.3 0 50 600 CM toff 3 Main capacitance (ms) 0 80 60 Maximum Operating Area 10 Switching time 40 20 Gate resistance RG (9) 0.1 4 (V) VCE = 300 V 400 RL = 2.0 W Tc = 25°C Gate-emitter voltage VGE (V) VCE VCE = 300 V VGE = 4 V 10 IC = 150 A Tc = 25°C Collector-emitter voltage (ms) Switching time 10 Common emitter Common emitter 100 Collector current 150 IC 400 VCM = 350 V 200 Tc < = 70°C VGE = 4 V 20 W < = RG < = 200 W 0 200 0 40 80 120 Peak collector current (A) 160 ICP 200 (A) Minimum Gate Drive Area 160 Peak collector current ICP (A) 200 Tc = 25°C 120 70°C 80 40 0 0 2 4 Gate-emitter voltage VGE 6 8 (V) 5 2003-03-18 GT8G131 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2003-03-18