TSM2N7002ED 50V Dual N-Channel Enhancement Mode MOSFET Pin assignment: 1. Source (2) 6. Drain (2) 2. Gate (2) 5. Gate (1) 3. Drain (1) 4. Source (1) VDS = 50V RDS (on), Vgs @ 10V, Ids @ 250mA = 3Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 4Ω Features Ordering Information Part No. Dual N-channel in package. TSM2N7002EDCU6 Advanced trench process technology High density cell design for ultra low on-resistance Packing Package T & R (3kpcs/Rell) SOT-363 Block Diagram High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No secondary breakdown Compact and low profile SOT-363 package Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 50 V Gate-Source Voltage VGS ± 20 V Continuous Drain Current ID 250 mA Pulsed Drain Current IDM 1.0 A PD 200 mW Maximum Power Dissipation Ta = 25 oC o Ta = 75 C Operating Junction Temperature Operating Junction and Storage Temperature Range 150 TJ +150 o C TJ, TSTG - 55 to +150 o C Symbol Limit Unit TL 5 S Rθja 625 Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=5sec. TSM2N7002ED 1-5 2004/12 rev. B o C/W Electrical Characteristics (Single Channel) Tj = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 10uA BVDSS 50 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 250mA RDS(ON) -- -- 3 Ω Drain-Source On-State Resistance VGS = 5V, ID = 50mA RDS(ON) -- -- 4 Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 1.0 2.0 2.5 V Zero Gate Voltage Drain Current VDS = 50V, VGS = 0V IDSS -- -- 1.0 uA Gate Body Leakage VGS = ± 20V, VDS = 0V IGSS -- -- ± 100 nA On-State Drain Current VDS ≧ 7V, VGS = 10V ID(ON) 500 -- -- mA Forward Transconductance VDS = 7V, ID = 200mA gfs 80 -- -- mS TD(ON) -- 7.5 20 tr -- 6 -- TD(OFF) -- 7.5 20 tf -- 3 -- Dynamic * Turn-On Delay Time VDD = 30V, Turn-On Rise Time ID = 100mA, VGEN = 10V, Turn-Off Delay Time RG = 10Ω Turn-Off Fall Time nS Input Capacitance VDS = 25V, VGS = 0V, Ciss -- 19 50 Output Capacitance f = 1.0MHz Coss -- 10 25 Crss -- 3 5 IS -- -- 115 mA VSD -- 0.76 1.5 V Reverse Transfer Capacitance pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 115mA, VGS = 0V Note : pulse test: pulse width <=300uS, duty cycle <=2% * Guaranteed by design, not subject to production testing. TSM2N7002ED 2-5 2004/12 rev. B Typical Characteristics Curve - Single Channel (Ta = 25 oC unless otherwise noted) Output Characteristic Drain Current (A) Drain Current (A) Transfer Characteristics Drain to source voltage (V) Gate to source voltage (V) Rds(on) Variation with Drain Current Capacitance (pF) Drain to source resistance (Ω) Capacitance Drain current (A) Drain to source voltage (V) Vds breakdown with Temperature Gate –source threshold voltage (V) Drain –source breakdown voltage (V) Vgs(th) with Temperature o Junction temperature ( C) TSM2N7002ED Junction temperature (oC) 3-5 2004/12 rev. B Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) Body Diode Forward Voltage Transconductance (S) Source-drain Current (A) Transconductance Variation Body diode forward voltage (V) Drain to source current (A) Maximum Safe Operating Area Drain Current (A) Gate –source voltage (V) Gate Charge Total gate charge (nC) Drain-source voltage (V) Transient thermal impedance r(t) Normalized Thermal Transient Impedance Curve Square wave pulse duration (S) TSM2N7002ED 4-5 2004/12 rev. B SOT-363 Mechanical Drawing DIM A A1 bp C D E e e1 He Lp Q W Θ TSM2N7002ED 5-5 SOT-363 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 0.80 1.10 0.031 0.043 -0.10 -0.004 0.10 0.30 0.004 0.012 0.10 0.25 0.004 0.010 1.80 2.20 0.071 0.087 1.15 1.35 0.045 0.053 1.30 (typ) 0.052 (typ) 0.65 (typ) 0.026(typ) 2.00 2.20 0.079 0.087 0.10 0.3 0.004 0.012 0.20 (typ) 0.008 (typ) 0.20 (typ) 0.008 (typ) 10o (typ) 10o (typ) 2004/12 rev. B