HS2A THRU HS2M 2.0 AMPS. High Efficient Surface Mount Rectifiers Voltage Range 50 to 1000 Volts Current 2.0 Amperes SMB/DO-214AA Features Glass passivated junction chip. For surface mounted application Low forward voltage drop Low profile package Built-in stain relief, ideal for automatic placement Fast switching for high efficiency High temperature soldering: 260℃/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-O .082(2.08) .076(1.93) .147(3.73) .137(3.48) .187(4.75) .167(4.25) .012(.31) .006(.15) .103(2.61) .078(1.99) Mechanical Data .012(.31) .006(.15) Cases: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band Packing: 12mm tape per E1A STD RS-481 Weight: 0.093 gram .056(1.41) .035(0.90) .008(.20) .004(.10) .208(5.28) .200(5.08) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbo HS HS HS Type Number l 2A 2B 2D Maximum Recurrent Peak Reverse Voltage VRRM 50 400 200 Maximum RMS Voltage 35 70 140 VRMS Maximum DC Blocking Voltage 50 100 200 VDC Maximum Average Forward Rectified Current See Fig. 2 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 2.0A Maximum DC Reverse Current @TA =25℃ at Rated DC Blocking Voltage @ TA=100℃ Maximum Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) HS 2F 300 210 300 HS 2G 400 280 400 HS 2J 600 420 600 HS HS Units 2K 2M 800 1000 V 560 700 V 800 1000 V I(AV) 2.0 A IFSM 50 A 1.0 VF 1.3 1.7 5.0 100 IR 50 50 Trr Cj RθJA 75 30 80 -55 to +150 Storage Temperature Range TSTG -55 to +150 Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. Mounted on P.C.B. with 0.4”x0.4” ( 10 x 10 mm ) Copper Pad Areas. Maximum Thermal Resistance (Note 3) Operating Temperature Range TJ - 302 - V uA uA nS pF ℃/W ℃ ℃ RATINGS AND CHARACTERISTIC CURVES (HS2A THRU HS2M) FIG.2- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 10W NONINDUCTIVE trr AVERAGE FORWARD CURRENT. (A) 50W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) 0 PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) -0.25A (+) -1.0A NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms 1cm SET TIME BASE FOR 5/ 10ns/ cm P.C.B.MOUNTED 0.27X0.27"(7.0X7.0mm) COPPER PAD AREAS 2.5 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 150 175 o LEAD TEMPERATURE. ( C) FIG.4- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.3- TYPICAL REVERSE CHARACTERISTICS 10 INSTANTANEOUS FORWARD CURRENT. (A) 1000 10 Tj=25 0C HS 2G 0.1 0.01 HS2J -HS2 1 1 M Tj=100 0C 100 HS2 A-HS 2D INSTANTANEOUS REVERSE CURRENT. ( A) 3.0 0.001 0.1 0 20 40 60 80 100 120 140 0 0.2 0.4 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 60 150 8.3ms Single Half Sine Wave JEDEC Method 40 30 20 1.0 1.2 1.4 125 HS 100 HS 2A- 2J- 75 HS 2G HS 2M 50 25 10 0 0.8 FIG.6- TYPICAL JUNCTION CAPACITANCE 175 JUNCTION CAPACITANCE.(pF) PEAK FORWARD SURGE CURRENT. (A) FIG.5- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 70 50 0.6 FORWARD VOLTAGE. (V) 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz 0 0.1 0.5 1 2 5 10 20 50 100 200 REVERSE VOLTAGE. (V) - 303 - 500 1000