FDN336P Single P-Channel 2.5V Specified PowerTrench® MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • –1.3 A, –20 V. RDS(ON) = 0.20 Ω @ VGS = –4.5 V • Low gate charge (3.6 nC typical) RDS(ON) = 0.27 Ω @ VGS = –2.5 V • These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits and DC/DC conversion. High performance trench technology for extremely low RDS(ON) • TM SuperSOT -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint D D S S G TM SuperSOT -3 G Absolute Maximum Ratings Symbol VDSS TA=25oC unless otherwise noted Parameter Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current PD Maximum Power Dissipation – Continuous Units –20 V ±8 V –1.3 –10 A (Note 1a) 0.5 W (Note 1b) 0.46 (Note 1a) – Pulsed TJ, TSTG Ratings –55 to +150 °C (Note 1a) 250 °C/W (Note 1) 75 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 336 FDN336P 7’’ 8mm 3000 units ©2005 Fairchild Semiconductor Corporation FDN306P Rev D FDN336P January 2005 Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min -20 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V V mV /o C -16 TJ = 55°C -1 µA -10 µA IGSSF Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -8 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC -0.4 RDS(ON) Static Drain-Source On-Resistance VGS = -4.5 V, ID = -1.3 A VGS = -2.5 V, I D = -1.1 A On-State Drain Current VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -4.5 V, ID = -2 A -1.5 V mV /oC 3 TJ =125°C ID(ON) -0.9 0.122 0.2 0.18 0.32 0.19 0.27 -5 Ω A 4 S 330 pF 80 pF 35 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -10 V, VGS = 0 V, f = 1.0 MHz (Note 2) VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 6 Ω VDS = -10 V, ID = - 2 A, VGS = -4.5 V 7 15 ns 12 22 ns 16 26 ns 5 12 ns 3.6 5 nC 0.8 nC 0.7 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 A (Note) -0.7 -0.42 A -1.2 V Note: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 250oC/W when mounted on a 0.02 in2 pad of 2oz Cu. b. 270oC/W when mounted on a 0.001 in2 pad of 2oz Cu. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDN336P Rev.D Typical Electrical Characteristics 2 8 R DS(on), NORMALIZED VGS = -4.5V -3.5V -3.0V 6 -2.5V 4 -2.0V 2 DRAIN-SOURCE ON-RESISTANCE - ID , DRAIN-SOURCE CURRENT (A) 10 0 0 1 2 3 4 1.8 1.4 -3.0V -3.5V 1.2 -4.0V -4.5V 1 0.8 5 VGS = -2.5 V 1.6 0 2 -VDS , DRAIN-SOURCE VOLTAGE (V) 4 6 8 10 - I D , DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Figure 1. On-Region Characteristics. Drain Current and Gate 0.5 I D = -1.3A 1.4 R DS(ON) , ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 VGS = -4.5V 1.2 1 0.8 ID = -0.6A 0.4 0.3 0.2 TA= 125°C 0.1 25°C 0 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 0 2 150 6 8 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. Figure 3. On-Resistance Variation with Temperature. 10 VDS = -5V TJ = -55°C 3 - IS , REVERSE DRAIN CURRENT (A) 4 - I D , DRAIN CURRENT (A) 4 - V GS , GATE TO SOURCE VOLTAGE (V) 25°C 125°C 2 1 0 0.5 1 1.5 2 -VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 VGS = 0V TJ = 125°C 1 25°C -55°C 0.1 0.01 0.001 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN336P Rev.D Typical Electrical Characteristics (continued) 700 I D = -1.3A 400 VDS = -5V 4 CAPACITANCE (pF) -VGS , GATE-SOURCE VOLTAGE (V) 5 -10V -15V 3 2 1 Ciss 200 100 Coss 40 f = 1 MHz VGS = 0 V Crss 0 0 1 2 3 4 0.1 Q g , GATE CHARGE (nC) 2 5 10 20 50 N) S(O RD 3 1m IT LIM 10m 1 100 0.3 0.5 1 3 5 SINGLE PULSE R θJA =270°C/W TA = 25°C 40 ms 1s 10s DC V GS = -4.5V SINGLE PULSE R θJA = 270°C/W T A = 25°C 0.01 0.2 s s POWER (W) 10 30 20 10 10 0 0.0001 30 0.001 0.01 0.1 1 10 100 300 SINGLE PULSE TIME (SEC) -VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. Figure 9. Maximum Safe Operating Area. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -ID , DRAIN CURRENT (A) 1 Figure 8. Capacitance Characteristics. 30 0.03 0.5 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 0.1 0.2 0.5 D = 0.5 0.2 0.1 0.05 0.02 0.01 R θJA (t) = r(t) * RθJA R θJA = 270 °C/W 0.2 0.1 0.05 P(pk) 0.02 0.01 t1 Single Pulse TJ - T 0.002 0.001 0.0001 t2 = P * R JA (t) θ Duty Cycle, D = t1 /t2 0.005 0.001 0.01 0.1 1 10 A 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDN336P Rev.D TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15