MIG150Q6CMB1X TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG150Q6CMB1X (1200V/150A 6in1) High Power Switching Applications Motor Control Applications · Integrates inverter power circuits and control circuits (IGBT drive units, and units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. · The electrodes are isolated from the case. · Low thermal resistance · VCE (sat) = 2.4 V (typ.) · UL recognized: File No.E87989 · Weight: 385 g (typ.) Equivalent Circuit 20 FO 19 18 FO IN VD GND GND VS 17 15 IN VD GND GND VS OUT 16 FO 13 12 11 10 IN VD GND GND VS OUT W 14 OUT V 9 8 7 6 5 4 3 2 1 GND IN FO VD GND IN FO VD GND IN FO VD GND VS GND VS GND VS OUT OUT U OUT N P 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 1 2001-11-13 MIG150Q6CMB1X Package Dimensions: TOSHIBA 2-123A1A Unit: mm 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 2 2001-11-13 MIG150Q6CMB1X Signal Terminal Layout Unit: mm 1. VD (U) 2. FO (U) 3. IN (U) 4. GND (U) 5. VD (V) 6. FO (V) 7. IN (V) 8. GND (V) 9. VD (W) 10. FO (W) 11. IN (W) 12. GND (W) 13. VD (L) 14. FO (L) 15. Open 16. Open 17. IN (X) 18. IN (Y) 19. IN (Z) 20. GND (L) 3 2001-11-13 MIG150Q6CMB1X Maximum Ratings (Tj = 25°C) Stage Characteristics Condition Supply voltage Symbol Rating Unit P-N power terminal VCC 900 V ¾ VCES 1200 V IC 150 A Collector-emitter voltage Inverter Collector current Tc = 25°C, DC Forward current Tc = 25°C, DC IF 150 A Collector power dissipation Tc = 25°C PC 1400 W Tj 150 °C ¾ Junction temperature Control supply voltage VD-GND terminal VD 20 V Input voltage IN-GND terminal VIN 20 V Fault output voltage FO-GND terminal VFO 20 V Fault output current FO sink current IFO 14 mA Control Operating temperature ¾ Tc -20~+100 °C Storage temperature range ¾ Tstg -40~+125 °C VISO 2500 V ¾ 3 N･m Module Isolation voltage AC 1 min Screw torque M5 Electrical Characteristics 1. Inverter stage Characteristics Collector cut-off current Collector-emitter saturation voltage Forward voltage Symbol ICEX VCE (sat) VF Test Condition VCE = 1200 V VD = 15 V IC = 150 A VIN = 15 V ® 0 V Switching time trr ¾ ¾ 1 ¾ ¾ 10 Tj = 25°C ¾ 2.4 2.8 Tj = 125°C ¾ 2.8 ¾ ¾ 2.4 2.8 ¾ 2.0 3.0 ¾ 0.6 ¾ ¾ 0.3 ¾ ¾ 1.0 2.0 ¾ 0.3 ¾ VCC = 600 V, IC = 150 A VD = 15 V, VIN = 15 V « 0 V Tj = 25°C, Inductive load (Note 1) tc (off) Max Tj = 25°C IF = 150 A, Tj = 25°C toff Typ. Tj = 125°C ton tc (on) Min Unit mA V V ms Note 1: Switching time test circuit & timing chart 4 2001-11-13 MIG150Q6CMB1X 2. Control stage (Tj = 25°C) Characteristics Control circuit current Symbol High side ID (H) Low side ID (L) Input on signal voltage VIN (on) Input off signal voltage VIN (off) Protection IFO (on) Normal IFO (off) Fault output current Test Condition VD = 15 V VD = 15 V Min Typ. Max ¾ 13 17 ¾ 39 51 1.4 1.6 1.8 2.2 2.5 2.8 ¾ 10 12 ¾ ¾ 0.1 Unit mA V VD = 15 V mA Overcurrent protection trip Inverter level OC VD = 15 V, Tj < = 125°C 240 ¾ ¾ A Short-circuit protection trip level SC VD = 15 V, Tj < = 125°C 240 ¾ ¾ A ¾ 5 ¾ ms 110 118 125 ¾ 98 ¾ 11.0 12.0 12.5 12.0 12.5 13.0 1 2 3 ms Min Typ. Max Unit IGBT ¾ ¾ 0.089 FRD ¾ ¾ 0.19 Compound is applied ¾ 0.013 ¾ Inverter Overcurrent cut-off time toff (OC) Overtemperature protection Trip level Reset level OTr Control supply under voltage protection Trip level UV Reset level UVr VD = 15 V OT Case temperature Fault output pulse width tFO ¾ VD = 15 V °C V 3. Thermal resistance (Tc = 25°C) Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition 5 °C/W °C/W 2001-11-13 MIG150Q6CMB1X Switching Time Test Circuit Intelligent power module TLP559 P VD 0.1 mF 15 kW OUT IN VS 47 mF 15 V GND GND U (V, W) VCC VD IF = 16 mA 0.1 mF 15 kW OUT IN PG VS 47 mF 15 V GND N GND Timing Chart Input pulse 15 V VIN Waveform 2.5 V 1.6 V 0 90% Irr Irr IC Waveform 90% VCE Waveform 10% toff 10% 10% tc (off) ton 6 20% Irr trr 10% tc (on) 2001-11-13 MIG150Q6CMB1X 4. Recommended conditions for application Characteristics Supply voltage Symbol VCC Test Condition P-N power terminal Control supply voltage VD VD-GND signal terminal Carrier frequency fc PWM control Dead time Switching time test circuit tdead (Note 2) Min Typ. Max Unit ¾ 600 800 V 13.5 15 16.5 V ¾ ¾ 20 kHz 5 ¾ ¾ ms Note 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. When specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. Dead Time Timing Chart 15 V VIN Waveform 0 15 V VIN Waveform 0 tdead tdead 7 2001-11-13 MIG150Q6CMB1X IC – VCE IC – VCE 300 300 Common emitter Common emitter VD = 17 V IC VD = 13 V 200 Collector current IC Collector current (A) Tj = 125°C (A) Tj = 25°C VD = 15 V 100 0 0 1 2 3 Collector-emitter voltage VD = 13 V 100 VD = 15 V 0 0 4 VCE VD = 17 V 200 (V) 1 2 3 Collector-emitter voltage Switching time – IC 4 VCE (V) Switching time – IC 10 10 ton (ms) toff 1 tc (off) 0.1 toff 1 tc (on) tc (on) Switching time Switching time (ms) ton Tj = 25°C tc (off) 0.1 VCC = 600 V VD = 15 V VCC = 600 V VD = 15 V L-Load 0.01 0 Tj = 125°C L-Load 50 100 Collector current 150 IC 0.01 0 200 (A) 50 100 Collector current IF – VF (A) 100 (A) Peak reverse recovery current Irr (A) Reverse recovery time trr (´ 10 ns) Common cathode Forward current IF IC 200 trr, Irr – IF 300 200 Tj = 125°C Tj = 25°C 100 0 0 150 1 2 Forward voltage 3 VF Irr Common cathode Tj = 25°C Tj = 125°C 1 0 4 trr 10 50 100 Forward current (V) 8 150 IF 200 (A) 2001-11-13 MIG150Q6CMB1X OC – Tc ID (H) – fc High side control circuit current ID (H) Overcurrent protection trip level OC (A) (mA) 500 400 300 200 100 VD = 15 V 0 0 25 50 75 100 Case temperature Tc 125 150 40 30 20 10 VD = 15 V Tj = 25°C 0 0 5 (°C) 10 Carrier frequency fc ID (L) – fc (mA) 15 20 25 (kHz) Reverse bias SOA 100 280 OC 200 IC (A) 80 60 Collector current Low side control circuit current ID (L) 240 40 20 VD = 15 V 160 120 80 Vj < = 125°C 40 VD = 15 V Tj = 25°C 0 0 5 10 15 Carrier frequency fc 20 0 0 25 100 200 300 400 Collector-emitter voltage (kHz) 500 VCE 600 700 (V) Transient thermal resistance Rth (t) (°C/W) Rth (t) – tw inverter stage 1 Tc = 25°C Diode stage 0.1 Transistor stage 0.01 0.001 0.001 0.01 0.1 Pulse width 1 tw 10 (s) 9 2001-11-13 MIG150Q6CMB1X Turn on loss – IC Turn off loss – IC 100 100 (mJ) Tj = 125°C Tj = 25°C 10 Tj = 25°C Eoff 1 0.1 Turn off loss Turn on loss Eon (mJ) Tj = 125°C 10 VCC = 600 V VD = 15 V 1 0.1 VCC = 600 V VD = 15 V L-Load 0.01 0 50 100 Collector current 150 IC L-Load 0.01 0 200 (A) 50 100 Collector current 10 150 IC 200 (A) 2001-11-13 MIG150Q6CMB1X RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 11 2001-11-13