TOSHIBA TC58512FT

TC58512FT
TENTATIVE
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
512-MBIT (64M ´ 8 BITS) CMOS NAND E PROM
DESCRIPTION
The TC58512 is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable
Read-Only Memory (NAND E2PROM) organized as 528 bytes ´ 32 pages ´ 4096 blocks. The device has a 528-byte
static register which allows program and read data to be transferred between the register and the memory cell array
in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes
´ 32 pages).
The TC58512 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as
well as for command inputs. The Erase and Program operations are automatically executed making the device most
suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and
other systems which require high-density non-volatile memory data storage.
FEATURES
·
·
·
Organization
Memory cell allay 528 ´ 128K ´ 8
Register
528 ´ 8
Page size
528 bytes
Block size
(16K + 512) bytes
Modes
Read, Reset, Auto Page Program
Auto Block Erase, Status Read
Multi Block Program, Multi Block Erase
Mode control
Serial input/output
Command control
·
·
·
·
·
PIN ASSIGNMENT (TOP VIEW)
NC
NC
NC
NC
NC
GND
RY / BY
RE
CE
NC
NC
VCC
VSS
NC
NC
CLE
ALE
WE
WP
NC
NC
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Power supply
VCC = 2.7 V to 3.6 V
Program/Erase Cycles 1E5 cycle (with ECC)
Access time
Cell array to register 25 ms max
Serial Read Cycle
50 ns min
Operating current
Read (50 ns cycle)
10 mA typ.
Program (avg.)
10 mA typ.
Erase (avg.)
10 mA typ.
Standby
100 mA
Package
TSOPI48-P-1220-0.50 (Weight: 0.53 g typ.)
PIN NAMES
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
NC
NC
NC
NC
I/O8
I/O7
I/O6
I/O5
NC
NC
NC
VCC
VSS
NC
NC
NC
I/O4
I/O3
I/O2
I/O1
NC
NC
NC
NC
I/O1 to I/O8
I/O port
CE
Chip enable
WE
Write enable
RE
Read enable
CLE
Command latch enable
ALE
Address latch enable
WP
Write protect
RY/BY
Ready/Busy
GND
Ground input
VCC
Power supply
VSS
Ground
000707EBA1
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid
situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to
property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most
recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide
for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
· The information contained herein is subject to change without notice.
2001-03-05 1/43
TC58512FT
BLOCK DIAGRAM
VCC VSS
Status register
Address register
I/O1
to
Column buffer
Column decoder
I/O Control circuit
I/O8
Command register
Data register
Row address buffer
decoder
CE
CLE
ALE
Logic control
Control
WE
RE
WP
Row address decoder
Sense amp
Memory cell array
RY/BY
HV generator
RY/BY
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
VALUE
UNIT
VCC
Power Supply Voltage
-0.6 to 4.6
V
VIN
Input Voltage
-0.6 to 4.6
V
VI/O
Input/Output Voltage
-0.6 V to VCC + 0.3 V (£ 4.6 V)
V
PD
Power Dissipation
0.3
W
Tsolder
Soldering Temperature (10s)
260
°C
Tstg
Storage Temperature
-55 to 150
°C
Topr
Operating Temperature
0 to 70
°C
CAPACITANCE *(Ta = 25°C, f = 1 MHz)
SYMB0L
PARAMETER
CONDITION
MIN
MAX
UNIT
CIN
Input
VIN = 0 V
¾
10
pF
COUT
Output
VOUT = 0 V
¾
10
pF
*
This parameter is periodically sampled and is not tested for every device.
2001-03-05 2/43
TC58512FT
VALID BLOCKS (1)
SYMBOL
NVB
PARAMETER
Number of Valid Blocks
MIN
TYP.
MAX
UNIT
4016
¾
4096
Blocks
(1) The TC58512 occasionally contains unusable blocks. Refer to Application Note (14) toward the end of this document.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
VCC
Power Supply Voltage
2.7
3.3
3.6
V
VIH
High Level input Voltage
2.0
¾
VCC + 0.3
V
VIL
Low Level Input Voltage
-0.3*
¾
0.8
V
-2 V (pulse width lower than 20 ns)
*
DC CHARACTERISTICS (Ta = 0° to 70°C, VCC = 2.7 V to 3.6 V)
SYMBOL
PARAMETER
CONDITION
MIN
TYP.
MAX
UNIT
IIL
Input Leakage Current
VIN = 0 V to VCC
¾
¾
±10
mA
ILO
Output Leakage Current
VOUT = 0.4 V to VCC
¾
¾
±10
mA
ICCO1
Operating Current (Serial Read)
CE = VIL, IOUT = 0 mA, tcycle = 50 ns
¾
10
30
mA
ICCO3
Operating Current
(Command Input)
tcycle = 50 ns
¾
10
30
mA
ICCO4
Operating Current (Data Input)
tcycle = 50 ns
¾
10
30
mA
ICCO5
Operating Current
(Address Input)
tcycle = 50 ns
¾
10
30
mA
ICCO7
Programming Current
¾
¾
10
30
mA
ICCO8
Erasing Current
¾
¾
10
30
mA
ICCS1
Standby Current
CE = VIH
¾
¾
1
mA
ICCS2
Standby Current
CE = VCC - 0.2 V
¾
¾
100
mA
VOH
High Level Output Voltage
IOH = -400 mA
2.4
¾
¾
V
VOL
Low Level Output Voltage
IOL = 2.1 mA
¾
¾
0.4
V
IOL ( RY/BY )
Output Current of RY/BY pin
VOL = 0.4 V
¾
8
¾
mA
2001-03-05 3/43
TC58512FT
AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(Ta = 0° to 70°C, VCC = 2.7 V to 3.6 V)
SYMBOL
PARAMETER
MIN
MAX
UNIT
¾
ns
tCLS
CLE Setup Time
0
tCLH
CLE Hold Time
10
¾
ns
tCS
CE Setup Time
0
¾
ns
tCH
CE Hold Time
10
¾
ns
tWP
Write Pulse Width
25
¾
ns
tALS
ALE Setup Time
0
¾
ns
tALH
ALE Hold Time
10
¾
ns
tDS
Data Setup Time
20
¾
ns
tDH
Data Hold Time
10
¾
ns
tWC
Write Cycle Time
50
¾
ns
tWH
WE High Hold Time
15
¾
ns
tWW
WP High to WE Low
100
¾
ns
tRR
Ready to RE Falling Edge
20
¾
ns
tRP
Read Pulse Width
35
¾
ns
tRC
Read Cycle Time
50
¾
ns
tREA
RE Access Time (Serial Data Access)
tCEH
CE High Time for Last Address in Serial Read Cycle
¾
35
ns
100
¾
ns
RE Access Time (ID Read)
¾
35
ns
tOH
Data Output Hold Time
10
¾
ns
tRHZ
RE High to Output High Impedance
¾
30
ns
tREAID
tCHZ
CE High to Output High Impedance
¾
20
ns
tREH
RE High Hold Time
15
¾
ns
Output-High-impedance-to- RE Rising Edge
0
¾
ns
RE Access Time (Status Read)
¾
35
ns
tCSTO
CE Access Time (Status Read)
¾
45
ns
tRHW
RE High to WE Low
0
¾
ns
tWHC
WE High to CE Low
30
¾
ns
tIR
tRSTO
tWHR
WE High to RE Low
30
¾
ns
tAR1
ALE Low to RE Low (ID Read)
100
¾
ns
CE Low to RE Low (ID Read)
100
¾
ns
¾
25
ms
tCR
tR
Memory Cell Array to Starting Address
tWB
WE High to Busy
¾
200
ns
tAR2
ALE Low to RE Low (Read Cycle)
50
¾
ns
tRB
RE Last Clock Rising Edge to Busy (in Sequential Read)
¾
200
ns
tCRY
CE High to Ready (When interrupted by CE in Read Mode)
¾
tRST
Device Reset Time (Read/Program/Erase)
¾
1+
ms
tr ( RY/BY )
NOTES
(2)
(1) (2)
ms
6/10/500
AC TEST CONDITIONS
PARAMETER
Input level
Input pulse rise and fall time
Input comparison level
Output data comparison level
Output load
CONDITION
2.4 V, 0.4 V
3 ns
1.5 V, 1.5 V
1.5 V, 1.5 V
CL (100 pF) + 1 TTL
2001-03-05 4/43
TC58512FT
Note: (1) CE High to Ready time depends on the pull-up resistor tied to the RY/ BY pin.
(Refer to Application Note (9) toward the end of this document.)
(2) Sequential Read is terminated when tCEH is greater than or equal to 100 ns. If the RE to CE delay
is less than 30 ns, RY/ BY signal stays Ready.
tCEH ³ 100 ns
*
*: VIH or VIL
CE
RE
525
526
527
A : 0 to 30 ns ® Busy signal is not output.
A
RY/BY
Busy
tCRY
PROGRAMMING AND ERASING CHARACTERISTICS (Ta = 0° to 70°C, VCC = 2.7 V to 3.6 V)
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
tPROG
Programming Time
¾
200
1000
ms
tDBSY
Dummy Busy Time for Multi Block
Programming
¾
2
10
ms
tMBPBSY
Multi Block Program Busy Time
¾
200
1000
ms
N
Number of Programming Cycles on Same
Page
¾
¾
3
tBERASE
Block Erasing Time
¾
2
10
NOTES
(1)
ms
(1): Refer to Application Note (12) toward the end of this document.
2001-03-05 5/43
TC58512FT
TIMING DIAGRAMS
Latch Timing Diagram for Command/Address/Data
CLE
ALE
CE
RE
Setup Time
Hold Time
WE
tDS
tDH
I/O1
to I/O8
: VIH or VIL
Command Input Cycle Timing Diagram
CLE
tCLS
tCS
tCLH
tCH
CE
tWP
WE
tALS
tALH
ALE
tDS
tDH
I/O1
to I/O8
: VIH or VIL
2001-03-05 6/43
TC58512FT
Address Input Cycle Timing Diagram
tCLS
CLE
tCS
tWC
tWC
tWC
CE
tWP
tWH
tWP
tWH
tWP
tWH
tWP
WE
tALS
tALH
ALE
tDS
I/O1
to I/O8
tDH
tDS
A0 to A7
tDH
tDS
A9 to A16
tDH
tDS
A17 to A24
tDH
A25
: VIH or VIL
Data Input Cycle Timing Diagram
tCLH
CLE
tCH
CE
tALS
tWC
ALE
tWP
tWH
tWP
tWP
WE
tDS
I/O1
to I/O8
tDH
DIN0
tDS
tDH
DIN1
tDS
tDH
DIN527
: VIH or VIL
2001-03-05 7/43
TC58512FT
Serial Read Cycle Timing Diagram
tRC
CE
tRP
tREH
RE
tOH
tRHZ
tREA
tRP
tREA
tRP
tOH
tRHZ
tCHZ
tOH
tRHZ
tREA
I/O1
to I/O8
tRR
RY/BY
Status Read Cycle Timing Diagram
tCLS
CLE
tCLS
tCLH
tCS
CE
tWP
tCH
WE
tWHC
tCSTO
tCHZ
tWHR
RE
tOH
tDS
I/O1
to I/O8
tDH
70H*
tIR
tRSTO
tRHZ
Status
output
RY/BY
* 70H represents the hexadecimal number
: VIH or VIL
2001-03-05 8/43
TC58512FT
Read Cycle (1) Timing Diagram
CLE
tCLS
tCLH
tCS
tCEH
tCH
CE
tWC
tCRY
WE
tALS
tALH
tAR2
tALH
ALE
tR
tRR
tRC
tWB
RE
tDS tDH
tDS tDH
tDS tDH
tDS tDH
tDS tDH
00H
A0 to
A7
A9
to A16
A17
to A24
A25
I/O1
to I/O8
tREA
DOUT
N
DOUT
N+1
DOUT
N+2
DOUT
527
tRB
Column address
N*
RY/BY
: VIH or VIL
Read Cycle (1) Timing Diagram: When Interrupted by CE
CLE
tCLS
tCLH
tCS
tCH
CE
tWC
tCHZ
WE
tALS
tALH
tAR2
tALH
ALE
tR
tRC
tWB
RE
I/O1
to I/O8
tRR
tDS tDH
tDS tDH
tDS tDH
tDS tDH
tDS tDH
00H
A0 to
A7
A9
to A16
A17
to A24
A25
tRHZ
tOH
tREA
DOUT
N
DOUT
N+1
DOUT
N+2
Column address
N*
RY/BY
*: Read operation using 00H command N: 0 to 255
: VIH or VIL
2001-03-05 9/43
TC58512FT
Read Cycle (2) Timing Diagram
CLE
tCLS
tCS
tCLH
tCH
CE
WE
tALH
tALS
tALH
tAR2
ALE
tR
tRR
tRC
tWB
RE
tDS tDH
tDS tDH
01H
A0 to A7
I/O1
to I/O8
tREA
A9 to
A16
A17
to A24
A25
DOUT
DOUT
256 + N 256 + N + 1
Column address
N*
DOUT
527
RY/BY
: VIH or VIL
*: Read operation using 01H command N: 0 to 255
Read Cycle (3) Timing Diagram
CLE
tCLS
tCS
tCLH
tCH
CE
WE
tALH
tALS
tALH
tAR2
ALE
tR
tRC
tWB
RE
I/O1
to I/O8
tRR
tDS tDH
tDS tDH
50H
A0 to A7
tREA
A9 to
A16
Column address
N*
A17
to A24
A25
DOUT
DOUT
512 + N 512 + N + 1
DOUT
527
RY/BY
*: Read operation using 50H command N: 0 to 15
: VIH or VIL
2001-03-05 10/43
TC58512FT
Sequential Read (1) Timing Diagram
CLE
CE
WE
ALE
RE
I/O1
to I/O8
00H
A0
A9 A17
to
to
to A25
A7 A16 A24
Column
Page
address
address
N
M
N
N+1 N+2
527
tR
0
1
2
527
2
527
tR
RY/BY
Page M + 1
access
Page M
access
: VIH or VIL
Sequential Read (2) Timing Diagram
CLE
CE
WE
ALE
RE
I/O1
to I/O8
01H
A0
A9 A17
to
to
to A25
A7 A16 A24
Page
Column
address
address
M
N
527
tR
256 + 256 + 256 +
N
N+1 N+2
0
1
tR
RY/BY
Page M
access
Page M + 1
access
: VIH or VIL
2001-03-05 11/43
TC58512FT
Sequential Read (3) Timing Diagram
CLE
CE
WE
ALE
RE
I/O1
to I/O8
50H
A9 A17
A0
to
to A25
to A7 A16
A24
Column
Page
address
address
N
M
527
tR
512 + 512 + 512 +
N
N+1 N+2
512
513
514
527
tR
RY/BY
Page M
access
Page M + 1
access
: VIH or VIL
2001-03-05 12/43
TC58512FT
Auto-Program Operation Timing Diagram
tCLS
CLE
tCLS
tCLH
tCS
CE
tCS
tCH
WE
tALH
tALS
tALH
tALS
tPROG
tWB
ALE
RE
tDS
tDS tDH
tDS tDH
80H
A0 to
A7
I/O1
to I/O8
tDH
A9
A17
A25
to A16 to A24
DIN0
tDS tDH
DIN1
DIN
527
10H
70H
Status
output
RY/BY
: VIH or VIL
: Do not input data while data is being output.
Auto Block Erase Timing Diagram
CLE
tCLS
tCLH
tCLS
tCS
CE
WE
tALS
tALH
tWB
tBERASE
ALE
RE
tDS tDH
I/O1
to I/O8
60H
A9
A17
A25
to A16 to A24
D0H
70H
Status
output
RY/BY
Auto Block
Erase Setup
command
Erase Start
command
: VIH or VIL
Busy
Status Read
command
: Do not input data while data is being output.
2001-03-05 13/43
TC58512FT
Multi Block Programming Timing (to be continued)
tCLS
CLE
tCLS
tCLH
tCS
CE
tCS
WE
tCH
tALH
tALS
tALH
tDBSY
tALS
ALE
tWB
RE
tDS
I/O1
to /O8
tDS tDH
tDS tDH
80H
A0 to
A7
tDH
A17
A9
A25
to A16 to A24
DIN0
DIN1
11H
80H
A0 to
A7
DIN527
RY / BY
Auto program (dummy)
: VIH or VIL
Max 3 times repeat
1
Last district input
2
31 times repeat
(Page 0 to 30 programming in multi block)
Max 4 blocks programming
2001-03-05 14/43
TC58512FT
(continuation 1) Multi Block Programming Timing
tCLS
CLE
tCLS tCLH
tCS
CE
tCH
WE
tALH
tALS
tALH
tMBPBSY
tALS
ALE
tWB
RE
tDS
I/O1
to I/O8
tDS tDH
tDS tDH
80H
A0 to
A7
tDH
A17
A9
A25
to A16 to A24
DIN0
DIN1
15H
80H
A0 to
A7
DIN527
RY / BY
Auto program (multi block program)
: VIH or VIL
Max 3
times
repeat
: Do not input data while data is being output.
Last district input
2
3
31 times repeat
Max 3 times repeat
(Page 0 to 30 programming in multi block)
Max 4 blocks programming
2001-03-05 15/43
TC58512FT
(continuation 2) Multi Block Programming Timing
tCLS
CLE
tCLS
tCLH
tCS
CE
tCS
WE
tCH
tALH
tALS
tALH
tDBSY
tALS
ALE
tWB
RE
tDS
I/O1
to I/O8
tDS tDH
tDS tDH
80H
A0 to
A7
tDH
A17
A9
A25
to A16 to A24
DIN0
DIN1
11H
80H
A0 to
A7
DIN527
RY / BY
Auto program (dummy)
: VIH or VIL
: Do not input data while data is being output.
3
4
Max 3 times repeat
Last district input
(Last pages programming in multi block)
Max 4 blocks programming
2001-03-05 16/43
TC58512FT
(continuation 3) Multi Block Programming Timing
tCLS
CLE
tCLS tCLH
tCS
CE
tCH
WE
tALH
tALS
tALH
tProg
tALS
ALE
tWB
RE
I/O1
to I/O8
tDS
tDS tDH
tDS tDH
80H
A0 to
A7
tDH
A17
A9
A25
to A16 to A24
DIN0
tDS tDH
DIN1
10H
71H
Status
output
DIN527
RY / BY
: VIH or VIL
Auto program (true)
: Do not input data while data is being output.
Max 3 4
times
repeat
5
Last district input
(Last pages programming in multi block)
Max 4 blocks programming
Status read
2001-03-05 17/43
TC58512FT
Multi Block Erase Timing Diagram
CLE
tCLS
tCLH
tCLS
tCS
CE
WE
tALS
tALH
tWB
tBERASE
ALE
RE
tDS tDH
I/O1
to I/O8
A9 to
A16
60H
A17 to
A24
A25
D0H
71H
Status
output
RY/BY
Auto Block
Erase Setup
command
Erase Start
command
Busy
Status Read
command
Max 4 times repeat
: VIH or VIL
: Do not input data while data is being output.
2001-03-05 18/43
TC58512FT
ID Read (1) Operation Timing Diagram
CLE
tCLS
tCS
tCH
tCLS
tCS
CE
tCH
WE
tALH
tALS
tALH
tCR
tAR1
ALE
RE
tDS tDH
I/O1
to I/O8
tREAID
90H
tREAID
00
98H
76H
Address
input
Maker code
Device code
: VIH or VIL
ID Read (2) Operation Timing Diagram
CLE
tCLS
tCS
tCH
tCLS
tCS
CE
tCH
WE
tALH
tALS
tALH
tCR
tAR1
ALE
RE
tDS tDH
I/O1
to I/O8
91H
tREAID
00
Address
input
20H
: VIH or VIL
2001-03-05 19/43
TC58512FT
PIN FUNCTIONS
The device is a serial access memory which utilizes time-sharing input of address information. The device pin-outs
are configured as shown in Figure 1.
Command Latch Enable: CLE
The CLE input signal is used to control loading of the
operation mode command into the internal command
register. The command is latched into the command
register from the I/O port on the rising edge of the WE
signal while CLE is High.
Address Latch Enable: ALE
The ALE signal is used to control loading of either
address information or input data into the internal
address/data register.
Address information is latched on the rising edge of
WE if ALE is High.
Input data is latched if ALE is Low.
NC
NC
NC
NC
NC
GND
RY/BY
RE
CE
NC
NC
VCC
VSS
NC
NC
CLE
ALE
WE
WP
NC
NC
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Chip Enable: CE
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
NC
NC
NC
NC
I/O8
I/O7
I/O6
I/O5
NC
NC
NC
VCC
VSS
NC
NC
NC
I/O4
I/O3
I/O2
I/O1
NC
NC
NC
NC
Figure 1. Pinout
The device goes into a low-power Standby mode when CE goes High during a Read operation. The CE
signal is ignored when device is in Busy state ( RY/ BY = L), such as during a Program or Erase operation, and
will not enter Standby mode even if the CE input goes High. The CE signal must stay Low during the Read
mode Busy state to ensure that memory array data is correctly transferred to the data register.
Write Enable: WE
The WE signal is used to control the acquisition of data from the I/O port.
Read Enable: RE
The RE signal controls serial data output. Data is available tREA after the falling edge of RE .
The internal column address counter is also incremented (Address = Address + l) on this falling edge.
I/O Port: I/O1 to 8
The I/O1 to 8 pins are used as a port for transferring address, command and input/output data to and from the
device.
Write Protect: WP
The WP signal is used to protect the device from accidental programming or erasing. The internal voltage
regulator is reset when WP is Low. This signal is usually used for protecting the data during the power-on/off
sequence when input signals are invalid.
Ready/Busy: RY/BY
The RY/ BY output signal is used to indicate the operating condition of the device. The RY/ BY signal is in
Busy state ( RY/ BY = L) during the Program, Erase and Read operations and will return to Ready state
( RY/ BY = H) after completion of the operation. The output buffer for this signal is an open drain.
2001-03-05 20/43
TC58512FT
Schematic Cell Layout and Address Assignment
The Program operation works on page units while the Erase operation works on block units.
I/O1
512
A page consists of 528 bytes in which 512 bytes are used for
main memory storage and 16 bytes are for redundancy or for
other uses.
1 page = 528 bytes
1 block = 528 bytes ´ 32 pages = (16K + 512) bytes
Capacity = 528 bytes ´ 32 pages ´ 4096 blocks
I/O8
16
32 pages
=
131072 pages
=
1 block
An address is read in via the I/O port over four consecutive
clock cycles, as shown in Table 1.
4096 blocks
8I/O
528
Figure 2. Schematic Cell Layout
Table 1. Addressing
I/O8
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
First cycle
A7
A6
A5
A4
A3
A2
A1
A0
Second cycle
A16
A15
A14
A13
A12
A11
A10
A9
Third cycle
A24
A23
A22
A21
A20
A19
A18
A17
*L
*L
*L
*L
*L
*L
*L
A25
Fourth cycle
A0 to A7 : Column address
A9 to A25 : Page address
A14 to A25 : Block address
A9 to A13 : NAND address in block
* : A8 is automatically set to Low or High by a 00H command or a 01H command.
* : l/O2 to l/O8 must be set to Low in the fourth cycle.
Operation Mode: Logic and Command Tables
The operation modes such as Program, Erase, Read and Reset are controlled by the fourteen different
command operations shown in Table 3. Address input, command input and data input/output are controlled by
the CLE, ALE, CE , WE , RE and WP signals, as shown in Table 2.
Table 2. Logic Table
CLE
ALE
CE
Command Input
H
L
Data Input
L
Address Input
WE
RE
WP
L
H
*
L
L
H
*
L
H
L
H
*
Serial Data Output
L
L
L
H
During Programming (Busy)
*
*
*
*
*
H
During Erasing (Busy)
*
*
*
*
*
H
Program, Erase Inhibit
*
*
*
*
*
L
*
H: VIH, L: VIL, *: VIH or VIL
2001-03-05 21/43
TC58512FT
Table 3. Command table (HEX)
First Cycle
Second Cycle
Acceptable while Busy
Serial Data Input
80
¾
Read Mode (1)
00
¾
Read Mode (2)
01
¾
Read Mode (3)
50
¾
Reset
FF
¾
Auto Program (True)
10
¾
Auto Program (Dummy)
11
¾
Auto Program
(Multi Block Program)
15
¾
Auto Block Erase
60
D0
Status Read (1)
70
¾
Q
Status Read (2)
71
¾
Q
ID Read (1)
90
¾
ID Read (2)
91
¾
HEX data bit assignment
(Example)
Serial Data Input: 80H
Q
1
0
0
0
0
0
0
0
I/O8 7
6
5
4
3
2 I/O1
Once the device has been set to Read mode by a 00H, 01H or 50H command, additional Read commands are
not needed for sequential page Read operations.
Table 4 shows the operation states for Read mode.
Table 4. Read mode operation states
CLE
ALE
CE
WE
RE
I/O1 to I/O8
Power
Output Select
L
L
L
H
L
Output
Active
Output Deselect
L
L
L
H
H
High impedance
Active
Standby
L
L
H
H
*
High impedance
Standby
H: VIH, L: VIL, *: VIH or VIL
2001-03-05 22/43
TC58512FT
DEVICE OPERATION
Read Mode (1)
Read mode (1) is set when a “00H” command is issued to the Command register. Refer to Figure 3 below for
timing details and the block diagram.
CLE
CE
WE
ALE
RE
RY/BY
M
I/O
Busy
N
00H
Start-address
input
M
527
Select page
N
Cell array
Figure 3. Read mode (1) operation
A data transfer operation from the cell array to the register
starts on the rising edge of WE in the fourth cycle (after the
address information has been latched). The device will be in
Busy state during this transfer period. The CE signal must stay
Low after the fourth address input and during Busy state.
After the transfer period the device returns to Ready state.
Serial data can be output synchronously with the RE clock
from the start pointer designated in the address input cycle.
Read Mode (2)
CLE
CE
WE
ALE
RE
RY/BY
M
I/O
Busy
N
01H
Start-address
input
256 M
527
Select page
N
Cell array
The operation of the device after input of the 01H command is
the same as that of Read mode (1). If the start pointer is to be set
after column address 256, use Read mode (2).
However, for a Sequential Read, output of the next page starts
from column address 0.
Figure 4. Read mode (2) operation
2001-03-05 23/43
TC58512FT
Read Mode (3)
Read mode (3) has the same timing as Read modes (1) and (2) but is used to access information in the extra
16-byte redundancy area of the page. The start pointer is therefore set to a value between byte 512 and byte 527.
CLE
CE
WE
ALE
RE
RY/BY
Busy
I/O
50H
512
A0 to
A3
Addresses bits A0 to A3 are used to set the start pointer for the
redundant memory cells, while A4 to A7 are ignored.
Once a “50H” command has been issued, the pointer moves to
the redundant cell locations and only those 16 cells can be
addressed, regardless of the value of the A4-to-A7 address.
(A “00H” command is necessary to move the pointer back to
the 0-to-511 main memory cell location.)
527
Figure 5. Read mode (3) operation
Sequential Read (1) (2) (3)
This mode allows the sequential reading of pages without additional address input.
00H
01H
Address input
50H
Data output
Data output
tR
tR
tR
Busy
Busy
Busy
RY/BY
(00H)
0
527
(01H)
256
527
(50H)
512 527
A
A
Sequential Read (1)
A
Sequential Read (2)
Sequential Read (3)
Sequential Read modes (1) and (2) output the contents of addresses 0 to 527 as shown above, while Sequential
Read mode (3) outputs the contents of the redundant address locations only.
When the pointer reaches the last address, the device continues to output the data from this address** on each
RE clock signal.
** Column address 527 on the last page
2001-03-05 24/43
TC58512FT
Status Read
The TC58512 has two Status Read commands. One is Status Read (1) command “70H” and the other is Status
Read (2) command “71H”.
The device automatically implements the execution and verification of the Program and Erase operations. The
Status Read function is used to monitor the Ready/Busy status of the device, determine the result (pass/fail) of a
Program or Erase operation, and determine whether the device is in Protect mode. The device status is output
via the I/O port on the RE clock after a Status Read command “70H” or “71H” input.
The resulting information of Status Read (1) command “70H” is outlined in Table 5 below and the resulting
information of Status Read (2) command “71H” is outlined in the explanation for Multi Block Program and Multi
Block Erase toward the end of this document.
Table 5. Status output table for Status Read (1) command “70H”
STATUS
OUTPUT
I/O1
Pass/Fail
Pass: 0
Fail: 1
I/O2
Not Used
0
I/O3
Not Used
0
I/O4
Not Used
0
I/O5
Not Used
0
I/O6
Not Used
0
I/O7
Ready/Busy
Ready: 1
Busy: 0
I/O8
Write Protect
Protect: 0
Not Protected: 1
The Pass/Fail status on I/O1 is only
valid when the device is in the Ready
state.
An application example with multiple devices is shown in Figure 6.
CLE
ALE
WE
RE
CE1
CE2
CE3
CEN
CEN + 1
Device
1
Device
2
Device
3
Device
N
Device
N+1
I/O1
to I/O8
RY/BY
RY/BY
Busy
CLE
ALE
WE
CE1
CEN
RE
I/O
70H
70H
Status on Device 1
Status on Device N
Figure 6. Status Read timing application example
System Design Note: If the RY/ BY pin signals from multiple devices are wired together as shown in the
diagram, the Status Read function can be used to determine the status of each individual device.
2001-03-05 25/43
TC58512FT
Auto Page Program
The device carries out an Automatic Page Program operation when it receives a “10H” Program command after
the address and data have been input. The sequence of command, address and data input is shown below.
(Refer to the detailed timing chart.)
80
10
70
Data input Address Data input Program
command input
0 to 527 command
Status Read
command
I/O
Pass
Fail
RY/BY automatically returns to Ready after
completion of the operation.
RY/BY
Data input
Program
Reading & verification
Selected
page
Figure 7. Auto Page Program operation
The data is transferred (programmed) from the register to the selected
page on the rising edge of WE following input of the “10H” command.
After programming, the programmed data is transferred back to the
register to be automatically verified by the device. If the programming
does not succeed, the Program/Verify operation is repeated by the device
until success is achieved or until the maximum loop number set in the
device is reached.
Auto Block Erase
The Auto Block Erase operation starts on the rising edge of WE after the Erase Start command “D0H”
which follows the Erase Setup command “80H”. This two-cycle process for Erase operations acts as an ertra layer
of protection from aceidental erasure of data due to external noise. The device automatically executes the Erase
and Verify operations.
60
D0
70
Block Address Erase Start
input: 3 cycles command
RY/BY
Status Read
command
I/O
Pass
Fail
Busy
2001-03-05 26/43
TC58512FT
Multi Block Program
The device carries out an Multi Block Program operation when it receives a “15H” or “10H” Program command
after some sets of the address and data have been input.
In the interval of the Multi District adress and the (512 + 16 byte) data input, “11H” Dummy Program
command is used when it still continues the data input into another District.
The sequence of command, address and data input is shown below. (Refer to the detailed timing chart.)
Dummy
Program
command
Data input
command
80
11
Address
input
Dummy
Program
command
Data input
command
80
11
Dummy
Program
command
80
Address Data input
input
0 to 527
Data input
0 to 527
Data input
command
Data input
command
Multi block
Program
command
80
15
11
Address
input
Data input
0 to 527
Address Data input
input
0 to 527
RY/BY
80
11
80
11
80
11
80
15
Data input
(District 0)
(District 1)
(District 2)
(District 3)
After “15H” Multi Block Program command, physical programing starts as follows.
Program
Reading & verification
Selected
page
The data is transferred (programmed) from the register to the selected page on the rising edge of -WE
following input of the “15H” command. After programming, the programmed data is transferred back to the
register to be automatically verified by the device. If the programming does not succeed, the
Program/Verify operation is repeated by the device until success is achieved or until the maximum loop
number set in the device is reached.
2001-03-05 27/43
TC58512FT
Starting the above operation from 1st page of the selected erase blocks, and then repeating the operation total
31 times with incrementing the page address in the blocks, and then input the last page data of the blocks, “10H”
command executes final programming.
In this full sequence, the command sequence is following.
80
11
80
11
80
11
80
15
80
11
80
11
80
11
80
15
31st
80
11
80
11
80
11
80
15
32nd
80
11
80
11
80
11
80
10
1st
After the “10H” command, the total results of the above operation is shown through the Status Read command.
Pass
10
71
I/O
Status Read
command
Fail
RY/BY
The Status discription is following.
STATUS
OUTPUT
I/O1
Total Pass/Fail
Pass: 0
Fail: 1
I/O2
District 0 Pass/Fail
Pass: 0
Fail: 1
I/O3
District 1 Pass/Fail
Pass: 0
Fail: 1
I/O4
District 2 Pass/Fail
Pass: 0
Fail: 1
I/O5
District 3 Pass/Fail
Pass: 0
Fail: 1
I/O6
Not Used
I/O7
Ready/Busy
Ready: 1
Busy: 0
I/O8
Write Protect
Protect: 0
Not Protect: 1
I/O1 describes total Pass/Fail condition.
If at least one fail occurred in 32 times ´ 4
(512 + 16 byte) page write operation, it
shows “Fail” condition.
I/O2 describes total Pass/Fail condition.
If more than one fail occurred in 32 times ´
1 (512 + 16 byte) page write operation in
District 0 area, it shows “Fail” condition.
Do not care
I/O3, I/O4 and I/O5 are as same manner
as I/O2.
2001-03-05 28/43
TC58512FT
Internal addressing in relation with the Districts
To use Multi Block Program operation, the internal addressing should be conscious in relation with the
District.
· The device consists from 4 Districts.
· Each District consists from 1024 erase blocks.
· The allocation rule is follows.
District 0: Block 0, Block 4, Block 8, Block 12, ···.., Block 4092
District 1: Block 1, Block 5, Block 9, Block 13, ···.., Block 4093
District 2: Block 2, Block 6, Block10, Block 14, ···.., Block 4094
District 3: Block 3, Block 7, Block11, Block 15, ···.., Block 4095
Address input restriction for the Multi Block Program operation
In selecting the blocks for the Multi Block Program operation, following is the restriction and acceptance.
(Restriction)
Maximum one block should be selected from each District.
The data input operation should be started from the same number page of the each selected block and then, the
page number in the blocks should be same number at the same time programming.
(Acceptance)
There is no order limitation of the District for the address input.
Any number of the District can be select for the programming.
So, for example, following operation is in acceptance.
(80) [District 2] (11) (80) [District 0] (11) (80) [District 1] (15)
It requires no mutual address relation between the selected blocks from each District.
Operating restriction during the Multi Block Program operation
(Restriction)
Starting from 1st page data input, until issuing “10H” command, any other command out of defined sequence can
not be issued except Status Read command and Reset command.
(Acceptance)
The data input operation can be terminated with “10H” command instead of “15H” command in the middle of the
page number in the block.
In this case the Status represents the reflected value accumulated from 1st page programming of this sequence
and up to the last page programming terminated by “10H” command.
Status Read operation
Untill the Ready condition after the programming terminated by “10H” command, effective bit in the Status
data is limited on Ready/Busy bit.
In other words, Pass/Fail condition can be checked only in the Ready condition after “10H” command.
2001-03-05 29/43
TC58512FT
Multi Block Erase
The device carries out a Multi Block Erase operation when it receives a “D0H” command after some sets of the
address have been input.
After the “D0H” command, the total results of Erase operation is shown through the Status Read (2) command
“71H”.
Pass
D0
71
I/O
Status Read
command
Fail
RY/BY
The Status discription is following.
STATUS
OUTPUT
I/O1
Total Pass/Fail
Pass: 0
Fail: 1
I/O2
District 0 Pass/Fail
Pass: 0
Fail: 1
I/O3
District 1 Pass/Fail
Pass: 0
Fail: 1
I/O4
District 2 Pass/Fail
Pass: 0
Fail: 1
I/O5
District 3 Pass/Fail
Pass: 0
Fail: 1
I/O6
Not Used
I/O7
Ready/Busy
Ready: 1
Busy: 0
I/O8
Write Protect
Protect: 0
Not Protect: 1
I/O1 describes total Pass/Fail condition.
If at least one fail occurred in Max 4 Blocks
erase operation, it shows “Fail” condition.
I/O2 describes Pass/Fail condition.
If fail occurred in District 0 area, it shows
“Fail” condition.
I/O3, I/O4 and I/O5 are as same manner
as I/O2.
Do not care
Internal addressing in relation with the Districts
·
·
·
To use Multi Block Erase operation, the internal addressing should be conscious in relation with the Districts.
The device consists from 4 Districts.
Each District consists from 1024 erase blocks.
The allocation rule is follows.
District 0: Block 0, Block 4, Block 8, Block 12, ···.., Block 4092
District 1: Block 1, Block 5, Block 9, Block 13, ···.., Block 4093
District 2: Block 2, Block 6, Block10, Block 14, ···.., Block 4094
District 3: Block 3, Block 7, Block11, Block 15, ···.., Block 4095
Address input restriction for the Multi Block Erase operation
In selecting the blocks for the Multi Block Erase operation, following is the restriction and acceptance.
(Restriction)
Maximum one block should be selected from each District.
(Acceptance)
There is no order limitation of the District for the address input.
Any number of the Districts can be select for the erase operation.
So, for example, following operation is in acceptance.
(60) [District 2] (60) [District 0] (60) [District 1] (D0)
It requires no mutual address relation between the selected blocks from each District.
2001-03-05 30/43
TC58512FT
Reset
The Reset mode stops all operations. For example, in the case of a Program or Erase operation the internally
generated voltage is discharged to 0 volts and the device enters Wait state.
The response to an “FFH” Reset command input during the various device operations is as follows:
When a Reset (FFH) command is input during programming
Figure 8.
80
10
FF
00
Internal VPP
RY/BY
tRST (max 10 ms)
When a Reset (FFH) command is input during erasing
Figure 9.
D0
FF
00
Internal erase
voltage
RY/BY
tRST (max 500 ms)
When a Reset (FFH) command is input during Read operation
Figure 10.
00
FF
00
RY/BY
tRST (max 6 ms)
When a Status Read command (70H) is input after a Reset
Figure 11.
FF
70
I/O status: Pass/Fail ® Pass
Ready/Busy ® Ready
RY/BY
FF
70
I/O status: Ready/Busy ® Busy
RY/BY
When two or more Reset commands are input in succession
Figure 12.
(1)
(2)
(3)
FF
FF
FF
RY/BY
The second
FF
command is invalid, but the third
FF
command is valid.
2001-03-05 31/43
TC58512FT
ID Read (1)
The TC58512 contains ID codes which identify the device type and the manufacturer.
The TC58512 has 2 types of ID read command, i.e. ID Read (1) command 90H and ID Read (2) command 91H.
ID Read (1) command 90H provides maker code and device code. The ID codes can be read out under the
following timing conditions:
CLE
tCR
CE
WE
tAR1
ALE
RE
tREAID
I/O
90H
ID Read command (1)
00
98H
76H
Address
00
Maker code
Device code
For the specifications of the access times tREAID, tCR and tAR1 refer to the AC Characteristics.
Figure 13. ID Read timing
Table 6. ID Codes read out by ID read command (1) 90H
I/O8
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
Hex Data
Maker code
1
0
0
1
1
0
0
0
98H
Device code
0
1
1
1
0
1
1
0
76H
2001-03-05 32/43
TC58512FT
ID Read (2)
ID Read (2) command 91H provides ´4-block mode availability. If ID code read out by 91H is 20H, it indicates
the device has ´4-block mode.
CLE
tCR
CE
WE
tAR1
ALE
RE
tREAID
I/O
91H
00
20H
ID Read command (2)
Address
00
Extended ID code
For the specifications of the access times tREAID, tCR and tAR1 refer to the AC Characteristics.
Figure 14. ID Read timing
Table 7. ID Codes read out by command 91H
Extended ID code
I/O8
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
Hex Data
0
0
1
0
0
0
0
0
20H
2001-03-05 33/43
TC58512FT
APPLICATION NOTES AND COMMENTS
(1)
Power-on/off sequence:
The WP signal is useful for protecting against data corruption at power-on/off. The following timing
sequence is necessary.
The WP signal may be negated any time after the VCC reaches 2.5 V and CE signal is kept high in
power up sequence.
2.7 V
2.5 V
0V
VCC
Don’t
care
Don’t
care
CE , WE , RE
CLE, ALE
WP
VIH
VIL
VIL
Operation
Figure 15. Power-on/off Sequence
In order to operate this device stably, after VCC becomes 2.5 V, it recommends starting access after about
200 ms.
(2)
Status after power-on
The following sequence is necessary because some input signals may not be stable at power-on.
Power on
FF
Reset
Figure 16.
(3)
Prohibition of unspecified commands
The operation commands are listed in Table 3. Input of a command other than those specified in Table 3 is
prohibited. Stored data may be corrupted if an unknown command is entered during the command cycle.
(4)
Restriction of command while Busy state
During Busy state, do not input any command except 70H, 71H and FFH.
(5)
Acceptable commands after Serial Input command “80H”
Once the Serial Input command “80H” has been input, do not input any command other than the Program
Execution command “10H”, “11H” or “15H” or the Reset command “FFH”.
If a command other than “10H”, “11H”, “15H” or “FFH” is input, the Program operation is not performed.
80
XX
10
For this operation the “FFH” command is needed.
Command other than
Programming cannot be executed.
“10H”, “11H”, “15H” or “FFH”
2001-03-05 34/43
TC58512FT
(6)
Addressing for program operation
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of
the block to MSB (most significant bit) page of the block. Random page address programming is prohibited.
From the LSB page to MSB page
DATA IN: Data (1)
Ex.) Random page program (Prohibition)
Data (32)
DATA IN: Data (1)
Data register
Data (32)
Data register
Page 0
Page 1
Page 2
(1)
(2)
(3)
Page 0
Page 1
Page 2
(2)
(16)
(3)
Page 15
(16)
Page 15
(1)
Page 31
(32)
Page 31
(32)
Figure 17. page programming within a block
(7)
Status Read during a Read operation
00
command
00
70
[A]
CE
WE
RY/BY
RE
Status Read
command input
Address N
Status Read
Status output
Figure 18.
The device status can be read out by inputting the Status Read command “70H” in Read mode.
Once the device has been set to Status Read mode by a “70H” command, the device will not return to Read
mode.
Therefore, a Status Read during a Read operation is prohibited.
However, when the Read command “00H” is input during [A], Status mode is reset and the device returns
to Read mode. In this case, data output starts automatically from address N and address input is unnecessary
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TC58512FT
(8)
Pointer control for “00H”, “01H” and “50H”
The device has three Read modes which set the destination of the pointer. Table 7 shows the destination of
the pointer, and Figure 14 is a block diagram of their operations.
Table 8. Pointer Destination
0
Read Mode
Command
Pointer
(1)
00H
0 to 255
(2)
01H
256 to 511
(3)
50H
512 to 527
255 256
511 512 527
A
B
(1) 00H
(2) 01H
(3) 50H
C
Pointer control
Figure 19. Pointer control
The pointer is set to region A by the “00H” command, to region B by the “01H” command, and to region C by
the “50H” command.
(Example)
The “00H” command must be input to set the pointer back to region A when the pointer is pointing to region
C.
00H
50H
Add
Start point
A area
Add
Start point
A area
Add
Start point
C area
Add
Start point
C area
Add
Start point
B area
Add
Start point
A area
50H
Add
Start point
C area
Add
Start point
A area
00H
01H
To program region C only, set the start point to region C using the 50H command.
50H
01H
80H
10H
Add
DIN
Start point
C Area
Add
DIN
Start point
B Area
80H
Programming region C only
10H
Programming region B and C
Figure 20. Example of How to Set the Pointer
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TC58512FT
(9)
RY/ BY : termination for the Ready/Busy pin ( RY/ BY )
A pull-up resistor needs to be used for termination because the RY/ BY buffer consists of an open drain
circuit.
VCC
VCC
Ready
3.0 V
R
Device
VCC
3.0 V
1.0 V
RY/BY
CL
Busy
1.0 V
tr
tf
VSS
1.5 ms
Figure 21.
tr
This data may vary from device to device.
We recommend that you use this data as a reference
when selecting a resistor value.
tf
1.0 ms
15 ns
10 ns
tf
tr
0.5 ms
0
VCC = 3.3 V
Ta = 25°C
CL = 100 pF
5 ns
1 KW
2 KW
3 KW
4 KW
R
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TC58512FT
(10)
Note regarding the WP signal
The Erase and Program operations are automatically reset when WP goes Low. The operations are
enabled and disabled as follows:
Enable Programming
WE
DIN
80
10
WP
RY/BY
tWW (100 ns min)
Disable Programming
WE
DIN
80
10
WP
RY/BY
tWW (100 ns min)
Enable Erasing
WE
DIN
60
D0
WP
RY/BY
tWW (100 ns min)
Disable Erasing
WE
DIN
60
D0
WP
RY/BY
tWW (100 ns min)
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(11)
When five address cycles are input
Although the device may read in a fifth address, it is ignored inside the chip.
Read operation
CLE
CE
WE
ALE
I/O
00H, 01H or 50H
Address input
ignored
RY/BY
WE Internal read operation starts when WE goes High in the fourth cycle.
Figure 22.
Program operation
CLE
CE
WE
ALE
I/O
80H
Address input
Data input
ignored
Figure 23.
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TC58512FT
(12)
Several programming cycles on the same page (Partial Page Program)
A page can be divided into up to 3 segments. Each segment can be programmed individually as follows:
1st programming
Data Pattern 1
2nd programming
All 1s
All 1s
Data Pattern 2
All 1s
nth programming
Result
All 1s
Data Pattern 1
Data Pattern 3
Data Pattern 2
Data Pattern 3
Figure 24.
Note: The input data for unprogrammed or previously programmed page segments must be “1”
(i.e. the inputs for all page bytes outside the segment which is to be programmed should be set to all “1”).
(13)
Note regarding the RE signal
RE The internal column address counter is incremented synchronously with the RE clock in Read mode.
Therefore, once the device has been set to Read mode by a “00H”, “01H” or “50H” command, the internal
column address counter is incremented by the RE clock independently of the address input timing, If the
RE clock input pulses start before the address input, and the pointer reaches the last column address, an
internal read operation (array to register) will occur and the device will enter Busy state. (Refer to Figure 25.)
Address input
I/O
00H/01H/50H
WE
RE
RY/BY
Figure 25.
Hence the RE clock input must start after the address input.
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TC58512FT
(14)
Invalid blocks (bad blocks)
The device contains unusable blocks. Therefore, at the time of use, please check whether a block is bad and
do not use these bad blocks.
Bad Block
Bad Block
Figure 26.
At the time of shipment, all data bytes in a Valid Block are FFH. For Bad
Block, all bytes are not in the FFH state. Please don’t perform erase
operation to Bad Block.
Check if the device has any bad blocks after installation into the system.
Figure 27 shows the test flow for bad block detection. Bad blocks which are
detected by the test flow must be managed as unusable blocks by the
system.
A bad block does not affect the performance of good blocks because it is
isolated from the Bit line by the Select gate
The number of valid blocks at the time of shipment is as follows:
Valid (Good) Block Number
MIN
TYP.
MAX
UNIT
4016
¾
4096
Block
Bad Block Test Flow
Read Check: to verify all pages in the block
with FF (Hex)
Start
Block No = 1
Fail
Read Check
Pass
Block No. = Block No. + 1
Bad Block *1
No
Block No. = 4096
Yes
End
*1: No erase operation is allowed to detected bad blocks
Figure 27
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TC58512FT
(15)
Failure phenomena for Program and Erase operations
The device may fail during a Program or Erase operation.
The following possible failure modes should be considered when implementing a highly reliable system.
FAILURE MODE
DETECTION AND COUNTERMEASURE SEQUENCE
Block
Erase Failure
Status Read after Erase ® Block Replacement
Page
Programming
Failure
Status Read after Program ® Block Replacement
Programming
Failure
1®0
(1) Block Verify after Program ® Retry
Single Bit
·
ECC: Error Correction Code
·
Block Replacement
(2) ECC
Program
Error occurs
Buffer
memory
Block A
When an error happens in Block A, try to
reprogram the data into another Block (Block B)
by loading from an external buffer. Then,
prevent further system accesses to Block A (by
creating a bad block table or by using an
another appropriate scheme).
Block B
Figure 28.
Erase
When an error occurs in an Erase operation, prevent future accesses to this bad block
(again by creating a table within the system or by using another appropriate scheme).
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TC58512FT
Package Dimensions
Weight: 0.53 g (typ.)
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