TSM2320 20V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.0A = 45mΩ RDS (on), Vgs @ 2.5V, Ids @ 2.0A = 65mΩ Features Advanced trench process technology Excellent thermal and electrical capabilities High density cell design for ultra low on-resistance Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. Packing Package TSM2320CX Tape & Reel SOT-23 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20V V Gate-Source Voltage VGS ±10 V ID 3.6 A IDM 14 A Continuous Drain Current Pulsed Drain Current o Maximum Power Dissipation Ta = 25 C Ta = 75 oC Operating Junction Temperature PD W 0.8 +150 o C TJ, TSTG -55 to +150 o C Symbol Limit Unit TL 5 S Rθja 100 TJ Operating Junction and Storage Temperature Range 1.25 Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. TSM2320 1-5 2005/06 rev. A o C/W Electrical Characteristics Ta = 25 oC, unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit V Static Drain-Source Breakdown Voltage VGS = 0V, ID = -250uA BVDSS 20 -- -- Drain-Source On-State Resistance VGS = 4.5V, ID = 3A RDS(ON) -- 32 45 Drain-Source On-State Resistance VGS = 2.5V, ID = 2A RDS(ON) -- 50 65 Gate Threshold Voltage VDS = VGS, ID = -250uA VGS(TH) 0.6 0.9 1.5 V Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V IDSS -- -- 1.0 uA Gate Body Leakage VGS = ±10V, VDS = 0V IGSS -- -- ±100 nA On-State Drain Current VDS = 5V, VGS = 4.5V ID(ON) 10 -- -- A Forward Transconductance VDS = 5V, ID = 3A gfs -- 8 -- S Qg -- 9.1 -- Qgs -- 1.4 -- Qgd -- 3.2 -- td(on) -- 19.6 tr -- 4 td(off) -- 26 tf -- 15.7 Ciss -- 641 -- Coss -- 135 -- Crss -- 101 -- IS -- -- 1.6 A VSD -- 0.81 1.2 V mΩ Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10V, ID =3.5A, VGS = 4.5V VDD = 10V, RL = 10Ω, ID = 1A, VGEN = 4.5V, RG = 6Ω VDS = 15V, VGS = 0V, f = 1.0MHz nC nS pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 1.6A, VGS = 0V Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM2320 2-5 2005/06 rev. A Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM2320 3-5 2005/06 rev. A Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM2320 4-5 2005/06 rev. A SOT-23 Mechanical Drawing A B F A B C D E SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.88 2.91 0.113 0.115 0.39 0.42 0.015 0.017 1.78 2.03 0.070 0.080 0.51 0.61 0.020 0.024 1.59 1.66 0.063 0.065 F G 1.04 0.07 DIM E G D TSM2320 1.08 0.09 0.041 0.003 C 5-5 2005/06 rev. A 0.043 0.004