TSC2059 General Purpose NPN Transistor BVCEO = 40V Pin assignment: 1. Base 2. Emitter 3. Collector Ic = 50mA VCE (SAT), = 0.2V(typ.) @Ic / Ib = 500mA / 50mA Ordering Information Features High transition frequency Part No. Very low capacitance Packing TSC2059CX Small rbb’-Cc and high gain Package Marking 3kpcs / Reel SOT-23 3E Small NF. Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 18V V Collector-Emitter Voltage VCEO 25V V Emitter-Base Voltage VEBO 3 V Collector Current IC 50 mA Collector Power Dissipation PD 225 mW Operating Junction Temperature TJ +150 o C - 55 to +150 o C Operating Junction and Storage Temperature Range TSTG Electrical Characteristics Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC = 10uA, IE = 0 BVCBO 25 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 BVCEO 18 -- -- V Emitter-Base Breakdown Voltage IE = 10uA, IC = 0 BVEBO 3 -- -- V Collector Cutoff Current VCB = 10V, IE = 0 ICBO -- -- 0.5 uA Emitter Cutoff Current VEB = 2V, IC = 0 IEBO -- -- 0.5 uA Collector-Emitter Saturation Voltage IC / IB = 20mA / 4mA VCE(SAT)1 -- -- 0.5 V DC Current Transfer Ratio VCE = 10V, IC = 10mA hFE 52 -- 270 Transition Frequency VCE = 10V, IC= 10mA, fT -- 1000 -- MHz f=200MHz Output Capacitance VCB = 10V, f=1MHz VCB = 10V, IC= 10mA, Cob -- 1.4 2.0 pF Rbb’-Cc -- 8 15 pF NF -- 5.5 -- dB f=31.8MHz VCE = 12V, IC= 2mA, f=200MHz, Rg=50ohm Note : pulse test: pulse width <=380uS, duty cycle <=2% Classification Of hFE Rank Range TSC2059 K P Q 52 - 120 82 - 180 120 - 270 1-1 2004/06 rev. A SOT-23 Mechanical Drawing A B F A B C D E SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.80 3.04 0.110 0.120 0.30 0.50 0.012 0.020 1.70 2.30 0.067 0.091 0.25 0.65 0.010 0.026 1.2 1.60 0.047 0.063 F G 0.89 0.08 DIM E G D TSC2059 1.30 0.17 0.035 0.003 C 2-2 2004/06 rev. A 0.051 0.006