MICROWAVE POWER GaAs FET TIM1213-5 PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=37.0dBm at 12.7GHz to 13.2GHz n HERMETICALLY SEALED PACKAGE n HIGH GAIN G1dB=7.0dB at 12.7GHz to 13.2GHz RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C ) CHARACTERISTICS SYMBOL CONDITION Output Power at 1dB P1dB Compression Point VDS= 9V Power Gain at 1dB G1dB f= 12.7 to 13.2GHz Compression Point Drain Current IDS1 ηadd Power Added Efficiency ∆Tch Channel Temperature Rise VDS X IDS X Rth(c-c) UNIT dBm MIN. 37.0 TYP. MAX. 37.5 dB 6.0 7.0 A % °C 2.0 25 2.5 80 UNIT TYP. mS MIN. 1400 MAX. V -2.0 -3.5 -5.0 A 5.0 5.7 V -5 °C/W 3.0 3.7 ELECTRICAL CHARACTERISTICS ( Ta= 25° C ) CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO Rth(c-c) CONDITION VDS = 3V IDS = 2.4A VDS = 3V IDS = 72mA VDS = 3V VGS= 0V IGS= -72µA Channel to Case u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Jun. 2002 TIM1213-5 ABSOLUTE MAXIMUM RATINGS ( Ta= 25° C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 5.7 Total Power Dissipation (Tc= 25 °C) PT W 30 Channel Temperature Tch °C 175 Storage Temperature Tstg °C -65 to +175 4-R2.4 2.0MIN. PACKAGE OUTLINE (2-9D1B) • ‚ Source ‚ . 1.8±0.3 0.2MAX 8.5 MAX. 3.2MAX +0.1 0.1 -0.05 13.0±0.3 17.0 MAX ƒ Drain 2.0MIN 0.5±0.15 1.2±0.3 ƒ 9.7±0.3 2.5±0.3 ‚ • Gate HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2