TSM3460 20V N-Channel MOSFET w/ESD Protected Pin assignment: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6A =22mΩ (typ.) RDS (on), Vgs @ 2.5V, Ids @ 5A =30mΩ (typ.) Features Block Diagram Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application Ordering Information Part No. TSM3460CX6 Packing Tape & Reel Package SOT-26 3,000/per reel Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit VDS 20V V VGS ± 12 V Ta = 25 C ID 6 A Ta = 70 oC ID 5 A Pulsed Drain Current, VGS @4.5V IDM 30 A Diode Forward Current Is 1.5 A PD 1.3 W Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Maximum Power Dissipation o Ta = 25 oC Ta = 70 oC Operating Junction and Storage Temperature Range 0.96 TJ, TSTG - 55 to +150 Symbol Limit o C Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=300uS, Duty < 2%. TSM3460 1-1 Unit Rθjf 35 o Rθja 120 o 2003/12 rev. F C/W C/W Electrical Characteristics Tj = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 20 -- -- V Drain-Source On-State Resistance VGS = 4.5V, ID = 6A 25 oC RDS(ON) -- 22 30 mΩ VGS = 4.5V, ID = 6A 60 oC RDS(ON) -- 40 50 Drain-Source On-State Resistance VGS = 2.5V, ID = 5A RDS(ON) -- 30 40 mΩ Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 0.5 0.85 -- V Zero Gate Voltage Drain Current VDS = 12V, VGS = 0V IDSS -- -- 1.0 uA -- -- 25 o VDS = 12V, VGS = 0V, Tj = 60 C Gate Body Leakage VGS = ± 12V, VDS = 0V IGSS -- -- ± 100 nA On-State Drain Current VGS = 4.5V, VDS >= 5V ID(ON) 30 -- -- A Forward Transconductance VDS = 10V, ID = 6A gfs -- 30 -- S Total Gate Charge VDS = 10V, ID = 6A, Qg -- 15.5 30 Gate-Source Charge VGS = 4.5V Qgs -- 2 -- Qgd -- 3.5 -- Dynamic * Gate-Drain Charge Turn-On Delay Time VDD = 10V, RL = 10Ω, td(on) -- 75 100 Turn-On Rise Time ID = 1A, VGEN = 4.5V, tr -- 125 150 Turn-Off Delay Time RG = 6Ω td(off) -- 600 720 tf -- 300 360 Turn-Off Fall Time nC nS Input Capacitance VDS = 10V, VGS = 0V, Ciss -- 1336 -- Output Capacitance f = 1.0MHz Coss -- 220 -- Crss -- 130 -- IS -- -- 1.5 A VSD -- 0.6 1.2 V Reverse Transfer Capacitance pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 1.5A, VGS = 0V Note : * for design only, not subject to production tested. pulse test: pulse width <=300uS, duty cycle <=2% TSM3460 2-2 2003/12 rev. F Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) TSM3460 3-3 2003/12 rev. F Electrical Characteristics Curve (continued) TSM3460 4-4 2003/12 rev. F SOT-26 Mechanical Drawing DIM A B C D E F H L TSM3460 5-5 SOT-26 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.70 3.00 0.106 0.118 0.25 0.50 0.010 0.020 1.90(typ) 0.075(typ) 0.95(typ) 0.037(typ) 1.50 1.70 0.059 0.067 1.05 1.35 0.041 0.053 2.60 3.00 0.102 0.118 0.60(typ) 0.024(typ) 2003/12 rev. F