UTC 2N2955 SILICON PNP TRANSISTOR SILICON PNP TRANSISTORS The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETERS SYMBOL VALUE UNITS VCBO VCEO VEBO VCEV Ic ICM IB IBM Ptot TSTG Tj 100 60 7 70 15 15 7 15 115 -65 to 200 200 V V V V A A A A W °C °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Peak Current(1) Base Current Base Peak Current(1) Total Dissipation at Ta=25°C Storage Temperature Max. Operating Junction Temperature ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current ON CHARACTERISTICS DC Current Gain(note) Collector-Emitter Saturation Voltage UTC SYMBOL TEST CONDITIONS MIN VCEO(sus) Ic=200mA, IB=0V 60 VCER(sus) ICEO ICEX Ic=0.2 A, RBE=100 Ohms VCE=30V,IB=0 VCE=100V,VBE(off)=1.5V. VCE=100V,VBE(off)=1.5V, Ta=150°C VBE=7V,IC=0 70 Ic=4A,VCE=4V, Ic=10A,VCE=4V Ic=4A,IB=400mA Ic=10A,IB=3.3A 20 5 IEBO hFE VCE(sat) UNISONIC TECHNOLOGIES TYP MAX UNIT V 0.7 1.0 5.0 5.0 V mA mA mA 70 1.1 3.0 CO. LTD V 1 QW-R205-004,A UTC 2N2955 SILICON PNP TRANSISTOR PARAMETER SYMBOL TEST CONDITIONS MIN Base-Emitter On Voltage VBE(on) Ic=4A,VCE=4V SECOND BREAKDOWN Second Breakdown Collector with Is/b VCE=60V,T=1.0s, Non-repetitive 2.87 Base Forward Biased DYNAMIC CHARACTERISTICS Current Gain-Bandwidth Product fT Ic=0.5A,VCE=10V,f=1MHz 2.5 Small-Signal Current Gain hFE Ic=1A,VCE=4V,f=1kHz 15 Small-Signal Current Gain fHFE Ic=1A,VCE=4V 10 Cut-off Frequency F=1.0kHz Note(1):Pulse Test: Puls Width<=300µs, Duty Cycle<=2% UTC UNISONIC TECHNOLOGIES TYP MAX UNIT 1.5 V A MHz 120 kHz CO. LTD 2 QW-R205-004,A